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公开(公告)号：US20170310081A1
公开(公告)日：2017-10-26
申请号：US15649437
申请日：2017-07-13
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Christian Lauer , Harald König , Uwe Strauss , Alexander Bachmann
CPC classification number: H01S5/02469 , H01S5/0224 , H01S5/024 , H01S5/02461 , H01S5/0425 , H01S5/10 , H01S5/1064 , H01S5/2036 , H01S5/2054
Abstract: A semiconductor laser diode is provided. In an embodiment the semiconductor laser diode includes a semiconductor layer sequence having semiconductor layers disposed vertically one above the other. An active layer includes an active region having a width of greater than or equal to 30 μm emitting laser radiation during operation via a radiation coupling-out surface. The radiation coupling-out surface is formed by a lateral surface of the semiconductor layer sequence and forms, with an opposite rear surface, a resonator having lateral gain-guiding in a longitudinal direction. The semiconductor layer sequence is heated in a thermal region of influence by reason of the operation. A metallization layer is in direct contact with a top side of the semiconductor layer sequence.
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公开(公告)号：US09356423B2
公开(公告)日：2016-05-31
申请号：US14496975
申请日：2014-09-25
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Uwe Strauss , Soenke Tautz , Alfred Lell , Karsten Auen , Clemens Vierheilig
CPC classification number: H01S5/02272 , H01S5/022 , H01S5/02212 , H01S5/02469 , H01S5/02476 , H01S5/0282 , H01S5/32341 , H01S2301/176
Abstract: A laser diode assembly includes a housing having a housing part and a mounting part that is connected to the housing part and that extends away from the housing part along an extension direction. A laser diode chip is disposed on the mounting part. The laser diode chip has, on a substrate, semiconductor layers with an active layer for emitting light. The housing part and the mounting part have a main body composed of copper and at least the housing part is steel-sheathed. A first solder layer having a thickness of greater than or equal to 3 μm is arranged between the laser diode chip and the mounting part.
Abstract translation: 激光二极管组件包括壳体，壳体具有壳体部分和连接到壳体部分并且沿着延伸方向远离壳体部分延伸的安装部分。 激光二极管芯片设置在安装部分上。 激光二极管芯片在衬底上具有用于发光的有源层的半导体层。 壳体部分和安装部分具有由铜构成的主体，并且至少壳体部分是钢包覆的。 在激光二极管芯片和安装部件之间布置有厚度大于或等于3μm的第一焊料层。
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公开(公告)号：US09008138B2
公开(公告)日：2015-04-14
申请号：US13859446
申请日：2013-04-09
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Uwe Strauss , Soenke Tautz , Alfred Lell , Clemens Vierheilig
CPC classification number: H01S5/02236 , H01S5/02268 , H01S5/02272 , H01S5/02461 , H01S5/02469 , H01S5/028 , H01S5/22 , H01S2301/176
Abstract: A laser diode device is specified, comprising a housing having a mounting part and a laser diode chip based on a nitride compound semiconductor material in the housing on the mounting part, wherein the laser diode chip is mounted directly on the mounting part using a solder layer, and the solder layer has a thickness of greater than or equal to 3 μm.
Abstract translation: 一种激光二极管装置，其特征在于，包括具有安装部的壳体和基于安装部上的壳体中的氮化物化合物半导体材料的激光二极管芯片，其中，使用焊料层将激光二极管芯片直接安装在安装部上 焊料层的厚度大于或等于3μm。
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公开(公告)号：US09202971B2
公开(公告)日：2015-12-01
申请号：US14535044
申请日：2014-11-06
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： Adrian Avramescu , Désirée Queren , Christoph Eichler , Matthias Sabathil , Stephan Lutgen , Uwe Strauss
CPC classification number: H01L33/06 , B82Y20/00 , H01L33/32 , H01L2924/0002 , H01S5/3407 , H01S5/3425 , H01S5/34333 , H01S2301/173 , Y10S977/95 , Y10S977/951 , H01L2924/00
Abstract: An optoelectronic semiconductor chip, based on a nitride material system, comprising at least one active quantum well, wherein during operation electromagnetic radiation is generated in the active quantum well, the active quantum well comprises N successive zones in a direction parallel to a growth direction z of the semiconductor chip, N being a natural number greater than or equal to 2, the zones are numbered consecutively in a direction parallel to the growth direction z, at least two of the zones have average aluminium contents k which differ from one another, and the active quantum well fulfils the condition: 50≦∫(35−k(z))dz−2.5N−1.5∫dz≦120.
Abstract translation: 一种基于氮化物材料系统的光电子半导体芯片，包括至少一个有源量子阱，其中在操作期间在有源量子阱中产生电磁辐射，有源量子阱在平行于生长方向z的方向上包括N个连续的区域 的半导体芯片的N是大于或等于2的自然数，这些区域在与生长方向z平行的方向上连续编号，至少两个区域具有彼此不同的平均铝含量k， 有效量子阱满足条件：50＆nlE;∫（35-k（z））dz-2.5N-1.5∫dz＆nlE; 120。
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公开(公告)号：US20150288138A1
公开(公告)日：2015-10-08
申请号：US14496975
申请日：2014-09-25
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Uwe Strauss , Soenke Tautz , Alfred Lell , Karsten Auen , Clemens Vierheilig
CPC classification number: H01S5/02272 , H01S5/022 , H01S5/02212 , H01S5/02469 , H01S5/02476 , H01S5/0282 , H01S5/32341 , H01S2301/176
Abstract: A laser diode assembly includes a housing having a housing part and a mounting part that is connected to the housing part and that extends away from the housing part along an extension direction. A laser diode chip is disposed on the mounting part. The laser diode chip has, on a substrate, semiconductor layers with an active layer for emitting light. The housing part and the mounting part have a main body composed of copper and at least the housing part is steel-sheathed. A first solder layer having a thickness of greater than or equal to 3 μm is arranged between the laser diode chip and the mounting part.
Abstract translation: 激光二极管组件包括壳体，壳体具有壳体部分和连接到壳体部分并且沿着延伸方向远离壳体部分延伸的安装部分。 激光二极管芯片设置在安装部分上。 激光二极管芯片在衬底上具有用于发光的有源层的半导体层。 壳体部分和安装部分具有由铜构成的主体，并且至少壳体部分是钢包覆的。 在激光二极管芯片和安装部件之间布置有厚度大于或等于3μm的第一焊料层。
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Patent Agency Ranking
公开(公告)号：US08867582B2
公开(公告)日：2014-10-21
申请号：US13857100
申请日：2013-04-04
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Uwe Strauss , Soenke Tautz , Alfred Lell , Karsten Auen , Clemens Vierheilig
CPC classification number: H01S5/02272 , H01S5/022 , H01S5/02212 , H01S5/02469 , H01S5/02476 , H01S5/0282 , H01S5/32341 , H01S2301/176
Abstract: A laser diode assembly includes a housing having a housing part and a mounting part that is connected to the housing part and that extends away from the housing part along an extension direction. A laser diode chip is disposed on the mounting part. The laser diode chip has, on a substrate, semiconductor layers with an active layer for emitting light. The housing part and the mounting part have a main body composed of copper and at least the housing part is steel-sheathed. A first solder layer having a thickness of greater than or equal to 3 μm is arranged between the laser diode chip and the mounting part.
Abstract translation: 激光二极管组件包括壳体，壳体具有壳体部分和连接到壳体部分并且沿着延伸方向远离壳体部分延伸的安装部分。 激光二极管芯片设置在安装部分上。 激光二极管芯片在衬底上具有用于发光的有源层的半导体层。 壳体部分和安装部分具有由铜构成的主体，并且至少壳体部分是钢包覆的。 在激光二极管芯片和安装部件之间布置有厚度大于或等于3μm的第一焊料层。
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公开(公告)号：US20130272329A1
公开(公告)日：2013-10-17
申请号：US13862787
申请日：2013-04-15
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： Karsten Auen , Uwe Strauss , Thomas Höfer
IPC: H01S5/024
CPC classification number: H01S5/024 , H01L2224/48091 , H01S5/005 , H01S5/0071 , H01S5/02216 , H01S5/02248 , H01S5/02296 , H01S5/02469 , H01S5/42 , H01L2924/00014
Abstract: A laser diode device including a housing having a mounting area in a cavity of the housing, at least one laser diode chip that emits electromagnetic radiation through a radiation exit area during operation, at least one covering element which is transmissive, at least in places, to the electromagnetic radiation generated by the laser diode chip during operation, and a deflection element, that directs at least part of the electromagnetic radiation generated by the laser diode chip during operation in a direction of the covering element, wherein the radiation exit area of the laser diode chip runs substantially transversely or substantially perpendicularly with respect to the mounting area and/or with respect to the covering element, the covering element connects to the housing, and the covering element tightly closes the housing.
Abstract translation: 一种激光二极管装置，其包括具有在壳体的空腔中的安装区域的壳体，至少一个激光二极管芯片，其在操作期间通过辐射出射区域发射电磁辐射;至少一个覆盖元件， 涉及在操作期间由激光二极管芯片产生的电磁辐射，以及偏转元件，其在操作期间引导由激光二极管芯片在覆盖元件的方向上产生的电磁辐射的至少一部分，其中辐射出射区域 激光二极管芯片相对于安装区域和/或相对于覆盖元件基本上横向或基本上垂直地延伸，覆盖元件连接到壳体，并且覆盖元件紧密地关闭壳体。
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公开(公告)号：US09461438B2
公开(公告)日：2016-10-04
申请号：US14884500
申请日：2015-10-15
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Uwe Strauss , Markus Arzberger
IPC: H01L23/495 , H01S5/024 , H01S5/022 , H05K5/00 , H01L33/62
CPC classification number: H01S5/02244 , H01L23/495 , H01L33/62 , H01L2224/48091 , H01L2224/48465 , H01S5/02208 , H01S5/02216 , H01S5/02268 , H01S5/02276 , H01S5/02288 , H01S5/02296 , H01S5/024 , H01S5/02476 , H05K5/0091 , H01L2924/00014 , H01L2924/00
Abstract: A housing for an optoelectronic semiconductor component includes a housing body having a mounting plane and a leadframe with a first connection conductor and a second connection conductor. The housing body deforms the leadframe in some regions. The leadframe has a main extension plane which extends obliquely or perpendicularly with respect to the mounting plane. A semiconductor component having such a housing and a semiconductor chip and a method for producing a housing are also disclosed.
Abstract translation: 一种用于光电子半导体部件的壳体包括具有安装平面的壳体和具有第一连接导体和第二连接导体的引线框架。 壳体在一些区域使引线框变形。 引线框具有相对于安装平面倾斜或垂直延伸的主延伸平面。 还公开了一种具有这种外壳和半导体芯片的半导体元件及其制造方法。
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9.发明申请Method for Producing a Radiation-Emitting Component and Radiation-Emitting Component 审中-公开产生辐射发射元件和辐射发射元件的方法公开(公告)号：US20150207294A1
公开(公告)日：2015-07-23
申请号：US14672947
申请日：2015-03-30
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： Peter Brick , Uwe Strauss
IPC: H01S5/10
CPC classification number: H01S5/1082 , H01S5/0035 , H01S5/10 , H01S5/1017 , H01S5/204 , H01S5/3095 , H01S5/32 , H01S5/3215 , H01S5/4043 , H01S2301/18 , H01S2301/185 , H01S2301/206
Abstract: A method proposed for manufacturing a radiation-emitting component in which a field distribution of a near field in a direction perpendicular to a main emission axis of the component is specified. From the field distribution of the near field, an index of refraction profile along this direction is determined. A structure is determined for the component such that the component will have the previously determined index of refraction profile. The component is constructed according to the previously determined structure. A radiation-emitting component is also disclosed.
Abstract translation: 一种提出用于制造辐射发射部件的方法，其中规定了垂直于部件的主发射轴的方向上的近场的场分布。 根据近场的场分布，确定沿该方向的折射率曲线。 确定组件的结构，使得组件将具有先前确定的折射率曲线。 该组件根据先前确定的结构构造。 还公开了一种辐射发射元件。
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公开(公告)号：US20150063395A1
公开(公告)日：2015-03-05
申请号：US14535044
申请日：2014-11-06
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： Adrian AVRAMESCU , Désirée Queren , Christoph Eichler , Matthias Sabathil , Stephan Lutgen , Uwe Strauss
CPC classification number: H01L33/06 , B82Y20/00 , H01L33/32 , H01L2924/0002 , H01S5/3407 , H01S5/3425 , H01S5/34333 , H01S2301/173 , Y10S977/95 , Y10S977/951 , H01L2924/00
Abstract: An optoelectronic semiconductor chip, based on a nitride material system, comprising at least one active quantum well, wherein during operation electromagnetic radiation is generated in the active quantum well, the active quantum well comprises N successive zones in a direction parallel to a growth direction z of the semiconductor chip, N being a natural number greater than or equal to 2, the zones are numbered consecutively in a direction parallel to the growth direction z, at least two of the zones have average aluminium contents k which differ from one another, and the active quantum well fulfils the condition: 50≦∫(35−k(z))dz−2.5N−1.5∫dz≦120.
Abstract translation: 一种基于氮化物材料系统的光电子半导体芯片，包括至少一个有源量子阱，其中在操作期间在有源量子阱中产生电磁辐射，有源量子阱在平行于生长方向z的方向上包括N个连续的区域 的半导体芯片的N是大于或等于2的自然数，这些区域在与生长方向z平行的方向上连续编号，至少两个区域具有彼此不同的平均铝含量k， 有效量子阱满足条件：50＆nlE;∫（35-k（z））dz-2.5N-1.5∫dz＆nlE; 120。
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