公开(公告)号：US07091120B2

公开(公告)日：2006-08-15

申请号：US10910800

申请日：2004-08-04

申请人： Mihai Buretea ,  Jian Chen ,  Calvin Chow ,  Chunming Niu ,  Yaoling Pan ,  J. Wallace Parce ,  Linda T. Romano ,  David Stumbo

发明人： Mihai Buretea ,  Jian Chen ,  Calvin Chow ,  Chunming Niu ,  Yaoling Pan ,  J. Wallace Parce ,  Linda T. Romano ,  David Stumbo

IPC分类号： H01L21/28 ,  H01L21/3205

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/78681 ,  H01L29/78696 ,  H01L33/06 ,  H01L33/24 ,  H01L51/0048 ,  H01L51/0545 ,  H01L2924/0002 ,  Y10T428/2913 ,  H01L2924/00

摘要： The present invention relates to a system and process for producing a nanowire-material composite. A substrate having nanowires attached to a portion of at least one surface is provided. A material is deposited over the portion to form the nanowire-material composite. The process further optionally includes separating the nanowire-material composite from the substrate to form a freestanding nanowire-material composite. The freestanding nanowire material composite is optionally further processed into an electronic substrate. A variety of electronic substrates can be produced using the methods described herein. For example, a multi-color light-emitting diode can be produced from multiple, stacked layers of nanowire-material composites, each composite layer emitting light at a different wavelength.

摘要翻译： 本发明涉及纳米线材料复合体的制造方法和制造方法。 提供了具有连接到至少一个表面的一部分的纳米线的衬底。 在该部分上沉积材料以形成纳米线材料复合材料。 该方法进一步可选地包括从衬底分离纳米线材料复合物以形成独立的纳米线材料复合材料。 独立的纳米线材料复合材料任选进一步加工成电子基片。 可以使用本文所述的方法来生产各种电子基板。 例如，多个发光二极管可以由多个层叠的纳米线材料复合体制成，每个复合层发射不同波长的光。

公开(公告)号：US20100323500A1

公开(公告)日：2010-12-23

申请号：US12854323

申请日：2010-08-11

申请人： Mihai Buretea ,  Jian Chen ,  Calvin Chow ,  Chunming Niu ,  Yaoling Pan ,  J. Wallace Parce ,  Linda T. Romano ,  David Stumbo

发明人： Mihai Buretea ,  Jian Chen ,  Calvin Chow ,  Chunming Niu ,  Yaoling Pan ,  J. Wallace Parce ,  Linda T. Romano ,  David Stumbo

IPC分类号： H01L21/20

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/78681 ,  H01L29/78696 ,  H01L33/06 ,  H01L33/24 ,  H01L51/0048 ,  H01L51/0545 ,  H01L2924/0002 ,  Y10T428/2913 ,  H01L2924/00

摘要： The present invention relates to a system and process for producing a nanowire-material composite. A substrate having nanowires attached to a portion of at least one surface is provided. A material is deposited over the portion to form the nanowire-material composite. The process further optionally includes separating the nanowire-material composite from the substrate to form a freestanding nanowire-material composite. The freestanding nanowire material composite is optionally further processed into a electronic substrate. A variety of electronic substrates can be produced using the methods described herein. For example, a multi-color light-emitting diode can be produced from multiple, stacked layers of nanowire-material composites, each composite layer emitting light at a different wavelength.

摘要翻译： 本发明涉及纳米线材料复合体的制造方法和制造方法。 提供了具有连接到至少一个表面的一部分的纳米线的衬底。 在该部分上沉积材料以形成纳米线材料复合材料。 该方法进一步可选地包括从衬底分离纳米线材料复合物以形成独立的纳米线材料复合材料。 独立的纳米线材料复合材料任选进一步加工成电子基片。 可以使用本文所述的方法来生产各种电子基板。 例如，多个发光二极管可以由多个层叠的纳米线材料复合体制成，每个复合层发射不同波长的光。

公开(公告)号：US20090075468A1

公开(公告)日：2009-03-19

申请号：US12274904

申请日：2008-11-20

申请人： Mihai Buretea ,  Jian Chen ,  Calvin Chow ,  Chunming Niu ,  Yaoling Pan ,  J. Wallace Parce ,  Linda T. Romano ,  David Stumbo

发明人： Mihai Buretea ,  Jian Chen ,  Calvin Chow ,  Chunming Niu ,  Yaoling Pan ,  J. Wallace Parce ,  Linda T. Romano ,  David Stumbo

IPC分类号： H01L21/28

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/78681 ,  H01L29/78696 ,  H01L33/06 ,  H01L33/24 ,  H01L51/0048 ,  H01L51/0545 ,  H01L2924/0002 ,  Y10T428/2913 ,  H01L2924/00

摘要： The present invention relates to a system and process for producing a nanowire-material composite. A substrate having nanowires attached to a portion of at least one surface is provided. A material is deposited over the portion to form the nanowire-material composite. The process further optionally includes separating the nanowire-material composite from the substrate to form a freestanding nanowire-material composite. The freestanding nanowire material composite is optionally further processed into a electronic substrate. A variety of electronic substrates can be produced using the methods described herein. For example, a multi-color light-emitting diode can be produced from multiple, stacked layers of nanowire-material composites, each composite layer emitting light at a different wavelength.

摘要翻译： 本发明涉及纳米线材料复合体的制造方法和制造方法。 提供了具有连接到至少一个表面的一部分的纳米线的衬底。 在该部分上沉积材料以形成纳米线材料复合材料。 该方法进一步可选地包括从衬底分离纳米线材料复合物以形成独立的纳米线材料复合材料。 独立的纳米线材料复合材料任选进一步加工成电子基片。 可以使用本文所述的方法来生产各种电子基板。 例如，多个发光二极管可以由多个层叠的纳米线材料复合体制成，每个复合层发射不同波长的光。

公开(公告)号：US07468315B2

公开(公告)日：2008-12-23

申请号：US11225951

申请日：2005-09-14

申请人： Mihai A. Buretea ,  Jian Chen ,  Calvin Y. H. Chow ,  Chunming Niu ,  Yaoling Pan ,  J. Wallace Parce ,  Linda T. Romano ,  David P. Stumbo

发明人： Mihai A. Buretea ,  Jian Chen ,  Calvin Y. H. Chow ,  Chunming Niu ,  Yaoling Pan ,  J. Wallace Parce ,  Linda T. Romano ,  David P. Stumbo

IPC分类号： H01L21/28 ,  H01L21/3205

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/78681 ,  H01L29/78696 ,  H01L33/06 ,  H01L33/24 ,  H01L51/0048 ,  H01L51/0545 ,  H01L2924/0002 ,  Y10T428/2913 ,  H01L2924/00

摘要： The present invention relates to a system and process for producing a nanowire-material composite. A substrate having nanowires attached to a portion of at least one surface is provided. A material is deposited over the portion to form the nanowire-material composite. The process further optionally includes separating the nanowire-material composite from the substrate to form a freestanding nanowire-material composite. The freestanding nanowire material composite is optionally further processed into an electronic substrate. A variety of electronic substrates can be produced using the methods described herein. For example, a multi-color light-emitting diode can be produced from multiple, stacked layers of nanowire-material composites, each composite layer emitting light at a different wavelength.

摘要翻译： 本发明涉及纳米线材料复合体的制造方法和制造方法。 提供了具有连接到至少一个表面的一部分的纳米线的衬底。 在该部分上沉积材料以形成纳米线材料复合材料。 该方法进一步可选地包括从衬底分离纳米线材料复合物以形成独立的纳米线材料复合材料。 独立的纳米线材料复合材料任选进一步加工成电子基片。 可以使用本文所述的方法来生产各种电子基板。 例如，多个发光二极管可以由多个层叠的纳米线材料复合体制成，每个复合层发射不同波长的光。

公开(公告)号：US07795125B2

公开(公告)日：2010-09-14

申请号：US12274904

申请日：2008-11-20

申请人： Mihai A. Buretea ,  Jian Chen ,  Calvin Y. H. Chow ,  Chunming Niu ,  Yaoling Pan ,  J. Wallace Parce ,  Linda T. Romano ,  David P. Stumbo

发明人： Mihai A. Buretea ,  Jian Chen ,  Calvin Y. H. Chow ,  Chunming Niu ,  Yaoling Pan ,  J. Wallace Parce ,  Linda T. Romano ,  David P. Stumbo

IPC分类号： H01L21/28 ,  H01L21/3205

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/78681 ,  H01L29/78696 ,  H01L33/06 ,  H01L33/24 ,  H01L51/0048 ,  H01L51/0545 ,  H01L2924/0002 ,  Y10T428/2913 ,  H01L2924/00

摘要： The present invention relates to a system and process for producing a nanowire-material composite. A substrate having nanowires attached to a portion of at least one surface is provided. A material is deposited over the portion to form the nanowire-material composite. The process further optionally includes separating the nanowire-material composite from the substrate to form a freestanding nanowire-material composite. The freestanding nanowire material composite is optionally further processed into a electronic substrate. A variety of electronic substrates can be produced using the methods described herein. For example, a multi-color light-emitting diode can be produced from multiple, stacked layers of nanowire-material composites, each composite layer emitting light at a different wavelength.

摘要翻译： 本发明涉及纳米线材料复合体的制造方法和制造方法。 提供了具有连接到至少一个表面的一部分的纳米线的衬底。 在该部分上沉积材料以形成纳米线材料复合材料。 该方法进一步可选地包括从衬底分离纳米线材料复合物以形成独立的纳米线材料复合材料。 独立的纳米线材料复合材料任选进一步加工成电子基片。 可以使用本文所述的方法来生产各种电子基板。 例如，多个发光二极管可以由多个层叠的纳米线材料复合体制成，每个复合层发射不同波长的光。

公开(公告)号：US20100155696A1

公开(公告)日：2010-06-24

申请号：US11681058

申请日：2007-03-01

申请人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda T. Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David Stumbo ,  J. Wallace Parce ,  Jay L. Goldman

发明人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda T. Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David Stumbo ,  J. Wallace Parce ,  Jay L. Goldman

IPC分类号： H01L29/66 ,  H01L21/20

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01F1/405 ,  H01L27/092 ,  H01L27/12 ,  H01L27/1292 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78696 ,  H01L31/035281 ,  H01L33/18 ,  H01L33/20 ,  H01L33/24 ,  H01L51/0048 ,  H01L51/0504 ,  H01L51/0545 ,  H01L51/0595 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/781 ,  Y10S977/789 ,  Y10S977/938

摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

摘要翻译： 描述了具有多个半导体器件的电子基片的方法和装置。 在衬底上形成纳米线薄膜。 纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。 在纳米线的薄膜中限定多个半导体区域。 在半导体器件区域处形成触点，从而提供与多个半导体器件的电连接。 此外，用于制造纳米线的各种材料，包括p掺杂纳米线和n掺杂纳米线的薄膜，纳米线异质结构，发光纳米线异质结构，用于在衬底上定位纳米线的流动掩模，用于沉积纳米线的纳米线喷涂技术，用于减少或消除声子的技术 描述了纳米线中的电子散射，以及用于降低纳米线中的表面状态的技术。

公开(公告)号：US07067867B2

公开(公告)日：2006-06-27

申请号：US10674060

申请日：2003-09-30

申请人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda T. Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David Stumbo ,  J. Wallace Parce ,  Jay L. Goldman

发明人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda T. Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David Stumbo ,  J. Wallace Parce ,  Jay L. Goldman

IPC分类号： H01L27/108 ,  H01L29/94 ,  H01L29/76 ,  H01L21/336 ,  H01L21/8234

CPC分类号： H01L29/78696 ,  B82Y10/00 ,  G11C13/025 ,  G11C2213/17 ,  G11C2213/18 ,  H01L24/95 ,  H01L27/1292 ,  H01L29/04 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78684 ,  H01L29/7869 ,  H01L33/20 ,  H01L51/0048 ,  H01L51/0052 ,  H01L51/0541 ,  H01L51/0545 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00

摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

摘要翻译： 描述了具有多个半导体器件的电子基片的方法和装置。 在衬底上形成纳米线薄膜。 纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。 在纳米线的薄膜中限定多个半导体区域。 在半导体器件区域处形成触点，从而提供与多个半导体器件的电连接。 此外，用于制造纳米线的各种材料，包括p掺杂纳米线和n掺杂纳米线的薄膜，纳米线异质结构，发光纳米线异质结构，用于在衬底上定位纳米线的流动掩模，用于沉积纳米线的纳米线喷涂技术，用于减少或消除声子的技术 描述了纳米线中的电子散射，以及用于降低纳米线中的表面状态的技术。

公开(公告)号：US07932511B2

公开(公告)日：2011-04-26

申请号：US11681058

申请日：2007-03-01

申请人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda T. Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David Stumbo ,  J. Wallace Parce ,  Jay L. Goldman

发明人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda T. Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David Stumbo ,  J. Wallace Parce ,  Jay L. Goldman

IPC分类号： H01L29/06

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01F1/405 ,  H01L27/092 ,  H01L27/12 ,  H01L27/1292 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78696 ,  H01L31/035281 ,  H01L33/18 ,  H01L33/20 ,  H01L33/24 ,  H01L51/0048 ,  H01L51/0504 ,  H01L51/0545 ,  H01L51/0595 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/781 ,  Y10S977/789 ,  Y10S977/938

摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

摘要翻译： 描述了具有多个半导体器件的电子基片的方法和装置。 在衬底上形成纳米线薄膜。 纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。 在纳米线的薄膜中限定多个半导体区域。 在半导体器件区域处形成触点，从而提供与多个半导体器件的电连接。 此外，用于制造纳米线的各种材料，包括p掺杂纳米线和n掺杂纳米线的薄膜，纳米线异质结构，发光纳米线异质结构，用于在衬底上定位纳米线的流动掩模，用于沉积纳米线的纳米线喷涂技术，用于减少或消除声子的技术 描述了纳米线中的电子散射，以及用于降低纳米线中的表面状态的技术。

公开(公告)号：US07851841B2

公开(公告)日：2010-12-14

申请号：US11760382

申请日：2007-06-08

申请人： Xiangfeng Duan ,  Chunming Niu ,  Stephen A. Empedocles ,  Linda T. Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David P. Stumbo ,  J. Wallace Parce ,  Jay L. Goldman

发明人： Xiangfeng Duan ,  Chunming Niu ,  Stephen A. Empedocles ,  Linda T. Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David P. Stumbo ,  J. Wallace Parce ,  Jay L. Goldman

IPC分类号： H01L27/108 ,  H01L29/94

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01F1/405 ,  H01L27/092 ,  H01L27/12 ,  H01L27/1292 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78696 ,  H01L31/035281 ,  H01L33/18 ,  H01L33/20 ,  H01L33/24 ,  H01L51/0048 ,  H01L51/0504 ,  H01L51/0545 ,  H01L51/0595 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/781 ,  Y10S977/789 ,  Y10S977/938

摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

摘要翻译： 描述了具有多个半导体器件的电子基片的方法和装置。 在衬底上形成纳米线薄膜。 纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。 在纳米线的薄膜中限定多个半导体区域。 在半导体器件区域处形成触点，从而提供与多个半导体器件的电连接。 此外，用于制造纳米线的各种材料，包括p掺杂纳米线和n掺杂纳米线的薄膜，纳米线异质结构，发光纳米线异质结构，用于在衬底上定位纳米线的流动掩模，用于沉积纳米线的纳米线喷涂技术，用于减少或消除声子的技术 描述了纳米线中的电子散射，以及用于降低纳米线中的表面状态的技术。

公开(公告)号：US07064372B2

公开(公告)日：2006-06-20

申请号：US11004380

申请日：2004-12-03

申请人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda T. Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence A. Bock ,  David P. Stumbo ,  J. Wallace Parce ,  Jay L. Goldman

发明人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda T. Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence A. Bock ,  David P. Stumbo ,  J. Wallace Parce ,  Jay L. Goldman

IPC分类号： H01L27/108 ,  H01L29/94 ,  H01L29/76

CPC分类号： H01L29/78696 ,  B82Y10/00 ,  G11C13/025 ,  G11C2213/17 ,  G11C2213/18 ,  H01L24/95 ,  H01L27/1292 ,  H01L29/04 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78684 ,  H01L29/7869 ,  H01L33/20 ,  H01L51/0048 ,  H01L51/0052 ,  H01L51/0541 ,  H01L51/0545 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00

摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.