Tantalum thin film capacitor
    1.
    发明授权
    Tantalum thin film capacitor 失效
    钽薄膜电容器

    公开(公告)号:US4364099A

    公开(公告)日:1982-12-14

    申请号:US179791

    申请日:1980-08-20

    IPC分类号: H01G4/10 H01L27/01

    CPC分类号: H01L27/016 H01G4/10

    摘要: A tantalum film capacitor has an .alpha.-tantalum as a lower electrode, a chemical conversion layer of .alpha.-tantalum as a dielectric and an upper electrode, an improvement involving forming a highly nitrogen-doped tantalum film between the .alpha.-tantalum and a substrate, and also, another improvement involving forming a transitional thin tantalum layer between said highly nitrogen-doped tantalum film and said .alpha.-tantalum. The nitrogen concentration of the highly nitrogen-doped tantalum film is from 14 to 30 atomic %. The electrical properties, especially leakage current, are improved over those of the prior art. A disadvantage of the conventional .alpha.-tantalum thin film capacitor, that is the necessity of using an expensive partial glazed Al.sub.2 O.sub.3 substrate, is eliminated, and a non-glazed Al.sub.2 O.sub.3 substrate can be used in the present invention.

    摘要翻译: 钽膜电容器具有作为下电极的α钽,作为电介质的α钽的化学转化层和上电极,涉及在α-钽和衬底之间形成高度氮掺杂钽膜的改进, 并且还涉及在所述高度氮掺杂钽膜和所述α-钽之间形成过渡薄钽层的另一改进。 高氮掺杂钽膜的氮浓度为14〜30原子%。 电性能,特别是漏电流,比现有技术的要好。 消除了常规α-钽薄膜电容器的缺点,即需要使用昂贵的部分釉面Al 2 O 3衬底,并且在本发明中可以使用非釉面Al 2 O 3衬底。

    Semiconductor-processing apparatus provided with self-cleaning device
    2.
    发明授权
    Semiconductor-processing apparatus provided with self-cleaning device 失效
    具有自清洁装置的半导体处理装置

    公开(公告)号:US07534469B2

    公开(公告)日:2009-05-19

    申请号:US11095314

    申请日:2005-03-31

    IPC分类号: C23C16/00

    摘要: A CVD apparatus comprising an optical unit detecting the mass of contaminants adhering to an inner surface of a CVD reactor by irradiating an inner surface of the reactor with light having monochromaticity through an optical window provided on an inner wall of the reactor and receiving its reflected light is provided.

    摘要翻译: 一种CVD装置,包括光学单元,其通过设置在反应器的内壁上的光学窗口照射具有单色光的反射器的内表面来检测附着在CVD反应器的内表面上的污染物的质量,并接收其反射光 被提供。

    Low-carbon-doped silicon oxide film and damascene structure using same
    3.
    发明授权
    Low-carbon-doped silicon oxide film and damascene structure using same 有权
    低碳掺杂氧化硅膜和镶嵌结构使用相同

    公开(公告)号:US07271093B2

    公开(公告)日:2007-09-18

    申请号:US10852637

    申请日:2004-05-24

    IPC分类号: H01L21/44

    摘要: A method of forming an interconnect for a semiconductor device using triple hard layers, comprises: forming a first hard layer serving as an etch stop layer on a metal interconnect-formed dielectric layer; forming a second hard layer on the first hard layer; forming a dielectric layer on the second hard layer; forming a third hard layer on the dielectric layer; forming a hole through the third and second hard layers, the dielectric layer, and the first hard layer; and filling the hole with metal to establish an interconnect. The second and third hard layers are each made of carbon-doped silicon oxide formed from a source gas and a redox gas, while controlling the carbon content in the second hard layer as a function of a flow rate of the redox gas.

    摘要翻译: 一种使用三层硬质层形成用于半导体器件的互连的方法包括:在金属互连形成的介电层上形成用作蚀刻停止层的第一硬层; 在所述第一硬质层上形成第二硬质层; 在所述第二硬质层上形成介电层; 在所述电介质层上形成第三硬质层; 通过第三和第二硬质层,电介质层和第一硬质层形成孔; 并用金属填充孔以建立互连。 第二和第三硬层各自由源气体和氧化还原气体形成的碳掺杂氧化硅制成,同时控制第二硬质层中的碳含量作为氧化还原气体的流量的函数。

    Iron component and a manufacturing method therefor
    4.
    发明授权
    Iron component and a manufacturing method therefor 有权
    铁组分及其制造方法

    公开(公告)号:US06780257B2

    公开(公告)日:2004-08-24

    申请号:US10051718

    申请日:2002-01-17

    IPC分类号: C21D900

    摘要: A base plate of a stainless-steel body material formed by pressing is polished and cleared of burrs by means of an abrasive material that consists mainly of Fe2O3 in a polishing process. The polished base plate is heated to a heat treatment temperature for solid solution in a reducing atmosphere in a heat treatment process. In this heat treatment process, an oxide in the constituents of minute fragments of the abrasive material in the surface of the body material of the base plate is reduced to leave iron, which is dispersed into the body material.

    摘要翻译: 通过压制形成的不锈钢主体材料的基板通过在抛光工艺中主要由Fe 2 O 3组成的研磨材料抛光和清除毛刺。 在热处理工序中将抛光后的基板加热至还原气氛中的固溶体的热处理温度。 在该热处理工序中,基板的主体材料表面的研磨材料的微小碎片成分中的氧化物被还原,留下分散在主体材料中的铁。

    Semiconductor substrate-supporting apparatus
    6.
    发明授权
    Semiconductor substrate-supporting apparatus 有权
    半导体基板支撑装置

    公开(公告)号:US06761771B2

    公开(公告)日:2004-07-13

    申请号:US09982454

    申请日:2001-10-17

    IPC分类号: H01L2100

    摘要: A substrate-supporting apparatus, wherein a substrate is not warped or distorted and a film with uniform thickness is formed, is a semiconductor substrate-supporting apparatus which supports and heats semiconductor substrates inside a vacuum-pumped reaction chamber. On the substrate-supporting surface of the semiconductor substrate-supporting apparatus, a concave portion which includes a depression slanting from the peripheral portion to the center is provided, the semiconductor substrate is supported in a position where the peripheral portion of the back surface of the substrate contacts the slanting surface of the concave portion, and the concave portion is formed so that an interval between the center of the concave portion and the semiconductor substrate becomes the designated distance. The slanting surface of the concave portion may include a portion of a spherical surface or a conical surface.

    摘要翻译: 一种衬底支撑装置,其中衬底不翘曲或变形,并且形成具有均匀厚度的膜,是在真空抽吸反应室内支撑和加热半导体衬底的半导体衬底支撑装置。 在半导体基板支撑装置的基板支撑面上设置有包括从周边部向中心倾斜的凹部的凹部,半导体基板被支撑在该半导体基板支撑装置的背面的周边部 基板与凹部的倾斜面接触,并且形成凹部,使得凹部的中心与半导体基板的间隔成为指定距离。 凹部的倾斜表面可以包括球形表面或锥形表面的一部分。

    Arrangement structure of the printed circuit board and the interface cable connector of a magnetic disk drive
    8.
    发明授权
    Arrangement structure of the printed circuit board and the interface cable connector of a magnetic disk drive 失效
    印刷电路板的布置结构和磁盘驱动器的接口电缆连接器

    公开(公告)号:US06351343B1

    公开(公告)日:2002-02-26

    申请号:US08798443

    申请日:1997-02-10

    IPC分类号: G11B3312

    CPC分类号: G11B25/043 G11B33/122

    摘要: An arrangement structure of the printed circuit board and the interface cable connector of a magnetic disk drive for increasing the degree of freedom of the arrangement of a spindle motor, and for minimizing the size of a printed circuit board. An interface cable connector is disposed on the side opposite to the spindle motor, and the printed circuit board is sized so as not to contact with the spindle motor in the height direction. This allows the degree of freedom of the arrangement of the spindle motor to increase. Further, the distance between the interface cable connector and the preamplifier connector on the printed circuit board is short. Thus, the size of the printed circuit board can be made as small as possible.

    摘要翻译: 印刷电路板和磁盘驱动器的接口电缆连接器的布置结构,用于增加主轴电动机布置的自由度,并使印刷电路板的尺寸最小化。 接口电缆连接器设置在与主轴电动机相对的一侧,并且印刷电路板的尺寸设计成不在高度方向上与主轴电动机接触。 这允许主轴电动机的布置的自由度增加。 此外,接口电缆连接器和印刷电路板上的前置放大器连接器之间的距离很短。 因此,可以使印刷电路板的尺寸尽可能小。

    Suspension attachment apparatus for a disk drive
    10.
    发明授权
    Suspension attachment apparatus for a disk drive 失效
    用于磁盘驱动器的悬挂附件装置

    公开(公告)号:US5355267A

    公开(公告)日:1994-10-11

    申请号:US137395

    申请日:1993-10-14

    摘要: A suspension for a read/write head of a disk drive is fixed to a side wall of an arm. If two heads are to be suspended, a first suspension for one head and a second suspension for the other head are fixed to opposite side walls of the arm. Since the suspension is fixed to the side wall of the arm, there are no screw heads protruding or projections formed by hot staking on the top and the bottom surfaces of the arm and it is not necessary to make screw holes which extend from the top surface or the bottom surface into the arm perpendicularly to these surfaces. Thus, the vertical thickness of the head carriage assembly can be decreased.

    摘要翻译: 用于磁盘驱动器的读/写头的悬架固定到臂的侧壁。 如果要悬挂两个头部,则用于一个头部的第一悬架和用于另一个头部的第二悬架固定到臂的相对侧壁。 由于悬架固定在臂的侧壁上,因此在臂的顶面和底面上没有螺纹头突出或通过热铆接形成的凸起,并且不需要制造从顶面延伸的螺纹孔 或垂直于这些表面的臂的底面。 因此,头托架组件的垂直厚度可以减小。