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1.发明授权Methods for fabricating self-aligning semicondutor heterostructures using silicon nanowires 有权使用硅纳米线制造自对准半导体异质结构的方法公开(公告)号：US08809093B2
公开(公告)日：2014-08-19
申请号：US12949758
申请日：2010-11-18
IPC分类号： H01L21/20 , B82Y10/00 , H01L29/06 , H01L29/775 , H01L29/66
CPC分类号： H01L31/035227 , B82Y10/00 , B82Y40/00 , H01L21/02381 , H01L21/0243 , H01L21/02521 , H01L21/0259 , H01L21/02639 , H01L29/0665 , H01L29/0676 , H01L29/127 , H01L29/267 , H01L29/413 , H01L29/66439 , H01L29/775 , H01L33/06 , Y10S977/762
摘要： Methods for fabricating self-aligned heterostructures and semiconductor arrangements using silicon nanowires are described.
摘要翻译： 描述了使用硅纳米线制造自对准异质结构和半导体布置的方法。
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公开(公告)号：US20120161207A1
公开(公告)日：2012-06-28
申请号：US12952181
申请日：2010-11-22
IPC分类号： H01L29/772 , H01L21/336 , H01L29/02
CPC分类号： G01N27/4146 , B82Y10/00 , B82Y15/00 , H01L29/0676 , H01L29/66666 , H01L29/775
摘要： Methods for fabricating silicon nanowire chemical sensing devices, devices thus obtained, and methods for utilizing devices for sensing and measuring chemical concentration of selected species in a fluid are described. Devices may comprise a metal-oxide-semiconductor field-effect transistor (MOSFET) structure.
摘要翻译： 描述了制造硅纳米线化学感测装置的方法，如此获得的装置，以及利用用于感测和测量流体中选定物种的化学浓度的装置的方法。 器件可以包括金属氧化物半导体场效应晶体管（MOSFET）结构。
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公开(公告)号：US08148264B2
公开(公告)日：2012-04-03
申请号：US12711992
申请日：2010-02-24
CPC分类号： B81C1/00111 , B01J19/0046 , B01J2219/00504 , B01J2219/00664 , B81B1/006 , B81B2203/0361 , B81B2207/056 , B81C2201/0112 , B81C2201/0132 , B81C2201/0133 , B81C2201/0159 , G01N1/405 , H01L21/3065 , H01L21/30655 , H01L21/3081 , H01L21/3086 , Y10T436/25375
摘要： Methods for fabrication of high aspect ratio micropillars and nanopillars are described. Use of alumina as an etch mask for the fabrication methods is also described. The resulting micropillars and nanopillars are analyzed and a characterization of the etch mask is provided.
摘要翻译： 描述了用于制造高纵横比微柱和纳米柱的方法。 还描述了使用氧化铝作为制造方法的蚀刻掩模。 分析所得到的微柱和纳米柱，并提供蚀刻掩模的表征。
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4.发明授权Methods for fabricating passivated silicon nanowires and devices thus obtained 有权制备钝化硅纳米线的方法和由此获得的器件公开(公告)号：US08080468B2
公开(公告)日：2011-12-20
申请号：US12822109
申请日：2010-06-23
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y40/00 , H01L29/0676 , H01L29/413 , H01L29/66439 , H01L29/66666 , H01L29/775 , H01L29/7827 , H01L33/18 , Y10S977/762
摘要： Methods for fabricating passivated silicon nanowires and an electronic arrangement thus obtained are described. Such arrangements may comprise a metal-oxide-semiconductor (MOS) structure such that the arrangements may be utilized for MOS field-effect transistors (MOSFETs) or opto-electronic switches.
摘要翻译： 描述了制造钝化硅纳米线的方法和由此获得的电子布置。 这种布置可以包括金属氧化物半导体（MOS）结构，使得这些布置可以用于MOS场效应晶体管（MOSFET）或光电开关。
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公开(公告)号：US09018684B2
公开(公告)日：2015-04-28
申请号：US12952181
申请日：2010-11-22
IPC分类号： H01L29/772 , H01L29/02 , H01L29/06 , B82Y10/00 , H01L29/775 , G01N27/414 , B82Y15/00
CPC分类号： G01N27/4146 , B82Y10/00 , B82Y15/00 , H01L29/0676 , H01L29/66666 , H01L29/775
摘要： Methods for fabricating silicon nanowire chemical sensing devices, devices thus obtained, and methods for utilizing devices for sensing and measuring chemical concentration of selected species in a fluid are described. Devices may comprise a metal-oxide-semiconductor field-effect transistor (MOSFET) structure.
摘要翻译： 描述了制造硅纳米线化学感测装置的方法，如此获得的装置，以及利用用于感测和测量流体中选定物种的化学浓度的装置的方法。 器件可以包括金属氧化物半导体场效应晶体管（MOSFET）结构。
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公开(公告)号：US20110140085A1
公开(公告)日：2011-06-16
申请号：US12949758
申请日：2010-11-18
IPC分类号： H01L29/08 , H01L21/441 , H01L21/336 , B82Y99/00
CPC分类号： H01L31/035227 , B82Y10/00 , B82Y40/00 , H01L21/02381 , H01L21/0243 , H01L21/02521 , H01L21/0259 , H01L21/02639 , H01L29/0665 , H01L29/0676 , H01L29/127 , H01L29/267 , H01L29/413 , H01L29/66439 , H01L29/775 , H01L33/06 , Y10S977/762
摘要： Methods for fabricating self-aligned heterostructures and semiconductor arrangements using silicon nanowires are described.
摘要翻译： 描述了使用硅纳米线制造自对准异质结构和半导体布置的方法。
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7.发明申请公开(公告)号：US20110031470A1
公开(公告)日：2011-02-10
申请号：US12822109
申请日：2010-06-23
IPC分类号： H01L29/66 , H01L33/00 , H01L21/28 , H01L29/772 , H01L29/775 , B82Y40/00
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y40/00 , H01L29/0676 , H01L29/413 , H01L29/66439 , H01L29/66666 , H01L29/775 , H01L29/7827 , H01L33/18 , Y10S977/762
摘要： Methods for fabricating passivated silicon nanowires and an electronic arrangement thus obtained are described. Such arrangements may comprise a metal-oxide-semiconductor (MOS) structure such that the arrangements may be utilized for MOS field-effect transistors (MOSFETs) or opto-electronic switches.
摘要翻译： 描述了制造钝化硅纳米线的方法和由此获得的电子布置。 这种布置可以包括金属氧化物半导体（MOS）结构，使得这些布置可以用于MOS场效应晶体管（MOSFET）或光电开关。
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8.发明授权Methods for fabricating high aspect ratio probes and deforming high aspect ratio nanopillars and micropillars 有权制备高纵横比探针和变形高纵横比的纳米柱和微柱的方法公开(公告)号：US09005548B2
公开(公告)日：2015-04-14
申请号：US12712097
申请日：2010-02-24
IPC分类号： B01L3/00 , H01L21/308 , B81C1/00 , H01L21/3065
CPC分类号： B81C1/00111 , B01J19/0046 , B01J2219/00504 , B01J2219/00664 , B81B1/006 , B81B2203/0361 , B81B2207/056 , B81C2201/0112 , B81C2201/0132 , B81C2201/0133 , B81C2201/0159 , G01N1/405 , H01L21/3065 , H01L21/30655 , H01L21/3081 , H01L21/3086 , Y10T436/25375
摘要： Methods for fabricating of high aspect ratio probes and deforming micropillars and nanopillars are described. Use of polymers in deforming nanopillars and micropillars is also described.
摘要翻译： 描述了制造高纵横比探针和变形微柱和纳米柱的方法。 还描述了聚合物在变形纳米柱和微柱体中的使用。
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公开(公告)号：US08569741B2
公开(公告)日：2013-10-29
申请号：US13286008
申请日：2011-10-31
IPC分类号： H01L29/772 , B82Y99/00
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y40/00 , H01L29/0676 , H01L29/413 , H01L29/66439 , H01L29/66666 , H01L29/775 , H01L29/7827 , H01L33/18 , Y10S977/762
摘要： Methods for fabricating passivated silicon nanowires and an electronic arrangement thus obtained are described. Such arrangements may comprise a metal-oxide-semiconductor (MOS) structure such that the arrangements may be utilized for MOS field-effect transistors (MOSFETs) or opto-electronic switches.
摘要翻译： 描述了制造钝化硅纳米线的方法和由此获得的电子布置。 这种布置可以包括金属氧化物半导体（MOS）结构，使得这些布置可以用于MOS场效应晶体管（MOSFET）或光电开关。
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10.发明申请METHODS FOR FABRICATING HIGH ASPECT RATIO PROBES AND DEFORMING HIGH ASPECT RATIO NANOPILLARS AND MICROPILLARS 有权用于制备高倍率比例探针和改变高度比例的纳米颗粒和微孔的方法公开(公告)号：US20100215543A1
公开(公告)日：2010-08-26
申请号：US12712097
申请日：2010-02-24
CPC分类号： B81C1/00111 , B01J19/0046 , B01J2219/00504 , B01J2219/00664 , B81B1/006 , B81B2203/0361 , B81B2207/056 , B81C2201/0112 , B81C2201/0132 , B81C2201/0133 , B81C2201/0159 , G01N1/405 , H01L21/3065 , H01L21/30655 , H01L21/3081 , H01L21/3086 , Y10T436/25375
摘要： Methods for fabricating of high aspect ratio probes and deforming micropillars and nanopillars are described. Use of polymers in deforming nanopillars and micropillars is also described.
摘要翻译： 描述了制造高纵横比探针和变形微柱和纳米柱的方法。 还描述了聚合物在变形纳米柱和微柱体中的使用。
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