公开(公告)号：US09399228B2

公开(公告)日：2016-07-26

申请号：US13760686

申请日：2013-02-06

Applicant: Novellus Systems, Inc.

Inventor： Patrick Breiling ,  Kevin Gerber ,  Jennifer O'Loughlin ,  Nagraj Shankar ,  Pramod Subramonium

IPC: B05B1/00 ,  C23C16/44 ,  C23C16/455 ,  C30B25/14 ,  B05B7/22 ,  H01J37/32 ,  C23C16/50 ,  B05B1/18

CPC classification number: B05B1/005 ,  B05B1/18 ,  B05B7/22 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/45536 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/45591 ,  C23C16/50 ,  C30B25/14 ,  H01J37/3244 ,  H01J37/32633 ,  Y10T29/49826

Abstract: A substrate processing system includes a showerhead that comprises a head portion and a stem portion and that delivers precursor gas to a processing chamber. A baffle includes a base portion having an outer diameter that is greater than an outer diameter of the head portion of the showerhead, that comprises a dielectric material and that is arranged between the head portion of the showerhead and an upper surface of the processing chamber.

Abstract translation: 衬底处理系统包括一个喷头，其包括头部和杆部分，并且将前体气体输送到处理室。 挡板包括具有大于喷头的头部的外径的外径的基部，其包括电介质材料，并且布置在喷头的头部和处理室的上表面之间。

公开(公告)号：US20140217193A1

公开(公告)日：2014-08-07

申请号：US13760686

申请日：2013-02-06

Applicant: NOVELLUS SYSTEMS, INC.

Inventor： Patrick Breiling ,  Kevin Gerber ,  Jennifer O'Loughlin ,  Nagraj Shankar ,  Pramod Subramonium

IPC: B05B1/00

CPC classification number: B05B1/005 ,  B05B1/18 ,  B05B7/22 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/45536 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/45591 ,  C23C16/50 ,  C30B25/14 ,  H01J37/3244 ,  H01J37/32633 ,  Y10T29/49826

Abstract: A substrate processing system includes a showerhead that comprises a head portion and a stem portion and that delivers precursor gas to a processing chamber. A baffle includes a base portion having an outer diameter that is greater than an outer diameter of the head portion of the showerhead, that comprises a dielectric material and that is arranged between the head portion of the showerhead and an upper surface of the processing chamber.

Abstract translation: 衬底处理系统包括一个喷头，其包括头部和杆部分，并且将前体气体输送到处理室。 挡板包括具有大于喷头的头部的外径的外径的基部，其包括电介质材料，并且布置在喷头的头部和处理室的上表面之间。

公开(公告)号：US09028924B2

公开(公告)日：2015-05-12

申请号：US13671424

申请日：2012-11-07

Applicant: Novellus Systems, Inc.

Inventor： Jason Haverkamp ,  Pramod Subramonium ,  Joe Womack ,  Dong Niu ,  Keith Fox ,  John Alexy ,  Patrick Breiling ,  Jennifer O'Loughlin ,  Mandyam Sriram ,  George Andrew Antonelli ,  Bart van Schravendijk

IPC: H05H1/24 ,  H01L21/02 ,  C23C16/24 ,  C23C16/34 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  C23C16/54

CPC classification number: H01L21/0234 ,  C23C16/24 ,  C23C16/345 ,  C23C16/402 ,  C23C16/4401 ,  C23C16/45523 ,  C23C16/509 ,  C23C16/54 ,  H01L21/02123 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274

Abstract: Methods of forming a film stack may include the plasma accelerated deposition of a silicon nitride film formed from the reaction of nitrogen containing precursor with silicon containing precursor, the plasma accelerated substantial elimination of silicon containing precursor from the processing chamber, the plasma accelerated deposition of a silicon oxide film atop the silicon nitride film formed from the reaction of silicon containing precursor with oxidant, and the plasma accelerated substantial elimination of oxidant from the processing chamber. Process station apparatuses for forming a film stack of silicon nitride and silicon oxide films may include a processing chamber, one or more gas delivery lines, one or more RF generators, and a system controller having machine-readable media with instructions for operating the one or more gas delivery lines, and the one or more RF generators.

Abstract translation: 形成薄膜叠层的方法可以包括由含氮前体与含硅前体的反应形成的氮化硅薄膜的等离子体加速沉积，等离子体加速从处理室中大量消除含硅前体，等离子体加速沉积 在由含硅前体与氧化剂的反应形成的氮化硅膜顶上的氧化硅膜，等离子体加速了处理室中氧化剂的显着消除。 用于形成氮化硅和氧化硅膜的膜堆的处理站装置可以包括处理室，一个或多个气体输送管线，一个或多个RF发生器和具有机器可读介质的系统控制器，所述机器可读介质具有用于操作所述一个或多个 更多的气体输送管线和一个或多个RF发生器。