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1.发明授权Engineered substrates for semiconductor devices and associated systems and methods 有权用于半导体器件的工程衬底及相关系统和方法公开(公告)号：US09269858B2
公开(公告)日：2016-02-23
申请号：US13223162
申请日：2011-08-31
CPC分类号： H01L33/0079 , H01L33/0062 , H01L33/0066 , H01L33/007 , H01L33/0075 , H01L33/0095 , H01L33/02 , H01L33/16 , H01L33/46
摘要： Engineered substrates for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a transducer structure having a plurality of semiconductor materials including a radiation-emitting active region. The device further includes an engineered substrate having a first material and a second material, at least one of the first material and the second material having a coefficient of thermal expansion at least approximately matched to a coefficient of thermal expansion of at least one of the plurality of semiconductor materials. At least one of the first material and the second material is positioned to receive radiation from the active region and modify a characteristic of the light.
摘要翻译： 本文公开了用于半导体器件的工程衬底。 根据特定实施例的装置包括具有包括发射辐射有源区域的多个半导体材料的换能器结构。 所述装置还包括具有第一材料和第二材料的工程衬底，所述第一材料和所述第二材料中的至少一个具有与所述多个材料中的至少一个的热膨胀系数至少近似匹配的热膨胀系数 的半导体材料。 第一材料和第二材料中的至少一个被定位成接收来自有源区域的辐射并改变光的特性。
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2.发明申请ENGINEERED SUBSTRATES FOR SEMICONDUCTOR DEVICES AND ASSOCIATED SYSTEMS AND METHODS 有权用于半导体器件和相关系统的工程衬底和方法公开(公告)号：US20130049043A1
公开(公告)日：2013-02-28
申请号：US13223162
申请日：2011-08-31
CPC分类号： H01L33/0079 , H01L33/0062 , H01L33/0066 , H01L33/007 , H01L33/0075 , H01L33/0095 , H01L33/02 , H01L33/16 , H01L33/46
摘要： Engineered substrates for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a transducer structure having a plurality of semiconductor materials including a radiation-emitting active region. The device further includes an engineered substrate having a first material and a second material, at least one of the first material and the second material having a coefficient of thermal expansion at least approximately matched to a coefficient of thermal expansion of at least one of the plurality of semiconductor materials. At least one of the first material and the second material is positioned to receive radiation from the active region and modify a characteristic of the light.
摘要翻译： 本文公开了用于半导体器件的工程衬底。 根据特定实施例的装置包括具有包括发射辐射有源区域的多个半导体材料的换能器结构。 所述装置还包括具有第一材料和第二材料的工程衬底，所述第一材料和所述第二材料中的至少一个具有与所述多个材料中的至少一个的热膨胀系数至少近似匹配的热膨胀系数 的半导体材料。 第一材料和第二材料中的至少一个被定位成接收来自有源区域的辐射并改变光的特性。
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3.发明申请SOLID STATE LIGHTING DIES WITH QUANTUM EMITTERS AND ASSOCIATED METHODS OF MANUFACTURING 有权具有量子发射体和相关制造方法的固态照明灯公开(公告)号：US20120056206A1
公开(公告)日：2012-03-08
申请号：US12874360
申请日：2010-09-02
申请人： Cem Basceri , Casey Kurth , Thomas Gehrke , Kevin Tetz
发明人： Cem Basceri , Casey Kurth , Thomas Gehrke , Kevin Tetz
CPC分类号： H01L33/007 , H01L33/02 , H01L33/08 , H01L2924/0002 , H01L2924/00
摘要： Solid state lighting dies and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting die includes a substrate material, a first semiconductor material, a second semiconductor material, and an active region between the first and second semiconductor materials. The second semiconductor material has a surface facing away from the substrate material. The solid state lighting die also includes a plurality of openings extending from the surface of the second semiconductor material toward the substrate material.
摘要翻译： 本文公开了固态照明管芯及其相关的制造方法。 在一个实施例中，固态照明管芯包括衬底材料，第一半导体材料，第二半导体材料以及第一和第二半导体材料之间的有源区。 第二半导体材料具有背离衬底材料的表面。 固态照明裸片还包括从第二半导体材料的表面向衬底材料延伸的多个开口。
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公开(公告)号：US09620670B2
公开(公告)日：2017-04-11
申请号：US12874360
申请日：2010-09-02
申请人： Cem Basceri , Casey Kurth , Thomas Gehrke , Kevin Tetz
发明人： Cem Basceri , Casey Kurth , Thomas Gehrke , Kevin Tetz
CPC分类号： H01L33/007 , H01L33/02 , H01L33/08 , H01L2924/0002 , H01L2924/00
摘要： Solid state lighting dies and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting die includes a substrate material, a first semiconductor material, a second semiconductor material, and an active region between the first and second semiconductor materials. The second semiconductor material has a surface facing away from the substrate material. The solid state lighting die also includes a plurality of openings extending from the surface of the second semiconductor material toward the substrate material.
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公开(公告)号：US20120056219A1
公开(公告)日：2012-03-08
申请号：US12874396
申请日：2010-09-02
申请人： Cem Basceri , Casey Kurth , Kevin Tetz
发明人： Cem Basceri , Casey Kurth , Kevin Tetz
CPC分类号： H01L25/50 , H01L25/0756 , H01L33/382 , H01L33/486 , H01L33/501 , H01L33/62 , H01L2924/0002 , H01L2933/0033 , H01L2933/0041 , H05K1/0203 , H05K1/0306 , H05K2201/10106 , H01L2924/00
摘要： Solid state lights (SSLs) including a back-to-back solid state emitters (SSEs) and associated methods are disclosed herein. In various embodiments, an SSL can include a carrier substrate having a first surface and a second surface different from the first surface. First and second through substrate interconnects (TSIs) can extend from the first surface of the carrier substrate to the second surface. The SSL can further include a first and a second SSE, each having a front side and a back side opposite the front side. The back side of the first SSE faces the first surface of the carrier substrate and the first SSE is electrically coupled to the first and second TSIs. The back side of the second SSE faces the second surface of the carrier substrate and the second SSE is electrically coupled to the first and second TSIs.
摘要翻译： 本文公开了包括背对背固态发射器（SSEs）和相关方法的固态光（SSL）。 在各种实施例中，SSL可以包括具有不同于第一表面的第一表面和第二表面的载体衬底。 第一和第二通过衬底互连（TSI）可以从载体衬底的第一表面延伸到第二表面。 SSL还可以包括第一和第二SSE，每个SSE具有与前侧相对的前侧和后侧。 第一SSE的背面面向载体基板的第一表面，并且第一SSE电耦合到第一和第二TSI。 第二SSE的背面面向载体基板的第二表面，而第二SSE电耦合到第一和第二TSI。
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公开(公告)号：US09443834B2
公开(公告)日：2016-09-13
申请号：US12874396
申请日：2010-09-02
申请人： Cem Basceri , Casey Kurth , Kevin Tetz
发明人： Cem Basceri , Casey Kurth , Kevin Tetz
IPC分类号： H01L25/075 , H01L33/38 , H05K1/02 , H05K1/03
CPC分类号： H01L25/50 , H01L25/0756 , H01L33/382 , H01L33/486 , H01L33/501 , H01L33/62 , H01L2924/0002 , H01L2933/0033 , H01L2933/0041 , H05K1/0203 , H05K1/0306 , H05K2201/10106 , H01L2924/00
摘要： Solid state lights (SSLs) including a back-to-back solid state emitters (SSEs) and associated methods are disclosed herein. In various embodiments, an SSL can include a carrier substrate having a first surface and a second surface different from the first surface. First and second through substrate interconnects (TSIs) can extend from the first surface of the carrier substrate to the second surface. The SSL can further include a first and a second SSE, each having a front side and a back side opposite the front side. The back side of the first SSE faces the first surface of the carrier substrate and the first SSE is electrically coupled to the first and second TSIs. The back side of the second SSE faces the second surface of the carrier substrate and the second SSE is electrically coupled to the first and second TSIs.
摘要翻译： 本文公开了包括背对背固态发射器（SSEs）和相关方法的固态光（SSL）。 在各种实施例中，SSL可以包括具有不同于第一表面的第一表面和第二表面的载体衬底。 第一和第二通过衬底互连（TSI）可以从载体衬底的第一表面延伸到第二表面。 SSL还可以包括第一和第二SSE，每个SSE具有与前侧相对的前侧和后侧。 第一SSE的背面面向载体基板的第一表面，并且第一SSE电耦合到第一和第二TSI。 第二SSE的背面面向载体基板的第二表面，而第二SSE电耦合到第一和第二TSI。
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公开(公告)号：US20060281238A1
公开(公告)日：2006-12-14
申请号：US11474431
申请日：2006-06-26
申请人： Christopher Harris , Thomas Gehrke , T. Weeks , Cem Basceri , Elif Berkman
发明人： Christopher Harris , Thomas Gehrke , T. Weeks , Cem Basceri , Elif Berkman
IPC分类号： H01L21/338
CPC分类号： H01L29/7783 , H01L29/2003
摘要： A method of compensating resistivity of a near-surface region of a substrate includes epitaxially growing a buffer layer on the substrate, wherein the buffer is grown as having a dopant concentration as dependent on resistivity and conductivity of the substrate, so as to deplete residual or excess charge within the near-surface region of the substrate. The dopant profile of the buffer layer be smoothly graded, or may consist of sub-layers of different dopant concentration, to also provide a highly resistive upper portion of the buffer layer ideal for subsequent device growth. Also, the buffer layer may be doped with carbon, and aluminum may be used to getter the carbon during epitaxial growth.
摘要翻译： 补偿衬底的近表面区域的电阻率的方法包括在衬底上外延生长缓冲层，其中缓冲液生长为具有取决于衬底的电阻率和导电性的掺杂剂浓度，从而消耗残余或 在基板的近表面区域内的过量电荷。 缓冲层的掺杂剂分布平滑地分级，或者可以由不同掺杂剂浓度的子层构成，还提供缓冲层的高度电阻上部，对于随后的器件生长是理想的。 此外，缓冲层可以掺杂碳，并且可以在外延生长期间使用铝来吸收碳。
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8.发明授权公开(公告)号：US08847198B2
公开(公告)日：2014-09-30
申请号：US13116366
申请日：2011-05-26
申请人： Cem Basceri , Thomas Gehrke , Charles M. Watkins
发明人： Cem Basceri , Thomas Gehrke , Charles M. Watkins
CPC分类号： H01L33/0075 , H01L33/005 , H01L33/06 , H01L33/08 , H01L33/38 , H01L33/502 , H01L33/508 , H01L2933/0033 , H01L2933/0041
摘要： Various embodiments of light emitting devices with built-in chromaticity conversion and associated methods of manufacturing are described herein. In one embodiment, a method for manufacturing a light emitting device includes forming a first semiconductor material, an active region, and a second semiconductor material on a substrate material in sequence, the active region being configured to produce a first emission. A conversion material is then formed on the second semiconductor material. The conversion material has a crystalline structure and is configured to produce a second emission. The method further includes adjusting a characteristic of the conversion material such that a combination of the first and second emission has a chromaticity at least approximating a target chromaticity of the light emitting device.
摘要翻译： 本文描述了具有内置色度转换和相关制造方法的发光器件的各种实施例。 在一个实施例中，制造发光器件的方法包括依次在衬底材料上形成第一半导体材料，有源区和第二半导体材料，所述有源区被配置为产生第一发射。 然后在第二半导体材料上形成转换材料。 转换材料具有晶体结构并且被配置为产生第二发射。 该方法还包括调整转换材料的特性，使得第一和第二发射的组合具有至少近似于发光器件的目标色度的色度。
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公开(公告)号：US08664664B2
公开(公告)日：2014-03-04
申请号：US11651528
申请日：2007-01-10
申请人： Christopher Harris , Cem Basceri , Thomas Gehrke , Cengiz Balkas
发明人： Christopher Harris , Cem Basceri , Thomas Gehrke , Cengiz Balkas
IPC分类号： H01L29/15 , H01L31/0312
CPC分类号： H01L33/38 , H01L21/0475 , H01L23/367 , H01L23/3738 , H01L29/0657 , H01L29/1608 , H01L29/20 , H01L29/2003 , H01L29/417 , H01L33/0079 , H01L33/32 , H01L2924/0002 , H01L2924/10158 , H01L2933/0016 , H01L2924/00
摘要： A dimpled substrate and method of making including a substrate of high thermal conductivity having a first main surface and a second main surface opposite the first main surface. Active epitaxial layers are formed on the first main surface of the substrate. Dimples are formed as extending from the second main surface into the substrate toward the first main surface. An electrical contact of low resistance material is disposed on the second main surface and within the dimples. A back contact of low resistance and low loss is thus provided while maintaining the substrate as an effective heat sink.
摘要翻译： 一种凹凸基板及其制造方法，包括具有第一主表面和与第一主表面相对的第二主表面的具有高导热性的基板。 在衬底的第一主表面上形成有源外延层。 凹坑形成为从第二主表面延伸到基板朝向第一主表面。 低电阻材料的电触点设置在第二主表面和凹坑内。 因此，在保持基板作为有效散热器的同时提供低电阻和低损耗的背接触。
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公开(公告)号：US07485512B2
公开(公告)日：2009-02-03
申请号：US11474431
申请日：2006-06-26
IPC分类号： H01L21/338
CPC分类号： H01L29/7783 , H01L29/2003
摘要： A method of compensating resistivity of a near-surface region of a substrate includes epitaxially growing a buffer layer on the substrate, wherein the buffer is grown as having a dopant concentration as dependent on resistivity and conductivity of the substrate, so as to deplete residual or excess charge within the near-surface region of the substrate. The dopant profile of the buffer layer be smoothly graded, or may consist of sub-layers of different dopant concentration, to also provide a highly resistive upper portion of the buffer layer ideal for subsequent device growth. Also, the buffer layer may be doped with carbon, and aluminum may be used to getter the carbon during epitaxial growth.
摘要翻译： 补偿衬底的近表面区域的电阻率的方法包括在衬底上外延生长缓冲层，其中缓冲液生长为具有取决于衬底的电阻率和导电性的掺杂剂浓度，从而消耗残余或 在基板的近表面区域内的过量电荷。 缓冲层的掺杂剂分布平滑地分级，或者可以由不同掺杂剂浓度的子层构成，还提供缓冲层的高度电阻上部，对于随后的器件生长是理想的。 此外，缓冲层可以掺杂碳，并且可以在外延生长期间使用铝来吸收碳。
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