摘要:
An electrolyte for dye-sensitized solar cells, wherein an oxidation-reduction substance is carried by a vulcanized rubber, a phosphazene polymer, a porous body comprising a high molecular material which has a three-dimensional continuous network skeleton structure, or an EVA resin film. A dye-sensitized solar cell comprising dye-sensitized semiconductor electrodes 2, 3, a counter electrode 4 arranged at an opposed position to the electrodes, and an electrolyte 6 between the electrodes 2, 3 and the electrode 4. A solid electrolyte for dye-sensitized solar cells effective in improving the generation efficiency, durability, and safety of dye-sensitized solar cells and can be manufactured inexpensively.
摘要:
A transparent conductive film has a polymer film 4 and a transparent conductive layer 5 formed on the polymer film 4. The transparent conductive layer includes indium oxide, a zinc oxide system and a tin oxide system. A covering layer 9, made of material different from that of the transparent conductive layer 5, is formed on the transparent conductive layer 5. A touch panel is provided with the transparent conductive film as its upper electrode 6A or lower electrode. The surface of the transparent conductive layer is covered with the covering layer, so that physical or chemical stresses generated during the input to the touch panel do not affect transparent conductive layer directly, thus preventing damages and delamination of the transparent conductive layer. Furthermore, the covering layer formed on the transparent conductive layer improves the strength of the transparent conductive film, thereby enhancing a resistance to wear.
摘要:
An acid-resistant transparent electroconductive substrate with an ITO layer includes a transparent base and the ITO layer formed over the transparent base. The ITO layer contains at least 30 percent by weight of tin oxide. A dye-sensitized solar cell electrode includes the transparent electroconductive substrate and a dye-adsorbed semiconductor layer formed over the ITO layer of the transparent electroconductive substrate. A dye-sensitized solar cell is provided which uses the dye-sensitized solar cell electrode as a dye-sensitized semiconductor electrode. A SnO2 content of 30 percent by weight or more enhances acid resistance. The dye-sensitized semiconductor electrode for the dye-sensitized solar cell is prepared by forming a layer-by-layer self-assembled film on the ITO layer by a layer-by-layer assembly technique, forming a replica layer by acid-treating the layer-by-layer self-assembled film to form irregularities, and forming a semiconductor layer on the replica layer.
摘要:
A film deposition apparatus equipped with a vacuum chamber, comprising a pair of rollers for vertically traveling a continuous sheet as a substrate, and a pair of sputtering cathodes for continuously depositing the film on the surfaces of the sheet in the vacuum chamber. The cathodes are vertically arranged and horizontally faced each other. The sheet is traveled between a pair of the cathodes. The apparatus and the film deposition process using it make it possible to deposit a film even on surfaces of a flexible sheet without causing problems such as defective film deposition or abnormal discharge, while ensuring stable, continuous, long-term operation.
摘要:
A crystalline ITO transparent conductive thin film is formed by heating a substrate at low temperature during the sputtering film formation. The crystalline ITO transparent conductive thin film is formed by using an ITO target comprising In2O3 and SnO2 where a weight percentage of SnO2 is 6% or less based on the total weight of In2O3 and SnO2 in the ITO target, and heating the substrate at 90 to 170° C. during the sputtering film formation. The crystalline ITO film with high strength and mechanical durability can be formed by heating at low temperature, which meets heat resistance of the substrate, without requiring annealing after the film formation. There are provided a transparent conductive film comprising a polymer film 4 and an ITO transparent conductive film 5 formed thereon, and a touch panel comprising the transparent conductive film.
摘要翻译:通过在溅射成膜期间在低温下加热基板来形成结晶ITO透明导电薄膜。 结晶ITO透明导电薄膜通过使用包含In 2 N 3 O 3和SnO 2 2的ITO靶形成,其中SnO 2的重量百分比 基于ITO靶中的In 2 N 3 O 3和SnO 2 N 2的总重量,SUB> 2 <6%或更小 在溅射成膜期间在90〜170℃下加热基板。 具有高强度和机械耐久性的结晶ITO膜可以通过在低温下加热而形成,其满足基板的耐热性,而不需要在成膜后退火。 提供了包含聚合物膜4和形成在其上的ITO透明导电膜5的透明导电膜,以及包括透明导电膜的触摸面板。
摘要:
The present invention provides a semiconductor electrode of organic dye-sensitized metal oxide having a semiconductor layer of metal oxide that can be easily prepared, and an organic dye-sensitized solar cell. The semiconductor electrode of organic dye-sensitized metal oxide comprises a substrate having a transparent electrode thereon, a semiconductor layer of metal oxide provided on the electrode and an organic dye absorbed on a surface of the semiconductor layer, the semiconductor layer being formed by a vapor deposition process.
摘要:
A transparent conductive film comprising a polymer film and a transparent conductive layer provided thereon, especially a transparent conductive film improved in durability and mechanical and electrical properties, a process for the preparation thereof, and a touch panel provided with the transparent conductive film, as well as transparent conductive plate and the process for the preparation thereof. The transparent conductive film comprising a polymer film, an undercoat layer and a transparent conductive layer which are superposed in this order, and the undercoat layer contains a compound having at least one selected from an amino group and a phosphoric acid group.
摘要:
A method for forming a porous thin film is characterized by formation of a composite thin film on a substrate, in which film a metal portion composed of a first metal component and a metal compound portion composed of a compound of a second metal component which is different from the first metal component are mixed-dispersed, and following lo removal of the metal portion from the composite thin film. A method for forming a porous thin film is alternatively characterized by formation of a composite thin film on a substrate, in which film a first metal portion composed of a first metal component and a second metal portion composed of a second metal component which is different from the first metal component are mixed-dispersed, and following removal of either one of the metal portions from the composite thin film.
摘要:
In a thin-film transistor comprising respective elements of: three electrodes of a source electrode, a drain electrode and a gate electrode; a channel layer; and a gate insulating film, at least the channel layer is formed by a metal oxide film including indium. Therefore, it is possible to obtain the thin-film transistor, which can manufacture an element to a polymer substrate without using a high temperature process and which can achieve a high performance and a high reliability at low cost.
摘要:
(1) Disclosed is a thin film transistor comprising elements, namely a source electrode, a drain electrode, a gate electrode, a channel layer and a gate insulating film, said thin film transistor being characterized in that the channel layer is formed of an indium oxide film that is doped with tungsten and zinc and/or tin. (2) Disclosed is a bipolar thin film transistor comprising elements, namely a source electrode, a drain electrode, a gate electrode, a channel layer and a gate insulating film, said bipolar thin film transistor being characterized in that the channel layer is a laminate of an organic material film and a metal oxide film that contains indium doped with at least one of tungsten, tin or titanium and has an electrical resistivity that is controlled in advance. (3) Disclosed is a method for manufacturing a thin film transistor comprising elements, namely a source electrode, a drain electrode, a gate electrode, a channel layer and a gate insulating film, said method for manufacturing a thin film transistor being characterized in that at least the channel layer or a part of the channel layer is formed by forming a metal oxide film by a sputtering process using an In-containing target without heating the substrate, and a heat treatment is carried out after forming the above-described elements on the substrate.