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公开(公告)号：US09326348B2
公开(公告)日：2016-04-26
申请号：US12663880
申请日：2008-03-23
CPC分类号： H05B33/0872 , G01J1/32 , G01J1/4204 , G01J3/10 , G01J3/50 , G01J3/505 , H05B33/0857 , H05B33/0869
摘要： An illumination system comprises at least two light sources (101,102,103) having different emission spectra to one another; a detection circuit (131,132,133) for sensing a light intensity using at least one of the light sources as a photosensor; and driving means (161,162,163) for driving the light source in dependence on the sensed spectral distribution of light. The emission spectrum of a light source with the smallest bandgap overlaps the emission spectrum of a light source with the second-smallest bandgap. The illumination system is possible to measure the intensity of light emitted by the light source with the smallest bandgap by putting the light source with the second-smallest bandgap in detection mode. The illumination system may also sense the spectral distribution of ambient light, to allow the output from the illumination system to be adjusted in dependence on the ambient light.
摘要翻译： 照明系统包括彼此具有不同发射光谱的至少两个光源（101,102,103）; 检测电路（131,132,133），用于使用所述光源中的至少一个作为光传感器感测光强度; 和驱动装置（161,162,163），用于根据检测到的光的光谱分布来驱动光源。 具有最小带隙的光源的发射光谱与具有第二小带隙的光源的发射光谱重叠。 照明系统可以通过将具有第二小带隙的光源放置在检测模式中来测量具有最小带隙的光源发射的光的强度。 照明系统还可以感测环境光的光谱分布，以允许根据环境光来调节来自照明系统的输出。
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公开(公告)号：US20100182294A1
公开(公告)日：2010-07-22
申请号：US12663880
申请日：2008-03-23
CPC分类号： H05B33/0872 , G01J1/32 , G01J1/4204 , G01J3/10 , G01J3/50 , G01J3/505 , H05B33/0857 , H05B33/0869
摘要： An illumination system comprises at least two light sources (101,102,103) having different emission spectra to one another; a detection circuit (131,132,133) for sensing a light intensity using at least one of the light sources as a photosensor; and driving means (161,162,163) for driving the light source in dependence on the sensed spectral distribution of light. The emission spectrum of a light source with the smallest bandgap overlaps the emission spectrum of a light source with the second-smallest bandgap. The illumination system is possible to measure the intensity of light emitted by the light source with the smallest bandgap by putting the light source with the second-smallest bandgap in detection mode. The illumination system may also sense the spectral distribution of ambient light, to allow the output from the illumination system to be adjusted in dependence on the ambient light.
摘要翻译： 照明系统包括彼此具有不同发射光谱的至少两个光源（101,102,103）; 检测电路（131,132,133），用于使用所述光源中的至少一个作为光传感器感测光强度; 和驱动装置（161,162,163），用于根据检测到的光的光谱分布来驱动光源。 具有最小带隙的光源的发射光谱与具有第二小带隙的光源的发射光谱重叠。 照明系统可以通过将具有第二小带隙的光源放置在检测模式中来测量具有最小带隙的光源发射的光的强度。 照明系统还可以感测环境光的光谱分布，以允许根据环境光来调节来自照明系统的输出。
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公开(公告)号：US07605011B2
公开(公告)日：2009-10-20
申请号：US11782150
申请日：2007-07-24
IPC分类号： H01L21/00
CPC分类号： H01S5/065
摘要： A semiconductor device comprises an active region (4), a cladding layer (5,7), and a saturable absorbing layer (6) disposed within the cladding layer. The saturable absorbing layer comprises at least one portion (11a) that is absorbing for light emitted by the active region and comprises at least portion (11b) that is not absorbing for light emitted by the active region.The fabrication method of the invention enables the non-absorbing portion(s) (11b) of the saturable absorbing layer (6) to produced after the device structure has been fabricated. This allows the degree of overlap between the non-absorbing portion(s) (11b) of the saturable absorbing layer (6) and the optical mode of the laser to be altered after the device has been grown.
摘要翻译： 半导体器件包括有源区（4），包覆层（5,7）和设置在包覆层内的可饱和吸收层（6）。 可饱和吸收层包括吸收由有源区发射的光的至少一个部分（11a），并且包括至少部分（11b），该部分不吸收由有源区发射的光。 本发明的制造方法能够在制造器件结构之后制造可饱和吸收层（6）的非吸收部分（11b）。 这允许在器件生长之后，可饱和吸收层（6）的非吸收部分（11b）与激光器的光学模式之间的重叠程度将被改变。
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4.发明申请公开(公告)号：US20070263691A1
公开(公告)日：2007-11-15
申请号：US11782150
申请日：2007-07-24
CPC分类号： H01S5/065
摘要： A semiconductor device comprises an active region (4), a cladding layer (5,7), and a saturable absorbing layer (6) disposed within the cladding layer. The saturable absorbing layer comprises at least one portion (11a) that is absorbing for light emitted by the active region and comprises at least portion (11b) that is not absorbing for light emitted by the active region. The fabrication method of the invention enables the non-absorbing portion(s) (11b) of the saturable absorbing layer (6) to produced after the device structure has been fabricated. This allows the degree of overlap between the non-absorbing portion(s) (11b) of the saturable absorbing layer (6) and the optical mode of the laser to be altered after the device has been grown.
摘要翻译： 半导体器件包括有源区（4），包覆层（5,7）和设置在包覆层内的可饱和吸收层（6）。 可饱和吸收层包括吸收由有源区发射的光的至少一部分（11a），并且包括至少部分（11b），该部分不吸收由有源区发射的光。 本发明的制造方法能够在器件结构制造之后产生可饱和吸收层（6）的非吸收部分（11b）。 这允许在器件生长之后，可饱和吸收层（6）的非吸收部分（11b）和激光器的光学模式之间的重叠程度将被改变。
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公开(公告)号：US07263115B2
公开(公告)日：2007-08-28
申请号：US10815603
申请日：2004-04-01
IPC分类号： H01S5/00
CPC分类号： H01S5/065
摘要： A semiconductor device comprises an active region (4), a cladding layer (5,7), and a saturable absorbing layer (6) disposed within the cladding layer. The saturable absorbing layer comprises at least one portion (11a) that is absorbing for light emitted by the active region and comprises at least portion (11b) that is not absorbing for light emitted by the active region.The fabrication method of the invention enables the non-absorbing portion(s) (11b) of the saturable absorbing layer (6) to produced after the device structure has been fabricated. This allows the degree of overlap between the non-absorbing portion(s) (11b) of the saturable absorbing layer (6) and the optical mode of the laser to be altered after the device has been grown.
摘要翻译： 半导体器件包括有源区（4），包覆层（5,7）和设置在包覆层内的可饱和吸收层（6）。 可饱和吸收层包括吸收由有源区发射的光的至少一部分（11a），并且包括至少部分（11b），该部分不吸收由有源区发射的光。 本发明的制造方法能够在器件结构制造之后产生可饱和吸收层（6）的非吸收部分（11b）。 这允许在器件生长之后，可饱和吸收层（6）的非吸收部分（11b）和激光器的光学模式之间的重叠程度将被改变。
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公开(公告)号：US20110186879A1
公开(公告)日：2011-08-04
申请号：US13084877
申请日：2011-04-12
IPC分类号： H01L33/00
CPC分类号： H01L29/76 , B82Y10/00 , H01L27/15 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/42392 , H01L29/66439 , H01L29/775 , H01L29/78642 , H01L29/78696 , H01L33/08 , H01L33/20 , H01L2924/0002 , H01L2924/00
摘要： A method comprises forming elongate structures (5) on a first substrate (3), such that the material composition of each elongate structure (7) varies along its length so as to define first and second physically different sections in the elongate structures. First and second physically different devices (1,2) are then defined in the elongate structures. Alternatively, the first and second physically different sections may be defined in the elongate structures after they have been fabricated. The elongate structures may be encapsulated and transferred to a second substrate (7). The invention provides an improved method for the formation of a circuit structure that requires first and second physically different devices (1,2) to be provided on a common substrate. In particular, only one transfer step is necessary.
摘要翻译： 一种方法包括在第一基板（3）上形成细长结构（5），使得每个细长结构（7）的材料组成沿其长度变化，从而在细长结构中限定第一和第二物理上不同的部分。 然后在细长结构中限定第一和第二物理上不同的装置（1,2）。 或者，第一和第二物理上不同的部分可以在它们被制造之后在细长结构中限定。 细长结构可以被封装并转移到第二衬底（7）。 本发明提供了一种用于形成电路结构的改进方法，其需要在公共基板上提供第一和第二物理上不同的装置（1,2）。 特别地，仅需要一个转移步骤。
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公开(公告)号：US07951694B2
公开(公告)日：2011-05-31
申请号：US12200188
申请日：2008-08-28
IPC分类号： H01L21/20
CPC分类号： H01L21/02461 , C30B23/02 , C30B25/02 , C30B29/40 , C30B29/403 , C30B33/02 , H01L21/02381 , H01L21/02458 , H01L21/02463 , H01L21/02502 , H01L21/0254 , H01L21/02631 , H01L29/2003
摘要： A method of manufacturing a nitride semiconductor structure includes disposing a semiconductor substrate in a molecular beam epitaxy reactor; growing a wetting layer comprising AlxInyGa(1−(x+y))As(0≦x+y≦1) or AlxInyGa(1−(x+y))P(0≦x+y≦1) on the substrate; in-situ annealing the wetting layer; growing a first AlGaInN layer on the wetting layer using plasma activated nitrogen as the source of nitrogen with an additional flux of phosphorous or arsenic; and growing a second AlGaInN layer on the first AlGaInN layer using ammonia as a source of nitrogen.
摘要翻译： 制造氮化物半导体结构的方法包括将半导体衬底设置在分子束外延反应器中; 在衬底上生长包含Al x In y Ga（1-（x + y））As（0＆amp; nE; x + y＆nlE; 1）或Al x In y Ga（1-（x + y））P（0和nlE; x + y和nlE; 1） 原位退火润湿层; 使用等离子体活化氮作为氮源，再加入磷或砷的助熔剂，在润湿层上生长第一AlGaInN层; 以及使用氨作为氮源在所述第一AlGaInN层上生长第二AlGaInN层。
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公开(公告)号：US07648577B2
公开(公告)日：2010-01-19
申请号：US10536706
申请日：2003-11-27
IPC分类号： C30B25/14
CPC分类号： C30B23/02 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02579 , H01L21/0262
摘要： A method of growing a p-type nitride semiconductor material by molecular beam epitaxy (MBE) uses bis(cyclopentadienyl)magnesium (Cp2Mg) as the source of magnesium dopant atoms. Ammonia gas is used as the nitrogen precursor for the MBE growth process. To grow p-type GaN, for example, by the method of the invention, gallium, ammonia and Cp2Mg are supplied to an MBE growth chamber; to grow p-type AlGaN, aluminum is additionally supplied to the growth chamber. The growth process of the invention produces a p-type carrier concentration, as measured by room temperature Hall effect measurements, of up to 2 1017 cm−3, without the need for any post-growth step of activating the dopant atoms.
摘要翻译： 通过分子束外延（MBE）生长p型氮化物半导体材料的方法使用双（环戊二烯基）镁（Cp2Mg）作为镁掺杂剂原子的源。 使用氨气作为MBE生长过程的氮前体。 为了生长p型GaN，例如，通过本发明的方法，将镓，氨和Cp2Mg供给至MBE生长室; 为了生长p型AlGaN，另外向生长室供给铝。 本发明的生长方法通过室温霍尔效应测量产生高达2×1017cm-3的p型载流子浓度，而不需要任何激活掺杂剂原子的后期生长步骤。
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9.发明授权公开(公告)号：US07375367B2
公开(公告)日：2008-05-20
申请号：US10974348
申请日：2004-10-27
IPC分类号： H01L29/06
CPC分类号： B82Y20/00 , H01S5/0213 , H01S5/3407 , H01S5/34333 , H01S2304/00
摘要： A semiconductor light-emitting device fabricated in a nitride material system has an active region disposed over a substrate. The active region comprises a first aluminium-containing layer forming the lowermost layer of the active region, a second aluminium-containing layer forming the uppermost layer of the active region, and at least one InGaN quantum well layer disposed between the first aluminium-containing layer and the second aluminum-containing layer. The aluminium-containing layers provide improved carrier confinement in the active region, and so increase the output optical power of the device.
摘要翻译： 在氮化物材料系统中制造的半导体发光器件具有设置在衬底上的有源区域。 有源区包括形成有源区的最下层的第一含铝层，形成有源区的最上层的第二含铝层和设置在第一含铝层之间的至少一个InGaN量子阱层 和第二含铝层。 含铝层在有源区域中提供改进的载流子限制，因此增加了器件的输出光功率。
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公开(公告)号：US20060237740A1
公开(公告)日：2006-10-26
申请号：US10525406
申请日：2003-08-18
CPC分类号： C30B23/02 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02631
摘要： A method of growing an AlGaN semiconductor layer structure by Molecular Beam Epitaxy comprises supplying ammonia, gallium and aluminium to a growth chamber thereby to grow a first (Al,Ga)N layer by MBE over a substrate disposed in the growth chamber. The first (Al,Ga)N layer has a non-zero aluminium mole fraction. Ammonia is supplied at a beam equivalent pressure of at least 1 10−4 mbar, gallium is supplied at a beam equivalent pressure of at least 1 10−8 mbar and aluminium is supplied at a beam equivalent pressure of at least 1 10−8 mbar during the growth step. Once the first (Al,Ga)N layer has been grown, varying the supply rate of gallium and/or aluminium enables a second (Al,Ga)N layer, having a different aluminium mole fraction from the first (Al,Ga)N layer to be grown by MBE over the first (Al,Ga)N layer. This process may be repeated to grown an (Al,Ga)N multilayer structure.
摘要翻译： 通过分子束外延生长AlGaN半导体层结构的方法包括向生长室供应氨，镓和铝，从而通过MBE在设置在生长室中的衬底上生长第一（Al，Ga）N层。 第一（Al，Ga）N层具有非零的铝摩尔分数。 以至少1×10 -4巴的光束当量压力供应氨，镓以至少1×10 -8巴的光束当量压力供应，铝是 在生长步骤期间以至少1×10 -8 mbar的束当量压力供应。 一旦生长了第一（Al，Ga）N层，则改变镓和/或铝的供应速率使得能够形成具有与第一（Al，Ga）N不同的铝摩尔分数的第二（Al，Ga）N层 层由MBE在第一（Al，Ga）N层上生长。 可以重复该过程以生长（Al，Ga）N多层结构。
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