公开(公告)号：US4617870A

公开(公告)日：1986-10-21

申请号：US726094

申请日：1985-04-23

申请人： Masahiro Hirano ,  Toshio Miyauchi

发明人： Masahiro Hirano ,  Toshio Miyauchi

IPC分类号： F24H9/00 ,  F22B21/02 ,  F27D99/00 ,  F27D23/00

CPC分类号： F27D99/0035

摘要： A method of accelerating radiative transfer is characterized in that a radiation acceleration plate is interposed between heat absorption pipe trains or planes disposed opposite to each other and heated by radiation of gases having a high temperature in a radiation portion of a furnace so that the pipes or planes are heated by radiation of the acceleration plate and radiation of the gases.

摘要翻译： 一种加速辐射传递的方法的特征在于，辐射加速板插入在彼此相对设置的吸热管列或相互平行的平面之间，并通过在炉的辐射部分中具有高温的气体的辐射进行加热，使得管或 平面被加速板的辐射和气体的辐射加热。

公开(公告)号：US10032931B2

公开(公告)日：2018-07-24

申请号：US13243244

申请日：2011-09-23

申请人： Hideo Hosono ,  Masahiro Hirano ,  Hiromichi Ota ,  Toshio Kamiya ,  Kenji Nomura

发明人： Hideo Hosono ,  Masahiro Hirano ,  Hiromichi Ota ,  Toshio Kamiya ,  Kenji Nomura

IPC分类号： H01L29/26 ,  H01L29/786 ,  C23C14/00 ,  C23C14/08 ,  C23C14/28 ,  C23C14/34 ,  H01L21/02 ,  H01L27/12

摘要： A switching element of LCDs or organic EL displays which uses a thin film transistor device, includes: a drain electrode, a source electrode, a channel layer contacting the drain electrode and the source electrode, wherein the channel layer comprises indium-gallium-zinc oxide having a transparent, amorphous state of a composition equivalent to InGaO3(ZnO)m (wherein m is a natural number less than 6) in a crystallized state, and the channel layer has a semi-insulating property represented by an electron mobility of more than 1 cm2/(V·sec) and an electron carrier concentration is less than 1018/cm3, a gate electrode, and a gate insulating film positioned between the gate electrode and the channel layer.

公开(公告)号：US20130341963A1

公开(公告)日：2013-12-26

申请号：US14003707

申请日：2012-03-06

申请人： Masahiro Hirano ,  Ai Matsumoto

发明人： Masahiro Hirano ,  Ai Matsumoto

IPC分类号： B60L3/00

CPC分类号： B60L3/0007 ,  B60K1/00 ,  B60L11/1812 ,  B60L15/007 ,  B62D21/15 ,  Y02T10/645 ,  Y02T10/7005 ,  Y02T10/7072 ,  Y02T10/7088 ,  Y02T90/127 ,  Y02T90/14

摘要： A protective device for an onboard electronic equipment includes a vehicle body reinforcing member that is arranged around the electronic equipment, and of which each end is fastened to an onboard fixed member, and in which force required to unfasten one end is less than force required to unfasten the other end, and a protective member that is mounted to a facing surface of the electronic equipment that faces the vehicle body reinforcing member such that, when the electronic equipment moves to the vehicle body reinforcing member side due to receiving force from a side of a vehicle body, the protective member will contact the vehicle body reinforcing member before the electronic equipment does.

摘要翻译： 一种用于车载电子设备的保护装置包括车身加强件，该车身加强件布置在电子设备周围，并且每个端部固定在车载固定部件上，并且其中解除一端所需的力小于所需的力 解除另一端，以及保护构件，其被安装到电子设备的面对车体加强构件的面对表面，使得当电子设备由于从侧面的接收力而移动到车身加强构件侧时 车体，保护构件将在电子设备之前接触车体加强构件。

公开(公告)号：US20110045985A1

公开(公告)日：2011-02-24

申请号：US12934931

申请日：2009-02-20

申请人： Hideo Hosono ,  Hiroshi Yanagi ,  Toshio Kamiya ,  Satoru Matsuishi ,  Sungwng Kim ,  Seok Gyu Yoon ,  Hidenori Hiramatsu ,  Masahiro Hirano ,  Yoichi Kamihara ,  Takatoshi Nomura

发明人： Hideo Hosono ,  Hiroshi Yanagi ,  Toshio Kamiya ,  Satoru Matsuishi ,  Sungwng Kim ,  Seok Gyu Yoon ,  Hidenori Hiramatsu ,  Masahiro Hirano ,  Yoichi Kamihara ,  Takatoshi Nomura

IPC分类号： C22C30/00 ,  H01L39/00 ,  H01L39/24 ,  C22C30/02

CPC分类号： C01G55/002 ,  C01B25/088 ,  C01G49/009 ,  C01G53/006 ,  C01P2002/22 ,  C01P2002/34 ,  C01P2002/52 ,  C01P2002/72 ,  C01P2002/77 ,  C01P2006/40 ,  C01P2006/42 ,  H01L39/125

摘要： A superconductor which comprises a new compound composition substituting for perovskite copper oxides. The superconductor is characterized by comprising a compound which is represented by the chemical formula A(TM)2Pn2 [wherein A is at least one member selected from the elements in Group 1, the elements in Group 2, or the elements in Group 3 (Sc, Y, and the rare-earth metal elements); TM is at least one member selected from the transition metal elements Fe, Ru, Os, Ni, Pd, or Pt; and Pn is at least one member selected from the elements in Group 15 (pnicogen elements)] and which has an infinite-layer crystal structure comprising (TM)Pn layers alternating with metal layers of the element (A).

摘要翻译： 一种超导体，其包含取代钙钛矿铜氧化物的新化合物组合物。 超导体的特征在于包含由化学式A（TM）2Pn2表示的化合物[其中A是选自组1中的元素，组2中的元素或组3中的元素（Sc ，Y和稀土金属元素）; TM是选自过渡金属元素Fe，Ru，Os，Ni，Pd或Pt中的至少一种; 并且Pn是选自第15族元素（pnicogen元素）中的至少一种元素]，并且其具有包含与元素（A）的金属层交替的（TM）Pn层的无限层晶体结构。

公开(公告)号：US20110032289A1

公开(公告)日：2011-02-10

申请号：US12851492

申请日：2010-08-05

申请人： Masahiro Hirano

发明人： Masahiro Hirano

IPC分类号： B41J2/195

CPC分类号： B41F33/0045

摘要： An ink supply amount adjustment method for a printing press includes steps of measuring the density value of each density measurement patch printed in a range corresponding to each ink fountain key on a printed printing sheet, obtaining the opening ratio of each ink fountain key in preliminary ink feeding, based on the difference between the measured density value of a patch and a preset reference density value, and the current opening ratio of each ink fountain key or image data in the range corresponding to each ink fountain key, and performing the ink feed operation of an ink ductor roller while printing is suspended, after setting the opening ratio of each ink fountain key to the obtained opening ratio in preliminary ink feeding. An ink supply amount adjustment apparatus for a printing press is also disclosed.

摘要翻译： 用于印刷机的供墨量调节方法包括以下步骤：测量印刷在与印刷的印刷纸上的每个墨斗键相对应的范围内的每个浓度测量贴片的浓度值，从而获得初步墨水中每个墨斗键的开口率 基于补片的测量密度值与预设参考密度值之间的差异，以及在与每个墨斗键相对应的范围内的每个墨斗键或图像数据的当前开启比，并执行墨水供给操作 在将墨水喷泉键的开口率设定为预备供墨中获得的开口率时，打印暂停时的墨水导向辊。 还公开了一种用于印刷机的供墨量调节装置。

公开(公告)号：US07722846B2

公开(公告)日：2010-05-25

申请号：US11948053

申请日：2007-11-30

申请人： Hideo Hosono ,  Katsuro Hayashi ,  Sung Wng Kim ,  Masahiro Hirano ,  Satoru Narushima ,  Setsuro Ito

发明人： Hideo Hosono ,  Katsuro Hayashi ,  Sung Wng Kim ,  Masahiro Hirano ,  Satoru Narushima ,  Setsuro Ito

IPC分类号： C01F7/16

CPC分类号： C01F7/164 ,  C01F7/002 ,  C01F7/166 ,  C01P2002/50 ,  C01P2002/84 ,  C01P2006/40 ,  C01P2006/60 ,  C03C4/14 ,  C03C10/0036 ,  C04B35/44 ,  C04B35/6262 ,  C04B35/62675 ,  C04B35/6268 ,  C04B2235/3201 ,  C04B2235/3203 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3229 ,  C04B2235/3232 ,  C04B2235/3239 ,  C04B2235/3241 ,  C04B2235/3262 ,  C04B2235/3272 ,  C04B2235/3275 ,  C04B2235/3279 ,  C04B2235/3281 ,  C04B2235/3287 ,  C04B2235/3409 ,  C04B2235/3418 ,  C04B2235/44 ,  C04B2235/444 ,  C04B2235/445 ,  C04B2235/446 ,  C04B2235/652 ,  C30B29/22 ,  C30B33/00 ,  H01B1/08

摘要： Provided is a method for preparing an electroconductive mayenite type compound with good properties readily and stably at low cost.A production method of an electroconductive mayenite type compound comprising a step of subjecting a precursor to heat treatment, is a method for preparing an electroconductive mayenite type compound, comprising a step of subjecting a precursor to heat treatment; wherein the precursor is a vitreous or crystalline material, which contains Ca and Al, in which a molar ratio of (CaO:Al2O3) is from (12.6:6.4) to (11.7:7.3) as calculated as oxides, and in which a total amount of CaO and Al2O3 is at least 50 mol %, and wherein the heat treatment is heat treatment comprising holding the precursor at a heat treatment temperature T of from 600 to 1415° C. and in an inert gas or vacuum atmosphere with an oxygen partial pressure PO2 in a range ofPO2≦105×exp [{−7.9×l04/(T+273)}+14.4] in the unit of Pa.

摘要翻译： 提供了一种以低成本容易且稳定地制备具有良好性能的导电性钙铝石型化合物的方法。 包括对前体进行热处理的步骤的导电性钙铝石型化合物的制造方法是制备导电性钙铝石型化合物的方法，包括使前体进行热处理的工序; 其中所述前体是含有Ca和Al的玻璃质或结晶材料，其中（CaO：Al 2 O 3）的摩尔比为（12.6:4.4）至（11.7:7.3），其计算为氧化物，其中总计 CaO和Al 2 O 3的量为至少50摩尔％，其中热处理为热处理，包括将前体保持在600-1415℃的热处理温度T下，在惰性气体或具有氧部分的惰性气体或真空气氛中 在PO2＆NlE的范围内的压力PO2为105×exp [{-7.9×104 /（T + 273）} + 14.4]。

公开(公告)号：US07696386B2

公开(公告)日：2010-04-13

申请号：US12441780

申请日：2007-09-28

申请人： Hideo Hosono ,  Haritha Buchammagari ,  Yoshitake Toda ,  Masahiro Hirano ,  Kohtaro Osakada ,  Daisuke Takeuchi

发明人： Hideo Hosono ,  Haritha Buchammagari ,  Yoshitake Toda ,  Masahiro Hirano ,  Kohtaro Osakada ,  Daisuke Takeuchi

IPC分类号： C07C45/00 ,  C07C31/18 ,  C07C29/16

CPC分类号： C07C45/72 ,  C07B41/02 ,  C07C29/143 ,  C07C29/38 ,  C07C41/26 ,  C07C41/30 ,  C07C45/73 ,  C07C46/00 ,  C07C253/30 ,  C07C31/22 ,  C07C31/42 ,  C07C31/20 ,  C07C49/83 ,  C07C49/835 ,  C07C50/20 ,  C07C255/53 ,  C07C43/23

摘要： The invention is a process of using, as a reducing agent, a 12CaO.7Al2O3 electride containing electrons in a number of 1019 or more and 2.3×1021 cm−3 or less in its cages to subject a carbonyl compound to reductive coupling in a solvent, thereby synthesizing a diol or polydiol. The invention is also a process of reducing a ketone compound in a solvent, thereby synthesizing a secondary alcohol or diketone compound. According to the process of the invention, it is possible to synthesize a diol or polydiol, or a secondary alcohol or diketone compound through simple operations in a short period without using an expensive and harmful metal hydride or metal salt nor limiting the atmosphere for the synthesis to an inert gas atmosphere as in conventional processes.

摘要翻译： 本发明是在其笼中使用含有1019以上且2.3×1021cm-3以下的电子的12CaO·7H 2 O 3电极作为还原剂的方法，以使羰基化合物在溶剂中还原偶联 ，从而合成二醇或聚二醇。 本发明也是在溶剂中还原酮化合物的方法，从而合成仲醇或二酮化合物。 根据本发明的方法，可以在短时间内通过简单的操作合成二醇或多元醇或仲醇或二酮化合物，而不使用昂贵且有害的金属氢化物或金属盐，也不限制合成气氛 到惰性气体气氛中，如常规方法。

公开(公告)号：US07521100B2

公开(公告)日：2009-04-21

申请号：US10552183

申请日：2004-04-06

申请人： Masahiro Imaizumi ,  Toyofumi Asano ,  Naoyuki Ochi ,  Masahiro Hirano ,  Sumio Ichimura ,  Masaru Kudo ,  Katsuhiko Oshimi ,  Masataka Nakanishi ,  Yasumasa Akatsuka ,  Eiichi Nishihara ,  Masayuki Itai

发明人： Masahiro Imaizumi ,  Toyofumi Asano ,  Naoyuki Ochi ,  Masahiro Hirano ,  Sumio Ichimura ,  Masaru Kudo ,  Katsuhiko Oshimi ,  Masataka Nakanishi ,  Yasumasa Akatsuka ,  Eiichi Nishihara ,  Masayuki Itai

IPC分类号： C09K3/10 ,  G02F1/1339 ,  C08L63/02 ,  C08G59/04

CPC分类号： C08L63/00 ,  C08G59/04 ,  G02F1/1339 ,  Y10T428/10 ,  Y10T428/1059 ,  Y10T428/1073

摘要： The present invention relates to a sealant for liquid crystals having extremely low contamination nature to a liquid crystal, excellent coatability and bondability to a substrate, long service life and pot life and high adhesive strength. A sealant for liquid crystals of the present invention is characterized by comprising (a) an epoxy resin represented by general formula (1): (wherein a represents an integer of 2 to 4; n represents 0 to 3 (average value); R represents a divalent hydrocarbon group of 2 to 6 carbon atoms; A represents a polyvalent aromatic group; and G represents a glycidyl group, provided that when n is 0, (a) an epoxy resin represented by general formula (1) is a bisphenol S-type.), (b) a thermo-curing agent, (c) and a filler having average particle diameter of not larger than 3 μm.

摘要翻译： 本发明涉及一种液晶污染性极差的液晶密封剂，对基材的涂布性和粘接性，使用寿命长，使用寿命长，粘结强度高的特点。 本发明的液晶密封剂的特征在于：（a）由通式（1）表示的环氧树脂：其中a表示2〜4的整数，n表示0〜3（平均值），R表示 如果n为0，（a）由通式（1）表示的环氧树脂为双酚S-基，则表示2〜6个碳原子的二价烃基; A表示多价芳基; G表示缩水甘油基， 型），（b）热固化剂，（c）和平均粒径不大于3μm的填料。

公开(公告)号：US20080305707A1

公开(公告)日：2008-12-11

申请号：US11665111

申请日：2005-10-12

申请人： Masahiro Imaizumi ,  Yasumasa Akatuka ,  Naoyuki Ochi ,  Eiichi Nishihara ,  Masaru Kudou ,  Toyohumi Asano ,  Naoki Toneda ,  Masahiro Hirano

发明人： Masahiro Imaizumi ,  Yasumasa Akatuka ,  Naoyuki Ochi ,  Eiichi Nishihara ,  Masaru Kudou ,  Toyohumi Asano ,  Naoki Toneda ,  Masahiro Hirano

IPC分类号： G02F1/13 ,  B29C65/00 ,  C08F2/50

CPC分类号： C08F290/06 ,  C08G18/3215 ,  C08G18/8116 ,  C08L9/00 ,  C08L63/10 ,  C08L2205/03 ,  C09D163/00 ,  C09D163/10 ,  G02F1/1339 ,  Y10T156/10 ,  Y10T428/1059 ,  Y10T428/1077 ,  Y10T428/1082 ,  C08L2666/02

摘要： [Problems] To provide a radiation curable resin having an extremely low possibility of contaminating liquid crystals, and a liquid crystal sealing material using such a photopolymerization initiator. [Means for Solving Problems] A liquid crystal sealing material characterized by comprising (a) a radiation curable resin represented by the general formula (1) below, (b) a photopolymerization initiator and (c) a filler having an average particle diameter of not more than 3 μm. (In the formula (1), R1 represents a hydrogen atom or a methyl group; R2 may be the same or different and represents a hydrogen atom, a halogen atom, a hydroxyl group, a monovalent linear, branched or cyclic alkyl group having 1-10 carbon atoms or an alkoxy group having 1-10 carbon atoms; m represents an integer of 1-4; R3 represents a hydrogen atom or a methyl group; R4 represents a linear, branched or cyclic alkyl group having 1-10 carbon atoms; 1 represents a range of positive numbers from 1 to 5; and the repeating unit number n represents a range of positive numbers from 0 to 20.)

摘要翻译： [问题]提供一种具有极低的污染液晶的可辐射固化树脂，以及使用这种光聚合引发剂的液晶密封材料。 [解决问题的方法]一种液晶密封材料，其特征在于包括（a）由下述通式（1）表示的可辐射固化树脂，（b）光聚合引发剂和（c）平均粒径不为 超过3个妈妈。 （式（1）中，R 1表示氢原子或甲基，R 2可以相同或不同，表示氢原子，卤素原子，羟基，1价的直链状，支链状或环状的1个 -10个碳原子或具有1-10个碳原子的烷氧基; m表示1-4的整数; R 3表示氢原子或甲基; R 4表示具有1-10个碳原子的直链，支链或环状烷基 1表示1〜5的正数的范围，重复单元数n表示0〜20的正数的范围）

公开(公告)号：US07323356B2

公开(公告)日：2008-01-29

申请号：US10505219

申请日：2003-02-19

申请人： Hideo Hosono ,  Masahiro Hirano ,  Hiromichi Ota ,  Masahiro Orita ,  Hidenori Hiramatsu ,  Kazushige Ueda

发明人： Hideo Hosono ,  Masahiro Hirano ,  Hiromichi Ota ,  Masahiro Orita ,  Hidenori Hiramatsu ,  Kazushige Ueda

IPC分类号： H01L21/06 ,  C30B1/02 ,  C04B35/50

CPC分类号： C30B33/00 ,  C30B1/02 ,  C30B23/02 ,  C30B29/22 ,  H01L21/0242 ,  H01L21/02439 ,  H01L21/02483 ,  H01L21/02485 ,  H01L21/02491 ,  H01L21/02565 ,  H01L21/02568 ,  H01L21/02631 ,  H01L29/24 ,  H01L33/26

摘要： Disclosed is a method of producing an LnCuOX single-crystal thin film (wherein Ln is at least one selected from the group consisting of lanthanide elements and yttrium, and X is at least one selected from the group consisting of S, Se and Te), which comprises the steps of growing a base thin film on a single-crystal substrate, depositing an amorphous or polycrystalline LnCuOX thin film on the base thin film to form a laminated film, and then annealing the laminated film at a high temperature of 500° C. or more. While a conventional LnCuOX film produced by growing an amorphous film through a sputtering process under appropriate conditions and then annealing the film at a high temperature was unexceptionally a polycrystalline substance incapable of achieving high emission efficiency and electron mobility required for a material of light-emitting devices or electronic devices, the method of the present invention can grow a thin film with excellent crystallinity suitable as a single crystal to an building black of light-emitting diodes, semiconductor leasers, filed-effect transistors, or a hetero-bipolar transistors.

摘要翻译： 公开了一种LnCuOX单晶薄膜的制造方法（其中Ln为选自镧系元素和钇中的至少一种，X为选自S，Se和Te中的至少一种）， 其包括以下步骤：在单晶衬底上生长基底薄膜，在基底薄膜上沉积非晶或多晶LnCuOX薄膜以形成层压膜，然后在500℃的高温下对层压膜进行退火 。 或者更多。 虽然通过在适当条件下通过溅射工艺生长非晶膜然后在高温下退火膜而制备的常规LnCuOX膜通常是不能实现发光器件材料所需的高发射效率和电子迁移率的多晶物质 或电子器件，本发明的方法可以将适合作为单晶的优异结晶度的薄膜生长到发光二极管，半导体雷达，场效应晶体管或异质双极晶体管的建筑物黑色。