LIGHT EMITTING DIODE WITH ANGLE-DEPENDENT OPTICAL FILTER

    公开(公告)号:US20230207606A1

    公开(公告)日:2023-06-29

    申请号:US17564212

    申请日:2021-12-29

    摘要: Disclosed herein are techniques for extracting and collimating light emitted by a light emitting diode (LED). According to certain embodiments, a device includes an LED configured to emit light in a first wavelength range, and an angle-dependent optical filter optically coupled to the LED. A transmission (or reflection) wavelength range of the angle-dependent optical filter varies with an angle of incidence (AOI) of the light incident on the angle-dependent optical filter, such that the angle-dependent optical filter transmits most of light emitted from the LED and having small AOIs, and reflects most of light emitted from the LED and having large AOIs, thereby reducing the divergence angle of the emitted light.

    NANOWIRE ARCHITECTURE FOR MICRO-DISPLAYS
    7.
    发明公开

    公开(公告)号:US20230369535A1

    公开(公告)日:2023-11-16

    申请号:US17741245

    申请日:2022-05-10

    摘要: A light source includes an array of core-shell nanowire micro-LEDs. Each core-shell nanowire micro-LED includes: a first semiconductor epitaxial layer including a nanowire core formed therein; a first dielectric material layer in physical contact with and surrounding sidewalls of a bottom portion of the nanowire core, or in physical contact with a bottom surface of the nanowire core; a second dielectric material layer in physical contact with a top surface of the nanowire core; active layers grown only on sidewalls of the nanowire core and configured to emit visible light; and a second semiconductor layer grown on the active layers, where the nanowire core and the second semiconductor layer are oppositely doped.

    SEMIPOLAR MICRO-LED
    9.
    发明申请

    公开(公告)号:US20230130445A1

    公开(公告)日:2023-04-27

    申请号:US17510282

    申请日:2021-10-25

    摘要: A light emitting diode includes an n-type semiconductor layer including a pit structure formed therein, active layers grown only on sidewalls of the pit structure and configured to emit light, and a p-type semiconductor layer on the active layers and at least partially in the pit structure. In one embodiment, the pit structure is characterized by a shape of an inverted pyramid. The pit structure is formed in the n-type semiconductor layer by, for example, etching the n-type semiconductor layer using an etch mask layer having apertures with slanted sidewalls, or growing the n-type semiconductor layer on a substrate through a mask layer having an array of apertures.