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    METHOD FOR IN-SITU CLEANING OF DEPOSITION SYSTEMS
    1.
    发明申请
    METHOD FOR IN-SITU CLEANING OF DEPOSITION SYSTEMS 审中-公开
    沉积物系统的现场清洁方法

    公开(公告)号：US20110079251A1

    公开(公告)日：2011-04-07

    申请号：US12749087

    申请日：2010-03-29

    申请人： Olga Kryliouk ,  Jie Su ,  Kevin Griffin ,  Sandeep Nijhawan

    发明人： Olga Kryliouk ,  Jie Su ,  Kevin Griffin ,  Sandeep Nijhawan

    IPC分类号： B08B5/00

    CPC分类号： C23C16/4405

    摘要： A method for in-situ cleaning of a deposition system is disclosed. The method includes providing a deposition system with portions of the deposition system deposited with at least a group III element or a compound of a group III element. Halogen containing fluid is introduced into the deposition system. The halogen containing fluid is permitted to react with the group III element to form a halide. The halide in solid state is converted to a gaseous state. The halide in gaseous state is purged out of the deposition system.

    摘要翻译： 公开了一种用于原位清洗沉积系统的方法。 该方法包括为沉积系统提供沉积有至少III族元素或III族元素的化合物的沉积系统的部分。 将含卤素的流体引入沉积系统。 允许含卤素的流体与III族元素反应形成卤化物。 固态卤化物转化为气态。 气态卤化物从沉积系统中排出。

    METHOD OF DECONTAMINATION OF PROCESS CHAMBER AFTER IN-SITU CHAMBER CLEAN
    3.
    发明申请
    METHOD OF DECONTAMINATION OF PROCESS CHAMBER AFTER IN-SITU CHAMBER CLEAN 审中-公开
    现场室清洁后过程室去除的方法

    公开(公告)号：US20110117728A1

    公开(公告)日：2011-05-19

    申请号：US12868899

    申请日：2010-08-26

    申请人： Jie Su ,  Lori D. Washington ,  Sandeep Nijhawan ,  Olga Kryliouk ,  Jacob Grayson ,  Sang Won Kang ,  Dong Hyung Lee ,  Hua Chung

    发明人： Jie Su ,  Lori D. Washington ,  Sandeep Nijhawan ,  Olga Kryliouk ,  Jacob Grayson ,  Sang Won Kang ,  Dong Hyung Lee ,  Hua Chung

    IPC分类号： H01L21/20 ,  B08B9/00

    CPC分类号： C23C16/4405 ,  C23C16/4404 ,  C23C16/45574 ,  H01L21/67115

    摘要： A method and apparatus for removing deposition products from internal surfaces of a processing chamber, and for preventing or slowing growth of such deposition products. A halogen containing gas is provided to the chamber to etch away deposition products. A halogen scavenging gas is provided to the chamber to remove any residual halogen. The halogen scavenging gas is generally activated by exposure to electromagnetic energy, either inside the processing chamber by thermal energy, or in a remote chamber by electric field, UV, or microwave. A deposition precursor may be added to the halogen scavenging gas to form a deposition resistant film on the internal surfaces of the chamber. Additionally, or alternately, a deposition resistant film may be formed by sputtering a deposition resistant metal onto internal components of the processing chamber in a PVD process.

    摘要翻译： 一种用于从处理室的内表面去除沉积产物并用于防止或减缓这种沉积产物的生长的方法和装置。 将含卤素气体提供到室以蚀刻掉沉积产物。 将卤素清除气体提供到室以除去任何残留的卤素。 卤素清除气体通常通过暴露于电磁能（通过热能在处理室内）或通过电场，UV或微波在远程室中而被激活。 可以将沉积前体添加到卤素清除气体中，以在室的内表面上形成耐沉积膜。 另外，或者也可以通过在PVD工艺中将耐沉积金属溅射到处理室的内部部件上来形成耐沉积膜。

    METHOD FOR DEPOSITING GROUP III/V COMPOUNDS
    4.
    发明申请
    METHOD FOR DEPOSITING GROUP III/V COMPOUNDS 审中-公开
    沉积III / V族化合物的方法

    公开(公告)号：US20090149008A1

    公开(公告)日：2009-06-11

    申请号：US12244440

    申请日：2008-10-02

    申请人： Olga Kryliouk ,  Sandeep Nijhawan ,  Yuriy Melnik ,  Lori D. Washington ,  Jacob W. Grayson ,  Sung W. Jun ,  Jie Su

    发明人： Olga Kryliouk ,  Sandeep Nijhawan ,  Yuriy Melnik ,  Lori D. Washington ,  Jacob W. Grayson ,  Sung W. Jun ,  Jie Su

    IPC分类号： H01L21/20

    CPC分类号： C30B25/02 ,  C23C16/303 ,  C23C16/4488 ,  C23C16/45578 ,  C30B29/403

    摘要： Embodiments of the invention generally relate to methods for forming Group III-V materials by a hydride vapor phase epitaxy (HVPE) process. In one embodiment, a method for forming a gallium nitride material on a substrate within a processing chamber is provided which includes heating a metallic source to form a heated metallic source, wherein the heated metallic source contains gallium, aluminum, indium, alloys thereof, or combinations thereof, exposing the heated metallic source to chlorine gas while forming a metallic chloride gas, exposing the substrate to the metallic chloride gas and a nitrogen precursor gas while forming a metal nitride layer on the substrate during the HVPE process. The method further provides exposing the substrate to chlorine gas during a pretreatment process prior to forming the metal nitride layer. In one example, the exhaust conduit of the processing chamber is heated to about 200° C. or less during the pretreatment process.

    摘要翻译： 本发明的实施方案一般涉及通过氢化物气相外延（HVPE）方法形成III-V族材料的方法。 在一个实施例中，提供了一种用于在处理室内的衬底上形成氮化镓材料的方法，其包括加热金属源以形成加热的金属源，其中加热的金属源包含镓，铝，铟，其合金或 其组合，同时形成金属氯化物气体，将加热的金属源暴露于氯气中，在HVPE工艺期间在衬底上形成金属氮化物层，同时将衬底暴露于金属氯化物气体和氮气前体气体。 该方法还在形成金属氮化物层之前在预处理工艺期间将衬底暴露于氯气。 在一个实例中，处理室的排气管道在预处理过程中被加热到约200℃或更低。

    NITRIDE OPTOELECTRONIC DEVICES WITH BACKSIDE DEPOSITION
    10.
    发明申请
    NITRIDE OPTOELECTRONIC DEVICES WITH BACKSIDE DEPOSITION 审中-公开
    具有背面沉积的氮化物光电器件

    公开(公告)号：US20080296594A1

    公开(公告)日：2008-12-04

    申请号：US12173424

    申请日：2008-07-15

    申请人： David Bour ,  Jacob Smith ,  Jie Su ,  Sandeep Nijhawan

    发明人： David Bour ,  Jacob Smith ,  Jie Su ,  Sandeep Nijhawan

    IPC分类号： H01L33/00

    CPC分类号： H01L33/007

    摘要： Nitride optoelectronic devices that have asymmetric double-sided structures and methods fabricating such structures are disclosed. Two n-type III-N layers are formed simultaneously over opposite sides of a substrate with substantially the same composition. Thereafter, a p-type III-N active layer is formed over one of the n-type III-N layers but not over the other.

    摘要翻译： 公开了具有非对称双面结构的氮化物光电器件和制造这种结构的方法。 两个n型III-N层同时形成在具有基本相同组成的衬底的相对侧上。 此后，在n型III-N层之一上形成p型III-N有源层，而不是在另一层上形成p型III-N有源层。