公开(公告)号：US20060002024A1

公开(公告)日：2006-01-05

申请号：US10884368

申请日：2004-06-30

申请人： Quang Le ,  Jui-Lung Li ,  Yvette Nga Winton ,  Sue Zhang ,  Yi Zheng

发明人： Quang Le ,  Jui-Lung Li ,  Yvette Nga Winton ,  Sue Zhang ,  Yi Zheng

IPC分类号： G11B5/147

CPC分类号： G11B5/3163 ,  G11B5/1278 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A method and apparatus for defining leading edge taper of a write pole tip is disclosed. The fabrication process uses reactive ion etching to fabricate LET with tight control of the placement of LET's edge and to achieve higher angle for providing a higher effective write field at the pole tip while minimizing ATI for high-density perpendicular recording. The placement of a resist's edge is used to define the LET's edge and a CMP process is used to provide a planar surface for the fabrication of the write pole.

摘要翻译： 公开了一种用于限定写入磁极尖端的前缘锥形的方法和装置。 制造工艺使用反应离子蚀刻来制造LET，可以严格控制LET的边缘放置，并实现更高的角度，以便在磁极尖端提供更高的有效写入场，同时最大限度地降低ATI用于高密度垂直记录。 使用抗蚀剂边缘的放置来定义LET的边缘，并且使用CMP工艺来提供用于制造写入极的平面。

公开(公告)号：US20050277299A1

公开(公告)日：2005-12-15

申请号：US10856679

申请日：2004-05-28

申请人： Quang Le ,  Sue Zhang

发明人： Quang Le ,  Sue Zhang

IPC分类号： G11B5/31 ,  H01L21/311 ,  H01L21/314

CPC分类号： C23C16/44 ,  G11B5/3163 ,  G11B5/3169 ,  H01L21/3146

摘要： The fabrication of the read head sensor components where chemical mechanical polishing (CMP) stop layer is deposited above the sensor layers, a first reactive ion etch (RIE) layer and a second RIE layer are deposited, where the second RIE layer is etchable with a different ion species than the first RIE layer. A stencil layer is then deposited and patterned to create an etching stencil having the desired magnetic read track width of the sensor. An RIE step is then conducted in which the second RIE layer is etched. An RIE step for the first RIE layer is then conducted with a different ion species. Thereafter, the sensor layers are milled where the remaining portions of the first and second RIE layers act as a milling mask. A CMP assisted liftoff step is then conducted in which the remaining portions of the ion milling mask are removed.

摘要翻译： 沉积化学机械抛光（CMP）停止层沉积在传感器层上方，第一反应离子蚀刻（RIE）层和第二RIE层的读取头传感器部件的制造，其中第二RIE层可以用 不同的离子种类比第一个RIE层。 然后沉积和图案化模板层以产生具有传感器的期望磁读取磁道宽度的蚀刻模版。 然后进行RIE步骤，其中蚀刻第二RIE层。 然后用不同的离子种类进行第一RIE层的RIE步骤。 此后，将第一和第二RIE层的剩余部分用作铣削掩模的传感器层进行研磨。 然后进行CMP辅助剥离步骤，其中除去离子铣削掩模的剩余部分。

公开(公告)号：US20050241140A1

公开(公告)日：2005-11-03

申请号：US10836867

申请日：2004-04-30

申请人： Amanda Baer ,  Quang Le ,  Kim Lee ,  Aron Pentek ,  Douglas Werner ,  Sue Zhang

发明人： Amanda Baer ,  Quang Le ,  Kim Lee ,  Aron Pentek ,  Douglas Werner ,  Sue Zhang

IPC分类号： G11B5/127 ,  G11B5/187

CPC分类号： G11B5/1871 ,  G11B5/3116 ,  G11B5/3163 ,  Y10T29/49021 ,  Y10T29/49043

摘要： A method for constructing a tapered write pole, the method including the use of a bilayer hard mask.

摘要翻译： 一种用于构造锥形写入极的方法，该方法包括使用双层硬掩模。

公开(公告)号：US20070026537A1

公开(公告)日：2007-02-01

申请号：US11184364

申请日：2005-07-18

申请人： Ming Jiang ,  Sue Zhang ,  Yi Zheng

发明人： Ming Jiang ,  Sue Zhang ,  Yi Zheng

IPC分类号： G11B5/33 ,  H01L21/00

CPC分类号： G11B5/3163 ,  G11B5/1278

摘要： A method using a CMP resistant hardmask in a process of fabricating a pole piece for a magnetic head is described. A set of layers used as the mask for milling the pole piece preferably includes a CMP resistant hardmask of silicon dioxide, a resist hardmask, an upper hardmask and a photoresist mask respectively. A multi-step reactive-ion etching (RIE) process is preferably used to sequentially remove the excess materials in the layer stack to ultimately define the multilayer mask for the pole piece. The excess pole piece material is then milled away. The wafer is then refilled with a nonmagnetic material such as alumina. A CMP liftoff is used to remove the resist hardmask. The material for the CMP resistant hardmask is selected to have a high resistance to the CMP liftoff process in comparison to the refill material. The CMP resistant hardmask is preferably then removed by a RIE process.

摘要翻译： 描述了在制造用于磁头的极片的工艺中使用CMP耐磨硬掩模的方法。 作为用于研磨极片的掩模的一组层优选分别包括二氧化硅的CMP耐磨硬掩模，抗蚀剂硬掩模，上硬掩模和光致抗蚀剂掩模。 优选使用多步反应离子蚀刻（RIE）工艺来顺序地去除层叠中的多余材料以最终限定极片的多层掩模。 然后将多余的极片材料磨掉。 然后用非磁性材料如氧化铝再填充晶片。 CMP剥离用于去除抗蚀剂硬掩模。 选择用于CMP耐磨硬掩模的材料以与补充材料相比具有对CMP剥离工艺的高抗性。 然后优选通过RIE工艺去除CMP耐磨硬掩模。

公开(公告)号：US20060286292A1

公开(公告)日：2006-12-21

申请号：US11151626

申请日：2005-06-13

申请人： Ming Jiang ,  Ning Shi ,  Sue Zhang ,  Yi Zheng

发明人： Ming Jiang ,  Ning Shi ,  Sue Zhang ,  Yi Zheng

IPC分类号： B05D5/12 ,  C23C16/00

CPC分类号： G11B5/3106 ,  C23C28/00 ,  C23C28/322 ,  C23C28/341 ,  C23C28/343 ,  C23C28/345 ,  C23C28/347 ,  C23C28/42 ,  G11B5/3163

摘要： An improved method of fabricating thin-film magnetic recording heads is disclosed. For the method, one or more layers for a feature (such as a read element, a write element, etc) are deposited and patterned. A layer of adhesion material is then deposited on the layers of the feature. The adhesion material provides better adhesion to a Diamond-Like Carbon (DLC) layer and to the underlying feature surface, such as monolithic Silicon (Si) or Titanium (Ti). A layer of DLC material is then deposited on the layer of adhesion material. The steps of depositing the layer of adhesion material and the layer of DLC material are repeated more than one time. Thus, more than one set of alternating layers of adhesion material and DLC material are deposited on the layers of the feature to form a multi-layer protective coating on the feature.

摘要翻译： 公开了一种制造薄膜磁记录头的改进方法。 对于该方法，一个或多个特征层（如读取元素，写入元件等）被沉积和图案化。 然后将一层粘合材料沉积在特征层上。 粘合材料提供对类金刚石碳（DLC）层和底层特征表面（例如单片硅（Si）或钛（Ti））的更好的附着力。 然后将DLC材料层沉积在粘合材料层上。 沉积粘合材料层和DLC材料层的步骤重复一次以上。 因此，多于一组交替层的粘合材料和DLC材料沉积在特征层上，以在该特征上形成多层保护涂层。

公开(公告)号：US20050266357A1

公开(公告)日：2005-12-01

申请号：US10857151

申请日：2004-05-28

申请人： Amanda Baer ,  Nian-Xiang Sun ,  Sue Zhang ,  Yi Zheng

发明人： Amanda Baer ,  Nian-Xiang Sun ,  Sue Zhang ,  Yi Zheng

IPC分类号： G03F7/00 ,  G03F9/00

CPC分类号： G03F9/7084 ,  G03F9/7076 ,  G03F9/708

摘要： A method of enhancing alignment marks defined in a relatively thin layer on a wafer by etching the alignment marks into an underlying alignment mark transfer layer is described. The target area for the alignment marks is prepared by depositing material for the transfer layer. In alternative embodiments an oversized trench is formed in the target area prior to the deposition of the transfer layer. The alignment marks can fabricated in the layer(s) deposited by the existing process or alternatively, the original layers can be removed and replaced with a layer of material selected to have comparable etching properties (definition layer).

摘要翻译： 描述了通过将对准标记蚀刻到下面的对准标记转印层中来增强在晶片上相对薄的层中限定的对准标记的方法。 通过沉积用于转印层的材料来制备对准标记的目标区域。 在替代实施例中，在沉积转移层之前，在目标区域中形成尺寸过大的沟槽。 对准标记可以在通过现有工艺沉积的层中制造，或者替代地，原始层可被移除并被选择为具有相当的蚀刻性质（定义层）的材料层替代。

公开(公告)号：US20050152064A1

公开(公告)日：2005-07-14

申请号：US11040387

申请日：2005-01-20

申请人： Daniel Bedell ,  Richard Hsiao ,  James Jarratt ,  Patrick Webb ,  Sue Zhang

发明人： Daniel Bedell ,  Richard Hsiao ,  James Jarratt ,  Patrick Webb ,  Sue Zhang

IPC分类号： G11B5/17 ,  G11B5/31 ,  G11B5/147

CPC分类号： G11B5/313 ,  G11B5/3123 ,  G11B5/3163 ,  Y10T29/49021 ,  Y10T29/49032 ,  Y10T29/4906 ,  Y10T29/49064 ,  Y10T29/49073

摘要： A system and method are provided for manufacturing a coil structure for a magnetic head. Initially, an insulating layer is deposited with a photoresist layer deposited on the insulating layer. Moreover, a silicon dielectric layer is deposited on the photoresist layer as a hard mask. The silicon dielectric layer is then masked. A plurality of channels is subsequently formed in the silicon dielectric layer using reactive ion etching (i.e. CF4/CHF3). The silicon dielectric layer is then used as a hard mask to transfer the channel pattern in the photoresist layer using reactive ion etching with, for example, H2/N2/CH3F/C2H4 reducing chemistry. To obtain an optimal channel profile with the desired high aspect ratio, channel formation includes a first segment defining a first angle and a second segment defining a second angle. Thereafter, a conductive seed layer is deposited in the channels and the channels are filled with a conductive material to define a coil structure. Chemical-mechanical polishing may then be used to planarize the conductive material.

摘要翻译： 提供一种用于制造用于磁头的线圈结构的系统和方法。 首先，沉积有沉积在绝缘层上的光致抗蚀剂层的绝缘层。 此外，硅介电层作为硬掩模沉积在光致抗蚀剂层上。 然后掩蔽硅介电层。 随后使用反应离子蚀刻（即CF 4 / CH 3）3在硅介电层中形成多个通道。 然后将硅介电层用作硬掩模，以使用例如H 2/2 N 2 / CH的反应离子蚀刻将光致抗蚀剂层中的沟道图案转印 还原化学反应。 为了获得具有期望的高纵横比的最佳通道轮廓，通道形成包括限定第一角度的第一段和限定第二角度的第二段。 此后，导电种子层沉积在通道中，并且通道填充有导电材料以限定线圈结构。 然后可以使用化学机械抛光来平坦化导电材料。

公开(公告)号：US20060231523A1

公开(公告)日：2006-10-19

申请号：US11453681

申请日：2006-06-14

申请人： Amanda Baer ,  Hamid Balamane ,  Michael Feldbaum ,  Ming Jiang ,  Aron Pentek ,  Neil Robertson ,  Sue Zhang

发明人： Amanda Baer ,  Hamid Balamane ,  Michael Feldbaum ,  Ming Jiang ,  Aron Pentek ,  Neil Robertson ,  Sue Zhang

IPC分类号： B44C1/22 ,  G11B5/127

CPC分类号： G11B5/3163 ,  G11B5/1278 ,  G11B5/1871 ,  G11B5/3169 ,  Y10T29/49032 ,  Y10T29/49039 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A perpendicular write head includes a beveled main pole having corners defining a track width and having a planarized surface and encapsulated on either side thereof and below by an alumina layer, the alumina layer having a polished surface and extending above the main pole on either side thereof as steps.

摘要翻译： 垂直写头包括具有限定轨道宽度并且具有平坦化表面并且在其两侧和下方由氧化铝层封装的角的倾斜主极，所述氧化铝层具有抛光表面并且在其两侧的主极上方延伸 作为步骤。

公开(公告)号：US20060028762A1

公开(公告)日：2006-02-09

申请号：US11195532

申请日：2005-08-01

申请人： Yunxiao Gao ,  Hung-Chin Guthrie ,  Ming Jiang ,  Sue Zhang

发明人： Yunxiao Gao ,  Hung-Chin Guthrie ,  Ming Jiang ,  Sue Zhang

IPC分类号： G11B5/127

CPC分类号： G11B5/1871 ,  G11B5/1278 ,  G11B5/3163 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A perpendicular write head includes a main pole comprising a Durimide/Alumina hard mask formed over a laminate layer process to form the main pole without using a liftoff or chemical mechanical polishing process, thereby avoiding rounding corners of the pole, the main pole being controlled in shape for improved control of critical dimension of track width and angle of the bevel to avoid undesirable adjacent track writing.

摘要翻译： 垂直写头包括主极，其包括形成在层压层工艺上的Durimide /氧化铝硬掩模，以形成主极，而不使用剥离或化学机械抛光工艺，从而避免极的圆角，主极被控制在 形状，用于改善斜面的轨道宽度和角度的临界尺寸的控制，以避免不期望的相邻轨道写入。

公开(公告)号：US20050264949A1

公开(公告)日：2005-12-01

申请号：US10857036

申请日：2004-05-28

申请人： Yunxiao Gao ,  Aron Pentek ,  Alan Tam ,  Sue Zhang

发明人： Yunxiao Gao ,  Aron Pentek ,  Alan Tam ,  Sue Zhang

IPC分类号： G11B5/127 ,  G11B5/31 ,  G11B5/33

CPC分类号： G11B5/3136 ,  G11B5/3106 ,  G11B5/3133 ,  G11B5/3163 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A giant magnetoresistive (GMR) head contains an overcoat layer consisting of silicon dioxide or silicon nitride. These materials have a coefficient of thermal expansion (CTE) that is less than alumina, which is conventionally used for the overcoat layer. As a result, the overcoat layer exhibits a smaller temperature-induced protrusion when the head heats up from friction with the passing air stream. The process of forming the head includes forming a recess in the overcoat layer that reduces the stress on the poles and improves the performance of the head. The process includes depositing a seed layer over the overcoat layer in preparation to plating a metal mask layer with an opening where the recess is to be formed, wet chemical etching the seed layer through the opening in the mask layer and performing an ion milling process to remove any remaining traces of the seed layer. With the seed layer completely removed, a trench having smooth sidewalls and bottom can be etched in the overcoat layer by a reactive ion etch (RIE) process. The saw that is used to separate the head elements in the wafer can be passed through the clean trench without contacting the overcoat layer, thereby avoiding the chipping and cracking that might otherwise result from the use of a silicon dioxide or silicon nitride overcoat layer.

摘要翻译： 巨磁阻（GMR）磁头包含由二氧化硅或氮化硅组成的外涂层。 这些材料的热膨胀系数（CTE）小于通常用于外涂层的氧化铝。 结果，当头部与通过的空气流的摩擦加热时，外涂层表现出较小的温度引起的突起。 形成头部的过程包括在外涂层中形成凹陷，其减小了磁极上的应力并提高了磁头的性能。 该方法包括在外涂层上沉积种子层，以准备对具有要形成凹部的开口镀金属掩模层，通过掩模层中的开口湿化学蚀刻晶种层并执行离子铣削加工 去除种子层的剩余痕迹。 随着种子层完全去除，可以通过反应离子蚀刻（RIE）工艺在覆盖层中蚀刻具有平滑侧壁和底部的沟槽。 用于分离晶片中的头元件的锯可以通过干净的沟槽而不与外涂层接触，从而避免由于使用二氧化硅或氮化硅外涂层而导致的切屑和裂纹。