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1.发明申请公开(公告)号：US20070263691A1
公开(公告)日：2007-11-15
申请号：US11782150
申请日：2007-07-24
CPC分类号： H01S5/065
摘要： A semiconductor device comprises an active region (4), a cladding layer (5,7), and a saturable absorbing layer (6) disposed within the cladding layer. The saturable absorbing layer comprises at least one portion (11a) that is absorbing for light emitted by the active region and comprises at least portion (11b) that is not absorbing for light emitted by the active region. The fabrication method of the invention enables the non-absorbing portion(s) (11b) of the saturable absorbing layer (6) to produced after the device structure has been fabricated. This allows the degree of overlap between the non-absorbing portion(s) (11b) of the saturable absorbing layer (6) and the optical mode of the laser to be altered after the device has been grown.
摘要翻译： 半导体器件包括有源区（4），包覆层（5,7）和设置在包覆层内的可饱和吸收层（6）。 可饱和吸收层包括吸收由有源区发射的光的至少一部分（11a），并且包括至少部分（11b），该部分不吸收由有源区发射的光。 本发明的制造方法能够在器件结构制造之后产生可饱和吸收层（6）的非吸收部分（11b）。 这允许在器件生长之后，可饱和吸收层（6）的非吸收部分（11b）和激光器的光学模式之间的重叠程度将被改变。
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公开(公告)号：US07605011B2
公开(公告)日：2009-10-20
申请号：US11782150
申请日：2007-07-24
IPC分类号： H01L21/00
CPC分类号： H01S5/065
摘要： A semiconductor device comprises an active region (4), a cladding layer (5,7), and a saturable absorbing layer (6) disposed within the cladding layer. The saturable absorbing layer comprises at least one portion (11a) that is absorbing for light emitted by the active region and comprises at least portion (11b) that is not absorbing for light emitted by the active region.The fabrication method of the invention enables the non-absorbing portion(s) (11b) of the saturable absorbing layer (6) to produced after the device structure has been fabricated. This allows the degree of overlap between the non-absorbing portion(s) (11b) of the saturable absorbing layer (6) and the optical mode of the laser to be altered after the device has been grown.
摘要翻译： 半导体器件包括有源区（4），包覆层（5,7）和设置在包覆层内的可饱和吸收层（6）。 可饱和吸收层包括吸收由有源区发射的光的至少一个部分（11a），并且包括至少部分（11b），该部分不吸收由有源区发射的光。 本发明的制造方法能够在制造器件结构之后制造可饱和吸收层（6）的非吸收部分（11b）。 这允许在器件生长之后，可饱和吸收层（6）的非吸收部分（11b）与激光器的光学模式之间的重叠程度将被改变。
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公开(公告)号：US07263115B2
公开(公告)日：2007-08-28
申请号：US10815603
申请日：2004-04-01
IPC分类号： H01S5/00
CPC分类号： H01S5/065
摘要： A semiconductor device comprises an active region (4), a cladding layer (5,7), and a saturable absorbing layer (6) disposed within the cladding layer. The saturable absorbing layer comprises at least one portion (11a) that is absorbing for light emitted by the active region and comprises at least portion (11b) that is not absorbing for light emitted by the active region.The fabrication method of the invention enables the non-absorbing portion(s) (11b) of the saturable absorbing layer (6) to produced after the device structure has been fabricated. This allows the degree of overlap between the non-absorbing portion(s) (11b) of the saturable absorbing layer (6) and the optical mode of the laser to be altered after the device has been grown.
摘要翻译： 半导体器件包括有源区（4），包覆层（5,7）和设置在包覆层内的可饱和吸收层（6）。 可饱和吸收层包括吸收由有源区发射的光的至少一部分（11a），并且包括至少部分（11b），该部分不吸收由有源区发射的光。 本发明的制造方法能够在器件结构制造之后产生可饱和吸收层（6）的非吸收部分（11b）。 这允许在器件生长之后，可饱和吸收层（6）的非吸收部分（11b）和激光器的光学模式之间的重叠程度将被改变。
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公开(公告)号：US09326348B2
公开(公告)日：2016-04-26
申请号：US12663880
申请日：2008-03-23
CPC分类号： H05B33/0872 , G01J1/32 , G01J1/4204 , G01J3/10 , G01J3/50 , G01J3/505 , H05B33/0857 , H05B33/0869
摘要： An illumination system comprises at least two light sources (101,102,103) having different emission spectra to one another; a detection circuit (131,132,133) for sensing a light intensity using at least one of the light sources as a photosensor; and driving means (161,162,163) for driving the light source in dependence on the sensed spectral distribution of light. The emission spectrum of a light source with the smallest bandgap overlaps the emission spectrum of a light source with the second-smallest bandgap. The illumination system is possible to measure the intensity of light emitted by the light source with the smallest bandgap by putting the light source with the second-smallest bandgap in detection mode. The illumination system may also sense the spectral distribution of ambient light, to allow the output from the illumination system to be adjusted in dependence on the ambient light.
摘要翻译： 照明系统包括彼此具有不同发射光谱的至少两个光源（101,102,103）; 检测电路（131,132,133），用于使用所述光源中的至少一个作为光传感器感测光强度; 和驱动装置（161,162,163），用于根据检测到的光的光谱分布来驱动光源。 具有最小带隙的光源的发射光谱与具有第二小带隙的光源的发射光谱重叠。 照明系统可以通过将具有第二小带隙的光源放置在检测模式中来测量具有最小带隙的光源发射的光的强度。 照明系统还可以感测环境光的光谱分布，以允许根据环境光来调节来自照明系统的输出。
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公开(公告)号：US20100182294A1
公开(公告)日：2010-07-22
申请号：US12663880
申请日：2008-03-23
CPC分类号： H05B33/0872 , G01J1/32 , G01J1/4204 , G01J3/10 , G01J3/50 , G01J3/505 , H05B33/0857 , H05B33/0869
摘要： An illumination system comprises at least two light sources (101,102,103) having different emission spectra to one another; a detection circuit (131,132,133) for sensing a light intensity using at least one of the light sources as a photosensor; and driving means (161,162,163) for driving the light source in dependence on the sensed spectral distribution of light. The emission spectrum of a light source with the smallest bandgap overlaps the emission spectrum of a light source with the second-smallest bandgap. The illumination system is possible to measure the intensity of light emitted by the light source with the smallest bandgap by putting the light source with the second-smallest bandgap in detection mode. The illumination system may also sense the spectral distribution of ambient light, to allow the output from the illumination system to be adjusted in dependence on the ambient light.
摘要翻译： 照明系统包括彼此具有不同发射光谱的至少两个光源（101,102,103）; 检测电路（131,132,133），用于使用所述光源中的至少一个作为光传感器感测光强度; 和驱动装置（161,162,163），用于根据检测到的光的光谱分布来驱动光源。 具有最小带隙的光源的发射光谱与具有第二小带隙的光源的发射光谱重叠。 照明系统可以通过将具有第二小带隙的光源放置在检测模式中来测量具有最小带隙的光源发射的光的强度。 照明系统还可以感测环境光的光谱分布，以允许根据环境光来调节来自照明系统的输出。
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6.发明授权公开(公告)号：US07375367B2
公开(公告)日：2008-05-20
申请号：US10974348
申请日：2004-10-27
IPC分类号： H01L29/06
CPC分类号： B82Y20/00 , H01S5/0213 , H01S5/3407 , H01S5/34333 , H01S2304/00
摘要： A semiconductor light-emitting device fabricated in a nitride material system has an active region disposed over a substrate. The active region comprises a first aluminium-containing layer forming the lowermost layer of the active region, a second aluminium-containing layer forming the uppermost layer of the active region, and at least one InGaN quantum well layer disposed between the first aluminium-containing layer and the second aluminum-containing layer. The aluminium-containing layers provide improved carrier confinement in the active region, and so increase the output optical power of the device.
摘要翻译： 在氮化物材料系统中制造的半导体发光器件具有设置在衬底上的有源区域。 有源区包括形成有源区的最下层的第一含铝层，形成有源区的最上层的第二含铝层和设置在第一含铝层之间的至少一个InGaN量子阱层 和第二含铝层。 含铝层在有源区域中提供改进的载流子限制，因此增加了器件的输出光功率。
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公开(公告)号：US20060237740A1
公开(公告)日：2006-10-26
申请号：US10525406
申请日：2003-08-18
CPC分类号： C30B23/02 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02631
摘要： A method of growing an AlGaN semiconductor layer structure by Molecular Beam Epitaxy comprises supplying ammonia, gallium and aluminium to a growth chamber thereby to grow a first (Al,Ga)N layer by MBE over a substrate disposed in the growth chamber. The first (Al,Ga)N layer has a non-zero aluminium mole fraction. Ammonia is supplied at a beam equivalent pressure of at least 1 10−4 mbar, gallium is supplied at a beam equivalent pressure of at least 1 10−8 mbar and aluminium is supplied at a beam equivalent pressure of at least 1 10−8 mbar during the growth step. Once the first (Al,Ga)N layer has been grown, varying the supply rate of gallium and/or aluminium enables a second (Al,Ga)N layer, having a different aluminium mole fraction from the first (Al,Ga)N layer to be grown by MBE over the first (Al,Ga)N layer. This process may be repeated to grown an (Al,Ga)N multilayer structure.
摘要翻译： 通过分子束外延生长AlGaN半导体层结构的方法包括向生长室供应氨，镓和铝，从而通过MBE在设置在生长室中的衬底上生长第一（Al，Ga）N层。 第一（Al，Ga）N层具有非零的铝摩尔分数。 以至少1×10 -4巴的光束当量压力供应氨，镓以至少1×10 -8巴的光束当量压力供应，铝是 在生长步骤期间以至少1×10 -8 mbar的束当量压力供应。 一旦生长了第一（Al，Ga）N层，则改变镓和/或铝的供应速率使得能够形成具有与第一（Al，Ga）N不同的铝摩尔分数的第二（Al，Ga）N层 层由MBE在第一（Al，Ga）N层上生长。 可以重复该过程以生长（Al，Ga）N多层结构。
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公开(公告)号：US20050163179A1
公开(公告)日：2005-07-28
申请号：US10974207
申请日：2004-10-27
IPC分类号： H01S5/343 , H01L21/203 , H01S5/30 , H01S5/323 , H01S5/00
CPC分类号： H01S5/32341 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02631 , H01S2304/02
摘要： A method of fabricating a continuous wave semiconductor laser diode in the (Al,Ga,In)N materials system comprises: growing, in sequence, a first cladding region (4), a first optical guiding region (5), an active region (6), a second optical guiding region (7) and a second cladding region (8). Each of the first cladding region (4), the first optical guiding region (5), the active region (6), the second optical guiding region (7) and the second cladding region (8) is deposited by molecular beam epitaxy.
摘要翻译： （Al，Ga，In）N材料系统中制造连续波半导体激光二极管的方法包括：依次生长第一包层区域（4），第一光导区域（5），有源区域 6），第二光导区域（7）和第二包层区域（8）。 第一包层区域（4），第一导光区域（5），有源区域（6），第二光导区域（7）和第二包层区域（8）中的每一个通过分子束外延沉积。
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9.发明申请公开(公告)号：US20060244002A1
公开(公告)日：2006-11-02
申请号：US11380440
申请日：2006-04-27
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L29/155 , H01L29/2003 , H01L33/0095 , H01L33/025 , H01S5/2004 , H01S5/3063 , H01S5/3216 , H01S5/34333
摘要： A method of manufacturing a nitride semiconductor device comprises the steps of: growing an InxGa1-xN (0≦x≦1) layer, and growing an aluminium-containing nitride semiconductor layer over the InxGa1-xN layer at a growth temperature of at least 500° C. so as to form an electron gas region at an interface between the InxGa1-xN layer and the nitride semiconductor layer. The nitride semiconductor layer is then annealed at a temperature of at least 800° C. The method of the invention can provide an electron gas having a sheet carrier density of 6×1013 cm−2 or greater. An electron gas with such a high sheet carrier concentration can be obtained with an aluminium-containing nitride semiconductor layer having a relatively low aluminium concentration, such as an aluminium mole fraction of 0.3 or below, and without the need to dope the aluminium-containing nitride semiconductor layer or the InxGa1-xN layer.
摘要翻译： 一种制造氮化物半导体器件的方法包括以下步骤：生长In 1 x 1 Ga 1-x N（0 <= x <= 1）层，并生长 含铝氮化物半导体层，在至少500℃的生长温度下在In 1 x 1 Ga 1-x N层上形成电子气区域 在In 1 x 1 Ga 1-x N层和氮化物半导体层之间的界面。 然后将氮化物半导体层在至少800℃的温度下退火。本发明的方法可以提供具有6×10 13 cm -2以上的片载体密度的电子气体， SUP>或更大。 具有如此高的片状载流子浓度的电子气体可以用具有相对较低的铝浓度的铝含量的氮化物半导体层，例如0.3或更低的铝摩尔分数，并且不需要掺杂含铝氮化物 半导体层或In 1 x 1 Ga 1-x N层。
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公开(公告)号：US20050249253A1
公开(公告)日：2005-11-10
申请号：US11030791
申请日：2005-01-07
CPC分类号： H01S5/227 , H01L33/007 , H01S5/0213 , H01S5/2215 , H01S5/2224 , H01S5/2275 , H01S5/32341 , H01S2301/173
摘要： A semiconductor light-emitting device and a method of manufacture thereof A method of manufacturing a semiconductor light-emitting device comprises selectively etching a semiconductor layer structure (16) fabricated in a nitride materials system and including an aluminium-containing cladding region or an aluminium-containing optical guiding region (5). The etching step forms a mesa (17), and also exposes one or more portions of the aluminium-containing cladding region or the aluminium-containing optical guiding region (5). The or each exposed portion of the aluminium-containing cladding region or the aluminium-containing optical guiding region (5) Is then oxidised to form a current blocking layer (18) laterally adjacent to and extending laterally from the mesa. When an electrically conductive contact layer (11) is deposited, the current blocking layer (18) will prevent the contact layer (11) from making direct contact with the buffer layer (3).
摘要翻译： 一种半导体发光器件及其制造方法。一种制造半导体发光器件的方法包括：选择性地蚀刻在氮化物材料体系中制造的半导体层结构（16），并且包括含铝包层区域或铝 - （5）。 蚀刻步骤形成台面（17），并且还暴露含铝包层区域或含铝光导区域（5）的一个或多个部分。 然后，含铝包覆区域或含铝光导区域（5）的暴露部分或含铝的光导引区域（5）被氧化以形成横向邻近并从台面横向延伸的电流阻挡层（18）。 当沉积导电接触层（11）时，电流阻挡层（18）将防止接触层（11）与缓冲层（3）直接接触。
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