公开(公告)号：US07505879B2

公开(公告)日：2009-03-17

申请号：US11003829

申请日：2004-12-06

申请人： Masayuki Tomoyasu ,  Hin Oh ,  Hideki Tanaka

发明人： Masayuki Tomoyasu ,  Hin Oh ,  Hideki Tanaka

IPC分类号： G06F7/60

CPC分类号： H01J37/32935

摘要： According to the present invention, multivariate analysis model expressions are generated for a plasma processing apparatus 100A and a plasma processing apparatus 100B by executing a multivariate analysis of detection data provided by a plurality of sensors included in each plasma processing apparatus when the plasma processing apparatuses 100A and 100B operate based upon first setting data. Then, when the plasma processing apparatus 100A operates based upon new second setting data, detection data provided by the plurality of sensors in the plasma processing apparatus 100A are used to generate a corresponding multivariate analysis model expression, and by using the new multivariate analysis model expression corresponding to the plasma processing apparatus 100A generated based upon the second setting data and to the plasma processing apparatus 100B, a multivariate analysis model expression corresponding to the new second setting data is generated four the plasma processing apparatus 100B.

摘要翻译： 根据本发明，通过对等离子体处理装置100A中的等离子体处理装置100A中包含的多个传感器所提供的检测数据进行多元分析，为等离子体处理装置100A和等离子体处理装置100B生成多变量分析模型表达式 和100B基于第一设定数据进行操作。 然后，当等离子体处理装置100A基于新的第二设定数据进行动作时，由等离子体处理装置100A中的多个传感器提供的检测数据用于生成相应的多变量分析模型表达式，并且通过使用新的多变量分析模型表达式 对应于基于第二设定数据生成的等离子体处理装置100A和等离子体处理装置100B，生成与等离子体处理装置100B相对应的新的第二设定数据的多变量分析模型表达式。

公开(公告)号：US20050143952A1

公开(公告)日：2005-06-30

申请号：US11003829

申请日：2004-12-06

申请人： Masayuki Tomoyasu ,  Hin Oh ,  Hideki Tanaka

发明人： Masayuki Tomoyasu ,  Hin Oh ,  Hideki Tanaka

IPC分类号： H01J37/32 ,  G06F101/14

CPC分类号： H01J37/32935

摘要： According to the present invention, multivariate analysis model expressions are generated for a plasma processing apparatus 100A and a plasma processing apparatus 100B by executing a multivariate analysis of detection data provided by a plurality of sensors included in each plasma processing apparatus when the plasma processing apparatuses 100A and 100B operate based upon first setting data. Then, when the plasma processing apparatus 100A operates based upon new second setting data, detection data provided by the plurality of sensors in the plasma processing apparatus 100A are used to generate a corresponding multivariate analysis model expression, and by using the new multivariate analysis model expression corresponding to the plasma processing apparatus 100A generated based upon the second setting data and to the plasma processing apparatus 100B, a multivariate analysis model expression corresponding to the new second setting data is generated four the plasma processing apparatus 100B.

摘要翻译： 根据本发明，对等离子体处理装置100A和等离子体处理装置100B，通过对等离子体处理装置中包含的多个传感器所提供的检测数据进行多元分析，生成多变量分析模型表达式 设备100A和100​​B基于第一设置数据进行操作。 然后，当等离子体处理装置100A基于新的第二设定数据进行动作时，使用等离子体处理装置100A中的多个传感器提供的检测数据来生成相应的多变量分析模型表达式，并且通过使用新的多变量分析 对应于基于第二设定数据生成的等离子体处理装置100A的模型表达式和等离子体处理装置100B，生成与新的第二设定数据对应的多变量分析模型表达式四等离子体处理装置100B。

公开(公告)号：US07289866B2

公开(公告)日：2007-10-30

申请号：US11030049

申请日：2005-01-07

申请人： Masayuki Tomoyasu

发明人： Masayuki Tomoyasu

IPC分类号： G06F19/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32935 ,  G05B2219/32201 ,  G05B2219/45031 ,  H01J37/32091 ,  H01L21/67069 ,  Y02P90/22

摘要： In a plasma processing method for monitoring data, first and second measurement data are obtained; and a first and a second model are formulated based on the first and the second measurement data. Further, third measurement data is obtained; and weight factors are obtained by setting the third measurement data as weighted measurement data wherein the weighted measurement data is obtained by multiplying each of the first and the second measurement data by one of the weight factors to produce first and second weighted data and summing the thus produced first and the second weighted data. Therefore, a third model is formulated by multiplying each of the first and the second model by one of the weight factors to produce first and second weighted models, and summing the thus produced first and the second weighted models.

摘要翻译： 在用于监视数据的等离子体处理方法中，获得第一和第二测量数据; 并且基于第一和第二测量数据来制定第一和第二模型。 此外，获得第三测量数据; 并且通过将第三测量数据设置为加权测量数据来获得加权因子，其中通过将第一和第二测量数据中的每一个乘以权重因子之一来获得加权测量数据，以产生第一和第二加权数据，并因此相加 产生第一和第二加权数据。 因此，通过将第一模型和第二模型中的每一个乘以权重因子之一来产生第一和第二加权模型并对由此产生的第一和第二加权模型进行求和来形成第三模型。

公开(公告)号：US07172675B2

公开(公告)日：2007-02-06

申请号：US10742779

申请日：2003-12-23

申请人： Masayuki Tomoyasu

发明人： Masayuki Tomoyasu

IPC分类号： H01L21/00 ,  C23C16/00

CPC分类号： H01L21/67253 ,  H01J37/32458 ,  H01J37/3266 ,  H01J37/32935 ,  H01L21/67069

摘要： An observation window airtightly installed at a wall of a processing room of a plasma processing apparatus includes a body having a through hole with an opening facing the processing room, a transparent member installed at a side of the body opposite to the processing room and a magnetic pole pair having two different magnetic poles disposed opposite each other with the hole interposed therebetween. The magnetic pole pair is configured to have a sufficient magnetic field strength to prevent electrons which form a plasma in the processing room from reaching the transparent member through the hole.

摘要翻译： 气密地安装在等离子体处理装置的处理室的壁上的观察窗包括具有通向与处理室相对的开口的通孔的主体，安装在与处理室相对的一侧的透明构件和磁 具有彼此相对设置的两个不同磁极的极对，其间插入孔。 磁极对被配置为具有足够的磁场强度，以防止在处理室中形成等离子体的电子通过孔到达透明构件。

公开(公告)号：US20060184264A1

公开(公告)日：2006-08-17

申请号：US11058321

申请日：2005-02-16

申请人： James Willis ,  Merritt Funk ,  Kevin Lally ,  Kevin Pinto ,  Masayuki Tomoyasu ,  Raymond Peterson ,  Radha Sundararajan

发明人： James Willis ,  Merritt Funk ,  Kevin Lally ,  Kevin Pinto ,  Masayuki Tomoyasu ,  Raymond Peterson ,  Radha Sundararajan

IPC分类号： G06F19/00

CPC分类号： G05B19/4184 ,  G05B2219/31356 ,  G05B2219/32179 ,  G05B2219/45031 ,  Y02P80/40 ,  Y02P90/14 ,  Y02P90/20 ,  Y02P90/22 ,  Y02P90/86

摘要： A method for implementing FDC in an APC system including receiving an FDC model from memory; providing the FDC model to a process model calculation engine; computing a vector of predicted dependent process parameters using the process model calculation engine; receiving a process recipe comprising a set of recipe parameters, providing the process recipe to a process module; executing the process recipe to produce a vector of measured dependent process parameters; calculating a difference between the vector of predicted dependent process parameters and the vector of measured dependent process parameters; comparing the difference to a threshold value; and declaring a fault condition when the difference is greater than the threshold value.

公开(公告)号：US07153387B1

公开(公告)日：2006-12-26

申请号：US10049989

申请日：2000-08-11

申请人： Masayuki Tomoyasu

发明人： Masayuki Tomoyasu

IPC分类号： H01L21/00

CPC分类号： H01J37/3244 ,  H01J37/32082 ,  H01J37/32568 ,  H01J37/32577

摘要： There is provided a plasma processing system and method capable of decreasing the non-uniformity of a field distribution on the surface of an electrode and making the density of plasma uniform, in a plasma processing using a high density plasma which can cope with a further scale down. First and second electrodes 21 and 5 are provided in a chamber so as to face each other. A feeder plate 52 is arranged so as to be slightly spaced from the opposite surface of a surface serving as a feeding plane of the first electrode facing the second electrode 5. A feeder rod 51 is connected to the feeder plate 52 at a position which is radially shifted from a position corresponding to the center of the feeding plane of the first electrode 21. The feeder plate 52 is rotated to rotate the feeding position of the feeder rod 51 on the feeding plane of the first electrode. A high frequency electric power is thus fed to form a high frequency electric field between the first and second electrodes 21 and 5 to form plasma to plasma-process a substrate W.

摘要翻译： 提供了一种等离子体处理系统和方法，其能够降低电极表面上的场分布的不均匀性并使等离子体的密度均匀，在等离子体处理中使用能够应对更高比例的高密度等离子体 下。 第一和第二电极21和5设置在腔室中以彼此面对。 馈电板52布置成与用作面向第二电极5的第一电极的馈电面的表面的相对表面稍微间隔开。 馈送杆51在从与第一电极21的馈送平面的中心对应的位置径向偏移的位置处连接到馈电板52。 馈送板52旋转以使馈送杆51的馈送位置在第一电极的馈送平面上旋转。 因此，高频电力被馈送以在第一和第二电极21和5之间形成高频电场，以形成等离子体以等离子体处理衬底W.

公开(公告)号：US07047095B2

公开(公告)日：2006-05-16

申请号：US10727544

申请日：2003-12-05

申请人： Masayuki Tomoyasu

发明人： Masayuki Tomoyasu

IPC分类号： G06F19/00

CPC分类号： G05B19/41875 ,  G05B2219/33327 ,  G05B2219/37575 ,  G05B2219/37576 ,  G05B2219/45031 ,  Y02P90/22

摘要： A process control system that controls processing executed on semiconductor wafers by processing apparatuses 120, 122, 124 installed in each bay (area) 110 inside a factory the processing results of which are predictable, having installed in the corresponding bay, at least one measuring apparatus 130 that executes a measuring operation on workpieces undergoing the processing in the bay, a transfer path 140 of a transfer apparatus, through which the workpieces are transferred among various apparatuses installed within the bay including the individual processing apparatuses and the measuring apparatus and a process control device 150 that controls the processing apparatuses, the measuring apparatus and the transfer apparatus in the bay. This structure reduces the length of time (cycle time) to elapse from the processing through the inspection operation and also improves the operating rate of each processing apparatus.

摘要翻译： 一种过程控制系统，其通过安装在工厂内的每个托架（区域）110中的处理装置120,122,124来控制在半导体晶片上执行的处理，其处理结果可预测地安装在相应的间隔中，至少一个测量装置 130，其执行在间隔中进行处理的工件上的测量操作，传送装置的传送路径140，工件在安装在包括各个处理设备和测量设备的托架内的各种设备中被传送到其中，并且处理控制 设备150，其控制在间隔中的处理设备，测量设备和传送设备。 该结构减少了从通过检查操作的处理中经过的时间长度（循环时间），并且还提高了每个处理装置的操作速率。

公开(公告)号：US20050154482A1

公开(公告)日：2005-07-14

申请号：US11030049

申请日：2005-01-07

申请人： Masayuki Tomoyasu

发明人： Masayuki Tomoyasu

IPC分类号： H05H1/00 ,  C23C16/50 ,  C23F4/00 ,  H01J37/32 ,  H01L21/00 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/66 ,  H05H1/46 ,  G06F19/00

CPC分类号： H01J37/32935 ,  G05B2219/32201 ,  G05B2219/45031 ,  H01J37/32091 ,  H01L21/67069 ,  Y02P90/22

摘要： In a plasma processing method for monitoring data, first and second measurement data are obtained; and a first and a second model are formulated based on the first and the second measurement data. Further, third measurement data is obtained; and weight factors are obtained by setting the third measurement data as weighted measurement data wherein the weighted measurement data is obtained by multiplying each of the first and the second measurement data by one of the weight factors to produce first and second weighted data and summing the thus produced first and the second weighted data. Therefore, a third model is formulated by multiplying each of the first and the second model by one of the weight factors to produce first and second weighted models, and summing the thus produced first and the second weighted models.

摘要翻译： 在用于监视数据的等离子体处理方法中，获得第一和第二测量数据; 并且基于第一和第二测量数据来制定第一和第二模型。 此外，获得第三测量数据; 并且通过将第三测量数据设置为加权测量数据来获得加权因子，其中通过将第一和第二测量数据中的每一个乘以权重因子之一来获得加权测量数据，以产生第一和第二加权数据，并因此相加 产生第一和第二加权数据。 因此，通过将第一模型和第二模型中的每一个乘以权重因子之一来产生第一和第二加权模型并对由此产生的第一和第二加权模型进行求和来形成第三模型。

公开(公告)号：US06544380B2

公开(公告)日：2003-04-08

申请号：US10079600

申请日：2002-02-19

申请人： Masayuki Tomoyasu ,  Akira Koshiishi ,  Kosuke Imafuku ,  Shosuke Endo ,  Kazuhiro Tahara ,  Yukio Naito ,  Kazuya Nagaseki ,  Keizo Hirose ,  Mitsuaki Komino ,  Hiroto Takenaka ,  Hiroshi Nishikawa ,  Yoshio Sakamoto

发明人： Masayuki Tomoyasu ,  Akira Koshiishi ,  Kosuke Imafuku ,  Shosuke Endo ,  Kazuhiro Tahara ,  Yukio Naito ,  Kazuya Nagaseki ,  Keizo Hirose ,  Mitsuaki Komino ,  Hiroto Takenaka ,  Hiroshi Nishikawa ,  Yoshio Sakamoto

IPC分类号： H05H100

CPC分类号： C23C16/45565 ,  C23C16/4405 ,  C23C16/4407 ,  C23C16/4483 ,  C23C16/4485 ,  C23C16/4557 ,  C23C16/5096 ,  C23C16/517 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32155 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/32963 ,  Y10S156/916

摘要： An apparatus for treating a substrate which includes a chamber and an opening formed in the chamber allowing the substrate to be conveyed into the chamber or taken out thereof. The chamber, also, includes a detachable baffle plate that fits around an electrode. For treatment to commence, the substrate is placed on the electrode and the chamber is exhausted of or supplied with gases. The electrode is then vertically lifted together with the baffle plate and the baffle plate is moved either to a position that is higher in level than an upper end of the opening of the chamber or to a position that is lower in level than a lower end of the opening of the chamber. This allows the baffle plate to shield a region near the opening of the chamber from a treatment region and allows reaction products to be adhered to the baffle plate.

摘要翻译： 一种用于处理基板的设备，其包括室和形成在所述室中的开口，使得所述基板被输送到所述室中或从其中取出。 该腔室还包括一个可拆卸的挡板，其围绕电极配合。 为了开始处理，将基板放置在电极上，并且室被排出或供应气体。 然后将电极与挡板一起垂直提升，并且挡板移动到比室的开口的上端更高的位置，或者移动到比下端更低的位置 房间的开放。 这允许挡板将腔室开口附近的区域与处理区域隔离，并允许反应产物粘附到挡板。

公开(公告)号：US07877161B2

公开(公告)日：2011-01-25

申请号：US10736983

申请日：2003-12-17

申请人： Masayuki Tomoyasu ,  Merritt Lane Funk ,  Kevin Augustine Pinto ,  Masaya Odagiri ,  Lemuel Chen ,  Asao Yamashita ,  Akira Iwami ,  Hiroyuki Takahashi

发明人： Masayuki Tomoyasu ,  Merritt Lane Funk ,  Kevin Augustine Pinto ,  Masaya Odagiri ,  Lemuel Chen ,  Asao Yamashita ,  Akira Iwami ,  Hiroyuki Takahashi

IPC分类号： G06F19/00 ,  H01L21/302

CPC分类号： H01L21/67253 ,  C23C16/4405 ,  C25D11/02 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67155 ,  H01L21/67207 ,  H01L21/67248 ,  H01L22/20

摘要： A processing system and method for chemical oxide removal (COR) is presented, wherein the processing system comprises a first treatment chamber and a second treatment chamber, wherein the first and second treatment chambers are coupled to one another. The first treatment chamber comprises a chemical treatment chamber that provides a temperature controlled chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. The second treatment chamber comprises a heat treatment chamber that provides a temperature controlled chamber, thermally insulated from the chemical treatment chamber. The heat treatment chamber provides a substrate holder for controlling the temperature of the substrate to thermally process the chemically treated surfaces on the substrate.

摘要翻译： 提出了一种用于化学氧化物去除（COR）的处理系统和方法，其中处理系统包括第一处理室和第二处理室，其中第一和第二处理室彼此耦合。 第一处理室包括提供温度控制室的化学处理室和用于支撑用于化学处理的基板的独立温度控制的基板保持器。 在包括表面温度和气体压力的受控条件下，将基底暴露于气态化学物质，例如HF / NH 3。 第二处理室包括热处理室，其提供与化学处理室热绝缘的温度控制室。 热处理室提供用于控制基板的温度以热处理基板上化学处理的表面的基板保持器。