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公开(公告)号：US06586877B1
公开(公告)日：2003-07-01
申请号：US09889605
申请日：2001-07-19
IPC分类号： H01J4000
CPC分类号： H01J31/26 , H01J29/92 , H01J31/49 , H01J2229/922 , H01J2231/50068
摘要： In an electron tube 1, a space S between a periphery part 15b of a semiconductor device 15 and a stem 11 is filled with an insulating resin 20. The insulating resin 20 functions as a reinforcing member while the electron tube 1 is assembled under high-temperature condition, thereby preventing a bump 16 from coming off a bump connection portion 19. Since the space S is only partly closed by the resin 20, the space between the semiconductor device 15 and the stem 11 is ensured a ventilability. That is, no air reservoir is formed between an electron incidence part 15a at the center of the semiconductor device 15 and the surface C of the stem 11, whereby air expanding at high temperature does not damage the electron incidence part 15a of the back-illuminated semiconductor device 15.
摘要翻译： 在电子管1中，半导体器件15的周边部分15b和杆11之间的空间S填充有绝缘树脂20.绝缘树脂20用作加强构件，而电子管1组装在高温 从而防止突起16从凸起连接部分19脱落。由于空间S仅部分地被树脂20封闭，因此确保了半导体器件15与杆11之间的空间。 也就是说，在半导体器件15的中心处的电子入射部分15a和杆11的表面C之间没有形成空气储存器，由此在高温下膨胀的空气不会损坏背照射的电子入射部分15a 半导体器件15。
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公开(公告)号：US06583558B1
公开(公告)日：2003-06-24
申请号：US09868883
申请日：2001-06-22
IPC分类号： H01J4006
CPC分类号： H01J29/44 , H01J31/26 , H01L2224/48091 , H01L2224/73265 , H01L2924/10155 , H01L2924/00014
摘要： An electron tube 10 mainly includes a sleeve 12, an input plate 14 having a photocathode surface 18, a stem 16 and a CCD 20. A vacuum is provided in an interior of the electron tube 10. The CCD 20 is fixed onto the stem such that a rear surface B faces the photocathode surface 18. In the CCD 20, on a single conductive type semiconductor substrate 64, a buried layer 66, a barrier region 68, a SiO2 layer 70, a storage electrode layer 72, a transmission electrode layer 74, and a barrier electrode layer 76 are formed at their predetermined positions. A PSG film 78 is formed at an entire front surface A over these layers to flatten the surface of the CCD 20. Further, SiN film 106 mainly composed of SiN is formed above the PSG film over the entire front surface A.
摘要翻译： 电子管10主要包括套管12，具有光电阴极表面18的输入板14，杆16和CCD 20.在电子管10的内部设有真空。CCD 20固定在杆上 后表面B面对光电面表面18.在CCD 20中，在单个导电型半导体衬底64上，掩埋层66，势垒区68，SiO 2层70，存储电极层72，透射电极层 74和阻挡电极层76形成在其预定位置。 在这些层的整个前表面A上形成PSG膜78，以平坦化CCD 20的表面。此外，主要由SiN构成的SiN膜106在整个前表面A上形成在PSG膜的上方。
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公开(公告)号：US5780913A
公开(公告)日：1998-07-14
申请号：US954616
申请日：1997-10-27
IPC分类号： H01J31/49 , H01L31/115
CPC分类号： H01J31/49
摘要： When light is incident on the photoelectric surface of this electron tube, photoelectrons are emitted. These photoelectrons are accelerated and incident on an electron beam irradiation diode. A reverse voltage of about 100 V is applied to the electron beam irradiation diode to form a depletion region almost throughout an anode layer and near the p-n junction interface of a silicon substrate. The incident accelerated electrons release a kinetic energy in a heavily doped p-type layer having an electron incidence surface and the depleted anode layer to form electron-hole pairs. In this case, since the heavily doped p-type layer having the electron incidence surface is very thin, the energy is hardly released in this layer, and almost all energy is released in the depletion region. Signal charges extracted from the electron-hole pairs formed upon releasing the energy are output as a signal from two electrodes.
摘要翻译： 当光入射到该电子管的光电表面上时，发射光电子。 这些光电子被加速并入射在电子束照射二极管上。 大约100V的反向电压被施加到电子束照射二极管，以在整个阳极层和硅衬底的p-n结界面附近形成耗尽区。 事件加速电子在具有电子入射表面和耗尽的阳极层的重掺杂p型层中释放动能以形成电子 - 空穴对。 在这种情况下，由于具有电子入射面的重掺杂p型层非常薄，所以在该层中几乎不释放能量，几乎所有能量在耗尽区中释放。 从释放能量时形成的电子 - 空穴对提取的信号电荷作为来自两个电极的信号被输出。
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公开(公告)号：US5654536A
公开(公告)日：1997-08-05
申请号：US557541
申请日：1995-11-14
IPC分类号： H01J43/04 , H01J43/12 , H01L31/107 , H01J40/14
CPC分类号： H01L31/1075 , H01J43/04 , H01J43/12
摘要： In a photomultiplier of the present invention, a semiconductor device arranged in an envelope to oppose a photocathode is constituted by a semiconductor substrate of a first conductivity type, a carrier multiplication layer of a second conductivity type different from the first conductivity type, which is formed on the semiconductor substrate by opitaxial growth, a breakdown voltage control layer of the second conductivity type, which is formed on the carrier multiplication layer and has a dopant concentration higher than that of the carrier multiplication layer, a first insulating layer formed on the breakdown voltage control layer and said carrier multiplication layer while partially exposing the surface of the breakdown voltage control layer as a receptor for photoelectrons and consisting of a nitride, and an ohmic electrode layer formed on a peripheral surface portion of the receptor of the breakdown voltage control layer. When the dopant concentration distribution in the carrier multiplication layer is uniformly controlled on the basis of epitaxial growth, the uniformity of an avalanche multiplication gain for photoelectrons incident at different positions on the receptor of the semiconductor device is improved, thereby largely increasing the energy resolving power.
摘要翻译： 在本发明的光电倍增器中，布置在外壳中以与光电阴极相对的半导体器件由第一导电类型的半导体衬底，不同于第一导电类型的第二导电类型的载流子倍增层构成，形成 在所述半导体衬底上通过外延生长形成第二导电类型的击穿电压控制层，所述第二导电类型的击穿电压控制层形成在所述载体倍增层上并且具有高于载流子倍增层的掺杂剂浓度的第一绝缘层， 控制层和所述载体倍增层，同时部分地暴露作为光电子的受体的击穿电压控制层的表面，并由氮化物和形成在击穿电压控制层的受体的外围表面部分上的欧姆电极层组成。 当基于外延生长均匀地控制载体倍增层中的掺杂剂浓度分布时，提高入射在半导体器件的接收器上的不同位置处的光电子的雪崩倍增益的均匀性，从而大大提高能量分辨能力 。
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公开(公告)号：US09609247B2
公开(公告)日：2017-03-28
申请号：US13144741
申请日：2010-01-22
IPC分类号： H04N5/372 , H01L27/146 , H01L27/148
CPC分类号： H04N5/37213 , H01L27/14609 , H01L27/14812
摘要： A solid-state imaging device 1 according to one embodiment of the present invention is a charge multiplying solid-state imaging device, and includes an imaging area 10 that generates a charge according to the amount of incident light, an output register unit 20 that receives the charge from the imaging area 10, and a multiplication register unit 28 that multiplies the charge from the output register 20, and performs feed-forward control of the multiplication factor of the multiplication register unit 28 according to the charge amount from the imaging area 10.
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公开(公告)号：US08841714B2
公开(公告)日：2014-09-23
申请号：US13979172
申请日：2011-11-11
IPC分类号： H01L31/02 , H01L27/148 , H04N5/372 , H01L27/146
CPC分类号： H01L27/14806 , H01L27/14601 , H01L27/14825 , H01L27/14831 , H04N5/37213
摘要： A solid state imaging device 1 is provided with a photoelectric conversion portion 2 having a plurality of photosensitive regions 7, and a potential gradient forming portion 3 having an electroconductive member 8 arranged opposite to the photosensitive regions 7. A planar shape of each photosensitive region 7 is a substantially rectangular shape. The photosensitive regions 7 are juxtaposed in a first direction intersecting with the long sides. The potential gradient forming portion 3 forms a potential gradient becoming higher along a second direction from one of the short sides to the other of the short sides of the photosensitive regions 7. The electroconductive member 8 includes a first region 8a extending in the second direction and having a first electric resistivity, and a second region 8b extending in the second direction and having a second electric resistivity smaller than the first electric resistivity.
摘要翻译： 固态成像装置1具有具有多个感光区域7的光电转换部分2和具有与感光区域7相对布置的导电部件8的电位梯度形成部分3.每个光敏区域7的平面形状 是大致矩形的形状。 感光区域7在与长边相交的第一方向上并列。 电位梯度形成部分3形成沿着从感光区域7的短边中的一个短边到另一个的第二方向变得更高的电位梯度。导电部件8包括沿第二方向延伸的第一区域8a和 具有第一电阻率，第二区域8b沿第二方向延伸并具有小于第一电阻率的第二电阻率。
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7.发明申请SOLID-STATE IMAGE PICKUP ELEMENT AND SOLID-STATE IMAGE PICKUP ELEMENT MOUNTING STRUCTURE 有权固态图像拾取元件和固态图像拾取元件安装结构公开(公告)号：US20140091421A1
公开(公告)日：2014-04-03
申请号：US14116852
申请日：2012-06-19
IPC分类号： H01L27/146
CPC分类号： H01L27/14636 , H01L24/05 , H01L24/06 , H01L24/16 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L27/14618 , H01L2224/02373 , H01L2224/02375 , H01L2224/0401 , H01L2224/04042 , H01L2224/04073 , H01L2224/05548 , H01L2224/05553 , H01L2224/05555 , H01L2224/0603 , H01L2224/06051 , H01L2224/06135 , H01L2224/16225 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/4824 , H01L2224/49175 , H01L2224/73204 , H01L2224/73265 , H01L2924/00014 , H01L2924/15151 , H01L2924/15192 , H01L2924/16195 , H01L2924/19107 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A solid-state image pickup element is provided with a semiconductor substrate having a photosensitive region, a plurality of first electrode pads arrayed on a principal face of the semiconductor substrate, a plurality of second electrode pads arrayed in a direction along a direction in which the plurality of first electrode pads are arrayed, on the principal face of the semiconductor substrate, and a plurality of interconnections connecting the plurality of first electrode pads and the plurality of second electrode pads in one-to-one correspondence. The plurality of interconnections connect the first and second electrode pads so that each interconnection connects the first electrode pad and the second electrode pad in a positional relation of line symmetry with respect to a center line perpendicular to the array directions of the plurality of first and second electrode pads.
摘要翻译： 固体摄像元件设置有具有感光区域的半导体衬底，排列在半导体衬底的主面上的多个第一电极焊盘，沿着沿着该半导体衬底的方向的方向排列的多个第二电极焊盘， 多个第一电极焊盘排列在半导体衬底的主面上，并且一对一对应连接多个第一电极焊盘和多个第二电极焊盘的多个互连。 多个互连件连接第一和第二电极焊盘，使得每个互连以相对于垂直于多个第一和第二电极焊盘和第二电极焊盘的阵列方向的中心线的线对称的位置关系连接第一电极焊盘和第二电极焊盘 电极垫
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8.发明授权Solid-state imaging device having photoelectric converting portions and first and second transfer portions 有权具有光电转换部分和第一和第二转印部分的固态成像装置公开(公告)号：US08446500B2
公开(公告)日：2013-05-21
申请号：US12990051
申请日：2009-04-22
IPC分类号： H04N5/335 , H01L27/148
CPC分类号： H01L27/14831 , H01L27/14825 , H04N5/37213
摘要： A solid-state imaging device 1 is provided with a plurality of photoelectric converting portions 3 and first and second shift registers 9, 13. Each photoelectric converting portion 3 has a photosensitive region 15 which generates a charge according to incidence of light and which has a planar shape of a nearly rectangular shape composed of two long sides and two short sides, and a potential gradient forming region 17 which forms a potential gradient increasing along a predetermined direction parallel to the long sides forming the planar shape of the photosensitive region 15, in the photosensitive region, 15. The plurality of photoelectric converting portions 3 are juxtaposed along a direction intersecting with the predetermined direction. The first and second shift registers 9, 13 acquire charges transferred from the respective photoelectric converting portions 3 and transfer them in the direction intersecting with the predetermined direction to output them. This achieves the solid-state imaging device capable of quickly reading out the charge generated in the photosensitive region, without complicating image processing.
摘要翻译： 固态成像装置1设置有多个光电转换部分3和第一和第二移位寄存器9,13。每个光电转换部分3具有光敏区域15，其根据光的入射产生电荷，并且具有 由两个长边和两个短边组成的近似矩形形状的平面形状以及形成沿着平行于形成感光区域15的平面形状的长边的预定方向增加的电位梯度的电位梯度形成区域17 感光区域15.多个光电转换部分3沿着与预定方向相交的方向并置。 第一移位寄存器9和第二移位寄存器13获取从各个光电转换部分3传送的电荷并沿与预定方向相交的方向传送它们以输出它们。 这实现了能够快速读出感光区域中产生的电荷的固态成像装置，而不会使图像处理复杂化。
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公开(公告)号：US08334918B2
公开(公告)日：2012-12-18
申请号：US12516411
申请日：2007-11-28
CPC分类号： H01L27/14887 , H01L27/14601 , H01L27/14656 , H04N5/335 , H04N5/3591
摘要： A solid-state image pickup device 1 includes: a plurality of photoelectric converters 2 which are aligned in a predetermined direction and have a potential made higher toward one side of a direction crossing the predetermined direction; a transferring section 6 which is provided on one side of the photoelectric converters 2 in the direction crossing the predetermined direction and transfers charges generated in the photoelectric converters 2 in the predetermined direction; an unnecessary charge discharging drain 7 which is provided adjacent to the photoelectric converter 2 along the direction crossing the predetermined direction and discharges unnecessary charges generated in the photoelectric converter 2 from the photoelectric converter 2; and an unnecessary charge discharging gate 8 which is provided between the photoelectric converter 2 and the unnecessary charge discharging drain 7 and selectively performs cutting-off and release of the flow of unnecessary charges from the photoelectric converter 2 to the unnecessary charge discharging drain 7.
摘要翻译： 固体摄像装置1包括：多个光电转换器2，其沿预定方向排列并且具有朝向与预定方向交叉的方向的一侧较高的电位; 传送部分6，其沿着与预定方向交叉的方向设置在光电转换器2的一侧上，并沿预定方向传送在光电转换器2中产生的电荷; 沿着与规定方向交叉的方向与光电转换器2相邻设置的不需要的电荷排出漏极7，并从光电转换器2放出在光电转换器2中产生的不必要的电荷; 以及设置在光电转换器2和不需要的电荷排出漏极7之间的不必要的电荷放电栅极8，并且选择性地执行切断和释放从光电转换器2到不需要的电荷排放漏极7的不必要电荷的流动。
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公开(公告)号：US08188417B2
公开(公告)日：2012-05-29
申请号：US12444967
申请日：2007-10-09
IPC分类号： H01L27/00 , H01L31/00 , H01L31/0203 , H01L23/48
CPC分类号： H01L31/024 , H01L25/042 , H01L27/14618 , H01L31/0203 , H01L2224/05553 , H01L2224/48091 , H01L2224/4824 , H01L2224/49175 , H04N5/2253 , H01L2924/00014
摘要： In a photodetecting device 3, a wiring board 12 is provided at the front surface side of a photodetecting element 11 so that a first bonding pad region 15 formed on the front surface of the photodetecting element 11 is exposed, and second bonding pads 17B are formed, of the wiring board 12, in the region on a further inner side than first bonding pads 17A. Thereby, in the photodetecting device 3, a forming space for wire bonding can be located at the inside of the photodetecting element 11, so that the wiring board 12 and the photodetecting element 11 can be made almost equal in size. As a result, in the photodetecting device 3, the area that the photodetecting element 11 occupies relative to the photodetecting device 3 can be sufficiently secured, and minimization of the non-sensitive region in the case of a buttable arrangement of the photodetecting devices 3 on a cold plate 2 can be realized.
摘要翻译： 在光电检测装置3中，在受光元件11的正面侧设置配线基板12，使得形成在受光元件11的表面上的第一焊盘区域15露出，形成第二接合焊盘17B 在比第一接合焊盘17A更靠内侧的区域中。 因此，在光检测装置3中，用于引线接合的形成空间可以位于受光元件11的内部，使得布线板12和光电检测元件11的尺寸几乎相等。 结果，在光检测装置3中，可以充分确保光检测元件11相对于受光器件3占有的面积，并且在光检测装置3的可放置配置的情况下，非敏感区域的最小化 可以实现冷板2。
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