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    SEMICONDUCTOR DEVICES INCLUDING BACK-SIDE INTEGRATED CIRCUITRY
    1.
    发明申请
    SEMICONDUCTOR DEVICES INCLUDING BACK-SIDE INTEGRATED CIRCUITRY 有权
    包括背面集成电路的半导体器件

    公开(公告)号：US20170040375A1

    公开(公告)日：2017-02-09

    申请号：US15299103

    申请日：2016-10-20

    Applicant: Micron Technology, Inc.

    Inventor： Kyle K. Kirby ,  Steve Oliver

    IPC: H01L27/146

    CPC classification number: H01L27/14636 ,  H01L21/76898 ,  H01L27/14612 ,  H01L27/14625 ,  H01L27/14632 ,  H01L27/14643

    Abstract: Semiconductor devices may include a semiconductor substrate comprising at least one of transistors and capacitors may be located at an active surface of the semiconductor substrate. An imperforate dielectric material may be located on the active surface, the imperforate dielectric material covering the at least one of transistors and the capacitors. Electrically conductive material in contact openings may be electrically connected to the at least one of transistors and capacitors and extend to a back side surface of the semiconductor substrate. Laterally extending conductive elements may extend over the back side surface of the semiconductor substrate and may be electrically connected to the conductive material in the contact openings. At least one laterally extending conductive element may be electrically connected to a first transistor or capacitor and may extend laterally underneath a second, different transistor or capacitor to which the laterally extending conductive element is not electrically connected.

    Abstract translation: 半导体器件可以包括包括晶体管中的至少一个的半导体衬底，并且电容器可以位于半导体衬底的有源表面。 无孔介电材料可以位于有源表面上，无孔介电材料覆盖晶体管和电容器中的至少一个。 接触开口中的导电材料可以电连接到晶体管和电容器中的至少一个并且延伸到半导体衬底的背侧表面。 横向延伸的导电元件可以在半导体衬底的背侧表面上延伸并且可以与接触开口中的导电材料电连接。 至少一个横向延伸的导电元件可以电连接到第一晶体管或电容器，并且可以在横向延伸的导电元件未电连接的第二不同的晶体管或电容器的下方横向延伸。

    SEMICONDUCTOR DEVICES INCLUDING BACK-SIDE INTEGRATED CIRCUITRY
    2.
    发明申请
    SEMICONDUCTOR DEVICES INCLUDING BACK-SIDE INTEGRATED CIRCUITRY 有权
    包括背面集成电路的半导体器件

    公开(公告)号：US20140191303A1

    公开(公告)日：2014-07-10

    申请号：US14207972

    申请日：2014-03-13

    Applicant: Micron Technology, Inc.

    Inventor： Kyle K. Kirby ,  Steve Oliver

    IPC: H01L27/146

    CPC classification number: H01L27/14636 ,  H01L21/76898 ,  H01L27/14612 ,  H01L27/14625 ,  H01L27/14632 ,  H01L27/14643

    Abstract: Semiconductor devices may include a semiconductor substrate comprising at least one of transistors and capacitors may be located at an active surface of the semiconductor substrate. An imperforate dielectric material may be located on the active surface, the imperforate dielectric material covering the at least one of transistors and the capacitors. Electrically conductive material in contact openings may be electrically connected to the at least one of transistors and capacitors and extend to a back side surface of the semiconductor substrate. Laterally extending conductive elements may extend over the back side surface of the semiconductor substrate and may be electrically connected to the conductive material in the contact openings. At least one laterally extending conductive element may be electrically connected to a first transistor or capacitor and may extend laterally underneath a second, different transistor or capacitor to which the laterally extending conductive element is not electrically connected.

    Abstract translation: 半导体器件可以包括包括晶体管中的至少一个的半导体衬底，并且电容器可以位于半导体衬底的有源表面。 无孔介电材料可以位于有源表面上，无孔介电材料覆盖晶体管和电容器中的至少一个。 接触开口中的导电材料可以电连接到晶体管和电容器中的至少一个并且延伸到半导体衬底的背侧表面。 横向延伸的导电元件可以在半导体衬底的背侧表面上延伸并且可以与接触开口中的导电材料电连接。 至少一个横向延伸的导电元件可以电连接到第一晶体管或电容器，并且可以在横向延伸的导电元件未电连接的第二不同的晶体管或电容器的下方横向延伸。

    Semiconductor devices including back-side integrated circuitry
    4.
    发明授权
    Semiconductor devices including back-side integrated circuitry 有权

    公开(公告)号：US09966406B2

    公开(公告)日：2018-05-08

    申请号：US15299103

    申请日：2016-10-20

    Applicant: Micron Technology, Inc.

    Inventor： Kyle K. Kirby ,  Steve Oliver

    IPC: H01L31/062 ,  H01L27/146

    CPC classification number: H01L27/14636 ,  H01L21/76898 ,  H01L27/14612 ,  H01L27/14625 ,  H01L27/14632 ,  H01L27/14643

    Abstract: Semiconductor devices may include a semiconductor substrate comprising at least one of transistors and capacitors may be located at an active surface of the semiconductor substrate. An imperforate dielectric material may be located on the active surface, the imperforate dielectric material covering the at least one of transistors and the capacitors. Electrically conductive material in contact openings may be electrically connected to the at least one of transistors and capacitors and extend to a back side surface of the semiconductor substrate. Laterally extending conductive elements may extend over the back side surface of the semiconductor substrate and may be electrically connected to the conductive material in the contact openings. At least one laterally extending conductive element may be electrically connected to a first transistor or capacitor and may extend laterally underneath a second, different transistor or capacitor to which the laterally extending conductive element is not electrically connected.

    Semiconductor devices including back-side integrated circuitry
    5.
    发明授权
    Semiconductor devices including back-side integrated circuitry 有权
    半导体器件包括背面集成电路

    公开(公告)号：US09484378B2

    公开(公告)日：2016-11-01

    申请号：US14207972

    申请日：2014-03-13

    Applicant: Micron Technology, Inc.

    Inventor： Kyle K. Kirby ,  Steve Oliver

    IPC: H01L31/062 ,  H01L27/146

    CPC classification number: H01L27/14636 ,  H01L21/76898 ,  H01L27/14612 ,  H01L27/14625 ,  H01L27/14632 ,  H01L27/14643

    Abstract: Semiconductor devices may include a semiconductor substrate comprising at least one of transistors and capacitors may be located at an active surface of the semiconductor substrate. An imperforate dielectric material may be located on the active surface, the imperforate dielectric material covering the at least one of transistors and the capacitors. Electrically conductive material in contact openings may be electrically connected to the at least one of transistors and capacitors and extend to a back side surface of the semiconductor substrate. Laterally extending conductive elements may extend over the back side surface of the semiconductor substrate and may be electrically connected to the conductive material in the contact openings. At least one laterally extending conductive element may be electrically connected to a first transistor or capacitor and may extend laterally underneath a second, different transistor or capacitor to which the laterally extending conductive element is not electrically connected.

    Abstract translation: 半导体器件可以包括包括晶体管中的至少一个的半导体衬底，并且电容器可以位于半导体衬底的有源表面。 无孔介电材料可以位于有源表面上，无孔介电材料覆盖晶体管和电容器中的至少一个。 接触开口中的导电材料可以电连接到晶体管和电容器中的至少一个并且延伸到半导体衬底的背侧表面。 横向延伸的导电元件可以在半导体衬底的背侧表面上延伸并且可以与接触开口中的导电材料电连接。 至少一个横向延伸的导电元件可以电连接到第一晶体管或电容器，并且可以在横向延伸的导电元件未电连接的第二不同的晶体管或电容器的下方横向延伸。

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