公开(公告)号：US20050277299A1

公开(公告)日：2005-12-15

申请号：US10856679

申请日：2004-05-28

申请人： Quang Le ,  Sue Zhang

发明人： Quang Le ,  Sue Zhang

IPC分类号： G11B5/31 ,  H01L21/311 ,  H01L21/314

CPC分类号： C23C16/44 ,  G11B5/3163 ,  G11B5/3169 ,  H01L21/3146

摘要： The fabrication of the read head sensor components where chemical mechanical polishing (CMP) stop layer is deposited above the sensor layers, a first reactive ion etch (RIE) layer and a second RIE layer are deposited, where the second RIE layer is etchable with a different ion species than the first RIE layer. A stencil layer is then deposited and patterned to create an etching stencil having the desired magnetic read track width of the sensor. An RIE step is then conducted in which the second RIE layer is etched. An RIE step for the first RIE layer is then conducted with a different ion species. Thereafter, the sensor layers are milled where the remaining portions of the first and second RIE layers act as a milling mask. A CMP assisted liftoff step is then conducted in which the remaining portions of the ion milling mask are removed.

摘要翻译： 沉积化学机械抛光（CMP）停止层沉积在传感器层上方，第一反应离子蚀刻（RIE）层和第二RIE层的读取头传感器部件的制造，其中第二RIE层可以用 不同的离子种类比第一个RIE层。 然后沉积和图案化模板层以产生具有传感器的期望磁读取磁道宽度的蚀刻模版。 然后进行RIE步骤，其中蚀刻第二RIE层。 然后用不同的离子种类进行第一RIE层的RIE步骤。 此后，将第一和第二RIE层的剩余部分用作铣削掩模的传感器层进行研磨。 然后进行CMP辅助剥离步骤，其中除去离子铣削掩模的剩余部分。

公开(公告)号：US20050241140A1

公开(公告)日：2005-11-03

申请号：US10836867

申请日：2004-04-30

申请人： Amanda Baer ,  Quang Le ,  Kim Lee ,  Aron Pentek ,  Douglas Werner ,  Sue Zhang

发明人： Amanda Baer ,  Quang Le ,  Kim Lee ,  Aron Pentek ,  Douglas Werner ,  Sue Zhang

IPC分类号： G11B5/127 ,  G11B5/187

CPC分类号： G11B5/1871 ,  G11B5/3116 ,  G11B5/3163 ,  Y10T29/49021 ,  Y10T29/49043

摘要： A method for constructing a tapered write pole, the method including the use of a bilayer hard mask.

摘要翻译： 一种用于构造锥形写入极的方法，该方法包括使用双层硬掩模。

公开(公告)号：US20060002024A1

公开(公告)日：2006-01-05

申请号：US10884368

申请日：2004-06-30

申请人： Quang Le ,  Jui-Lung Li ,  Yvette Nga Winton ,  Sue Zhang ,  Yi Zheng

发明人： Quang Le ,  Jui-Lung Li ,  Yvette Nga Winton ,  Sue Zhang ,  Yi Zheng

IPC分类号： G11B5/147

CPC分类号： G11B5/3163 ,  G11B5/1278 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A method and apparatus for defining leading edge taper of a write pole tip is disclosed. The fabrication process uses reactive ion etching to fabricate LET with tight control of the placement of LET's edge and to achieve higher angle for providing a higher effective write field at the pole tip while minimizing ATI for high-density perpendicular recording. The placement of a resist's edge is used to define the LET's edge and a CMP process is used to provide a planar surface for the fabrication of the write pole.

摘要翻译： 公开了一种用于限定写入磁极尖端的前缘锥形的方法和装置。 制造工艺使用反应离子蚀刻来制造LET，可以严格控制LET的边缘放置，并实现更高的角度，以便在磁极尖端提供更高的有效写入场，同时最大限度地降低ATI用于高密度垂直记录。 使用抗蚀剂边缘的放置来定义LET的边缘，并且使用CMP工艺来提供用于制造写入极的平面。

公开(公告)号：US08615868B2

公开(公告)日：2013-12-31

申请号：US13306887

申请日：2011-11-29

申请人： Yongchul Ahn ,  Xiaozhong Dang ,  Quang Le ,  Simon H. Liao

发明人： Yongchul Ahn ,  Xiaozhong Dang ,  Quang Le ,  Simon H. Liao

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3193 ,  G11B5/398 ,  G11B2005/3996 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A method for manufacturing a magnetic sensor that includes depositing a plurality of mask layers, then forming a stripe height defining mask over the sensor layers. A first ion milling is performed just sufficiently to remove portions of the free layer that are not protected by the stripe height defining mask, the first ion milling being terminated at the non-magnetic barrier or spacer layer. A dielectric layer is then deposited, preferably by ion beam deposition. A second ion milling is then performed to remove portions of the pinned layer structure that are not protected by the mask, the free layer being protected during the second ion milling by the dielectric layer.

摘要翻译： 一种用于制造磁传感器的方法，包括沉积多个掩模层，然后在传感器层上形成条纹高度限定掩模。 执行第一离子铣削足以除去未被条形高度限定掩模保护的自由层的部分，第一离子铣削在非磁性阻挡层或间隔层处终止。 然后优选通过离子束沉积沉积介电层。 然后执行第二离子铣削以去除未被掩模保护的钉扎层结构的部分，在通过介电层进行第二离子铣削期间保护自由层。

公开(公告)号：US08553371B2

公开(公告)日：2013-10-08

申请号：US12954508

申请日：2010-11-24

申请人： Honglin Zhu ,  Liubo Hong ,  Hicham M. Sougrati ,  Quang Le ,  Jui-Lung Li ,  Chando Park

发明人： Honglin Zhu ,  Liubo Hong ,  Hicham M. Sougrati ,  Quang Le ,  Jui-Lung Li ,  Chando Park

IPC分类号： G11B5/39

CPC分类号： G11B5/3163 ,  G01R33/098 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/3932

摘要： Embodiments herein generally relate to TMR readers and methods for their manufacture. The embodiments discussed herein disclose TMR readers that utilize a structure that avoids use of the DLC layer over the sensor structure and over the hard bias layer. The capping structure over the sensor structure functions as both a protective layer for the sensor structure and a CMP stop layer. The hard bias capping structure functions as both a protective structure for the hard bias layer and as a CMP stop layer. The capping structures that are free of DLC reduce the formation of notches in the second shield layer so that second shield layer is substantially flat.

摘要翻译： 本文的实施方案通常涉及TMR读取器及其制造方法。 本文讨论的实施例公开了TMR读取器，其利用了避免在传感器结构上以及硬偏置层上使用DLC层的结构。 传感器结构上的封盖结构用作传感器结构的保护层和CMP停止层。 硬偏置封盖结构既用作硬偏置层的保护结构又用作CMP停止层。 没有DLC的封盖结构减少了第二屏蔽层中的凹口的形成，使得第二屏蔽层基本上是平的。

公开(公告)号：US20130083432A1

公开(公告)日：2013-04-04

申请号：US13249076

申请日：2011-09-29

申请人： Quang Le ,  Simon H. Liao ,  Shuxia Wang ,  Guangli Liu ,  Yongchul Ahn

发明人： Quang Le ,  Simon H. Liao ,  Shuxia Wang ,  Guangli Liu ,  Yongchul Ahn

IPC分类号： G11B5/60 ,  G11B5/127

CPC分类号： G11B5/3163 ,  G01R33/093 ,  G11B5/3932 ,  G11B5/398 ,  Y10T29/49048

摘要： A magnetic read head having a hard bias structure that both optimizes magnetic bias field and also ensures manufacturability while maintaining sensor stripe height integrity. The read head includes a sensor stack having a back edge and first and second laterally opposed sides. A hard bias structure extending from each of the first and second sides of the sensor stack has a neck portion located near the sensor and having a back edge that is aligned with and parallel to the back edge of the sensor stack. The hard bias structure also includes a flared portion having a back edge that defines an angle relative to the air bearing surface of the read head. The back edge preferably defines and angle of 45-75 degrees relative to the air bearing surface.

摘要翻译： 具有硬偏置结构的磁读头，其既优化磁偏置场，又确保可制造性，同时保持传感器条高度的完整性。 读头包括具有后边缘和第一和第二横向相对侧的传感器堆叠。 从传感器堆叠的第一和第二侧的每一个延伸的硬偏压结构具有位于传感器附近的颈部，并且具有与传感器堆叠的后边缘对准并平行的后边缘。 硬偏置结构还包括具有相对于读头的空气支承表面限定角度的后边缘的扩口部分。 后边缘优选地限定相对于空气轴承表面45-75度的角度。

公开(公告)号：US20130001187A1

公开(公告)日：2013-01-03

申请号：US13172739

申请日：2011-06-29

申请人： Quang Le ,  Shin Funada ,  Jui-Lung Li

发明人： Quang Le ,  Shin Funada ,  Jui-Lung Li

IPC分类号： G11B5/127 ,  C23F1/00 ,  B05D5/12

CPC分类号： G03F7/20 ,  B82Y10/00 ,  G11B5/3169 ,  G11B5/3909 ,  G11B2005/3996

摘要： A method for manufacturing a magnetic sensor using an electrical lapping guide deposited and patterned simultaneously with a hard bias structure of the sensor material. The method includes depositing a sensor material, and patterning and ion milling the sensor material to define a track width of the sensor. A magnetic, hard bias material is then deposited and a second patterning and ion milling process is performed to simultaneously define the back edge of an electrical lapping guide and a back edge of the sensor.

摘要翻译： 一种用传感器材料的硬偏置结构沉积和图案化的电研磨导向器制造磁传感器的方法。 该方法包括沉积传感器材料，以及图案化和离子铣削传感器材料以限定传感器的轨道宽度。 然后沉积磁性，硬偏置材料，并且执行第二图案化和离子铣削工艺以同时限定电研磨引导件的后边缘和传感器的后边缘。

公开(公告)号：US08252516B2

公开(公告)日：2012-08-28

申请号：US12261241

申请日：2008-10-30

申请人： Quang Le ,  Jui-Lung Li

发明人： Quang Le ,  Jui-Lung Li

IPC分类号： G11B5/127

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11B5/3116 ,  G11B5/398 ,  Y10T29/49032 ,  Y10T29/49043

摘要： Embodiments of the invention operate to narrow the track width of a read head used in a disk drive. In one embodiment, a magnetic read head has a track width of about 40 nm or less. The read head is fabricated by a method that includes fabricating a film stack from a substrate, a sensor material, a stop material, a first release material, a mask material, and a photo resist material. The mask material may include a masking substrate material and a second release material. The film stack is processed by forming a read head image in the photo resist material, removing portions of the film stack that lie outside the read head image of the photo resist material, stripping the film stack to remove the photo resist, mask and first release materials, and milling the sensor material according to the read head image.

摘要翻译： 本发明的实施例用于缩小磁盘驱动器中使用的读取头的磁道宽度。 在一个实施例中，磁读头具有约40nm或更小的轨道宽度。 读取头通过包括从基底，传感器材料，止挡材料，第一释放材料，掩模材料和光致抗蚀剂材料制造薄膜叠层的方法制造。 掩模材料可以包括掩蔽衬底材料和第二释放材料。 通过在光致抗蚀剂材料中形成读头图像来处理胶片堆叠，去除位于光致抗蚀剂材料的读取头图像之外的膜堆叠的部分，剥离胶片堆叠以除去光致抗蚀剂，掩模和第一释放 材料，并根据读头图像铣削传感器材料。

公开(公告)号：US20120125884A1

公开(公告)日：2012-05-24

申请号：US12954437

申请日：2010-11-24

申请人： Ki S. Chung ,  Vincent Gemena ,  Quang Le ,  Eileen Yan

发明人： Ki S. Chung ,  Vincent Gemena ,  Quang Le ,  Eileen Yan

IPC分类号： C23F1/00

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B2005/3996

摘要： A method for manufacturing a magnetic read head having a very narrow track width. The method includes the use of a non-Si containing photoresist to form a mask prior to ion milling to define the track-width of the sensor. Previously only Si-containing resists were used. The Si in the resist turned to an oxide, which allowed the photoresist to withstand the reactive ion etching used for image transfer to an underlying hard mask. The Si-containing resist, however, has limitations as to how small the mask can be made. It has been found that a non-Si-containing resist provides better resolution at very narrow track-width definition, and also provides good temperature resistance. Some modifications to the process allow the non-Si-containing resist to be used in the construction of the magnetic read sensor.

摘要翻译： 一种制造具有非常窄轨道宽度的磁读头的方法。 该方法包括使用非Si含光致抗蚀剂在离子铣削之前形成掩模以限定传感器的轨道宽度。 以前只使用含硅的抗蚀剂。 抗蚀剂中的Si转变为氧化物，这使得光致抗蚀剂能承受用于图像转移到下面的硬掩模的反应离子蚀刻。 然而，含Si抗蚀剂对于可以制造掩模有多小有限制。 已经发现，非含硅抗蚀剂在非常窄的轨道宽度定义下提供更好的分辨率，并且还提供良好的耐温性。 对该过程的一些修改允许在构造磁读取传感器中使用非含Si抗蚀剂。

公开(公告)号：US08136227B2

公开(公告)日：2012-03-20

申请号：US11247081

申请日：2005-10-11

申请人： Michael Feldbaum ,  Quang Le ,  Edward H. Lee ,  Neil L. Robertson ,  Charles G. Seegel, III

发明人： Michael Feldbaum ,  Quang Le ,  Edward H. Lee ,  Neil L. Robertson ,  Charles G. Seegel, III

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： G11B5/1278 ,  G11B5/3106 ,  G11B5/3133 ,  G11B5/3967 ,  G11B5/40 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A magnetic head having non-GMR shunt for perpendicular recording and method for making magnetic head having non-GMR shunt for perpendicular recording is disclosed. A shunt is provided for shunting charge from a read sensor. The shunt is formed co-planar with the read sensor and is fabricated using non-GMR materials.

摘要翻译： 公开了一种具有用于垂直记录的非GMR分路的磁头和用于制造具有用于垂直记录的非GMR分路的磁头的方法。 提供分流器用于从读取传感器分流电荷。 分流器与读取传感器形成共面并且使用非GMR材料制造。