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公开(公告)号：US20170301844A1
公开(公告)日：2017-10-19
申请号：US15641231
申请日：2017-07-04
Applicant: NICHIA CORPORATION
Inventor： Akinori YONEDA , Yoshiyuki AIHARA , Shinji NAKAMURA
CPC classification number: H01L33/62 , H01L33/0095 , H01L33/54 , H01L2224/94 , H01L2933/0033
Abstract: A manufacturing method of a light emitting device includes preparing a wafer that is provided by arranging a plurality of semiconductor light emitting elements including semiconductor stacks and electrodes provided on first surfaces of the semiconductor stacks. A metal wire is wired in an arc shape between the electrodes of the plurality of semiconductor light emitting elements that are arranged in one direction on the wafer so as to connect each of the electrodes and the metal wire. A resin layer is provided on a side of the first surfaces of the semiconductor stacks in such a way that the metal wire is accommodated inside the resin layer. The wafer is cut along a boundary line to segment the plurality of semiconductor light emitting elements so as to singulate the plurality of semiconductor light emitting elements.
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公开(公告)号：US20170012174A1
公开(公告)日：2017-01-12
申请号：US15276449
申请日：2016-09-26
Applicant: NICHIA CORPORATION
Inventor： Akinori YONEDA , Shinji NAKAMURA , Akiyoshi KINOUCHI , Yoshiyuki AIHARA , Hirokazu SASA
CPC classification number: H01L33/387 , H01L33/0095 , H01L33/44 , H01L33/62
Abstract: A light emitting element for flip-chip mounting having a flat mounting surface which allows a decrease in the width of the streets of a wafer. In the light emitting element, the insulating member filling around the bumps and flattening the upper surface is formed with a margin of a region with a width which is equal to or larger than the width of the streets on the dividing lines, so that at the time of dividing the wafer along the dividing lines, the insulating member is not processed, which allows designing of the streets with a small width.
Abstract translation: 一种用于倒装芯片安装的发光元件，其具有平坦的安装表面，其允许晶片的街道宽度的减小。 在发光元件中，填充凸起并使上表面变平的绝缘构件形成有宽度等于或大于分界线上的街道宽度的区域的边缘，使得在 分割晶片沿着分割线的时间，绝缘构件不被处理，这允许以小的宽度设计街道。
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公开(公告)号：US20150333236A1
公开(公告)日：2015-11-19
申请号：US14808706
申请日：2015-07-24
Applicant: Nichia Corporation
Inventor： Akinori YONEDA , Shinji NAKAMURA , Yoshiyuki AIHARA , Hirokazu SASA
CPC classification number: H01L33/507 , H01L24/18 , H01L33/38 , H01L33/46 , H01L33/505 , H01L33/54 , H01L33/58 , H01L33/60 , H01L2924/12041 , H01L2924/15788 , H01L2933/005 , H01L2924/00
Abstract: To provide a method of manufacturing at low cost a light emitting device that converts the wavelength of light radiated by a light emitting element and emits, the method includes: forming a phosphor layer on a translucent substrate; arranging a plurality of light emitting elements with a predetermined spacing, the light emitting elements having an electrode formed face provided with positive and negative electrodes respectively and arranged with the electrode formed faces on the top; embedding a resin containing phosphor particles so that an upper face of the embedded resin does not bulge over a plane containing the electrode formed faces; and curing the resin, and then cutting and dividing the cured resin, the phosphor layer and the translucent substrate into a plurality of light emitting devices each including one or more of the light emitting elements.
Abstract translation: 为了提供低成本地制造发光装置的方法，该发光装置转换由发光元件辐射的光的波长并发射，所述方法包括：在透光性基板上形成荧光体层; 以规定的间隔配置多个发光元件，所述发光元件具有分别设置有正极和负极的电极形成面，并且将电极形成面布置在顶部; 包埋含有荧光体颗粒的树脂，使得嵌入树脂的上表面不会在包含电极形成面的平面上凸出; 并固化树脂，然后将固化树脂，荧光体层和透光性基板切割分割成多个发光器件，每个发光器件包括一个或多个发光元件。
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公开(公告)号：US20150311410A1
公开(公告)日：2015-10-29
申请号：US14745120
申请日：2015-06-19
Applicant: NICHIA CORPORATION
Inventor： Akinori YONEDA , Akiyoshi KINOUCHI , Hisashi KASAI , Yoshiyuki AIHARA , Hirokazu SASA , Shinji NAKAMURA
CPC classification number: H01L33/62 , H01L21/6835 , H01L24/19 , H01L24/20 , H01L24/24 , H01L24/45 , H01L24/48 , H01L24/82 , H01L24/85 , H01L24/96 , H01L33/24 , H01L33/38 , H01L33/387 , H01L33/40 , H01L33/486 , H01L33/502 , H01L33/54 , H01L33/56 , H01L2021/60 , H01L2221/6835 , H01L2221/68368 , H01L2221/68372 , H01L2221/68381 , H01L2221/68386 , H01L2224/04105 , H01L2224/05644 , H01L2224/05647 , H01L2224/131 , H01L2224/16225 , H01L2224/16227 , H01L2224/2101 , H01L2224/2105 , H01L2224/211 , H01L2224/215 , H01L2224/2401 , H01L2224/24011 , H01L2224/2405 , H01L2224/2413 , H01L2224/245 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48095 , H01L2224/48101 , H01L2224/4813 , H01L2224/48644 , H01L2224/48647 , H01L2224/48844 , H01L2224/48847 , H01L2224/821 , H01L2224/82106 , H01L2224/85947 , H01L2224/96 , H01L2924/0002 , H01L2924/12035 , H01L2924/12041 , H01L2924/12042 , H01L2924/181 , H01L2924/3511 , H01L2933/0016 , H01L2933/005 , H01L2933/0066 , H01L2924/00 , H01L2924/00012 , H01L2924/014 , H01L2924/01079 , H01L2924/01047 , H01L2924/01029 , H01L2924/0105 , H01L2924/00014 , H01L2224/82
Abstract: A light emitting device includes a semiconductor chip including a p-type semiconductor layer and an n-type semiconductor layer, the semiconductor chip being adapted to emit light between the p-type semiconductor layer and the n-type semiconductor layer; a p-side pad electrode disposed on an upper surface side of the semiconductor chip and over the p-type semiconductor layer; an n-side pad electrode disposed on an upper surface side of the semiconductor chip and over the n-type semiconductor layer; a resin layer disposed to cover the upper surface of the semiconductor chip; a p-side connection electrode and an n-side connection electrode disposed at an outer surface of the resin layer and positioned on the upper surface side of the semiconductor chip; and a metal wire disposed in the resin. The metal wire is adapted to make connection at least one of between the p-side pad electrode and the p-side connection electrode, and between the n-side pad electrode and the n-side connection electrode.
Abstract translation: 发光器件包括具有p型半导体层和n型半导体层的半导体芯片，该半导体芯片适于在p型半导体层和n型半导体层之间发光; p侧焊盘电极，设置在所述半导体芯片的上表面侧并且位于所述p型半导体层上方; 设置在所述半导体芯片的上表面侧并且位于所述n型半导体层上的n侧焊盘电极; 设置成覆盖半导体芯片的上表面的树脂层; p侧连接电极和n侧连接电极，设置在树脂层的外表面并位于半导体芯片的上表面侧; 以及设置在树脂中的金属线。 金属线适于连接p侧焊盘电极和p侧连接电极之间以及n侧焊盘电极和n侧连接电极之中的至少一个。
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公开(公告)号：US20150207042A1
公开(公告)日：2015-07-23
申请号：US14599068
申请日：2015-01-16
Applicant: NICHIA CORPORATION
Inventor： Akinori YONEDA , Shinji NAKAMURA , Yoshiyuki AIHARA
IPC: H01L33/50
CPC classification number: H01L33/52 , H01L24/45 , H01L33/0095 , H01L33/38 , H01L33/505 , H01L33/507 , H01L33/54 , H01L33/62 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/4903 , H01L2224/49107 , H01L2924/181 , H01L2933/0033 , H01L2933/005 , H01L2933/0066 , H01L2924/20752 , H01L2924/20753 , H01L2924/00014 , H01L2924/00
Abstract: A method of manufacturing a light emitting device includes preparing wafer with a plurality of light emitting elements arrayed on a growth substrate, on a first side of a semiconductor stacked layer body, forming a resin layer which includes metal wires respectively connected to a p-side electrode and an n-side electrode, forming a groove by removing at least portion of the resin layer from an upper surface side in a boundary region between the light emitting elements and exposing end surfaces of metal wires which are internal conductive members on an inner side surface defining a groove, forming electrodes for external connection respectively connecting to exposed end surfaces of metal wires, and singulating the wafer into a plurality of singulated light emitting elements.
Abstract translation: 一种制造发光器件的方法包括：在半导体堆叠层体的第一侧上制备排列在生长衬底上的多个发光元件的晶片，形成树脂层，该树脂层包括分别连接到p侧的金属线 电极和n侧电极，通过在发光元件与作为内侧的内部导电构件的金属线的露出端面之间的边界区域中的上表面侧从上表面侧除去树脂层的至少一部分而形成沟槽 表面限定凹槽，形成分别连接到金属线的暴露端表面的用于外部连接的电极，以及将晶片分成多个单独的发光元件。
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Patent Agency Ranking
公开(公告)号：US20140319567A1
公开(公告)日：2014-10-30
申请号：US14261136
申请日：2014-04-24
Applicant: NICHIA CORPORATION
Inventor： Akinori YONEDA , Akiyoshi KINOUCHI , Hisashi KASAl , Yoshiyuki AIHARA , Hirokazu SASA , Shinji NAKAMURA
CPC classification number: H01L33/62 , H01L21/6835 , H01L24/19 , H01L24/20 , H01L24/24 , H01L24/45 , H01L24/48 , H01L24/82 , H01L24/85 , H01L24/96 , H01L33/24 , H01L33/38 , H01L33/387 , H01L33/40 , H01L33/486 , H01L33/502 , H01L33/54 , H01L33/56 , H01L2021/60 , H01L2221/6835 , H01L2221/68368 , H01L2221/68372 , H01L2221/68381 , H01L2221/68386 , H01L2224/04105 , H01L2224/05644 , H01L2224/05647 , H01L2224/131 , H01L2224/16225 , H01L2224/16227 , H01L2224/2101 , H01L2224/2105 , H01L2224/211 , H01L2224/215 , H01L2224/2401 , H01L2224/24011 , H01L2224/2405 , H01L2224/2413 , H01L2224/245 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48095 , H01L2224/48101 , H01L2224/4813 , H01L2224/48644 , H01L2224/48647 , H01L2224/48844 , H01L2224/48847 , H01L2224/821 , H01L2224/82106 , H01L2224/85947 , H01L2224/96 , H01L2924/0002 , H01L2924/12035 , H01L2924/12041 , H01L2924/12042 , H01L2924/181 , H01L2924/3511 , H01L2933/0016 , H01L2933/005 , H01L2933/0066 , H01L2924/00 , H01L2924/00012 , H01L2924/014 , H01L2924/01079 , H01L2924/01047 , H01L2924/01029 , H01L2924/0105 , H01L2924/00014 , H01L2224/82
Abstract: A provided light includes a semiconductor chip including a p-type semiconductor layer and an n-type semiconductor layer, the semiconductor chip being adapted to emit light between the p-type semiconductor layer and the n-type semiconductor layer; a p-side pad electrode disposed on an upper surface side of the semiconductor chip and over the p-type semiconductor layer; an n-side pad electrode disposed on an upper surface side of the semiconductor chip and over the n-type semiconductor layer; a resin layer disposed to cover the upper surface of the semiconductor chip; a p-side connection electrode and an n-side connection electrode disposed at an outer surface of the resin layer and positioned on the upper surface side of the semiconductor chip; and a metal wire disposed in the resin. The metal wire is adapted to make connection at least one of between the p-side pad electrode and the p-side connection electrode, and between the n-side pad electrode and the n-side connection electrode.
Abstract translation: 所提供的光包括包括p型半导体层和n型半导体层的半导体芯片，所述半导体芯片适于在p型半导体层和n型半导体层之间发光; p侧焊盘电极，设置在所述半导体芯片的上表面侧并且位于所述p型半导体层上方; 设置在所述半导体芯片的上表面侧并且位于所述n型半导体层上的n侧焊盘电极; 设置成覆盖半导体芯片的上表面的树脂层; p侧连接电极和n侧连接电极，设置在树脂层的外表面并位于半导体芯片的上表面侧; 以及设置在树脂中的金属线。 金属线适于连接p侧焊盘电极和p侧连接电极之间以及n侧焊盘电极和n侧连接电极之中的至少一个。
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公开(公告)号：US20170271559A1
公开(公告)日：2017-09-21
申请号：US15614233
申请日：2017-06-05
Applicant: NICHIA CORPORATION
Inventor： Akinori YONEDA , Yoshiyuki AIHARA , Shinji NAKAMURA , Akiyoshi KINOUCHI , Kazuki KASHIMOTO , Kazuyuki AKAISHI
CPC classification number: H01L33/385 , H01L33/387 , H01L33/405 , H01L33/486 , H01L33/54 , H01L33/62
Abstract: A side-view type light emitting device has a bottom surface thereof as a light emission surface and a first lateral surface thereof as a mounting surface for mounting on a mounting substrate, and includes a semiconductor layered structure including a first semiconductor layer, an active layer and a second semiconductor layer; a first connecting electrode exposed from the first lateral surface and electrically connected to the first semiconductor layer; a first electrode disposed between the first semiconductor layer and the first connecting electrode; a second connecting electrode exposed from the first lateral surface; a metal wire electrically connecting an upper surface of the second semiconductor layer to the second connecting electrode; and a resin layer. In a direction perpendicular to the light emission surface, the active layer does not overlap with the first connecting electrode, and the active layer does not overlap with the second connecting electrode.
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公开(公告)号：US20160365498A1
公开(公告)日：2016-12-15
申请号：US15247188
申请日：2016-08-25
Applicant: NICHIA CORPORATION
Inventor： Akinori YONEDA , Akiyoshi KINOUCHI , Hisashi KASAI , Yoshiyuki AIHARA , Hirokazu SASA , Shinji NAKAMURA
CPC classification number: H01L33/62 , H01L21/6835 , H01L24/19 , H01L24/20 , H01L24/24 , H01L24/45 , H01L24/48 , H01L24/82 , H01L24/85 , H01L24/96 , H01L33/24 , H01L33/38 , H01L33/387 , H01L33/40 , H01L33/486 , H01L33/502 , H01L33/54 , H01L33/56 , H01L2021/60 , H01L2221/6835 , H01L2221/68368 , H01L2221/68372 , H01L2221/68381 , H01L2221/68386 , H01L2224/04105 , H01L2224/05644 , H01L2224/05647 , H01L2224/131 , H01L2224/16225 , H01L2224/16227 , H01L2224/2101 , H01L2224/2105 , H01L2224/211 , H01L2224/215 , H01L2224/2401 , H01L2224/24011 , H01L2224/2405 , H01L2224/2413 , H01L2224/245 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48095 , H01L2224/48101 , H01L2224/4813 , H01L2224/48644 , H01L2224/48647 , H01L2224/48844 , H01L2224/48847 , H01L2224/821 , H01L2224/82106 , H01L2224/85947 , H01L2224/96 , H01L2924/0002 , H01L2924/12035 , H01L2924/12041 , H01L2924/12042 , H01L2924/181 , H01L2924/3511 , H01L2933/0016 , H01L2933/005 , H01L2933/0066 , H01L2924/00 , H01L2924/00012 , H01L2924/014 , H01L2924/01079 , H01L2924/01047 , H01L2924/01029 , H01L2924/0105 , H01L2924/00014 , H01L2224/82
Abstract: A light emitting device includes a semiconductor chip including a p-type semiconductor layer and an n-type semiconductor layer, the semiconductor chip being adapted to emit light between the p-type semiconductor layer and the n-type semiconductor layer; a p-side pad electrode disposed on an upper surface side of the semiconductor chip and over the p-type semiconductor layer; an n-side pad electrode disposed on an upper surface side of the semiconductor chip and over the n-type semiconductor layer; a resin layer disposed to cover the upper surface of the semiconductor chip; a p-side connection electrode and an n-side connection electrode disposed at an outer surface of the resin layer and positioned on the upper surface side of the semiconductor chip; and a metal wire disposed in the resin. The metal wire is adapted to make connection at least one of between the p-side pad electrode and the p-side connection electrode, and between the n-side pad electrode and the n-side connection electrode.
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公开(公告)号：US20150295152A1
公开(公告)日：2015-10-15
申请号：US14683164
申请日：2015-04-10
Applicant: NICHIA CORPORATION
Inventor： Akinori YONEDA , Yoshiyuki AIHARA , Shinji NAKAMURA
CPC classification number: H01L33/62 , H01L33/0095 , H01L33/54 , H01L2224/94 , H01L2933/0033
Abstract: A light emitting device includes a semiconductor light emitting element, a resin layer, and a metal wire. The semiconductor light emitting element includes a semiconductor stack and an electrode. The semiconductor stack has one surface. The metal wire has a first surface, a second surface opposite to the first surface, and an end surface between the first surface and the second surface. The metal wire is provided in the resin layer and electrically connected to an upper surface of the electrode via the first surface. The end surface of the metal wire is exposed from the resin layer. A lower end of the end surface closest to the first surface of the metal wire that is exposed from the resin layer is provided at an opposite side of the one surface of the semiconductor stack with respect to the upper surface of the electrode.
Abstract translation: 发光器件包括半导体发光元件，树脂层和金属线。 半导体发光元件包括半导体叠层和电极。 半导体堆叠具有一个表面。 金属线具有第一表面，与第一表面相对的第二表面，以及在第一表面和第二表面之间的端面。 金属线设置在树脂层中，并且经由第一表面电连接到电极的上表面。 金属线的端面从树脂层露出。 在半导体堆叠的一个表面相对于电极的上表面的相反侧设置从树脂层露出的最靠近金属线的第一表面的端面的下端。
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公开(公告)号：US20150060934A1
公开(公告)日：2015-03-05
申请号：US14477617
申请日：2014-09-04
Applicant: Nichia Corporation
Inventor： Akinori YONEDA , Yoshiyuki AIHARA , Shinji NAKAMURA , Akiyoshi KINOUCHI , Kazuki KASHIMOTO , Kazuyuki AKAISHI
CPC classification number: H01L33/385 , H01L33/387 , H01L33/405 , H01L33/486 , H01L33/54 , H01L33/62
Abstract: A side-view type light emitting device having a bottom surface thereof as a light emission surface and one side surface thereof as amounting surface for mounting on amounting substrate includes a stacked semiconductor layer having a first semiconductor layer, an active layer, and a second semiconductor layer which are stacked in that order from a side of the bottom surface; a first connecting electrode exposed from the one side surface and electrically connected to the first semiconductor layer; a metal wire having one end thereof electrically connected to an upper surface of the second semiconductor layer; a second connecting electrode exposed from the one side surface and electrically connected to the other end of the metal wire; and a resin layer which covers at least a part of each of the first semiconductor layer, the second semiconductor layer, the first connecting electrode, the second connecting electrode and the metal wire and which is configured to form an upper surface and side surfaces of the light emitting device.
Abstract translation: 将其底表面作为发光面的侧视型发光器件和作为用于安装在数量基片上的表面的一个侧面包括具有第一半导体层，有源层和第二半导体的叠层半导体层 层，其从该底面的一侧依次层叠; 从所述一个侧表面暴露并电连接到所述第一半导体层的第一连接电极; 金属线，其一端电连接到第二半导体层的上表面; 从所述一个侧表面暴露并且电连接到所述金属线的另一端的第二连接电极; 以及树脂层，其覆盖第一半导体层，第二半导体层，第一连接电极，第二连接电极和金属线中的每一个的至少一部分，并且被配置为形成上表面和 发光装置。
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