公开(公告)号：US20160293798A1

公开(公告)日：2016-10-06

申请号：US15183594

申请日：2016-06-15

申请人： Mingwei Zhu ,  Rongjun Wang ,  Nag B. Patibandla ,  Xianmin Tang ,  Vivek Agrawal ,  Cheng-Hsiung Tsai ,  Muhammad Rasheed ,  Dinesh Saigal ,  Praburam Gopal Raja ,  Omkaram Nalamasu ,  Anantha Subramani

发明人： Mingwei Zhu ,  Rongjun Wang ,  Nag B. Patibandla ,  Xianmin Tang ,  Vivek Agrawal ,  Cheng-Hsiung Tsai ,  Muhammad Rasheed ,  Dinesh Saigal ,  Praburam Gopal Raja ,  Omkaram Nalamasu ,  Anantha Subramani

IPC分类号： H01L33/12 ,  H01L33/32 ,  H01L33/00 ,  H01L33/06

CPC分类号： H01L33/12 ,  C30B23/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02661 ,  H01L29/205 ,  H01L33/007 ,  H01L33/06 ,  H01L33/32

摘要： Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.

公开(公告)号：US20130285065A1

公开(公告)日：2013-10-31

申请号：US13868385

申请日：2013-04-23

申请人： Mingwei Zhu ,  Rongjun Wang ,  Nag B. Patibandla ,  Xianmin Tang ,  Vivek Agrawal ,  Cheng-Hsiung Tsai ,  Muhammad Rasheed ,  Dinesh Saigal ,  Praburam Gopal Raja ,  Omkaram Nalamasu ,  Anantha Subramani

发明人： Mingwei Zhu ,  Rongjun Wang ,  Nag B. Patibandla ,  Xianmin Tang ,  Vivek Agrawal ,  Cheng-Hsiung Tsai ,  Muhammad Rasheed ,  Dinesh Saigal ,  Praburam Gopal Raja ,  Omkaram Nalamasu ,  Anantha Subramani

IPC分类号： H01L21/02 ,  H01L29/205

CPC分类号： H01L33/12 ,  C30B23/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02661 ,  H01L29/205 ,  H01L33/007 ,  H01L33/06 ,  H01L33/32

摘要： Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.

摘要翻译： 描述了具有物理气相沉积（PVD）形成的氮化铝缓冲层的氮化镓基光器件的制造。 还描述了PVD AlN缓冲层的工艺条件。 还描述了PVD氮化铝缓冲层的基板预处理。 在一个实例中，在衬底上制造缓冲层的方法包括预处理衬底的表面。 该方法还涉及从容纳在具有氮基气体或等离子体的物理气相沉积（PVD）室中的含铝靶反应溅射基板表面上的氮化铝（AlN）层。

公开(公告)号：US09396933B2

公开(公告)日：2016-07-19

申请号：US13868385

申请日：2013-04-23

申请人： Mingwei Zhu ,  Rongjun Wang ,  Nag B. Patibandia ,  Xianmin Tang ,  Vivek Agrawal ,  Cheng-Hsiung Tsai ,  Muhammad Rasheed ,  Dinesh Saigal ,  Praburam Gopal Raja ,  Omkaram Nalamasu ,  Anantha Subramani

发明人： Mingwei Zhu ,  Rongjun Wang ,  Nag B. Patibandia ,  Xianmin Tang ,  Vivek Agrawal ,  Cheng-Hsiung Tsai ,  Muhammad Rasheed ,  Dinesh Saigal ,  Praburam Gopal Raja ,  Omkaram Nalamasu ,  Anantha Subramani

IPC分类号： H01L21/02 ,  H01L29/205 ,  H01L33/00 ,  C30B23/02 ,  C30B29/40 ,  H01L33/12

CPC分类号： H01L33/12 ,  C30B23/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02661 ,  H01L29/205 ,  H01L33/007 ,  H01L33/06 ,  H01L33/32

摘要： Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.

摘要翻译： 描述了具有物理气相沉积（PVD）形成的氮化铝缓冲层的氮化镓基光器件的制造。 还描述了PVD AlN缓冲层的工艺条件。 还描述了PVD氮化铝缓冲层的基板预处理。 在一个实例中，在衬底上制造缓冲层的方法包括预处理衬底的表面。 该方法还涉及从容纳在具有氮基气体或等离子体的物理气相沉积（PVD）室中的含铝靶反应溅射基板表面上的氮化铝（AlN）层。

公开(公告)号：US20160035937A1

公开(公告)日：2016-02-04

申请号：US14884251

申请日：2015-10-15

申请人： Mingwei Zhu ,  Nag B. Patibandla ,  Rongjun Wang ,  Daniel Lee Diehl ,  Vivek Agrawal ,  Anantha Subramani

发明人： Mingwei Zhu ,  Nag B. Patibandla ,  Rongjun Wang ,  Daniel Lee Diehl ,  Vivek Agrawal ,  Anantha Subramani

IPC分类号： H01L33/12 ,  H01L29/20 ,  H01L33/00 ,  H01L31/18

CPC分类号： H01L33/12 ,  H01J37/32467 ,  H01J37/32724 ,  H01J37/3405 ,  H01J37/347 ,  H01L29/2003 ,  H01L31/1856 ,  H01L33/007 ,  H01L33/0075 ,  Y02E10/544

摘要： Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.

摘要翻译： 描述了用于GaN基光电子和电子器件的氧控PVD PVD缓冲器。 还描述了以氧控制方式形成GaN基光电子和电子器件的PVD AlN缓冲液的方法。 在一个示例中，形成用于GaN基光电子或电子器件的氮化铝（AlN）缓冲层的方法包括在衬底上方的AlN层的反应溅射，所述反应性溅射涉及使物理气相沉积 （PVD）室，其含有含氮气体或基于含氮气体的等离子体。 该方法还包括将氧气掺入到AlN层中。

公开(公告)号：US20140264363A1

公开(公告)日：2014-09-18

申请号：US13947857

申请日：2013-07-22

申请人： Mingwei Zhu ,  Nag B. Patibandla ,  Rongjun Wang ,  Daniel Lee Diehl ,  Vivek Agrawal ,  Anantha Subramani

发明人： Mingwei Zhu ,  Nag B. Patibandla ,  Rongjun Wang ,  Daniel Lee Diehl ,  Vivek Agrawal ,  Anantha Subramani

IPC分类号： H01L33/00 ,  H01L31/18 ,  H01J37/34 ,  H01L29/20

CPC分类号： H01L33/12 ,  H01J37/32467 ,  H01J37/32724 ,  H01J37/3405 ,  H01J37/347 ,  H01L29/2003 ,  H01L31/1856 ,  H01L33/007 ,  H01L33/0075 ,  Y02E10/544

摘要： Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.

摘要翻译： 描述了用于GaN基光电子和电子器件的氧控PVD PVD缓冲器。 还描述了以氧控制方式形成GaN基光电子和电子器件的PVD AlN缓冲液的方法。 在一个示例中，形成用于GaN基光电子或电子器件的氮化铝（AlN）缓冲层的方法包括在衬底上方的AlN层的反应溅射，所述反应性溅射涉及使物理气相沉积 （PVD）室，其含有含氮气体或基于含氮气体的等离子体。 该方法还包括将氧气掺入到AlN层中。

公开(公告)号：US08409895B2

公开(公告)日：2013-04-02

申请号：US13036273

申请日：2011-02-28

申请人： Mingwei Zhu ,  Vivek Agrawal ,  Nag B. Patibandla ,  Omkaram Nalamasu

发明人： Mingwei Zhu ,  Vivek Agrawal ,  Nag B. Patibandla ,  Omkaram Nalamasu

IPC分类号： H01L33/005

CPC分类号： H01L21/0254 ,  C23C14/0641 ,  C23C14/568 ,  C23C16/34 ,  C23C28/04 ,  C23C28/044 ,  C30B23/02 ,  C30B25/08 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007 ,  H01L33/0095

摘要： Fabrication of gallium nitride-based light emitting diodes (LEDs) with physical vapor deposition (PVD) formed aluminum nitride buffer layers is described.

摘要翻译： 描述了具有形成氮化铝缓冲层的物理气相沉积（PVD）的氮化镓基发光二极管（LED）的制造。

公开(公告)号：US20120156819A1

公开(公告)日：2012-06-21

申请号：US13036273

申请日：2011-02-28

申请人： Mingwei Zhu ,  Vivek Agrawal ,  Nag B. Patibandla ,  Omkaram Nalamasu

发明人： Mingwei Zhu ,  Vivek Agrawal ,  Nag B. Patibandla ,  Omkaram Nalamasu

IPC分类号： H01L33/06 ,  H01L21/203 ,  C23C16/56 ,  C30B25/08 ,  C23C16/34 ,  C23C16/44

CPC分类号： H01L21/0254 ,  C23C14/0641 ,  C23C14/568 ,  C23C16/34 ,  C23C28/04 ,  C23C28/044 ,  C30B23/02 ,  C30B25/08 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007 ,  H01L33/0095

摘要： Fabrication of gallium nitride-based light emitting diodes (LEDs) with physical vapor deposition (PVD) formed aluminum nitride buffer layers is described.

摘要翻译： 描述了具有形成氮化铝缓冲层的物理气相沉积（PVD）的氮化镓基发光二极管（LED）的制造。

公开(公告)号：US20130174781A1

公开(公告)日：2013-07-11

申请号：US13782935

申请日：2013-03-01

申请人： Mingwei Zhu ,  Vivek Agrawal ,  Nag B. Patibandla ,  Omkaram Nalamasu

发明人： Mingwei Zhu ,  Vivek Agrawal ,  Nag B. Patibandla ,  Omkaram Nalamasu

IPC分类号： H01L21/02

CPC分类号： H01L21/0254 ,  C23C14/0641 ,  C23C14/568 ,  C23C16/34 ,  C23C28/04 ,  C23C28/044 ,  C30B23/02 ,  C30B25/08 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007 ,  H01L33/0095

摘要： Fabrication of gallium nitride-based light emitting diodes (LEDs) with physical vapor deposition (PVD) formed aluminum nitride buffer layers is described.

摘要翻译： 描述了具有形成氮化铝缓冲层的物理气相沉积（PVD）的氮化镓基发光二极管（LED）的制造。

公开(公告)号：US20150258415A1

公开(公告)日：2015-09-17

申请号：US14214065

申请日：2014-03-14

申请人： Mehul Trivedi ,  Jonathan Todd Witort ,  Vivek Agrawal ,  Austin Soldner

发明人： Mehul Trivedi ,  Jonathan Todd Witort ,  Vivek Agrawal ,  Austin Soldner

IPC分类号： A63B71/06

CPC分类号： H04M1/72522 ,  A61B5/11 ,  A61B5/4866 ,  A61B5/7405 ,  G09B19/0038 ,  H04M2250/12

摘要： Techniques for providing physiological rate coaching by modifying media content based on sensor data are described. Disclosed are techniques for receiving data representing a target physiological rate, selecting a subset of files having data representing media contents to be presented based on the target physiological rate, processing sensor data received from one or more sensors to determine a difference from the target physiological rate, and modifying a presentation of the subset of files based on the difference. In some examples, the rate of presentation is modified. In some examples, the presentation sequence is modified. In some examples, a fading in of one media content and a fading out of another media content may be presented.

摘要翻译： 描述了通过基于传感器数据修改媒体内容来提供生理速率辅导的技术。 公开了用于接收表示目标生理速率的数据的技术，基于目标生理速率选择具有表示要呈现的媒体内容的数据的文件的子集，处理从一个或多个传感器接收的传感器数据，以确定与目标生理速率的差异 并且基于该差异来修改文件子集的呈现。 在一些例子中，演示速度被修改。 在一些示例中，演示序列被修改。 在一些示例中，可以呈现一个媒体内容的衰落和另一个媒体内容的衰落。

公开(公告)号：US06618518B1

公开(公告)日：2003-09-09

申请号：US09721415

申请日：2000-11-22

申请人： Ramaswamy Mahadevan ,  Vivek Agrawal

发明人： Ramaswamy Mahadevan ,  Vivek Agrawal

IPC分类号： G02B626

CPC分类号： G02B6/357 ,  G02B6/3518 ,  G02B6/3542 ,  G02B6/3546 ,  G02B6/358 ,  G02B6/3584 ,  H04Q11/0005 ,  H04Q2011/0024 ,  H04Q2011/003 ,  H04Q2011/0039 ,  H04Q2011/0058

摘要： Optical cross-connect switches include input optical paths, output optical paths, and an array of electromechanical optical switches such as movable reflectors that are arranged in rows of the electromechanical optical switches and columns of the electromechanical optical switches, and that selectively move to couple the input optical paths to the output optical paths. Row address lines also are provided, a respective one of which is electromagnetically (i.e. electrically and/or optically) coupled to a respective row of the electromechanical optical switches. Column address lines also are provided, a respective one of which is electromagnetically coupled to a respective column of the electromechanical optical switches. If there are n2 electromechanical optical switches that couple n optical paths to n optical output paths, less than n2 row and column address lines may be provided. Preferably, 2n row and column address lines may be provided. The electromechanical optical switches may be configured upon selection of the respective row address line and column address line, but not selected upon selection of neither or only one of the respective row address line and column address line. Alternatively, the electromechanical optical switches may be configured to be selected except for an electromechanical optical switch that is electromagnetically coupled to the respective row address line and column address line.

摘要翻译： 光学交叉连接开关包括输入光路，输出光路，以及诸如可移动反射器的机电光学开关的阵列，其被布置成机电光开关的列和机电光开关的列，并且选择性地移动以耦合 输入光路到输出光路。 还提供了行地址线，其相应的一个电磁（即电和/或光）耦合到机电光开关的相应行。 还提供列地址线，其相应的一个电磁耦合到机电光开关的相应列。 如果存在将n个光路耦合到n个光输出路径的n2个机电光开关，则可以提供少于n2行和列地址线。 优选地，可以提供2n行和列地址行。 可以在选择相应的行地址线和列地址线之后配置机电光学开关，但是在选择相应的行地址线和列地址线中的一个或仅一个之后不进行选择。 或者，机电式光开关可以被配置为除了电磁耦合到相应行地址线和列地址线的机电光开关之外。