Thin-film transistor with channel layer formed by metal oxide film including indium, and method of manufacturing the same
    1.
    发明授权
    Thin-film transistor with channel layer formed by metal oxide film including indium, and method of manufacturing the same 有权
    具有由包含铟的金属氧化物膜形成的沟道层的薄膜晶体管及其制造方法

    公开(公告)号:US08026506B2

    公开(公告)日:2011-09-27

    申请号:US12525448

    申请日:2008-01-30

    IPC分类号: H01L29/15

    CPC分类号: H01L29/7869 H01L29/66969

    摘要: In a thin-film transistor comprising respective elements of: three electrodes of a source electrode, a drain electrode and a gate electrode; a channel layer; and a gate insulating film, at least the channel layer is formed by a metal oxide film including indium. Therefore, it is possible to obtain the thin-film transistor, which can manufacture an element to a polymer substrate without using a high temperature process and which can achieve a high performance and a high reliability at low cost.

    摘要翻译: 在包括源电极,漏电极和栅电极的三个电极的各个元件的薄膜晶体管中; 一个通道层; 和栅极绝缘膜,至少沟道层由包含铟的金属氧化物膜形成。 因此,可以获得能够在不使用高温工艺的情况下制造聚合物基板的元件并且可以以低成本实现高性能和高可靠性的薄膜晶体管。

    THIN-FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    2.
    发明申请
    THIN-FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
    薄膜晶体管及其制造方法

    公开(公告)号:US20100025680A1

    公开(公告)日:2010-02-04

    申请号:US12525448

    申请日:2008-01-30

    IPC分类号: H01L29/786 H01L21/336

    CPC分类号: H01L29/7869 H01L29/66969

    摘要: In a thin-film transistor comprising respective elements of: three electrodes of a source electrode, a drain electrode and a gate electrode; a channel layer; and a gate insulating film, at least the channel layer is formed by a metal oxide film including indium. Therefore, it is possible to obtain the thin-film transistor, which can manufacture an element to a polymer substrate without using a high temperature process and which can achieve a high performance and a high reliability at low cost.

    摘要翻译: 在包括源电极,漏电极和栅电极的三个电极的各个元件的薄膜晶体管中; 一个通道层; 和栅极绝缘膜,至少沟道层由包含铟的金属氧化物膜形成。 因此,可以获得能够在不使用高温工艺的情况下制造聚合物基板的元件并且可以以低成本实现高性能和高可靠性的薄膜晶体管。

    THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR
    3.
    发明申请
    THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR 审中-公开
    薄膜晶体管和制造薄膜晶体管的方法

    公开(公告)号:US20120037897A1

    公开(公告)日:2012-02-16

    申请号:US13264599

    申请日:2010-04-16

    IPC分类号: H01L51/10 H01L21/20 H01L29/12

    摘要: (1) Disclosed is a thin film transistor comprising elements, namely a source electrode, a drain electrode, a gate electrode, a channel layer and a gate insulating film, said thin film transistor being characterized in that the channel layer is formed of an indium oxide film that is doped with tungsten and zinc and/or tin. (2) Disclosed is a bipolar thin film transistor comprising elements, namely a source electrode, a drain electrode, a gate electrode, a channel layer and a gate insulating film, said bipolar thin film transistor being characterized in that the channel layer is a laminate of an organic material film and a metal oxide film that contains indium doped with at least one of tungsten, tin or titanium and has an electrical resistivity that is controlled in advance. (3) Disclosed is a method for manufacturing a thin film transistor comprising elements, namely a source electrode, a drain electrode, a gate electrode, a channel layer and a gate insulating film, said method for manufacturing a thin film transistor being characterized in that at least the channel layer or a part of the channel layer is formed by forming a metal oxide film by a sputtering process using an In-containing target without heating the substrate, and a heat treatment is carried out after forming the above-described elements on the substrate.

    摘要翻译: (1)公开了一种薄膜晶体管,其包括源电极,漏电极,栅电极,沟道层和栅极绝缘膜等元件,所述薄膜晶体管的特征在于,所述沟道层由铟 氧化物膜,其掺杂有钨和锌和/或锡。 (2)公开了一种双极薄膜晶体管,其特征在于,所述双极薄膜晶体管包括源电极,漏电极,栅电极,沟道层和栅极绝缘膜,所述双极型薄膜晶体管的特征在于,沟道层为层叠体 的有机材料膜和金属氧化物膜,其含有掺杂有钨,锡或钛中的至少一种的铟并具有预先控制的电阻率。 (3)公开了一种制造薄膜晶体管的方法,该薄膜晶体管包括源电极,漏电极,栅电极,沟道层和栅极绝缘膜,所述薄膜晶体管的制造方法的特征在于: 至少沟道层或沟道层的一部分通过使用含In靶的溅射法在不加热基板的情况下通过溅射法形成金属氧化物膜而形成,并且在形成上述元素之后进行热处理 底物。

    Apparatus and process for film deposition
    5.
    发明授权
    Apparatus and process for film deposition 失效
    用于膜沉积的装置和方法

    公开(公告)号:US06875478B2

    公开(公告)日:2005-04-05

    申请号:US10066380

    申请日:2002-02-05

    CPC分类号: C23C14/562

    摘要: A film deposition apparatus equipped with a vacuum chamber, comprising a pair of rollers for vertically traveling a continuous sheet as a substrate, and a pair of sputtering cathodes for continuously depositing the film on the surfaces of the sheet in the vacuum chamber. The cathodes are vertically arranged and horizontally faced each other. The sheet is traveled between a pair of the cathodes. The apparatus and the film deposition process using it make it possible to deposit a film even on surfaces of a flexible sheet without causing problems such as defective film deposition or abnormal discharge, while ensuring stable, continuous, long-term operation.

    摘要翻译: 一种装有真空室的成膜装置,包括用于垂直行进连续片材作为基底的一对辊子和用于在真空室中在片材表面上连续沉积薄膜的一对溅射阴极。 阴极垂直布置并水平面对。 片材在一对阴极之间行进。 使用它的装置和成膜方法使得可以在柔性片的表面上沉积膜,而不会导致诸如膜沉积错误或异常放电的问题,同时确保稳定,连续的长期操作。

    Process for producing rubber-based composite material
    6.
    发明授权
    Process for producing rubber-based composite material 失效
    生产橡胶基复合材料的方法

    公开(公告)号:US07172681B2

    公开(公告)日:2007-02-06

    申请号:US10771117

    申请日:2004-02-04

    IPC分类号: C23C14/34

    摘要: Disclosed is a process for producing a rubber-based composite material, including the steps of forming, by sputtering, an adhesion film on a substrate to be mated with a rubber for constituting the composite material, laminating a rubber composition on the adhesion film, and vulcanizing the rubber composition, the sputtering is conducted by using a first target and a second target, composed of different metallic components and provided in a chamber, while moving the substrate in sputtering atmospheres formed by applying electric power simultaneously to the first and second targets. Also disclosed is a process for producing a rubber-based composite material, including the steps of forming, by sputtering, an adhesion film on a substrate to be mated with a rubber for constituting the composite material, laminating a rubber composition on the adhesion film, and vulcanizing the rubber composition, wherein the sputtering is conducted by using a plurality of targets, composed of metals or metallic compounds containing different metallic elements and provided in a chamber, while rotating the substrate in sputtering atmospheres formed by applying electric power simultaneously to the targets.

    摘要翻译: 公开了一种橡胶系复合材料的制造方法,其特征在于,包括以下步骤:通过溅射形成与用于构成所述复合材料的橡胶配合的基板上的粘合膜,在所述粘合膜上层叠橡胶组合物,以及 硫化橡胶组合物时,通过使用由不同的金属组分构成并设置在室中的第一靶和第二靶进行同时在通过向第一靶和第二靶施加电力而形成的溅射气氛中移动衬底的同时进行溅射。 还公开了一种橡胶类复合材料的制造方法,包括以下步骤:通过溅射形成与用于构成复合材料的橡胶配合的基材上的粘合膜,在粘合膜上层压橡胶组合物, 并且对橡胶组合物进行硫化,其中通过使用由金属或包含不同金属元素的金属化合物构成并设置在室中的多个靶进行溅射,同时在通过向目标施加电力而形成的溅射气氛中旋转衬底 。

    Method for forming porous thin film
    10.
    发明申请
    Method for forming porous thin film 审中-公开
    形成多孔薄膜的方法

    公开(公告)号:US20060189132A1

    公开(公告)日:2006-08-24

    申请号:US10553190

    申请日:2004-04-15

    IPC分类号: H01L21/44

    摘要: A method for forming a porous thin film is characterized by formation of a composite thin film on a substrate, in which film a metal portion composed of a first metal component and a metal compound portion composed of a compound of a second metal component which is different from the first metal component are mixed-dispersed, and following lo removal of the metal portion from the composite thin film. A method for forming a porous thin film is alternatively characterized by formation of a composite thin film on a substrate, in which film a first metal portion composed of a first metal component and a second metal portion composed of a second metal component which is different from the first metal component are mixed-dispersed, and following removal of either one of the metal portions from the composite thin film.

    摘要翻译: 一种形成多孔薄膜的方法的特征在于在基片上形成复合薄膜,其中薄膜由第一金属组分构成的金属部分和由不同的第二金属组分的化合物组成的金属化合物部分 从第一金属组分混合分散,并且随后从复合薄膜中去除金属部分。 形成多孔薄膜的方法或者其特征在于在基底上形成复合薄膜,其中薄膜由第一金属组分构成的第一金属部分和由不同于第一金属组分的第二金属组分组成的第二金属部分 第一金属组分被混合分散,并且在从复合薄膜中去除任一金属部分之后。