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    High throughput solar cell ablation system
    4.
    发明授权
    High throughput solar cell ablation system 有权
    高通量太阳能电池消融系统

    公开(公告)号：US08263899B2

    公开(公告)日：2012-09-11

    申请号：US12829275

    申请日：2010-07-01

    申请人： Gabriel Harley ,  Thomas Pass ,  Peter John Cousins ,  John Viatella

    发明人： Gabriel Harley ,  Thomas Pass ,  Peter John Cousins ,  John Viatella

    IPC分类号： B23K26/067

    CPC分类号： B23K26/40 ,  B23K26/067 ,  B23K26/082 ,  B23K26/0823 ,  B23K2103/50 ,  H01L31/02168 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/202 ,  Y02E10/52 ,  Y02E10/547

    摘要： A solar cell is formed using a solar cell ablation system. The ablation system includes a single laser source and several laser scanners. The laser scanners include a master laser scanner, with the rest of the laser scanners being slaved to the master laser scanner. A laser beam from the laser source is split into several laser beams, with the laser beams being scanned onto corresponding wafers using the laser scanners in accordance with one or more patterns. The laser beams may be scanned on the wafers using the same or different power levels of the laser source.

    摘要翻译： 使用太阳能电池消融系统形成太阳能电池。 消融系统包括单个激光源和几个激光扫描仪。 激光扫描仪包括主激光扫描仪，其余的激光扫描仪从属于主激光扫描仪。 来自激光源的激光束被分成几个激光束，根据一个或多个图案，使用激光扫描仪将激光束扫描到相应的晶片上。 可以使用激光源的相同或不同功率水平在晶片上扫描激光束。

    Etching processes for solar cell fabrication
    5.
    发明授权
    Etching processes for solar cell fabrication 有权
    太阳能电池制造的蚀刻工艺

    公开(公告)号：US09419166B2

    公开(公告)日：2016-08-16

    申请号：US14975175

    申请日：2015-12-18

    申请人： Scott Harrington ,  Venkatasubramani Balu ,  Westerberg Staffan ,  Peter John Cousins

    发明人： Scott Harrington ,  Venkatasubramani Balu ,  Westerberg Staffan ,  Peter John Cousins

    IPC分类号： H01L21/00 ,  H01L31/18

    CPC分类号： H01L31/1804 ,  H01L31/022441 ,  H01L31/035281 ,  H01L31/0747 ,  H01L31/075 ,  H01L31/202 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

    摘要： A method of fabricating a solar cell can include forming a first dopant region over a silicon substrate and an oxide region over the first dopant region. In an embodiment, the oxide region can protect the first dopant region from a first etching process. In an embodiment, a second dopant region can be formed over the silicon substrate, where a mask can be formed to protect a first portion of the second dopant region from the first etching process. In an embodiment, the first etching process can be performed to expose portions of the silicon substrate and/or a silicon region. A second etching process can be performed to form a trench region to separate a first and second doped region of the solar cell. A third etching process can be performed to remove contaminants from the solar cell and remove any remaining portions of the oxide region.

    摘要翻译： 制造太阳能电池的方法可以包括在硅衬底上形成第一掺杂剂区域和在第一掺杂剂区域上形成氧化物区域。 在一个实施例中，氧化物区域可以保护第一掺杂剂区域免受第一蚀刻工艺的影响。 在一个实施例中，可以在硅衬底上形成第二掺杂剂区域，其中可以形成掩模以保护第一掺杂剂区域的第一部分不受第一蚀刻工艺的影响。 在一个实施例中，可以执行第一蚀刻工艺以暴露硅衬底和/或硅区域的部分。 可以执行第二蚀刻工艺以形成分离太阳能电池的第一和第二掺杂区域的沟槽区域。 可以进行第三蚀刻工艺以从太阳能电池去除污染物并去除氧化物区域的任何剩余部分。

    Ablation of film stacks in solar cell fabrication processes
    6.
    发明授权
    Ablation of film stacks in solar cell fabrication processes 有权
    在太阳能电池制造工艺中消除薄膜叠层

    公开(公告)号：US08409902B1

    公开(公告)日：2013-04-02

    申请号：US13486095

    申请日：2012-06-01

    申请人： Gabriel Harley ,  Taeseok Kim ,  Peter John Cousins

    发明人： Gabriel Harley ,  Taeseok Kim ,  Peter John Cousins

    IPC分类号： H01L21/00

    CPC分类号： H01L31/18 ,  B23K26/0622 ,  B23K26/384 ,  B23K26/40 ,  B23K26/402 ,  B23K2103/172 ,  B23K2103/50 ,  H01L31/02167 ,  H01L31/0682 ,  Y02E10/547 ,  Y10S438/94

    摘要： A dielectric film stack of a solar cell is ablated using a laser. The dielectric film stack includes a layer that is absorptive in a wavelength of operation of the laser source. The laser source, which fires laser pulses at a pulse repetition rate, is configured to ablate the film stack to expose an underlying layer of material. The laser source may be configured to fire a burst of two laser pulses or a single temporally asymmetric laser pulse within a single pulse repetition to achieve complete ablation in a single step.

    摘要翻译： 使用激光烧蚀太阳能电池的电介质膜堆叠。 电介质膜堆叠包括在激光源的工作波长中吸收的层。 以脉冲重复频率激发激光脉冲的激光源被配置为烧蚀膜堆以暴露下层材料。 激光源可以被配置为在单个脉冲重复中触发两个激光脉冲或单个时间不对称激光脉冲的脉冲，以在单个步骤中实现完全消融。

    Back side contact solar cell structures and fabrication processes
    7.
    发明授权
    Back side contact solar cell structures and fabrication processes 有权
    背面接触太阳能电池结构和制造工艺

    公开(公告)号：US07820475B2

    公开(公告)日：2010-10-26

    申请号：US11643743

    申请日：2006-12-20

    申请人： Denis De Ceuster ,  Peter John Cousins ,  Richard M. Swanson ,  Jane E. Manning

    发明人： Denis De Ceuster ,  Peter John Cousins ,  Richard M. Swanson ,  Jane E. Manning

    IPC分类号： H01L21/225 ,  H01L31/0224

    CPC分类号： H01L31/18 ,  H01L31/022433 ,  H01L31/02363 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： In one embodiment, active diffusion junctions of a solar cell are formed by diffusing dopants from dopant sources selectively deposited on the back side of a wafer. The dopant sources may be selectively deposited using a printing method, for example. Multiple dopant sources may be employed to form active diffusion regions of varying doping levels. For example, three or four active diffusion regions may be fabricated to optimize the silicon/dielectric, silicon/metal, or both interfaces of a solar cell. The front side of the wafer may be textured prior to forming the dopant sources using a texturing process that minimizes removal of wafer material. Openings to allow metal gridlines to be connected to the active diffusion junctions may be formed using a self-aligned contact opening etch process to minimize the effects of misalignments.

    摘要翻译： 在一个实施例中，太阳能电池的有源扩散接合通过从掺杂源选择性地沉积在晶片的背面上的掺杂剂扩散而形成。 可以使用例如印刷方法选择性地沉积掺杂剂源。 可以使用多种掺杂剂源来形成具有不同掺杂浓度的有源扩散区域。 例如，可以制造三个或四个有源扩散区以优化太阳能电池的硅/电介质，硅/金属或两个界面。 在使用使晶片材料的去除最小化的纹理化工艺形成掺杂剂源之前，可以对晶片的前侧进行纹理化。 允许金属网格线连接到有源扩散结的开口可以使用自对准的接触开口蚀刻工艺形成，以最小化未对准的影响。

    Generation Of Contact Masks For Inkjet Printing On Solar Cell Substrates
    8.
    发明申请
    Generation Of Contact Masks For Inkjet Printing On Solar Cell Substrates 有权
    在太阳能电池基板上生成用于喷墨印刷的接触面罩

    公开(公告)号：US20100075234A1

    公开(公告)日：2010-03-25

    申请号：US12234970

    申请日：2008-09-22

    申请人： Peter John Cousins

    发明人： Peter John Cousins

    IPC分类号： G03F1/06 ,  B41J31/00

    CPC分类号： H01L31/022425 ,  H01L31/18 ,  Y02E10/50

    摘要： A contact mask for inkjet printing on a solar cell substrate may be generated by creating a printing bitmap of contacts to be printed on the solar cell substrate. The contacts may be located on the solar cell substrate by mapping coordinates of the printing bitmap to coordinates of the solar cell substrate as positioned in the inkjet printer. The location of the contacts on the solar cell substrate may be defined relative to a location on the solar cell substrate, such as relative to center of mass. The contact mask may be printed by the inkjet printer using the printing bitmap and location information of the contacts.

    摘要翻译： 可以通过产生要印刷在太阳能电池基板上的触点的打印位图来生成用于太阳能电池基板上的喷墨打印的接触掩模。 通过将打印位图的坐标映射到位于喷墨打印机中的太阳能电池基板的坐标，可以将触点放置在太阳能电池基板上。 可以相对于太阳能电池基板上的位置（例如相对于质心）来限定太阳能电池基板上的触点的位置。 可以使用打印位图和触点的位置信息由喷墨打印机打印接触掩模。

    VOLTAGE BREAKDOWN DEVICE FOR SOLAR CELLS
    10.
    发明申请
    VOLTAGE BREAKDOWN DEVICE FOR SOLAR CELLS 审中-公开

    公开(公告)号：US20170288068A1

    公开(公告)日：2017-10-05

    申请号：US15085594

    申请日：2016-03-30

    申请人： Peter John Cousins

    发明人： Peter John Cousins

    IPC分类号： H01L31/028 ,  H01L31/0224 ,  H01L31/0216 ,  H01L31/18

    CPC分类号： H01L31/0284 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/0443 ,  H01L31/1804 ,  Y02E10/50

    摘要： Voltage breakdown devices for solar cells are described. For example, a solar cell includes a semiconductor substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A plurality of conductive contacts is coupled to the plurality of alternating N-type and P-type semiconductor regions. A voltage breakdown device is disposed above the substrate. The voltage breakdown device includes one of the plurality of conductive contacts in electrical contact with one of the N-type semiconductor regions and with one of the P-type semiconductor regions of the plurality of alternating N-type and P-type semiconductor regions disposed in or above the substrate.