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公开(公告)号：US20110300711A1
公开(公告)日：2011-12-08
申请号：US12859606
申请日：2010-08-19
IPC分类号： H01L21/311 , G21K5/00 , H01L21/263
CPC分类号： H01L21/32139 , G03F7/40 , G03F7/405 , H01L21/0273 , H01L21/0337
摘要： A method of patterning a substrate comprises providing an array of resist features defined by a first pitch and a first gap width between adjacent resist features. Particles are introduced into the array of resist features, wherein the array of resist features becomes hardened. The introduction of particles may cause a reduction in critical dimension of the resist features. Sidewalls are provided on side portions of hardened resist features. Subsequent to the formation of the sidewalls, the hardened resist features are removed, leaving an array of isolated sidewalls disposed on the substrate. The sidewall array provides a mask for double patterning of features in the substrate layers disposed below the sidewalls, wherein an array of features formed in the substrate has a second pitch equal to half that of the first pitch.
摘要翻译： 图案化衬底的方法包括提供由相邻抗蚀剂特征之间的第一间距和第一间隙宽度限定的抗蚀剂特征阵列。 将粒子引入到抗蚀剂特征阵列中，其中抗蚀剂特征阵列变硬。 颗粒的引入可能导致抗蚀剂特征的临界尺寸的降低。 侧壁设置在硬化抗蚀剂特征的侧部。 在形成侧壁之后，去除硬化的抗蚀剂特征，留下设置在基底上的隔离侧壁阵列。 侧壁阵列提供用于在设置在侧壁下方的衬底层中的特征的双重图案化的掩模，其中形成在衬底中的特征阵列具有等于第一间距的一半的第二间距。
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公开(公告)号：US08912097B2
公开(公告)日：2014-12-16
申请号：US12859606
申请日：2010-08-19
IPC分类号： H01L21/302
CPC分类号： H01L21/32139 , G03F7/40 , G03F7/405 , H01L21/0273 , H01L21/0337
摘要： A method of patterning a substrate comprises providing an array of resist features defined by a first pitch and a first gap width between adjacent resist features. Particles are introduced into the array of resist features, wherein the array of resist features becomes hardened. The introduction of particles may cause a reduction in critical dimension of the resist features. Sidewalls are provided on side portions of hardened resist features. Subsequent to the formation of the sidewalls, the hardened resist features are removed, leaving an array of isolated sidewalls disposed on the substrate. The sidewall array provides a mask for double patterning of features in the substrate layers disposed below the sidewalls, wherein an array of features formed in the substrate has a second pitch equal to half that of the first pitch.
摘要翻译： 图案化衬底的方法包括提供由相邻抗蚀剂特征之间的第一间距和第一间隙宽度限定的抗蚀剂特征阵列。 将粒子引入到抗蚀剂特征阵列中，其中抗蚀剂特征阵列变硬。 颗粒的引入可能导致抗蚀剂特征的临界尺寸的降低。 侧壁设置在硬化抗蚀剂特征的侧部。 在形成侧壁之后，去除硬化的抗蚀剂特征，留下设置在基底上的隔离侧壁阵列。 侧壁阵列提供用于在设置在侧壁下方的衬底层中的特征的双重图案化的掩模，其中形成在衬底中的特征阵列具有等于第一间距的一半的第二间距。
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3.发明申请METHOD AND SYSTEM FOR MODIFYING SUBSTRATE RELIEF FEATURES USING ION IMPLANTION 有权使用离子注入修饰衬底缓冲特征的方法和系统公开(公告)号：US20110223546A1
公开(公告)日：2011-09-15
申请号：US13046136
申请日：2011-03-11
CPC分类号： H01J37/317 , G03F7/40 , H01J37/3171 , H01J37/3174 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01L21/0273 , H01L21/2236 , H01L21/263 , H01L21/265 , H01L29/66787
摘要： A method of treating resist features comprises positioning, in a process chamber, a substrate having a set of patterned resist features on a first side of the substrate and generating a plasma in the process chamber having a plasma sheath adjacent to the first side of the substrate. The method may further comprise modifying a shape of a boundary between the plasma and the plasma sheath with a plasma sheath modifier so that a portion of the shape of the boundary is not parallel to a plane defined by a front surface of the substrate facing the plasma, wherein ions from the plasma impinge on the patterned resist features over a wide angular range during a first exposure.
摘要翻译： 一种处理抗蚀剂特征的方法包括在处理室中将在衬底的第一侧上具有一组图案化的抗蚀剂特征的衬底定位，并且在处理室中产生等离子体，其具有与衬底的第一侧相邻的等离子体鞘 。 该方法可以进一步包括用等离子体护套改性剂修改等离子体和等离子体护套之间的边界的形状，使得边界形状的一部分不平行于由衬底面向等离子体的前表面限定的平面 其中来自等离子体的离子在第一曝光期间在宽的角度范围内撞击在图案化的抗蚀剂特征上。
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4.发明授权公开(公告)号：US08460569B2
公开(公告)日：2013-06-11
申请号：US13081692
申请日：2011-04-07
CPC分类号： H01L21/306 , H01L21/2658 , H01L21/26586 , H01L21/3105 , H01L21/311 , H01L21/31155 , H01L21/321 , H01L21/3213
摘要： A method of patterning a substrate, comprises providing a set of patterned features on the substrate, exposing the set of patterned features to a dose of ions incident on the substrate over multiple angles, and selectively etching exposed portions of the patterned features.
摘要翻译： 图案化衬底的方法包括在衬底上提供一组图案化特征，将一组图案化特征暴露于在多个角度上入射到衬底上的一定剂量的离子，以及选择性地蚀刻图案化特征的暴露部分。
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5.发明授权Method and system for modifying photoresist using electromagnetic radiation and ion implantation 有权使用电磁辐射和离子注入修饰光致抗蚀剂的方法和系统公开(公告)号：US08435727B2
公开(公告)日：2013-05-07
申请号：US12896036
申请日：2010-10-01
申请人： Ludovic Godet , Patrick M. Martin
发明人： Ludovic Godet , Patrick M. Martin
IPC分类号： G03F7/20
CPC分类号： C23C16/50 , G03F7/405 , G03F7/427 , G03F7/7045 , G03F7/70875 , H01J37/32357 , H01J37/32412 , H01J37/32422 , H01L21/0273
摘要： A method of reducing surface roughness of a resist feature disposed on a substrate includes generating a plasma having a plasma sheath and ions therein. A shape of the boundary between the plasma and plasma sheath is modified using a plasma sheath modifier, so that a portion of the boundary facing the substrate is not parallel to a plane defined by the substrate. During a first exposure, the resist feature is exposed to electromagnetic radiation having a desired wavelength and the ions are accelerated across the boundary having the modified shape toward the resist features over an angular range.
摘要翻译： 降低设置在基板上的抗蚀剂特征的表面粗糙度的方法包括产生具有等离子体鞘和其中的离子的等离子体。 使用等离子体护套改性剂改变等离子体和等离子体护套之间的边界的形状，使得面对衬底的边界的一部分不平行于由衬底限定的平面。 在第一曝光期间，抗蚀剂特征暴露于具有所需波长的电磁辐射，并且离子在角度范围内被加速跨过具有改变形状的边界朝向抗蚀剂特征。
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6.发明申请公开(公告)号：US20130062309A1
公开(公告)日：2013-03-14
申请号：US13228625
申请日：2011-09-09
CPC分类号： H01L21/0273 , G03F7/40 , H01J37/32422
摘要： A method of reducing roughness in an opening in a surface of a resist material disposed on a substrate, comprises generating a plasma having a plasma sheath and ions therein. The method also includes modifying a shape of a boundary defined between the plasma and the plasma sheath with a plasma sheath modifier so that a portion of the boundary facing the resist material is not parallel to a plane defined by the surface of the substrate. The method also includes providing a first exposure of ions while the substrate is in a first position, the first exposure comprising ions accelerated across the boundary having the modified shape toward the resist material over an angular range with respect to the surface of the substrate.
摘要翻译： 一种降低设置在基板上的抗蚀剂材料的表面中的开口中的粗糙度的方法，包括产生具有等离子体鞘和其中的离子的等离子体。 该方法还包括使用等离子体护套改性剂修改限定在等离子体和等离子体护套之间的边界的形状，使得面向抗蚀剂材料的边界的一部分不平行于由衬底的表面限定的平面。 该方法还包括在衬底处于第一位置时提供离子的第一次曝光，该第一曝光包括在相对于衬底的表面的角度范围内跨过具有改变形状的边界加速离子的离子。
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7.发明申请公开(公告)号：US20120258600A1
公开(公告)日：2012-10-11
申请号：US13081692
申请日：2011-04-07
IPC分类号： H01L21/306
CPC分类号： H01L21/306 , H01L21/2658 , H01L21/26586 , H01L21/3105 , H01L21/311 , H01L21/31155 , H01L21/321 , H01L21/3213
摘要： A method of patterning a substrate, comprises providing a set of patterned features on the substrate, exposing the set of patterned features to a dose of ions incident on the substrate over multiple angles, and selectively etching exposed portions of the patterned features.
摘要翻译： 图案化衬底的方法包括在衬底上提供一组图案化特征，将一组图案化特征暴露于在多个角度上入射到衬底上的一定剂量的离子，以及选择性地蚀刻图案化特征的暴露部分。
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公开(公告)号：US5508233A
公开(公告)日：1996-04-16
申请号：US329021
申请日：1994-10-25
申请人： Dennis J. Yost , Patrick M. Martin
发明人： Dennis J. Yost , Patrick M. Martin
IPC分类号： H01L21/3105 , H01L21/768 , H01L21/465
CPC分类号： H01L21/31051 , H01L21/76819
摘要： A method for planarizing the surface of a layer in a semiconductor device includes forming conductor regions 24, 26, and 28 on a layer of the semiconductor device; forming first insulator regions 30, 32, and 34 in gaps between the conductor regions 24, 26, and 28; and forming an insulator layer 40 over the first insulator regions 30, 32, and 34, and over the conductor regions 24, 26, and 28 such that a surface of the insulator layer 40 will be substantially planar.
摘要翻译： 用于平坦化半导体器件中的层的表面的方法包括在半导体器件的层上形成导体区域24,26和28; 在导体区域24,26和28之间的间隙中形成第一绝缘体区域30,32和34; 以及在第一绝缘体区域30,32和34之上以及在导体区域24,26和28之上形成绝缘体层40，使得绝缘体层40的表面将基本上是平面的。
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公开(公告)号：US20120213941A1
公开(公告)日：2012-08-23
申请号：US13401168
申请日：2012-02-21
申请人： Louis Steen , Ludovic Godet , Patrick M. Martin
发明人： Louis Steen , Ludovic Godet , Patrick M. Martin
CPC分类号： H01L21/76814 , H01L21/02126 , H01L21/02203 , H01L21/3105 , H01L21/31155 , H01L21/76826 , H01L21/76831
摘要： A boundary between a plasma and a plasma sheath is controlled such that a portion of the shape is not parallel to a plane defined by a front surface of the workpiece facing the plasma. Ions in the plasma are directed toward the workpiece. These ions can either seal pores or clean a material from a structure on the workpiece. This structure may, for example, have multiple sidewalls. A process that both cleans a material and seals pores in the structure may be performed.
摘要翻译： 控制等离子体和等离子体鞘之间的边界，使得形状的一部分不平行于由面向等离子体的工件的前表面限定的平面。 等离子体中的离子指向工件。 这些离子可以密封孔隙或从工件上的结构清洁材料。 该结构可以例如具有多个侧壁。 可以进行清洁材料并密封结构中的孔的过程。
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10.发明申请METHOD AND SYSTEM FOR MODIFYING PHOTORESIST USING ELECTROMAGNETIC RADIATION AND ION IMPLANTATION 有权使用电磁辐射和离子植入修饰光电子的方法和系统公开(公告)号：US20120082942A1
公开(公告)日：2012-04-05
申请号：US12896036
申请日：2010-10-01
申请人： Ludovic Godet , Patrick M. Martin
发明人： Ludovic Godet , Patrick M. Martin
IPC分类号： G03F7/20
CPC分类号： C23C16/50 , G03F7/405 , G03F7/427 , G03F7/7045 , G03F7/70875 , H01J37/32357 , H01J37/32412 , H01J37/32422 , H01L21/0273
摘要： A method of reducing surface roughness of a resist feature disposed on a substrate includes generating a plasma having a plasma sheath and ions therein. A shape of the boundary between the plasma and plasma sheath is modified using a plasma sheath modifier, so that a portion of the boundary facing the substrate is not parallel to a plane defined by the substrate. During a first exposure, the resist feature is exposed to electromagnetic radiation having a desired wavelength and the ions are accelerated across the boundary having the modified shape toward the resist features over an angular range.
摘要翻译： 减少设置在基板上的抗蚀剂特征的表面粗糙度的方法包括产生具有等离子体鞘和其中的离子的等离子体。 使用等离子体护套改性剂改变等离子体和等离子体护套之间的边界的形状，使得面对衬底的边界的一部分不平行于由衬底限定的平面。 在第一曝光期间，抗蚀剂特征暴露于具有所需波长的电磁辐射，并且离子在角度范围内被加速跨过具有改变形状的边界朝向抗蚀剂特征。
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