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    PZT-BASED FERROELECTRIC THIN FILM AND METHOD OF FORMING THE SAME
    9.
    发明申请
    PZT-BASED FERROELECTRIC THIN FILM AND METHOD OF FORMING THE SAME 有权
    基于PZT的微波薄膜及其形成方法

    公开(公告)号：US20140293505A1

    公开(公告)日：2014-10-02

    申请号：US14182308

    申请日：2014-02-18

    申请人： MITSUBISHI MATERIALS CORPORATION

    发明人： Toshihiro Doi ,  Hideaki Sakurai ,  Nobuyuki Soyama ,  Takashi Noguchi

    IPC分类号： H01G4/08 ,  B05D3/02 ,  B05D1/38

    CPC分类号： H01G4/08 ,  B05D1/38 ,  B05D3/0254 ,  C23C16/409 ,  H01G4/018 ,  H01G4/06 ,  H01G4/30 ,  H01L21/02197 ,  H01L21/02282 ,  H01L21/02356 ,  H01L28/55 ,  H01L41/1876 ,  H01L41/318

    摘要： A PZT-based ferroelectric thin film is formed by coating a PZT-based ferroelectric thin film-forming composition on a lower electrode of a substrate one or two or more times, pre-baking the composition, and baking the composition to be crystallized, and this thin film includes PZT-based particles having an average particle size in a range of 500 nm to 3000 nm when measured on a surface of the thin film, in which heterogeneous fine particles having an average particle size of 20 nm or less, which are different from the PZT-based particles, are precipitated on a part or all of the grain boundaries on the surface of the thin film.

    摘要翻译： 通过将基于PZT的强电介质薄膜形成组合物在基板的下电极上涂覆一次或两次以上来形成PZT型铁电薄膜，预烘烤该组合物，并焙烧待结晶的组合物，以及 该薄膜包括平均粒度在500nm至3000nm范围内的PZT基颗粒，当在薄膜表面上测量时，其平均粒度为20nm以下的非均匀微粒为 与基于PZT的颗粒不同，在薄膜表面上的部分或全部晶界析出。

    PZT-BASED FERROELECTRIC THIN FILM AND METHOD OF MANUFACTURING THE SAME
    10.
    发明申请
    PZT-BASED FERROELECTRIC THIN FILM AND METHOD OF MANUFACTURING THE SAME 有权
    基于PZT的微波薄膜及其制造方法

    公开(公告)号：US20130258549A1

    公开(公告)日：2013-10-03

    申请号：US13831041

    申请日：2013-03-14

    申请人： MITSUBISHI MATERIALS CORPORATION

    发明人： Takashi Noguchi ,  Toshihiro Doi ,  Hideaki Sakurai ,  Toshiaki Watanabe ,  Nobuyuki Soyama

    IPC分类号： H01L41/187 ,  H01G4/018

    CPC分类号： H01L41/1876 ,  H01G4/018 ,  H01G4/1245 ,  H01L28/56 ,  H01L29/78391 ,  H01L37/025 ,  H01L41/0815 ,  H01L41/318 ,  H01L41/319 ,  H03H9/02031 ,  Y10T428/24975 ,  Y10T428/265

    摘要： A PZT-based ferroelectric thin film formed on a lower electrode of a substrate having the lower electrode in which the crystal plane is oriented in a (111) axis direction, having an orientation controlling layer which is formed on the lower electrode and has a layer thickness in which a crystal orientation is controlled in a (111) plane preferentially in a range of 45 nm to 270 nm, and a film thickness adjusting layer which is formed on the orientation controlling layer and has the same crystal orientation as the crystal orientation of the orientation controlling layer, in which an interface is formed between the orientation controlling layer and the film thickness adjusting layer.

    摘要翻译： 一种形成在具有下电极的基板的下电极上的PZT型铁电薄膜，其中晶体面沿（111）轴方向取向，具有形成在下电极上的取向控制层，并具有层 在（111）面中优选在45nm〜270nm的范围内控制晶体取向的厚度，以及形成在取向控制层上并具有与晶体取向相同的晶体取向的膜厚调整层 取向控制层，其中在取向控制层和膜厚度调节层之间形成界面。