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    Light-absorbing antireflective layers with improved performance due to refractive index optimization
    1.
    发明授权
    Light-absorbing antireflective layers with improved performance due to refractive index optimization 有权
    由于折射率优化而具有改进性能的吸光抗反射层

    公开(公告)号：US06274295B1

    公开(公告)日：2001-08-14

    申请号：US09264616

    申请日：1999-03-08

    申请人： Ralph R. Dammel ,  Robert A. Norwood

    发明人： Ralph R. Dammel ,  Robert A. Norwood

    IPC分类号： G03F700

    CPC分类号： G03F7/091 ,  Y10S430/151

    摘要： The invention consists of a light absorbing top antireflective layer that reduces the swing curve amplitude for photoresist materials used in the semiconductor industry. The coating may be water based but is not necessarily so. The advantage of a water-based coating is its ease of use, since it can be applied without intermixing to the softbaked photoresist, and is removed in the development step, so that process complexity is only minimally increased. One problem that has been associated with the existing non-absorbing antireflective coatings is that the optimum swing curve reduction is only achieved at a very low refractive index. The advantages of a dyed coating are a) that the refractive index of the top coat can additionally be lowered by making use of anomalous dispersion effects if the dye is chosen judiciously, and b) that it is possible to achieve the optimum swing curve reduction at a higher refractive index of the top coat. By a combination of these two effects, the present invention demonstrates a reduction of the swing curve close to the theoretical minimum value, which constitutes a substantial improvement over existing antireflective topcoats.

    摘要翻译： 本发明包括一种光吸收顶部抗反射层，其减少半导体工业中使用的光致抗蚀剂材料的摆动曲线幅度。 涂层可以是水性的，但不一定如此。 水性涂​​料的优点是其易于使用，因为它可以在不与软烘烤的光致抗蚀剂混合的情况下进行应用，并且在显影步骤中被去除，使得仅仅最小程度地提高了工艺复杂性。 与现有的非吸收性抗反射涂层相关联的一个问题是仅在非常低的折射率下实现最佳摆动曲线减小。 染色涂层的优点是a）如果染色被明智地选择，则可以通过利用异常色散效应来额外降低顶涂层的折射率，以及b）可以实现最佳的摆动曲线减小 顶部涂层的折射率较高。 通过这两种效果的组合，本发明证明了接近理论最小值的摆动曲线的减小，这相对于现有的抗反射面漆构成了实质的改进。

    Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds
    5.
    发明授权
    Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds 有权
    用于深紫外光刻的光致抗蚀剂组合物，其包含光活性化合物的混合物

    公开(公告)号：US06991888B2

    公开(公告)日：2006-01-31

    申请号：US10439472

    申请日：2003-05-16

    申请人： Munirathna Padmanaban ,  Takanori Kudo ,  Sangho Lee ,  Ralph R. Dammel ,  M. Dalil Rahman

    发明人： Munirathna Padmanaban ,  Takanori Kudo ,  Sangho Lee ,  Ralph R. Dammel ,  M. Dalil Rahman

    IPC分类号： G03F7/004 ,  C08F2/46 ,  C07C53/00 ,  G03C5/00

    CPC分类号： G03F7/0392 ,  G03F7/0045 ,  Y10S430/115

    摘要： The present invention relates to a novel photoresist composition that can be developed with an aqueous alkaline solution, and is capable of being imaged at exposure wavelengths in the deep ultraviolet. The invention also relates to a process for imaging the novel photoresist as well as novel photoacid generators.The novel photoresist comprises a) a polymer containing an acid labile group, and b) a novel mixture of photoactive compounds, where the mixture comprises a lower absorbing compound selected from structure 1 and 2, and a higher absorbing compound selected from structure 4 and 5, where, R1 and R2 R5, R6, R7, R8, and R9 are defined herein; m=1–5; X− is an anion, and Ar is selected from naphthyl, anthracyl, and structure 3, where R30, R31, R32, R33, and R34 are defined herein.

    摘要翻译： 本发明涉及一种可用碱性水溶液显影的新型光刻胶组合物，能够在深紫外线的曝光波长下成像。 本发明还涉及用于对新型光致抗蚀剂以及新型光酸产生剂进行成像的方法。 新型光致抗蚀剂包含a）含有酸不稳定基团的聚合物，和b）光活性化合物的新混合物，其中该混合物包含选自结构1和2的较低吸收化合物和选自结构4和5的较高吸收化合物 ，其中R 1和R 2 R 5，R 6，R 7，或N R 8，R 9和R 9在本文中定义; m = 1-5; X - 是阴离子，Ar选自萘基，蒽基和结构3，其中R 30，R 31，R SUB > 32，R 33和R 34在本文中定义。

    Photoresist composition for deep ultraviolet lithography
    7.
    发明授权
    Photoresist composition for deep ultraviolet lithography 失效
    用于深紫外光刻的光刻胶组合物

    公开(公告)号：US06737215B2

    公开(公告)日：2004-05-18

    申请号：US09853732

    申请日：2001-05-11

    申请人： Ralph R. Dammel ,  Raj Sakamuri

    发明人： Ralph R. Dammel ,  Raj Sakamuri

    IPC分类号： G03F7004

    CPC分类号： G03F7/0382 ,  G03F7/0395 ,  Y10S430/106 ,  Y10S430/111

    摘要： The present invention relates to a photoresist composition sensitive in the deep ultraviolet region and a method of processing the photoresist, where the photoresist comprises a novel copolymer, a photoactive component, and a solvent. The novel copolymer comprises a unit derived from an ethylenically unsaturated compound containing at least one cyano functionality and a unit derived from an unsaturated cyclic non aromatic compound.

    摘要翻译： 本发明涉及在深紫外区域敏感的光致抗蚀剂组合物和光致抗蚀剂的加工方法，其中光致抗蚀剂包含新的共聚物，光敏组分和溶剂。 新型共聚物包含衍生自含有至少一个氰基官能团的烯键式不饱和化合物的单元和衍生自不饱和环非芳族化合物的单元。

    Photoresist composition for deep UV and process thereof
    8.
    发明授权
    Photoresist composition for deep UV and process thereof 失效
    用于深紫外线的光致抗蚀剂组合物及其工艺

    公开(公告)号：US06447980B1

    公开(公告)日：2002-09-10

    申请号：US09619336

    申请日：2000-07-19

    申请人： M. Dalil Rahman ,  Munirathna Padmanaban ,  Ralph R. Dammel

    发明人： M. Dalil Rahman ,  Munirathna Padmanaban ,  Ralph R. Dammel

    IPC分类号： G03C1492

    CPC分类号： G03F7/0397 ,  G03F7/0045 ,  G03F7/0395 ,  Y10S430/115

    摘要： The present invention relates to a chemically amplified system, which is, sensitive to wavelengths between 300 nm and 100 nm, and comprises a) a polymer that is insoluble an aqueous alkaline solution and comprises at least one acid labile group, b) a compound capable of producing an acid upon radiation. The present invention comprises a polymer that is made from a alicyclic hydrocarbon olefin, an acrylate with a pendant cyclic moeity, and a cyclic anhydride. The present invention also relates to a process for imaging such a photoresist.

    摘要翻译： 本发明涉及一种化学放大系统，其对300nm至100nm之间的波长敏感，并且包括a）不溶于碱性水溶液并且包含至少一种酸不稳定基团的聚合物，b）具有能力的化合物 在辐射时产生酸。 本发明包括由脂环烃烯烃，具有侧链环状的丙烯酸酯和环状酸酐制成的聚合物。 本发明还涉及这种光致抗蚀剂的成像方法。