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公开(公告)号：US06521105B2
公开(公告)日：2003-02-18
申请号：US09909852
申请日：2001-07-23
申请人： Noriaki Tani , Kazuhiko Saito , Koukou Suu
发明人： Noriaki Tani , Kazuhiko Saito , Koukou Suu
IPC分类号： C23C1434
CPC分类号： H01J37/3438 , C23C14/088 , H01J37/34
摘要： In order to provide technology where film deposition speed and Sr/Ti composition ratio is constant even when forming dielectric films consecutively on a plurality of substrates using sputtering techniques, a sputtering apparatus is provided with an opposing electrode located about the periphery of a mounting table at an inner bottom surface of a vacuum chamber. Further, a multiplicity of holes are formed at the surface of the opposing electrode so that the surface area of the opposing electrode is large. Sputtering dielectric material becomes affixed to the surface of the opposing electrode so that a dielectric film is formed at this surface. The charge density of charge distributed at the surface of the opposing electrode is therefore small compared with the related art even when positive charge is distributed. The potential of the opposing electrode surface can therefore be kept substantially at earth potential.
摘要翻译： 即使在使用溅射技术在多个基板上连续形成介电膜的情况下，为了提供成膜速度和Sr / Ti组成比恒定的技术，溅射装置设置有位于安装台的周围的相对电极 真空室的内底面。 此外，在相对电极的表面形成多个孔，使得相对电极的表面积较大。 溅射电介质材料固定到相对电极的表面，使得在该表面形成电介质膜。 因此即使在正电荷分布的情况下，分散在对置电极的表面的电荷的电荷密度也比现有技术小。 因此，相对电极表面的电位可以基本上保持在地电位。
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公开(公告)号：US08218122B2
公开(公告)日：2012-07-10
申请号：US12475907
申请日：2009-06-01
申请人： Satoru Takasawa , Masaki Takei , Hirohisa Takahashi , Hiroaki Katagiri , Sadayuki Ukishima , Noriaki Tani , Satoru Ishibashi , Tadashi Masuda
发明人： Satoru Takasawa , Masaki Takei , Hirohisa Takahashi , Hiroaki Katagiri , Sadayuki Ukishima , Noriaki Tani , Satoru Ishibashi , Tadashi Masuda
IPC分类号： G02F1/13
CPC分类号： H01L23/53238 , H01L21/2855 , H01L23/53233 , H01L27/124 , H01L2924/0002 , H05K1/0306 , H05K3/16 , H05K3/388 , H01L2924/00
摘要： A wiring film having excellent adhesion and barrier property and a low resistance value is formed. An oxygen gas is introduced into a vacuum chamber in which an object to be film formed is disposed; a sputtering target is sputtered in a vacuum ambience containing oxygen; and a first metallic film is formed on a surface of the object to be film formed. The first sputtering target includes copper as a major component and at least one kind of additive elements selected from an additive element group consisting of Mg, Al, Si, Be, Ca, Sr, Ba, Ra, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb and Dy. Thereafter, a second metallic film is formed on a surface of the first metallic film by sputtering the sputtering target in a state in which the introduction of the oxygen gas into a vacuum ambience is stopped, and then a wiring film is formed by etching the first and second metallic films.
摘要翻译： 形成具有优异的粘附性和阻隔性和低电阻值的布线膜。 将氧气引入其中设置有被成膜物体的真空室中; 溅射靶在含有氧的真空环境中溅射; 并且在待成膜物体的表面上形成第一金属膜。 第一溅射靶包括铜作为主要成分，以及选自由Mg，Al，Si，Be，Ca，Sr，Ba，Ra，Sc，Y，La，Ce组成的添加元素组中的至少一种添加元素， Pr，Nd，Pm，Sm，Eu，Gd，Tb和Dy。 此后，在将氧气引入真空环境的状态下，通过溅射溅射靶溅射溅射靶，在第一金属膜的表面上形成第二金属膜，然后通过蚀刻第一金属膜形成布线膜 和第二金属膜。
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公开(公告)号：US20080210547A1
公开(公告)日：2008-09-04
申请号：US12010585
申请日：2008-01-28
IPC分类号： C23C14/35
CPC分类号： C23C14/352 , C23C14/086 , C23C14/568 , H01J37/3266 , H01J37/32752 , H01J37/34 , H01J37/3408 , H01J37/347
摘要： A sputtering apparatus for ensuring high target utilization efficiency is provided. The sputtering apparatus 1 of the present invention comprises a moving means 28a, 28b so that first and second magnet members 23a, 23b can be moved by the moving means 28a, 28b in planes parallel to the surfaces of first and second targets 21a, 21b. When the first and second magnet members 23a, 23b move, magnetic field lines as well as deeply eroded regions on the surfaces of the first and second targets 21a, 21b also move, whereby large areas on the surfaces of the first and second targets 21a, 21b are sputtered.
摘要翻译： 提供了一种用于确保高目标利用效率的溅射装置。 本发明的溅射装置1包括移动装置28a，28b，使得第一和第二磁体构件23a，23b可以通过移动装置28a，28b在与第一和第二表面平行的平面中移动， 第二目标21a，21b。 当第一和第二磁性部件23a，23b移动时，第一和第二靶子21a，21b的表面上的磁场线以及深度侵蚀的区域也移动，由此第一和第二磁体23a的表面上的大面积 溅射第二靶21a，21b。
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公开(公告)号：US20070158180A1
公开(公告)日：2007-07-12
申请号：US11606363
申请日：2006-11-30
申请人： Atsushi Ota , Shinichiro Taguchi , Isao Sugiura , Noriaki Tani , Makoto Arai , Junya Kiyota
发明人： Atsushi Ota , Shinichiro Taguchi , Isao Sugiura , Noriaki Tani , Makoto Arai , Junya Kiyota
CPC分类号： H01J37/3408 , C23C14/352
摘要： The present invention provides a magnetron sputtering method and a magnetron sputtering apparatus that can significantly reduce a non-erosion region causing an abnormal electrical discharge on a surface of a target and deposition of target materials. A plurality of targets 8A, 8B, 8C and 8D are disposed in a vacuum atmosphere while being electrically independent to each other; and sputtering is performed by generating magnetron discharge in the vicinity of the targets 8A, 8B, 8C and 8D. During the sputtering, voltages having a phase difference of 180 degrees are alternately applied to the adjacent targets 8A, 8B, 8C and 8D at a predetermined timing.
摘要翻译： 本发明提供一种磁控管溅射法和磁控管溅射装置，其可以显着地减少导致靶的表面上的异常放电的非侵蚀区域和目标材料的沉积。 多个靶8A，8B，8C和8D设置在真空气氛中，同时彼此电独立; 通过在靶8A，8B，8C和8D附近产生磁控管放电来进行溅射。在溅射期间，将相位差为180度的电压交替施加到相邻靶8A，8B ，8C和8D。
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公开(公告)号：US07033461B2
公开(公告)日：2006-04-25
申请号：US10284287
申请日：2002-10-31
申请人： Noriaki Tani , Toshihiro Suzuki , Satoshi Ikeda , Hiroaki Kawamura , Satoru Ishibashi , Kouichi Hanzawa , Takafumi Matsumoto
发明人： Noriaki Tani , Toshihiro Suzuki , Satoshi Ikeda , Hiroaki Kawamura , Satoru Ishibashi , Kouichi Hanzawa , Takafumi Matsumoto
CPC分类号： C23C14/044 , C23C14/545
摘要： The present invention provides an efficient thin film forming apparatus which is capable of correcting a film thickness so as to take care of a variation in distribution in the film thickness and to take care of the circumferential distribution of the film thickness, as well as a method for forming a thin film using this film forming apparatus. The method comprises the first step of first forming a thin film to a predetermined percentage out of thickness through an opening 8a in a shutter 8, the second step of then using a film thickness monitor 10 to measure the distribution of the thickness of the thin film formed in the first step, and the third step of reducing a film formation rate by an opening 8b in the shutter 8 between a substrate 4 and a sputtering cathode 6 as compared to that of the first step and correcting the thickness of the thin film by an opening 13a in the first film thickness correcting plate 13 between the substrate 4 and the sputtering cathode 6 corresponding to the distribution of the film thickness measured by the film thickness monitor 10 in the second step. Then, the second step is carried out again, during which the film thickness monitor 10 is used to measure the distribution of the thickness of the thin film formed in the third step. Further, the third and second steps are repeatedly carried out.
摘要翻译： 本发明提供了一种有效的薄膜形成装置，该薄膜形成装置能够校正膜厚度，以便保证薄膜厚度分布的变化，并且能够保证薄膜厚度的周向分布，以及方法 用于使用该成膜装置形成薄膜。 该方法包括首先通过快门8中的开口8a将薄膜首先形成预定百分比的厚度的第一步骤，然后使用薄膜厚度监测器10来测量薄膜厚度的分布的第二步骤 在第一步骤中形成的薄膜，以及第三步骤，通过与第一步骤相比在基板4和溅射阴极6之间的快门8中的开口8b降低成膜速率，并且校正薄膜的厚度 在第二步骤中，由基板4和溅射阴极6之间的第一膜厚校正板13的开口部分13a对应于由膜厚度监视器10测量的膜厚度的分布。 然后，再次进行第二步骤，在此期间，膜厚度监测器10用于测量在第三步骤中形成的薄膜的厚度分布。 此外，重复执行第三和第二步骤。
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公开(公告)号：US4832810A
公开(公告)日：1989-05-23
申请号：US70441
申请日：1987-07-07
申请人： Kyuzo Nakamura , Yoshifumi Ota , Taiki Yamada , Michio Ishikawa , Noriaki Tani , Yasushi Higuchi
发明人： Kyuzo Nakamura , Yoshifumi Ota , Taiki Yamada , Michio Ishikawa , Noriaki Tani , Yasushi Higuchi
CPC分类号： C23C14/3414 , C22F1/10
摘要： A Co-based alloy sputter target comprising a f.c.c. phase and a h.c.p. phase, wherein the value of th ratio of X-ray diffraction peak intensity, I.sub.fcc(200) /I.sub.hcp(101), is smaller than the value of the same ratio in a Co-based alloy obtained by cooling a Co-based alloy having a f.c.c. single phase to room temperature from the high temperature at which it is in a melted state.The target is manufactured by subjecting to cold-working treatment a Co-based alloy obtained by cooling a Co-based alloy material having a f.c.c. single phase from its melting temperature.
摘要翻译： 一种Co基合金溅射靶，其包括直角 相和h.c. 相，其中X射线衍射峰强度值Ifcc（200）/ Ihcp（101）的th值小于通过冷却具有第一相的Co基合金获得的Co基合金中相同比例的值， 一个fcc 从处于熔融状态的高温到单相至室温。 目标是通过对通过冷却具有直角角度的Co基合金材料获得的Co基合金进行冷加工处理来制造的。 单相从其熔融温度。
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公开(公告)号：US20120055788A1
公开(公告)日：2012-03-08
申请号：US13297920
申请日：2011-11-16
CPC分类号： C23C14/3414 , C23C14/086 , C23C14/5806
摘要： A transparent electroconductive film having a low resistivity is provided. In a film-forming method of the present invention, a transparent electroconductive film is formed on a surface of a substrate by sputtering, in a vacuum atmosphere, a target in which ZnO is a main component and Al2O3 and TiO2 are added to ZnO, and then the transparent electroconductive film is annealed by the heating thereof at a temperature of 250° C. or more and 400° C. or less. The resistivity of the obtained transparent electroconductive film is reduced because the film has ZnO as the main component and Al and Ti added therein. The transparent electroconductive film formed by the present invention is suitable as a transparent electrode for the FDP, etc.
摘要翻译： 提供具有低电阻率的透明导电膜。 在本发明的成膜方法中，在真空气氛中，通过溅射在基板的表面上形成透明导电膜，其中ZnO作为主要成分，并将Al 2 O 3和TiO 2加入到ZnO中， 然后通过在250℃以上且400℃以下的温度下的加热对透明导电膜进行退火。 所得到的透明导电膜的电阻率降低，因为膜以ZnO为主要成分，并添加了Al和Ti。 由本发明形成的透明导电膜适合作为FDP等的透明电极。
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公开(公告)号：US20090134014A1
公开(公告)日：2009-05-28
申请号：US12359694
申请日：2009-01-26
IPC分类号： C23C14/34
CPC分类号： C23C14/086 , C01G9/00 , C01G9/02 , C01P2002/50 , C01P2004/62 , C01P2006/40 , C01P2006/60 , C23C14/3414
摘要： A transparent electroconductive film having a low resistivity is provided. In a film-forming method of the present invention, a transparent electroconductive film is formed on a surface of a substrate by sputtering, in a vacuum atmosphere, a target in which ZnO is a main component and Al2O3 and B2O3 are added, and then the transparent electroconductive film is annealed by the heating thereof at a temperature of 300° C. or more and 400° C. or less. The resistivity of the obtained transparent electroconductive film is reduced because the film has ZnO as the main component and Al and B added thereto. The transparent electroconductive film formed by the present invention is suitable as a transparent electrode for the FDP, etc.
摘要翻译： 提供具有低电阻率的透明导电膜。 在本发明的成膜方法中，在真空气氛中，通过溅射在基板的表面上形成透明导电膜，其中添加有ZnO作为主要成分并添加Al2O3和B2O3的靶，然后， 透明导电膜通过在300℃以上且400℃以下的温度下的加热进行退火。 所得到的透明导电膜的电阻率降低，因为膜以ZnO为主要成分，并添加了Al和B。 由本发明形成的透明导电膜适合作为FDP等的透明电极。
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公开(公告)号：US20090058265A1
公开(公告)日：2009-03-05
申请号：US12245113
申请日：2008-10-03
IPC分类号： H01J1/62
CPC分类号： C09K11/565 , H01L27/3267 , H05B33/14
摘要： A display device which can be driven by a thin-film transistor and has a high brightness is provided. A low-voltage-driven inorganic luminescent layer and a control transistor are formed on a substrate. The voltage which is applied to the inorganic luminescent layer is controlled by the control transistor. The inorganic luminescent layer has such strength against heat and any damage such that the inorganic luminescent layer can be formed by sputtering method. A top-emission type display device and a bottom-emission type display device can be formed on the same substrate and the luminescent light can be emitted from the same position.
摘要翻译： 提供了可以由薄膜晶体管驱动并且具有高亮度的显示装置。 在基板上形成低压驱动的无机发光层和控制晶体管。 施加到无机发光层的电压由控制晶体管控制。 无机发光层具有抗热的能力和任何可通过溅射法形成无机发光层的损伤。 顶部发光型显示装置和底部发光型显示装置可以形成在同一基板上，并且可以从同一位置发射发光。
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公开(公告)号：US5250339A
公开(公告)日：1993-10-05
申请号：US940753
申请日：1992-09-08
CPC分类号： G11B5/7325 , G11B5/66 , G11B5/72 , Y10S428/90 , Y10T428/12826 , Y10T428/265
摘要： A magnetic recording medium suitable for high-density recording which comprises a non-magnetic substrate disk, at least one magnetic layer and at least one protective layer, the magnetic layer and the protective layer being formed in succession on the non-magnetic substrate disk, wherein the non-magnetic substrate disk comprises a glass substrate and at least one non-magnetic metallic film provided on the glass substrate, and the non-magnetic metallic film is provided on a surface thereof with a multitude of fine concentric grooves.
摘要翻译： 一种适用于高密度记录的磁记录介质，包括非磁性基板盘，至少一个磁性层和至少一个保护层，所述磁性层和保护层依次形成在非磁性基板盘上， 其中所述非磁性基板盘包括玻璃基板和设置在所述玻璃基板上的至少一个非磁性金属膜，并且所述非磁性金属膜在其表面上设置有多个细小的同心凹槽。
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