Abstract:
A method for synthesizing a copper-silver alloy includes an ink preparation step, a coating step, a crystal nucleus formation step and a crystal nucleus synthesis step. In the ink preparation step, a copper salt particle, an amine-based solvent, and a silver salt particle are mixed, thereby preparing a copper-silver ink. In the coating step, a member to be coated is coated with the copper-silver ink. In the crystal nucleus formation step, at least one of a crystal nucleus of copper having a crystal grain diameter of 0.2 μm or less and a crystal nucleus of silver having a crystal grain diameter of 0.2 μm or less is formed from the copper-silver ink. In the crystal nucleus synthesis step, the crystal nucleus of copper and the crystal nucleus of silver are synthesized.
Abstract:
A method for synthesizing a copper-silver alloy includes an ink preparation step, a coating step, a crystal nucleus formation step and a crystal nucleus synthesis step. In the ink preparation step, a copper salt particle, an amine-based solvent, and a silver salt particle are mixed, thereby preparing a copper-silver ink. In the coating step, a member to be coated is coated with the copper-silver ink. In the crystal nucleus formation step, at least one of a crystal nucleus of copper having a crystal grain diameter of 0.2 μm or less and a crystal nucleus of silver having a crystal grain diameter of 0.2 μm or less is formed from the copper-silver ink. In the crystal nucleus synthesis step, the crystal nucleus of copper and the crystal nucleus of silver are synthesized.
Abstract:
An method of mounting electronic component includes: providing a connecting layer between a wiring and an electronic component, the connecting layer including a conductive layer formed of a solder powder-containing resin composition containing thermosetting resin, solder powder, and a reducing agent and one or two layers of a thermoplastic resin layer formed of thermoplastic resin; and electrically connecting the electronic component to the wiring through the connecting layer.
Abstract:
A metal sintered bonding body bonds a substrate and a die. In the metal sintered bonding body, at least a center part and corner part of a rectangular region where the metal sintered bonding body faces the die have a low-porosity region whose porosity is lower than an average porosity of the rectangular region. The low-porosity region is located within a strip-shaped region whose central lines are diagonal lines of the rectangular region.
Abstract:
A solder joint in which an electronic component with a back metal is bonded to a substrate by a solder alloy. The solder alloy includes: a solder alloy layer having an alloy composition consisting of, in mass %: Ag: 2 to 4%, Cu: 0.6 to 2%, Sb: 9.0 to 12%, Ni: 0.005 to 1%, optionally Co: 0.2% or less and Fe: 0.1% or less, with the balance being Sn; an Sn—Sb intermetallic compound phase; a back metal-side intermetallic compound layer formed at an interface between the back metal and the solder alloy; and a substrate-side intermetallic compound layer formed at an interface between the substrate and the solder alloy. The solder alloy layer exists at least one of between the Sn—Sb intermetallic compound phase and the back metal-side intermetallic compound layer, and between the Sn—Sb intermetallic compound phase and the substrate-side intermetallic compound layer.
Abstract:
Provided is a solder alloy having a composition suitable for soldering a module obtained by joining an aluminum substrate to a component wherein a main body, in which the area of an electrode on a side surface is not more than 30% of the total area of the side surface, is comprised of a ceramic. The solder alloy has an alloy composition comprising, in terms of mass %, 3-10% of Sb, 0-40 of Ag and 0.3-1.2% of Cu, with the remainder consisting of Sn. Furthermore, the alloy composition may contain, in terms of mass %, a total of 0.15% or less of one or more elements selected from among Ni and Co and/or a total of 0.02% or less of one or more elements selected from among P and Ge.
Abstract:
The melting of die-bonding solder material is prevented even when soldering a surface-mount component formed using the die-bonding solder material on a printed circuit board using a mounting solder material. The surface-mount component formed using (Sn—Sb)-based solder material having high melting point as the solder material for die pad, the (Sn—Sb)-based solder material containing Cu not more than a predetermined quantity of Cu constituent and a main ingredient thereof being Sn, is soldered on a board terminal portion of a circuit board using (Sn—Ag—Cu—Bi)-based solder material as the mounting solder material with the solder material being applied on the terminal portion. The melting of die-bonding solder material is prevented even at the heating temperature (240 degrees C. or less) of a reflow furnace.