Transparent conductive film and touch panel
    2.
    发明授权
    Transparent conductive film and touch panel 失效
    透明导电膜和触摸屏

    公开(公告)号:US06896981B2

    公开(公告)日:2005-05-24

    申请号:US10194963

    申请日:2002-07-15

    IPC分类号: B32B9/00 B32B15/04 C03C27/08

    摘要: A transparent conductive film has a polymer film 4 and a transparent conductive layer 5 formed on the polymer film 4. The transparent conductive layer includes indium oxide, a zinc oxide system and a tin oxide system. A covering layer 9, made of material different from that of the transparent conductive layer 5, is formed on the transparent conductive layer 5. A touch panel is provided with the transparent conductive film as its upper electrode 6A or lower electrode. The surface of the transparent conductive layer is covered with the covering layer, so that physical or chemical stresses generated during the input to the touch panel do not affect transparent conductive layer directly, thus preventing damages and delamination of the transparent conductive layer. Furthermore, the covering layer formed on the transparent conductive layer improves the strength of the transparent conductive film, thereby enhancing a resistance to wear.

    摘要翻译: 透明导电膜具有在聚合物膜4上形成的聚合物膜4和透明导电层5。 透明导电层包括氧化铟,氧化锌系和氧化锡系。 在透明导电层5上形成由不同于透明导电层5的材料制成的覆盖层9。 触摸面板设置有透明导电膜作为其上电极6A或下电极。 透明导电层的表面被覆盖层覆盖,使得在输入到触摸面板期间产生的物理或化学应力不直接影响透明导电层,从而防止透明导电层的损坏和分层。 此外,形成在透明导电层上的覆盖层提高了透明导电膜的强度,从而提高了耐磨性。

    Apparatus and process for film deposition
    4.
    发明授权
    Apparatus and process for film deposition 失效
    用于膜沉积的装置和方法

    公开(公告)号:US06875478B2

    公开(公告)日:2005-04-05

    申请号:US10066380

    申请日:2002-02-05

    CPC分类号: C23C14/562

    摘要: A film deposition apparatus equipped with a vacuum chamber, comprising a pair of rollers for vertically traveling a continuous sheet as a substrate, and a pair of sputtering cathodes for continuously depositing the film on the surfaces of the sheet in the vacuum chamber. The cathodes are vertically arranged and horizontally faced each other. The sheet is traveled between a pair of the cathodes. The apparatus and the film deposition process using it make it possible to deposit a film even on surfaces of a flexible sheet without causing problems such as defective film deposition or abnormal discharge, while ensuring stable, continuous, long-term operation.

    摘要翻译: 一种装有真空室的成膜装置,包括用于垂直行进连续片材作为基底的一对辊子和用于在真空室中在片材表面上连续沉积薄膜的一对溅射阴极。 阴极垂直布置并水平面对。 片材在一对阴极之间行进。 使用它的装置和成膜方法使得可以在柔性片的表面上沉积膜,而不会导致诸如膜沉积错误或异常放电的问题,同时确保稳定,连续的长期操作。

    ITO thin film, method of producing the same, transparent conductive film, and touch panel
    5.
    发明申请
    ITO thin film, method of producing the same, transparent conductive film, and touch panel 审中-公开
    ITO薄膜,其制造方法,透明导电膜和触摸面板

    公开(公告)号:US20060003188A1

    公开(公告)日:2006-01-05

    申请号:US11184811

    申请日:2005-07-20

    IPC分类号: H01L21/44 B32B19/00

    摘要: A crystalline ITO transparent conductive thin film is formed by heating a substrate at low temperature during the sputtering film formation. The crystalline ITO transparent conductive thin film is formed by using an ITO target comprising In2O3 and SnO2 where a weight percentage of SnO2 is 6% or less based on the total weight of In2O3 and SnO2 in the ITO target, and heating the substrate at 90 to 170° C. during the sputtering film formation. The crystalline ITO film with high strength and mechanical durability can be formed by heating at low temperature, which meets heat resistance of the substrate, without requiring annealing after the film formation. There are provided a transparent conductive film comprising a polymer film 4 and an ITO transparent conductive film 5 formed thereon, and a touch panel comprising the transparent conductive film.

    摘要翻译: 通过在溅射成膜期间在低温下加热基板来形成结晶ITO透明导电薄膜。 结晶ITO透明导电薄膜通过使用包含In 2 N 3 O 3和SnO 2 2的ITO靶形成,其中SnO 2的重量百分比 基于ITO靶中的In 2 N 3 O 3和SnO 2 N 2的总重量,SUB> 2 <6%或更小 在溅射成膜期间在90〜170℃下加热基板。 具有高强度和机械耐久性的结晶ITO膜可以通过在低温下加热而形成,其满足基板的耐热性,而不需要在成膜后退火。 提供了包含聚合物膜4和形成在其上的ITO透明导电膜5的透明导电膜,以及包括透明导电膜的触摸面板。

    Method for forming porous thin film
    8.
    发明申请
    Method for forming porous thin film 审中-公开
    形成多孔薄膜的方法

    公开(公告)号:US20060189132A1

    公开(公告)日:2006-08-24

    申请号:US10553190

    申请日:2004-04-15

    IPC分类号: H01L21/44

    摘要: A method for forming a porous thin film is characterized by formation of a composite thin film on a substrate, in which film a metal portion composed of a first metal component and a metal compound portion composed of a compound of a second metal component which is different from the first metal component are mixed-dispersed, and following lo removal of the metal portion from the composite thin film. A method for forming a porous thin film is alternatively characterized by formation of a composite thin film on a substrate, in which film a first metal portion composed of a first metal component and a second metal portion composed of a second metal component which is different from the first metal component are mixed-dispersed, and following removal of either one of the metal portions from the composite thin film.

    摘要翻译: 一种形成多孔薄膜的方法的特征在于在基片上形成复合薄膜,其中薄膜由第一金属组分构成的金属部分和由不同的第二金属组分的化合物组成的金属化合物部分 从第一金属组分混合分散,并且随后从复合薄膜中去除金属部分。 形成多孔薄膜的方法或者其特征在于在基底上形成复合薄膜,其中薄膜由第一金属组分构成的第一金属部分和由不同于第一金属组分的第二金属组分组成的第二金属部分 第一金属组分被混合分散,并且在从复合薄膜中去除任一金属部分之后。

    Thin-film transistor with channel layer formed by metal oxide film including indium, and method of manufacturing the same
    9.
    发明授权
    Thin-film transistor with channel layer formed by metal oxide film including indium, and method of manufacturing the same 有权
    具有由包含铟的金属氧化物膜形成的沟道层的薄膜晶体管及其制造方法

    公开(公告)号:US08026506B2

    公开(公告)日:2011-09-27

    申请号:US12525448

    申请日:2008-01-30

    IPC分类号: H01L29/15

    CPC分类号: H01L29/7869 H01L29/66969

    摘要: In a thin-film transistor comprising respective elements of: three electrodes of a source electrode, a drain electrode and a gate electrode; a channel layer; and a gate insulating film, at least the channel layer is formed by a metal oxide film including indium. Therefore, it is possible to obtain the thin-film transistor, which can manufacture an element to a polymer substrate without using a high temperature process and which can achieve a high performance and a high reliability at low cost.

    摘要翻译: 在包括源电极,漏电极和栅电极的三个电极的各个元件的薄膜晶体管中; 一个通道层; 和栅极绝缘膜,至少沟道层由包含铟的金属氧化物膜形成。 因此,可以获得能够在不使用高温工艺的情况下制造聚合物基板的元件并且可以以低成本实现高性能和高可靠性的薄膜晶体管。

    THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR
    10.
    发明申请
    THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR 审中-公开
    薄膜晶体管和制造薄膜晶体管的方法

    公开(公告)号:US20120037897A1

    公开(公告)日:2012-02-16

    申请号:US13264599

    申请日:2010-04-16

    IPC分类号: H01L51/10 H01L21/20 H01L29/12

    摘要: (1) Disclosed is a thin film transistor comprising elements, namely a source electrode, a drain electrode, a gate electrode, a channel layer and a gate insulating film, said thin film transistor being characterized in that the channel layer is formed of an indium oxide film that is doped with tungsten and zinc and/or tin. (2) Disclosed is a bipolar thin film transistor comprising elements, namely a source electrode, a drain electrode, a gate electrode, a channel layer and a gate insulating film, said bipolar thin film transistor being characterized in that the channel layer is a laminate of an organic material film and a metal oxide film that contains indium doped with at least one of tungsten, tin or titanium and has an electrical resistivity that is controlled in advance. (3) Disclosed is a method for manufacturing a thin film transistor comprising elements, namely a source electrode, a drain electrode, a gate electrode, a channel layer and a gate insulating film, said method for manufacturing a thin film transistor being characterized in that at least the channel layer or a part of the channel layer is formed by forming a metal oxide film by a sputtering process using an In-containing target without heating the substrate, and a heat treatment is carried out after forming the above-described elements on the substrate.

    摘要翻译: (1)公开了一种薄膜晶体管,其包括源电极,漏电极,栅电极,沟道层和栅极绝缘膜等元件,所述薄膜晶体管的特征在于,所述沟道层由铟 氧化物膜,其掺杂有钨和锌和/或锡。 (2)公开了一种双极薄膜晶体管,其特征在于,所述双极薄膜晶体管包括源电极,漏电极,栅电极,沟道层和栅极绝缘膜,所述双极型薄膜晶体管的特征在于,沟道层为层叠体 的有机材料膜和金属氧化物膜,其含有掺杂有钨,锡或钛中的至少一种的铟并具有预先控制的电阻率。 (3)公开了一种制造薄膜晶体管的方法,该薄膜晶体管包括源电极,漏电极,栅电极,沟道层和栅极绝缘膜,所述薄膜晶体管的制造方法的特征在于: 至少沟道层或沟道层的一部分通过使用含In靶的溅射法在不加热基板的情况下通过溅射法形成金属氧化物膜而形成,并且在形成上述元素之后进行热处理 底物。