公开(公告)号：US11316077B2

公开(公告)日：2022-04-26

申请号：US16480732

申请日：2018-01-25

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Britta Göötz ,  Norwin von Malm

IPC: H01L33/50 ,  H01L33/60 ,  H01L51/52 ,  H01L51/50 ,  H01L33/10

Abstract: A radiation-emitting device includes a semiconductor layer sequence having an active layer that emits a primary radiation during operation, a decoupling surface on a surface of the semiconductor layer sequence, a wavelength conversion layer on a side of the semiconductor layer sequence facing away from the decoupling surface, containing at least one conversion material that converts the primary radiation into secondary radiation, and a mirror layer on the side of the wavelength conversion layer facing away from the semiconductor layer sequence, wherein the at least one conversion material is electrically conductive and/or embedded in an electrically conductive matrix material.

公开(公告)号：US20200091372A1

公开(公告)日：2020-03-19

申请号：US16466658

申请日：2017-12-15

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Andreas Plössl ,  Norwin von Malm ,  Dominik Scholz ,  Christoph Schwarzmaier ,  Martin Rudolf Behringer ,  Alexander F. Pfeuffer

IPC: H01L33/00

Abstract: A method of producing a semiconductor component includes applying an auxiliary carrier at a first side of a semiconductor body, the auxiliary carrier having a first lateral coefficient of thermal expansion, and applying a connection carrier at a second side of the semiconductor body facing away from the auxiliary carrier, the connection carrier having a second lateral coefficient of thermal expansion, wherein the semiconductor body is grown on a growth substrate different from the auxiliary carrier, the first and the second lateral coefficient of thermal expansion differ by at most 50%, and the growth substrate is removed prior to application of the auxiliary carrier.

公开(公告)号：US20200058630A1

公开(公告)日：2020-02-20

申请号：US16486559

申请日：2018-03-06

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Norwin von Malm ,  Andreas PIössl

IPC: H01L25/16 ,  H01L23/00 ,  H01L25/075 ,  H01L33/40 ,  H01L33/62 ,  H01L33/56 ,  H01L33/00

Abstract: A method of manufacturing an optoelectronic component includes: A) providing a sub-strate, B) providing a metallic liquid arranged in a structured manner and in direct mechanical contact on the substrate and including at least one first metal, C) providing semiconductor chips each having a metallic termination layer on their rear side, the metallic termination layer including at least one second metal different from the first metal, and D) self-organized arranging the semiconductor chips on the metallic liquid so that the first metal and the second metal form at least one intermetallic compound having a higher re-melting temperature than the melting temperature of the metallic liquid, wherein the intermetallic compound is a connecting layer between the substrate and the semiconductor chips.

公开(公告)号：US20190355880A1

公开(公告)日：2019-11-21

申请号：US16413490

申请日：2019-05-15

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Britta Göötz ,  Norwin von Malm

IPC: H01L33/50 ,  H01L33/60 ,  H01L27/15

Abstract: An optoelectronic semiconductor device and a method for manufacturing an optoelectronic semiconductor device are disclosed. In an embodiment, an optoelectronic semiconductor device includes a semiconductor body having an active region configured to generate electromagnetic radiation and a coupling-out surface along a main radiation direction, and a wavelength conversion element having conversion regions, the conversion regions optically separated from one another by metallic separators, wherein the wavelength conversion element is arranged downstream of the semiconductor body in the main radiation direction of the active region, wherein the active region comprises a plurality of independently controllable emission regions, and wherein the emission regions are at least partially aligned with the conversion regions and explicitly assigned to the conversion regions.

公开(公告)号：US20190312184A1

公开(公告)日：2019-10-10

申请号：US16335632

申请日：2017-10-25

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Isabel Otto ,  Alexander F. Pfeuffer ,  Britta Göötz ,  Norwin von Malm

IPC: H01L33/50 ,  H01L27/15

Abstract: A method of producing optoelectronic semiconductor components including providing a primary light source having a carrier and a semiconductor layer sequence mounted thereon that generates primary light (B), wherein the semiconductor layer sequence is structured into a plurality of pixels that can be driven electrically independently of each other, and the carrier includes a plurality of control units that drive the pixels, providing at least one conversion unit adapted to convert the primary light (B) into at least one secondary light (G, R), wherein the conversion unit is grown continuously from at least one semiconductor material, structuring the conversion unit, wherein portions of the semiconductor material are removed in accordance with the pixels, and applying the conversion unit to the semiconductor layer sequence so that the remaining semiconductor material is uniquely assigned to a portion of the pixels.

公开(公告)号：US10312413B2

公开(公告)日：2019-06-04

申请号：US15542935

申请日：2015-12-01

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Lutz Hoeppel ,  Norwin von Malm

IPC: H01L33/38 ,  H01L33/48 ,  H01L33/62

Abstract: A component with a semiconductor body, a first metal layer and a second metal layer is disclosed. The first metal layer is arranged between the semiconductor body and the second metal layer. The semiconductor body has a first semiconductor layer, a second semiconductor layer, and an active layer. The component has a plated-through hole, which extends through the second semiconductor layer and the active layer for the electrical contacting of the first semiconductor layer. The second metal layer has a first subregion, and a second subregion, spaced apart laterally from the first subregion by an intermediate space. The first subregion is electrically connected to the plated-through hole and is assigned to a first electrical polarity of the component. In plan view, the first metal layer laterally completely bridges the intermediate space and is assigned to a second electrical polarity of the component which differs from the first electrical polarity.

公开(公告)号：US20180358512A1

公开(公告)日：2018-12-13

申请号：US15542935

申请日：2015-12-01

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Lutz Hoeppel ,  Norwin von Malm

IPC: H01L33/38 ,  H01L33/62 ,  H01L33/48

CPC classification number: H01L33/382 ,  H01L33/486 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0066

Abstract: A component with a semiconductor body, a first metal layer and a second metal layer is disclosed. The first metal layer is arranged between the semiconductor body and the second metal layer. The semiconductor body has a first semiconductor layer, a second semiconductor layer, and an active layer. The component has a plated-through hole, which extends through the second semiconductor layer and the active layer for the electrical contacting of the first semiconductor layer. The second metal layer has a first subregion, and a second subregion, spaced apart laterally from the first subregion by an intermediate space. The first subregion is electrically connected to the plated-through hole and is assigned to a first electrical polarity of the component. In plan view, the first metal layer laterally completely bridges the intermediate space and is assigned to a second electrical polarity of the component which differs from the first electrical polarity.

公开(公告)号：US09917230B2

公开(公告)日：2018-03-13

申请号：US15315376

申请日：2015-06-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alexander F. Pfeuffer ,  Norwin von Malm

IPC: H01L29/49 ,  H01L33/38 ,  H01L33/22 ,  H01L33/40 ,  H01L33/46

CPC classification number: H01L33/382 ,  H01L33/22 ,  H01L33/387 ,  H01L33/405 ,  H01L33/46

Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the chip includes a semiconductor layer sequence having a bottom face and a top face, wherein the semiconductor layer sequence comprises a first layer of a first conductivity type, an active layer for generating electromagnetic radiation, and a second layer of a second conductivity type and a bottom contact element located at the bottom face and a top contact element located at the top face for injecting current into the semiconductor layer sequence. The chip further includes a current distribution element located at the bottom face, the current distribution element distributes current along the bottom face during operation and a plurality of vias extending from the current distribution element through the first layer and through the active layer into the semiconductor layer sequence, wherein the vias are not in direct electrical contact with the active layer.

公开(公告)号：US20150097198A1

公开(公告)日：2015-04-09

申请号：US14385116

申请日：2013-02-20

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Stefan Illek ,  Matthias Sabathil ,  Alexander Linkov ,  Thomas Bleicher ,  Norwin von Malm ,  Wolfgang Mönch

IPC: H01L33/58 ,  H01L33/64 ,  H01L33/54 ,  H01L33/60 ,  H01L25/075 ,  H01L33/50

CPC classification number: H01L33/58 ,  F21Y2101/00 ,  F21Y2105/00 ,  F21Y2115/10 ,  G02B6/0015 ,  G02B6/0018 ,  G02B6/0025 ,  G02F1/133603 ,  G02F1/133605 ,  G02F1/133606 ,  G02F1/133611 ,  G02F1/133615 ,  G02F2001/133607 ,  H01L25/0753 ,  H01L33/44 ,  H01L33/507 ,  H01L33/54 ,  H01L33/60 ,  H01L33/644 ,  H01L2924/0002 ,  H01L2933/0091 ,  H01L2924/00

Abstract: In at least one embodiment, a surface light source includes one or a more optoelectronic semiconductor chips having a radiation main side for generating a primary radiation. A scattering body is disposed downstream of the radiation main side along a main emission direction of the semiconductor chips. The scatting body is designed for scattering the primary radiation. A main emission direction of the scattering body is oriented obliquely with respect to the main emission direction of the semiconductor chip.

Abstract translation: 在至少一个实施例中，表面光源包括具有用于产生主辐射的辐射主侧的一个或多个光电子半导体芯片。 散射体沿着半导体芯片的主发射方向设置在辐射主侧的下游。 散粒体设计用于散射初级辐射。 散射体的主发射方向相对于半导体芯片的主发射方向倾斜取向。

公开(公告)号：US20140319547A1

公开(公告)日：2014-10-30

申请号：US14364099

申请日：2012-11-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Patrick Rode ,  Lutz Hoeppel ,  Norwin von Malm ,  Stefan Illek ,  Albrecht Kieslich ,  Siegfried Herrmann

IPC: H01L31/18 ,  H01L33/00

CPC classification number: H01L31/1876 ,  H01L33/005 ,  H01L33/36 ,  H01L33/382 ,  H01L2933/0016

Abstract: A method of producing a plurality of optoelectronic semiconductor chips includes a) providing a layer composite assembly having a principal plane which delimits the layer composite assembly in a vertical direction, and includes a semiconductor layer sequence having an active region that generates and/or detects radiation, wherein a plurality of recesses extending from the principal plane in a direction of the active region are formed in the layer composite assembly; b) forming a planarization layer on the principal plane such that the recesses are at least partly filled with material of the planarization layer; c) at least regionally removing material of the planarization layer to level the planarization layer; and d) completing the semiconductor chips, wherein for each semiconductor chip at least one semiconductor body emerges from the semiconductor layer sequence.

Abstract translation: 一种制造多个光电子半导体芯片的方法包括：a）提供具有在垂直方向上限定层复合组件的主平面的层复合组件，并且包括具有产生和/或检测辐射的有源区的半导体层序列 其特征在于，在所述层复合组件中形成有从所述主面向所述有源区的方向延伸的多个凹部， b）在所述主平面上形成平坦化层，使得所述凹部至少部分地被所述平坦化层的材料填充; c）至少在区域上去除平坦化层的材料以平整平坦化层; 以及d）完成半导体芯片，其中对于每个半导体芯片，至少一个半导体体从半导体层序列中排出。