公开(公告)号：US20120129335A1

公开(公告)日：2012-05-24

申请号：US13193569

申请日：2011-07-28

申请人： Masamitsu IKUMO ,  Hiroyuki Yoda ,  Yoshito Akutagawa

发明人： Masamitsu IKUMO ,  Hiroyuki Yoda ,  Yoshito Akutagawa

IPC分类号： H01L21/283

CPC分类号： H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02313 ,  H01L2224/02331 ,  H01L2224/02351 ,  H01L2224/0239 ,  H01L2224/03462 ,  H01L2224/0361 ,  H01L2224/03831 ,  H01L2224/03901 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05572 ,  H01L2224/05655 ,  H01L2224/11334 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13006 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/13091 ,  H01L2924/01022 ,  H01L2924/01074 ,  H01L2924/01047 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device including the following steps: forming an insulator layer over a first conductor over a semiconductor substrate; forming a barrier layer to coat the surface of the insulator layer; forming a second conductor over the barrier layer; melting the second conductor in an atmosphere containing either hydrogen or carboxylic acid in a condition that the surface of the insulator layer over the first conductor is coated with the barrier layer; and removing the barrier layer partially from the surface of the insulator layer with the second conductor as a mask.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：在半导体衬底上的第一导体上形成绝缘体层; 形成阻挡层以涂覆绝缘体层的表面; 在阻挡层上形成第二导体; 在第一导体上的绝缘体层的表面被阻挡层涂覆的条件下，在含有氢或羧酸的气氛中熔化第二导体; 并且用第二导体作为掩模将绝缘层的表面部分地去除阻挡层。

公开(公告)号：US20070138635A1

公开(公告)日：2007-06-21

申请号：US11374134

申请日：2006-03-14

申请人： Masamitsu Ikumo ,  Hiroyuki Yoda ,  Eiji Watanabe

发明人： Masamitsu Ikumo ,  Hiroyuki Yoda ,  Eiji Watanabe

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： H01L24/12 ,  H01L23/3171 ,  H01L24/11 ,  H01L24/16 ,  H01L2224/0381 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/1132 ,  H01L2224/114 ,  H01L2224/1147 ,  H01L2224/116 ,  H01L2224/131 ,  H01L2224/73253 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12044 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2224/13099 ,  H01L2924/00014

摘要： A semiconductor device includes a plurality of electrode layers provided at designated positions of a semiconductor substrate, an organic insulation film formed on the semiconductor substrate by selectively exposing designated areas of the electrode layers, and projection electrodes for outside connection, the projection electrodes being formed on the designated areas of the electrode layers. Thickness of the organic insulation film situated in the vicinity of the periphery of the projection electrodes is greater than thickness of the organic insulation film situated between the projection electrodes.

摘要翻译： 半导体器件包括设置在半导体衬底的指定位置处的多个电极层，通过选择性地暴露电极层的指定区域和用于外部连接的突出电极而形成在半导体衬底上的有机绝缘膜，所述突起电极形成在 电极层的指定区域。 位于突出电极周围附近的有机绝缘膜的厚度大于位于突出电极之间的有机绝缘膜的厚度。

公开(公告)号：US07064436B2

公开(公告)日：2006-06-20

申请号：US10995081

申请日：2004-11-23

申请人： Masahiko Ishiguri ,  Hirohisa Matsuki ,  Hiroyuki Yoda ,  Tadahiro Okamoto ,  Masamitsu Ikumo ,  Shuichi Chiba

发明人： Masahiko Ishiguri ,  Hirohisa Matsuki ,  Hiroyuki Yoda ,  Tadahiro Okamoto ,  Masamitsu Ikumo ,  Shuichi Chiba

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/1147 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/0105 ,  H01L2224/13099

摘要： A semiconductor device includes a semiconductor substrate and an array of protruding electrodes arranged at a pitch X1. Each of the protruding electrodes has a height X3 and is formed on a barrier metal base of diameter X2 coupled to an electrode arranged on the semiconductor substrate so as to satisfy the relations (X1/2)≦X2≦(3*X1/4) and (X1/2)≦X3≦(3*X1/4).

摘要翻译： 半导体器件包括半导体衬底和以间距X 1布置的突出电极阵列。 每个突出电极具有高度X 3，并且形成在与布置在半导体衬底上的电极耦合的直径为X 2的阻挡金属基底上，以满足关系（X 1/2）<= X 2 <=（ 3 * X 1/4）和（X 1/2）<= X 3 <=（3 * X 1/4）。

公开(公告)号：US08093148B2

公开(公告)日：2012-01-10

申请号：US12570459

申请日：2009-09-30

申请人： Yutaka Makino ,  Masamitsu Ikumo ,  Hiroyuki Yoda

发明人： Yutaka Makino ,  Masamitsu Ikumo ,  Hiroyuki Yoda

IPC分类号： H01L21/44

CPC分类号： H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/03902 ,  H01L2224/03912 ,  H01L2224/03914 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/11009 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/1181 ,  H01L2224/11849 ,  H01L2224/13006 ,  H01L2224/13076 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13155 ,  H01L2224/13566 ,  H01L2224/13687 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/00014 ,  H01L2924/0105 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00 ,  H01L2224/05552

摘要： A method for manufacturing semiconductor device which includes forming a first metal film over an electrode pad disposed on a substrate, forming a second metal film on the first metal film, forming a first oxide film on a surface of the first metal film and a second oxide film on a surface of the second metal film by oxidizing the surfaces of the first metal film and the second metal film, removing the first oxide film, and melting the second metal film after removing the first oxide film.

摘要翻译： 一种半导体器件的制造方法，其特征在于，在设置在基板上的电极焊盘上形成第一金属膜，在所述第一金属膜上形成第二金属膜，在所述第一金属膜的表面上形成第一氧化膜， 通过氧化第一金属膜和第二金属膜的表面，去除第一氧化物膜，以及在除去第一氧化物膜之后熔化第二金属膜，在第二金属膜的表面上形成膜。

公开(公告)号：US07417326B2

公开(公告)日：2008-08-26

申请号：US11374134

申请日：2006-03-14

申请人： Masamitsu Ikumo ,  Hiroyuki Yoda ,  Eiji Watanabe

发明人： Masamitsu Ikumo ,  Hiroyuki Yoda ,  Eiji Watanabe

IPC分类号： H01L23/485

CPC分类号： H01L24/12 ,  H01L23/3171 ,  H01L24/11 ,  H01L24/16 ,  H01L2224/0381 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/1132 ,  H01L2224/114 ,  H01L2224/1147 ,  H01L2224/116 ,  H01L2224/131 ,  H01L2224/73253 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12044 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2224/13099 ,  H01L2924/00014

摘要： A semiconductor device includes a plurality of electrode layers provided at designated positions of a semiconductor substrate, an organic insulation film formed on the semiconductor substrate by selectively exposing designated areas of the electrode layers, and projection electrodes for outside connection, the projection electrodes being formed on the designated areas of the electrode layers. Thickness of the organic insulation film situated in the vicinity of the periphery of the projection electrodes is greater than thickness of the organic insulation film situated between the projection electrodes.

公开(公告)号：US20060258045A1

公开(公告)日：2006-11-16

申请号：US11412127

申请日：2006-04-27

申请人： Masahiko Ishiguri ,  Hirohisa Matsuki ,  Hiroyuki Yoda ,  Tadahiro Okamoto ,  Masamitsu Ikumo ,  Shuichi Chiba

发明人： Masahiko Ishiguri ,  Hirohisa Matsuki ,  Hiroyuki Yoda ,  Tadahiro Okamoto ,  Masamitsu Ikumo ,  Shuichi Chiba

IPC分类号： H01L21/00 ,  H01L23/02

CPC分类号： H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/1147 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/0105 ,  H01L2224/13099

摘要： A semiconductor device includes a semiconductor substrate and an array of protruding electrodes arranged at a pitch X1. Each of the protruding electrodes has a height X3 and is formed on a barrier metal base of diameter X2 coupled to an electrode arranged on the semiconductor substrate so as to satisfy the relations (X½)≦X2≦(3*X¼) and (X½)≦X3≦(3*X¼).

摘要翻译： 半导体器件包括半导体衬底和以间距X1布置的突出电极阵列。 每个突出电极具有高度X3，并且形成在直径为X2的阻挡金属基底上，耦合到布置在半导体衬底上的电极，以满足关系式（X 1/2）<= X2 <=（3 *X¼）和（ X½）<= X3 <=（3 *X¼）。

公开(公告)号：US20050140004A1

公开(公告)日：2005-06-30

申请号：US10995081

申请日：2004-11-23

申请人： Masahiko Ishiguri ,  Hirohisa Matsuki ,  Hiroyuki Yoda ,  Tadahiro Okamoto ,  Masamitsu Ikumo ,  Shuichi Chiba

发明人： Masahiko Ishiguri ,  Hirohisa Matsuki ,  Hiroyuki Yoda ,  Tadahiro Okamoto ,  Masamitsu Ikumo ,  Shuichi Chiba

IPC分类号： H01L21/60 ,  H01L21/28 ,  H01L21/768 ,  H01L23/02 ,  H01L23/48 ,  H01L23/485 ,  H01L23/52

CPC分类号： H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/1147 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/0105 ,  H01L2224/13099

摘要： A semiconductor device includes a semiconductor substrate and an array of protruding electrodes arranged at a pitch X1. Each of the protruding electrodes has a height X3 and is formed on a barrier metal base of diameter X2 coupled to an electrode arranged on the semiconductor substrate so as to satisfy the relations (X1/2)≦X2≦(3*X1/4) and (X1/2)≦X3≦(3*X1/4).

摘要翻译： 半导体器件包括半导体衬底和以间距X 1布置的突出电极阵列。 每个突出电极具有高度X 3，并且形成在与布置在半导体衬底上的电极耦合的直径为X 2的阻挡金属基底上，以满足关系（X 1/2）<= X 2 <=（ 3 * X 1/4）和（X 1/2）<= X 3 <=（3 * X 1/4）。

公开(公告)号：US08420522B2

公开(公告)日：2013-04-16

申请号：US12213819

申请日：2008-06-25

申请人： Masamitsu Ikumo ,  Hiroyuki Yoda ,  Eiji Watanabe

发明人： Masamitsu Ikumo ,  Hiroyuki Yoda ,  Eiji Watanabe

IPC分类号： H01L21/44

CPC分类号： H01L24/12 ,  H01L23/3171 ,  H01L24/11 ,  H01L24/16 ,  H01L2224/0381 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/1132 ,  H01L2224/114 ,  H01L2224/1147 ,  H01L2224/116 ,  H01L2224/131 ,  H01L2224/73253 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12044 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2224/13099 ,  H01L2924/00014

摘要： A semiconductor device includes a plurality of electrode layers provided at designated positions of a semiconductor substrate, an organic insulation film formed on the semiconductor substrate by selectively exposing designated areas of the electrode layers, and projection electrodes for outside connection, the projection electrodes being formed on the designated areas of the electrode layers. Thickness of the organic insulation film situated in the vicinity of the periphery of the projection electrodes is greater than thickness of the organic insulation film situated between the projection electrodes.

摘要翻译： 半导体器件包括设置在半导体衬底的指定位置处的多个电极层，通过选择性地暴露电极层的指定区域和用于外部连接的突出电极而形成在半导体衬底上的有机绝缘膜，所述突起电极形成在 电极层的指定区域。 位于突出电极周围附近的有机绝缘膜的厚度大于位于突出电极之间的有机绝缘膜的厚度。

公开(公告)号：US20100081269A1

公开(公告)日：2010-04-01

申请号：US12570459

申请日：2009-09-30

申请人： Yutaka Makino ,  Masamitsu Ikumo ,  Hiroyuki Yoda

发明人： Yutaka Makino ,  Masamitsu Ikumo ,  Hiroyuki Yoda

IPC分类号： H01L21/768

CPC分类号： H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/03902 ,  H01L2224/03912 ,  H01L2224/03914 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/11009 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/1181 ,  H01L2224/11849 ,  H01L2224/13006 ,  H01L2224/13076 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13155 ,  H01L2224/13566 ,  H01L2224/13687 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/00014 ,  H01L2924/0105 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00 ,  H01L2224/05552

摘要： A method for manufacturing semiconductor device which includes forming a first metal film over an electrode pad disposed on a substrate, forming a second metal film on the first metal film, forming a first oxide film on a surface of the first metal film and a second oxide film on a surface of the second metal film by oxidizing the surfaces of the first metal film and the second metal film, removing the first oxide film, and melting the second metal film after removing the first oxide film.

摘要翻译： 一种半导体器件的制造方法，其特征在于，在设置在基板上的电极焊盘上形成第一金属膜，在所述第一金属膜上形成第二金属膜，在所述第一金属膜的表面上形成第一氧化膜， 通过氧化第一金属膜和第二金属膜的表面，去除第一氧化物膜，以及在除去第一氧化物膜之后熔化第二金属膜，在第二金属膜的表面上形成膜。

公开(公告)号：US20080293234A1

公开(公告)日：2008-11-27

申请号：US12213819

申请日：2008-06-25

申请人： Masamitsu Ikumo ,  Hiroyuki Yoda ,  Eiji Watanabe

发明人： Masamitsu Ikumo ,  Hiroyuki Yoda ,  Eiji Watanabe

IPC分类号： H01L21/44

CPC分类号： H01L24/12 ,  H01L23/3171 ,  H01L24/11 ,  H01L24/16 ,  H01L2224/0381 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/1132 ,  H01L2224/114 ,  H01L2224/1147 ,  H01L2224/116 ,  H01L2224/131 ,  H01L2224/73253 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12044 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2224/13099 ,  H01L2924/00014

摘要： A semiconductor device includes a plurality of electrode layers provided at designated positions of a semiconductor substrate, an organic insulation film formed on the semiconductor substrate by selectively exposing designated areas of the electrode layers, and projection electrodes for outside connection, the projection electrodes being formed on the designated areas of the electrode layers. Thickness of the organic insulation film situated in the vicinity of the periphery of the projection electrodes is greater than thickness of the organic insulation film situated between the projection electrodes.

摘要翻译： 半导体器件包括设置在半导体衬底的指定位置处的多个电极层，通过选择性地暴露电极层的指定区域和用于外部连接的突出电极而形成在半导体衬底上的有机绝缘膜，所述突起电极形成在 电极层的指定区域。 位于突出电极周围附近的有机绝缘膜的厚度大于位于突出电极之间的有机绝缘膜的厚度。