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    METHOD FOR IN-SITU CLEANING OF DEPOSITION SYSTEMS
    1.
    发明申请
    METHOD FOR IN-SITU CLEANING OF DEPOSITION SYSTEMS 审中-公开
    沉积物系统的现场清洁方法

    公开(公告)号：US20110079251A1

    公开(公告)日：2011-04-07

    申请号：US12749087

    申请日：2010-03-29

    申请人： Olga Kryliouk ,  Jie Su ,  Kevin Griffin ,  Sandeep Nijhawan

    发明人： Olga Kryliouk ,  Jie Su ,  Kevin Griffin ,  Sandeep Nijhawan

    IPC分类号： B08B5/00

    CPC分类号： C23C16/4405

    摘要： A method for in-situ cleaning of a deposition system is disclosed. The method includes providing a deposition system with portions of the deposition system deposited with at least a group III element or a compound of a group III element. Halogen containing fluid is introduced into the deposition system. The halogen containing fluid is permitted to react with the group III element to form a halide. The halide in solid state is converted to a gaseous state. The halide in gaseous state is purged out of the deposition system.

    摘要翻译： 公开了一种用于原位清洗沉积系统的方法。 该方法包括为沉积系统提供沉积有至少III族元素或III族元素的化合物的沉积系统的部分。 将含卤素的流体引入沉积系统。 允许含卤素的流体与III族元素反应形成卤化物。 固态卤化物转化为气态。 气态卤化物从沉积系统中排出。

    DECONTAMINATION OF MOCVD CHAMBER USING NH3 PURGE AFTER IN-SITU CLEANING
    2.
    发明申请
    DECONTAMINATION OF MOCVD CHAMBER USING NH3 PURGE AFTER IN-SITU CLEANING 审中-公开
    在现场清洁后使用NH3净化的MOCVD室的去除

    公开(公告)号：US20100273291A1

    公开(公告)日：2010-10-28

    申请号：US12731030

    申请日：2010-03-24

    申请人： Olga Kryliouk ,  Jie Su ,  Kevin Griffin ,  Sung Won Jun ,  Sandeep Nijwahan ,  Xizi Dong ,  Tze Poon ,  Lori D. Washington ,  Jacob Grayson

    发明人： Olga Kryliouk ,  Jie Su ,  Kevin Griffin ,  Sung Won Jun ,  Sandeep Nijwahan ,  Xizi Dong ,  Tze Poon ,  Lori D. Washington ,  Jacob Grayson

    IPC分类号： H01L51/40

    CPC分类号： C23C16/303 ,  C23C16/4405 ,  C23C16/45563 ,  C23C16/45574 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007

    摘要： Embodiments of the present invention generally relate to methods and apparatus for removing unwanted deposition build-up from one more interior surfaces of a substrate processing chamber after a substrate is processed in a chamber to form, for example, Group III-V materials by metal-organic chemical vapor deposition (MOCVD) deposition processes and/or hydride vapor phase epitaxial (HVPE) deposition processes. In one embodiment, a method for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber is provided. The method comprises depositing one or more Group III containing layers over a substrate disposed in the substrate processing chamber, transferring the substrate out of the substrate processing chamber, and pulsing a halogen containing gas into the substrate processing chamber to remove at least a portion of the unwanted deposition build-up from one or more interior surfaces of the substrate processing chamber.

    摘要翻译： 本发明的实施方案一般涉及用于在衬底在腔室中处理以形成例如III-V族材料之后，从衬底处理室的多个内表面去除不想要的沉积积累的方法和装置， 有机化学气相沉积（MOCVD）沉积工艺和/或氢化物气相外延（HVPE）沉积工艺。 在一个实施例中，提供了从衬底处理室的一个或多个内表面去除不想要的沉积积聚的方法。 该方法包括在设置在衬底处理室中的衬底上沉积一个或多个含III族的层，将衬底转移到衬底处理室之外，并将含卤素的气体脉冲到衬底处理室中以去除至少一部分 从衬底处理室的一个或多个内表面积聚不需要的沉积物。

    PLASMA-ASSISTED MOCVD FABRICATION OF P-TYPE GROUP III-NITRIDE MATERIALS
    4.
    发明申请
    PLASMA-ASSISTED MOCVD FABRICATION OF P-TYPE GROUP III-NITRIDE MATERIALS 审中-公开
    P型III型氮化物材料的等离子体辅助MOCVD制造

    公开(公告)号：US20120258580A1

    公开(公告)日：2012-10-11

    申请号：US13413009

    申请日：2012-03-06

    申请人： Karl Brown ,  Kevin Griffin ,  David Bour ,  Olga Kryliouk

    发明人： Karl Brown ,  Kevin Griffin ,  David Bour ,  Olga Kryliouk

    IPC分类号： H01L21/205 ,  C23C16/56 ,  C23C16/50

    CPC分类号： H01L21/0262 ,  C23C16/303 ,  C23C16/452 ,  C23C16/56 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/02579 ,  H01L33/007

    摘要： The plasma-assisted metal-organic chemical vapor deposition (MOCVD) fabrication of a p-type group III-nitride material is described. For example, a method of fabricating a p-type group III-nitride material includes generating a nitrogen-based plasma. A nitrogen-containing species from the nitrogen-based plasma is reacted with a group III precursor and a p-type dopant precursor in a metal-organic chemical vapor deposition (MOCVD) chamber. A group III-nitride layer including p-type dopants is then formed above a substrate.

    摘要翻译： 描述了p型III族氮化物材料的等离子体辅助金属 - 有机化学气相沉积（MOCVD）制造。 例如，制造p型III族氮化物材料的方法包括生成氮基等离子体。 来自氮基等离子体的含氮物质与金属有机化学气相沉积（MOCVD）室中的III族前体和p型掺杂剂前体反应。 然后在衬底上形成包括p型掺杂剂的III族氮化物层。

    DUAL-MODE COMMUNICATION DEVICES AND METHODS FOR ARENA GAMING
    7.
    发明申请
    DUAL-MODE COMMUNICATION DEVICES AND METHODS FOR ARENA GAMING 有权
    双模通信设备和ARENA游戏的方法

    公开(公告)号：US20160243444A1

    公开(公告)日：2016-08-25

    申请号：US15144723

    申请日：2016-05-02

    申请人： Kevin Griffin

    发明人： Kevin Griffin

    IPC分类号： A63F13/60 ,  A63F13/35 ,  H04W4/00

    CPC分类号： H04M1/7253 ,  A63F13/12 ,  A63F13/327 ,  A63F13/34 ,  A63F13/35 ,  A63F13/358 ,  A63F13/60 ,  A63F2300/204 ,  A63F2300/534 ,  A63F2300/538 ,  G02C11/10 ,  G08C23/04 ,  H04N5/4403 ,  H04N21/40 ,  H04N21/4122 ,  H04N21/4126 ,  H04N21/42202 ,  H04N21/43637 ,  H04N21/4781 ,  H04N21/482 ,  H04N21/6125 ,  H04N21/6137 ,  H04N21/64322 ,  H04W4/80 ,  H04W88/06

    摘要： Methods, systems, and techniques for dual-mode communication are provided. Example embodiments provide an enhanced mobile device that includes a CPU, a low latency transceiver, and a high latency transceiver. The enhanced mobile device is in communication with a console via both the low latency transceiver and the high latency transceiver. The console also includes a CPU, a low latency transceiver, and a high latency transceiver. In some embodiments, the low latency communication channel is used to transmit control messages to an entertainment console whereas the high latency communication channel is used to communicate data between the mobile device and the entertainment console. The dual-mode communication may be used in different scenarios, including with an entertainment console for arena gaming and other entertainment applications.

    摘要翻译： 提供了双模式通信的方法，系统和技术。 示例性实施例提供了包括CPU，低延迟收发器和高延迟收发器的增强型移动设备。 增强型移动设备通过低延迟收发器和高延迟收发器与控制台通信。 控制台还包括CPU，低延迟收发器和高延迟收发器。 在一些实施例中，低等待时间通信信道用于将控制消息发送到娱乐控制台，而高延迟通信信道用于在移动设备和娱乐控制台之间传送数据。 双模式通信可以用于不同的场景，包括用于竞技场游戏和其他娱乐应用的娱乐控制台。

    CHAMBER EXHAUST IN-SITU CLEANING FOR PROCESSING APPARATUSES
    9.
    发明申请
    CHAMBER EXHAUST IN-SITU CLEANING FOR PROCESSING APPARATUSES 审中-公开
    用于加工设备的室内排气清洗

    公开(公告)号：US20120304930A1

    公开(公告)日：2012-12-06

    申请号：US13485590

    申请日：2012-05-31

    申请人： Gregory Scott Verdict ,  Kevin Griffin ,  Allen Gregory Fox

    发明人： Gregory Scott Verdict ,  Kevin Griffin ,  Allen Gregory Fox

    IPC分类号： C30B25/14 ,  B01D29/52 ,  B01D46/42 ,  B01D53/74

    CPC分类号： C23C16/4412 ,  C23C16/4407 ,  C23C16/45557

    摘要： Apparatuses and systems are disclosed for exhausting by-products from a processing chamber. In an embodiment, a dual exhaust system for removing by-products from a processing chamber includes a first exhaust line and a second exhaust line with each line having a pressure control valve and a particle trap for removing by-products. A portion of the first exhaust line may be coupled in parallel with the second exhaust line. The second exhaust line can be isolated from the first exhaust line and cleaned while the first exhaust line is removing by-products from the processing chamber or vice versa. In one embodiment, an exhaust system for removing by-products from a processing chamber includes an exhaust line and valves for removing the by-products. The valves are designed to operate at a high temperature such that the heated by-products are in a vapor phase while being removed through the exhaust line.

    摘要翻译： 公开了用于从处理室排出副产物的装置和系统。 在一个实施例中，用于从处理室除去副产物的双排气系统包括第一排气管线和第二排气管线，每条管线具有压力控制阀和用于除去副产物的颗粒捕集器。 第一排气管线的一部分可以与第二排气管线并联连接。 第二排气管线可以与第一排气管线隔离，并且在第一排气管路从处理室中除去副产物的同时进行清洁，反之亦然。 在一个实施例中，用于从处理室除去副产物的排气系统包括用于除去副产物的排气管线和阀。 阀被设计为在高温下操作，使得加热的副产物处于汽相，同时通过排气管线被移除。

    Apparatus and method for asynchronous logical mirroring
    10.
    发明申请
    Apparatus and method for asynchronous logical mirroring 审中-公开
    异步逻辑镜像的装置和方法

    公开(公告)号：US20050050286A1

    公开(公告)日：2005-03-03

    申请号：US10651149

    申请日：2003-08-28

    申请人： Thomas Crowley ,  Robert Gintowt ,  Kevin Griffin ,  Scott Helt ,  Glen Nelson ,  Mark Piazza

    发明人： Thomas Crowley ,  Robert Gintowt ,  Kevin Griffin ,  Scott Helt ,  Glen Nelson ,  Mark Piazza

    IPC分类号： G06F11/20 ,  G06F12/16

    CPC分类号： G06F11/2064 ,  G06F11/2074

    摘要： An apparatus and method provides the capability of mirroring storage between geographically remote locations in an asynchronous manner that does not require all writes on primary storage to be performed in the same order on the mirrored storage. The mirroring of the present invention is “logical mirroring”, which does not require identical disk drives, and which supports mirroring between geographically remote locations to protect against catastrophic site failure. A sequence number is assigned to data written to primary storage before the data is transferred to the mirrored storage. The mirrored storage can write data asynchronously, which may result in some data being written before previous data on the mirrored storage. When a system failure occurs that requires use of the mirrored storage, the mirrored storage is first quiesced to allow all pending writes to occur. If the mirrored storage has no missing data corresponding to a sequence number that is lower than the highest sequence number of data written to the mirrored storage, the mirrored storage may be used. If, however, the mirrored storage has missing data corresponding to a sequence number that is lower than the highest sequence number of data written to the mirrored storage, the mirrored storage cannot be used.

    摘要翻译： 设备和方法提供以异步方式在地理上远程位置之间镜像存储的能力，其不需要在镜像存储上以相同顺序执行主存储上的所有写入。 本发明的镜像是“逻辑镜像”，其不需要相同的磁盘驱动器，并且其支持在地理上偏远的位置之间的镜像，以防止灾难性的站点故障。 在将数据传输到镜像存储之前，将序列号分配给写入主存储器的数据。 镜像存储器可以异步写入数据，这可能导致一些数据在镜像存储器上的先前数据之前写入。 当发生需要使用镜像存储的系统故障时，镜像存储首先被停顿以允许发生所有挂起的写入。 如果镜像存储器没有与低于写入到镜像存储器的最高序列数据的序列号相对应的丢失数据，则可以使用镜像存储器。 但是，如果镜像存储具有对应于低于写入镜像存储的最高序列数的序列号的数据丢失，则不能使用镜像存储。