公开(公告)号：US20180019373A1

公开(公告)日：2018-01-18

申请号：US15550008

申请日：2016-01-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Thomas LEHNHARDT ,  Martin MANDL

IPC: H01L33/08 ,  H01L33/24 ,  H01L27/15 ,  H01L33/14 ,  H01L33/50 ,  H01L33/38

CPC classification number: H01L33/08 ,  H01L27/153 ,  H01L33/14 ,  H01L33/24 ,  H01L33/38 ,  H01L33/50

Abstract: An optoelectronic semiconductor component is specified, comprising a multiplicity of radiation generating elements (14) arranged at a distance from one another on a surface (22) of a carrier element (20), wherein each of the radiation generating elements has a diameter of less than 10 μm in a direction perpendicular to the surface of the carrier element and adheres to the surface of the carrier element in the region of a respective connection location (26), and wherein the optoelectronic semiconductor component is free of a growth substrate (2).

公开(公告)号：US20180083160A1

公开(公告)日：2018-03-22

申请号：US15559409

申请日：2016-03-01

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Tobias MEYER ,  Thomas LEHNHARDT ,  Matthias PETER ,  Asako HIRAI ,  Juergen OFF ,  Philipp DRECHSEL ,  Peter STAUSS

IPC: H01L33/06 ,  H01S5/22 ,  H01S5/30 ,  H01S5/34 ,  H01S5/32

CPC classification number: H01L33/06 ,  H01L33/32 ,  H01S5/2228 ,  H01S5/309 ,  H01S5/3216 ,  H01S5/34

Abstract: The invention relates to a component (10) having a semiconductor layer sequence, which has a p-conducting semiconductor layer (1), an n-conducting semiconductor layer (2), and an active zone (3) arranged between the p-conducting semiconductor layer and the n-conducting semiconductor layer, wherein the active zone has a multiple quantum well structure, which, from the p-conducting semiconductor layer to the n-conducting semiconductor layer, has a plurality of p-side barrier layers (32p) having intermediate quantum well layers (31) and a plurality of n-side barrier layers (32n) having intermediate quantum layers (31). Recesses (4) having flanks are formed in the semiconductor layer sequence on the part of the p-conducting semiconductor layer, wherein the quantum well layers and/or the n- and p-side barrier layers extend in a manner conforming to the flanks of the recesses at least in regions. The interior barrier layers have a larger average layer thickness than the p-side barrier layers.

公开(公告)号：US20180175243A1

公开(公告)日：2018-06-21

申请号：US15579561

申请日：2016-06-15

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Tobias GOTSCHKE ,  Bastian GALLER ,  Juergen OFF ,  Werner BERGBAUER ,  Thomas LEHNHARDT

IPC: H01L33/22 ,  H01L33/00 ,  H01L33/12

CPC classification number: H01L33/22 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/12

Abstract: The invention relates to a method for producing a nitride semiconductor component (100), comprising the steps of: —providing a growth substrate (1) having a growth surface (10) formed from a planar area (11) with a plurality of three-dimensionally shaped surface structures (12) on said planar area (11), —growing a nitride-based semiconductor layer sequence (30) on the growth surface (10), growth beginning selectively on a growth area (13) of said growth substrate, and the growth area (13) being less than 45% of the growth surface (10). The invention also relates to a nitride semiconductor component (100) which can be produced according to said method.

公开(公告)号：US20170053795A1

公开(公告)日：2017-02-23

申请号：US15119703

申请日：2015-02-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Juergen OFF ,  Matthias PETER ,  Thomas LEHNHARDT ,  Werner BERGBAUER

IPC: H01L21/02 ,  C30B29/40 ,  C30B25/18

CPC classification number: H01L21/0254 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02645 ,  H01L21/02658

Abstract: Described is a method for producing a nitride compound semiconductor layer, involving the steps of:—depositing a first seed layer (1) comprising a nitride compound semiconductor material on a substrate (10);—desorbing at least some of the nitride compound semiconductor material in the first seed layer from the substrate (10);—depositing a second seed layer (2) comprising a nitride compound semiconductor material; and—growing the nitride compound semiconductor layer (3) containing a nitride compound semiconductor material onto the second seed layer (2).

Abstract translation: 描述了一种用于生产氮化物化合物半导体层的方法，包括以下步骤：在衬底（10）上沉积包含氮化物化合物半导体材料的第一晶种层（1）; - 将至少一些氮化物半导体材料 在来自所述衬底（10）的所述第一晶种层中; - 沉积包含氮化物半导体材料的第二晶种层（2）; 并且将含有氮化物化合物半导体材料的氮化物化合物半导体层（3）生长到第二籽晶层（2）上。