摘要:
Disclosed is an interposer and test structure for making contact between a substrate and a test bed. One embodiment of the interposer has a floating, rigid conductive element in a nonconductive body which makes temporary contact between the test bed and the substrate. In another embodiment of the invention, the interposer includes two layers of material, in which one layer includes pogo pins for contacting the substrate and the other layer includes pads for contacting the test bed. The pogo pins are on a grid spacing corresponding to that of the substrate input/output pads while the interposer pads are on a grid spacing corresponding to that of the pogo pin contactors of the test bed.
摘要:
A system for locating electrically conductive contact points on an integrated circuit semiconductor substrate utilizes capacitance and line continuity measurements to control and direct the movement of a two-point probe tester in order to locate and precisely align each test probe with designated contact points. The system is capable of testing for continuity conditions or defects and perform other related electrical measurements.
摘要:
A multi chip module substrate arranged with repair vias and repair lines extending between repair vias of the chip sites of the module by which repairs can be effected to overcome defects in the module circuits and a method for effecting the repairs of defects in the circuits of this module. A defect can occur in any one of a first signal via, a second signal via, and a circuit line extending between and intended to electrically connect the first signal via and the second signal via. After a defective circuit is identified, the signal vias of the circuit are isolated. Then, the first signal via of the defective circuit is electrically connected to that repair via of the chip site having the first signal via that is connected to that repair via of the chip site having the second signal via and the second signal via of the defective circuit is electrically connected to that repair via of the chip site having the second signal via that is connected to that repair via of the chip site having the first signal via.
摘要:
A multilayer ceramic repair process which provides a new electrical repair path to connect top surface vias. The repair path is established between a defective net and a redundant repair net contained within the multilayer ceramic substrate. The defective net and the repair net each terminate at surface vias of the substrate. A laser is used to form post fired circuitry on and in the substrate. This is followed by the electrical isolation of the defective net from the electrical repair structure and passivation of the electrical repair line.
摘要:
A method and structure to form surface plating metallization on a substrate. Two layers of tape are applied to the surface of the substrate. A first path is cut through both layers of tape exposing the substrate surface. The first path connects at least one conductive via on the top surface of the substrate. A second path is cut through the second layer of tape exposing the first layer of tape. The second path is routed from the first path to an edge of the substrate A seed layer is deposited over the surface of the second layer of tape thereby creating a seeded plating path in the first path and a sacrificial seeded conduction path in the second path. Connecting the sacrificial seeded conduction path to a plating potential at the edge of the substrate creates a plated path on the surface of the substrate. The sacrificial path is removed when the tape is removed.
摘要:
A multilayer ceramic repair process which provides a new electrical repair path to connect top surface vias. The repair path is established between a defective net and a redundant repair net contained within the multilayer ceramic substrate. The defective net and the repair net each terminate at surface vias of the substrate. A laser is used to form post fired circuitry on and in the substrate. This is followed by the electrical isolation of the defective net from the electrical repair structure and passivation of the electrical repair line.
摘要:
An apparatus (and method) for testing a DC isolation resistance of a large capacitance network experiencing voltage stress, adds capacitance and resistance to a large resistance network under test, such that the direct current (DC) isolation resistance may be determined without distortion from the alternating current (AC) components of the circuit. The capacitance that is added is determined based on the capacitance of the object, the resistance of the object, and the resistance of the testing apparatus. In one embodiment, because the precise capacitance of the network under test may be unknown, the testing apparatus and method may utilize an additional large capacitor designed to obviate small fluctuations in the capacitance of the network.