公开(公告)号：US20140319567A1

公开(公告)日：2014-10-30

申请号：US14261136

申请日：2014-04-24

Applicant: NICHIA CORPORATION

Inventor： Akinori YONEDA ,  Akiyoshi KINOUCHI ,  Hisashi KASAl ,  Yoshiyuki AIHARA ,  Hirokazu SASA ,  Shinji NAKAMURA

IPC: H01L33/38 ,  H01L33/62

CPC classification number: H01L33/62 ,  H01L21/6835 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/45 ,  H01L24/48 ,  H01L24/82 ,  H01L24/85 ,  H01L24/96 ,  H01L33/24 ,  H01L33/38 ,  H01L33/387 ,  H01L33/40 ,  H01L33/486 ,  H01L33/502 ,  H01L33/54 ,  H01L33/56 ,  H01L2021/60 ,  H01L2221/6835 ,  H01L2221/68368 ,  H01L2221/68372 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2224/04105 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/2101 ,  H01L2224/2105 ,  H01L2224/211 ,  H01L2224/215 ,  H01L2224/2401 ,  H01L2224/24011 ,  H01L2224/2405 ,  H01L2224/2413 ,  H01L2224/245 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48095 ,  H01L2224/48101 ,  H01L2224/4813 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/821 ,  H01L2224/82106 ,  H01L2224/85947 ,  H01L2224/96 ,  H01L2924/0002 ,  H01L2924/12035 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2933/0016 ,  H01L2933/005 ,  H01L2933/0066 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/01079 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/00014 ,  H01L2224/82

Abstract: A provided light includes a semiconductor chip including a p-type semiconductor layer and an n-type semiconductor layer, the semiconductor chip being adapted to emit light between the p-type semiconductor layer and the n-type semiconductor layer; a p-side pad electrode disposed on an upper surface side of the semiconductor chip and over the p-type semiconductor layer; an n-side pad electrode disposed on an upper surface side of the semiconductor chip and over the n-type semiconductor layer; a resin layer disposed to cover the upper surface of the semiconductor chip; a p-side connection electrode and an n-side connection electrode disposed at an outer surface of the resin layer and positioned on the upper surface side of the semiconductor chip; and a metal wire disposed in the resin. The metal wire is adapted to make connection at least one of between the p-side pad electrode and the p-side connection electrode, and between the n-side pad electrode and the n-side connection electrode.

Abstract translation: 所提供的光包括包括p型半导体层和n型半导体层的半导体芯片，所述半导体芯片适于在p型半导体层和n型半导体层之间发光; p侧焊盘电极，设置在所述半导体芯片的上表面侧并且位于所述p型半导体层上方; 设置在所述半导体芯片的上表面侧并且位于所述n型半导体层上的n侧焊盘电极; 设置成覆盖半导体芯片的上表面的树脂层; p侧连接电极和n侧连接电极，设置在树脂层的外表面并位于半导体芯片的上表面侧; 以及设置在树脂中的金属线。 金属线适于连接p侧焊盘电极和p侧连接电极之间以及n侧焊盘电极和n侧连接电极之中的至少一个。