Method of fabricating an ultra thin quartz resonator component
    2.
    发明授权
    Method of fabricating an ultra thin quartz resonator component 有权
    制造超薄石英谐振器元件的方法

    公开(公告)号:US07802356B1

    公开(公告)日:2010-09-28

    申请号:US12034852

    申请日:2008-02-21

    IPC分类号: H04R31/00

    CPC分类号: H03H9/172 H03H3/04

    摘要: A method for manufacturing a resonator is presented in the present application. The method includes providing a handle substrate, providing a host substrate, providing a quartz substrate comprising a first surface opposite a second surface, applying interposer film to the first surface of the quartz substrate, bonding the quartz substrate to the handle substrate wherein the interposer film is disposed between the quartz substrate and the handle substrate, thinning the second surface of the quartz substrate, removing a portion of the bonded quartz substrate to expose a portion of the interposer film, bonding the quartz substrate to the host substrate, and removing the handle substrate and the interposer film, thereby releasing the quartz substrate.

    摘要翻译: 在本申请中提出了一种用于制造谐振器的方法。 该方法包括提供处理衬底,提供主体衬底,提供包括与第二表面相对的第一表面的石英衬底,将中介层膜施加到石英衬底的第一表面,将石英衬底接合到处理衬底,其中插入膜 设置在石英基板和手柄基板之间,使石英基板的第二表面变薄,去除一部分键合的石英基板以暴露中间层膜的一部分,将石英基板接合到主基板,并且移除手柄 基板和内插膜,从而释放石英基板。

    Cloverleaf microgyroscope with through-wafer interconnects and method of manufacturing a cloverleaf microgyroscope with through-wafer interconnects
    3.
    发明授权
    Cloverleaf microgyroscope with through-wafer interconnects and method of manufacturing a cloverleaf microgyroscope with through-wafer interconnects 失效
    具有晶片间互连的三叶草微型陀螺仪和具有贯穿晶片互连的三叶草微型制造器的制造方法

    公开(公告)号:US07671431B1

    公开(公告)日:2010-03-02

    申请号:US11330376

    申请日:2006-01-10

    IPC分类号: H01L23/00

    CPC分类号: G01C19/5719 H01L21/76898

    摘要: The present invention relates to a method of manufacturing a cloverleaf microgyroscope containing an integrated post comprising: attaching a post wafer to a resonator wafer, forming a bottom post from the post wafer being attached to the resonator wafer, preparing a base wafer with through-wafer interconnects, attaching the resonator wafer to the base wafer, wherein the bottom post fits into a post hole in the base wafer, forming a top post from the resonator wafer, wherein the bottom and top post are formed symmetrically around the same axis, and attaching a cap wafer on top of the base wafer.

    摘要翻译: 本发明涉及一种制造含有一体式立柱的三叶草微陀螺的方法,其特征在于,包括:将后晶片连接到谐振晶片,从后晶片形成底柱,附着于谐振晶片,制备带晶圆的基晶片 互连,将谐振器晶片连接到基底晶片,其中底部支架装配到基底晶片中的柱孔中,从谐振器晶片形成顶部柱,其中底部和顶部柱围绕相同的轴线对称地形成,并且附接 在基底晶片顶部的盖子晶片。

    Method of fabrication an ultra-thin quartz resonator
    4.
    发明授权
    Method of fabrication an ultra-thin quartz resonator 有权
    制造超薄石英谐振器的方法

    公开(公告)号:US08769802B1

    公开(公告)日:2014-07-08

    申请号:US12831028

    申请日:2010-07-06

    IPC分类号: H04R31/00

    CPC分类号: H03H9/172 H03H3/04

    摘要: A method for manufacturing a resonator is presented in the present application. The method includes providing a handle substrate, providing a host substrate, providing a quartz substrate comprising a first surface opposite a second surface, applying interposer film to the first surface of the quartz substrate, bonding the quartz substrate to the handle substrate wherein the interposer film is disposed between the quartz substrate and the handle substrate, thinning the second surface of the quartz substrate, removing a portion of the bonded quartz substrate to expose a portion of the interposer film, bonding the quartz substrate to the host substrate, and removing the handle substrate and the interposer film, thereby releasing the quartz substrate.

    摘要翻译: 在本申请中提出了一种用于制造谐振器的方法。 该方法包括提供处理衬底,提供主体衬底,提供包括与第二表面相对的第一表面的石英衬底,将中介层膜施加到石英衬底的第一表面,将石英衬底接合到处理衬底,其中插入膜 设置在石英基板和手柄基板之间,使石英基板的第二表面变薄,去除一部分键合的石英基板以暴露中间层膜的一部分,将石英基板接合到主基板,并且移除手柄 基板和内插膜,从而释放石英基板。

    Quartz-based MEMS resonators and methods of fabricating same
    5.
    发明授权
    Quartz-based MEMS resonators and methods of fabricating same 有权
    基于石英的MEMS谐振器及其制造方法

    公开(公告)号:US08765615B1

    公开(公告)日:2014-07-01

    申请号:US12816292

    申请日:2010-06-15

    摘要: A quart resonator for use in lower frequency applications (typically lower than the higher end of the UHF spectrum) where relatively thick quartz members, having a thickness greater than ten microns, are called for. A method for fabricating same resonator includes providing a first quart substrate; thinning the first quartz substrate to a desired thickness; forming a metallic etch stop on a portion of a first major surface of the first quartz substrate; adhesively attaching the first major surface of the first quartz substrate with the metallic etch stop formed thereon to a second quartz substrate using a temporary adhesive; etching a via though the first quartz substrate to the etch stop; forming a metal electrode on a second major surface of the first quartz substrate, the metal electrode penetrating the via in the first quartz substrate to make ohmic contact with the metallic etch stop; bonding the metal electrode formed on the second major surface of the first quartz substrate to a pad formed on a substrate bearing oscillator drive circuitry to form a bond there between; and dissolving the temporary adhesive to thereby release the second quartz substrate from the substrate bearing oscillator drive circuitry and a portion of the first quartz substrate bonded thereto via the bond formed between the metal electrode formed on the second major surface of the first quartz substrate to and the pad formed on the substrate bearing oscillator drive circuitry.

    摘要翻译: 用于低频应用(通常低于UHF频谱的较高端)的夸特谐振器,其中厚度大于10微米的相对较厚的石英构件被要求。 一种制造相同谐振器的方法包括提供第一夸脱基片; 将第一石英基板变薄至所需厚度; 在所述第一石英衬底的第一主表面的一部分上形成金属蚀刻停止件; 使用临时粘合剂将第一石英基板的第一主表面与其上形成的金属蚀刻停止粘合到第二石英基板上; 将通过第一石英衬底的通孔蚀刻到蚀刻停止部; 在所述第一石英衬底的第二主表面上形成金属电极,所述金属电极穿过所述第一石英衬底中的通孔以与所述金属蚀刻停止件欧姆接触; 将形成在第一石英衬底的第二主表面上的金属电极接合到形成在承载振荡器驱动电路的衬底上的焊盘,以在其之间形成结合; 并且将临时粘合剂溶解,从而从基板轴承振荡器驱动电路和第一石英基板的一部分经由形成在第一石英基板的第二主表面上的金属电极之间的键与第一石英基板接合的部分而释放第二石英基板 衬垫形成在承载振荡器驱动电路的衬底上。

    Large area integration of quartz resonators with electronics
    6.
    发明申请
    Large area integration of quartz resonators with electronics 有权
    石英谐振器与电子部件的大面积集成

    公开(公告)号:US20080034575A1

    公开(公告)日:2008-02-14

    申请号:US11502336

    申请日:2006-08-09

    IPC分类号: H04R31/00

    摘要: Methods for integrating quartz-based resonators with electronics on a large area wafer through direct pick-and-place and flip-chip bonding or wafer-to-wafer boding using handle wafers are described. The resulting combination of quartz-based resonators and large area electronics wafer solves the problem of the quartz-electronics substrate diameter mismatch and enables the integration of arrays of quartz devices of different frequencies with the same electronics.

    摘要翻译: 描述了通过直接拾取和倒装芯片接合或使用处理晶片的晶片到晶片的布局将石英基谐振器与大面积晶片上的电子器件集成的方法。 所得到的石英基谐振器和大面积电子晶片的组合解决了石英电子衬底直径不匹配的问题,并且能够将具有不同频率的石英器件的阵列与相同的电子器件集成。

    Single crystal, dual wafer, tunneling sensor or switch with silicon on insulator substrate and a method of making same

    公开(公告)号:US06982185B2

    公开(公告)日:2006-01-03

    申请号:US10358471

    申请日:2003-02-04

    IPC分类号: H01L21/00

    摘要: A method of making a micro electro-mechanical switch or tunneling sensor. A cantilevered beam structure and a mating structure are defined on an etch stop layer on a first substrate or wafer; and at least one contact structure and a mating structure are defined on a second substrate or wafer, the mating structure on the second substrate or wafer being of a complementary shape to the mating structure on the first substrate or wafer. A bonding layer, preferably a eutectic bonding layer, is provided on at least one of the mating structures. The mating structure of the first substrate is moved into a confronting relationship with the mating structure of the second substrate or wafer. Pressure is applied between the two substrates so as to cause a bond to occur between the two mating structures at the bonding or eutectic layer. Then the first substrate or wafer and the etch stop layer are removed to free the cantilevered beam structure for movement relative to the second substrate or wafer.

    Low frequency quartz based MEMS resonators and method of fabricating the same
    8.
    发明授权
    Low frequency quartz based MEMS resonators and method of fabricating the same 有权
    低频石英MEMS谐振器及其制造方法

    公开(公告)号:US07851971B2

    公开(公告)日:2010-12-14

    申请号:US12577420

    申请日:2009-10-12

    IPC分类号: H01L41/08

    摘要: A method for fabricating a low frequency quartz resonator includes metalizing a top-side of a quartz wafer with a metal etch stop, depositing a first metal layer over the metal etch stop, patterning the first metal layer to form a top electrode, bonding the quartz wafer to a silicon handle, thinning the quartz wafer to a desired thickness, depositing on a bottom-side of the quartz wafer a hard etch mask, etching the quartz wafer to form a quartz area for the resonator and to form a via through the quartz wafer, removing the hard etch mask without removing the metal etch stop, forming on the bottom side of the quartz wafer a bottom electrode for the low frequency quartz resonator, depositing metal for a substrate bond pad onto a host substrate wafer, bonding the quartz resonator to the substrate bond pad, and removing the silicon handle.

    摘要翻译: 一种用于制造低频石英谐振器的方法包括用金属蚀刻停止器将石英晶片的顶侧金属化,在金属蚀刻停止器上沉积第一金属层,图案化第一金属层以形成顶部电极,将石英 将晶片细化到硅手柄,将石英晶片细化到所需厚度,在石英晶片的底侧上沉积硬蚀刻掩模,蚀刻石英晶片以形成用于谐振器的石英区域,并通过石英形成通孔 晶片,去除硬蚀刻掩模而不去除金属蚀刻停止,在石英晶片的底侧上形成用于低频石英谐振器的底部电极,将用于衬底接合焊盘的金属沉积到主衬底晶片上,将石英谐振器 到基板接合焊盘,并且移除硅手柄。

    Quartz-based nanoresonator
    9.
    发明授权
    Quartz-based nanoresonator 有权
    石英基纳米谐振器

    公开(公告)号:US07750535B2

    公开(公告)日:2010-07-06

    申请号:US11800294

    申请日:2007-05-04

    IPC分类号: H01L41/08 H03H9/215

    摘要: A method for fabricating a quartz nanoresonator which can be integrated on a substrate, along with other electronics is disclosed. In this method a quartz substrate is bonded to a base substrate. The quartz substrate is metallized so that a bias voltage is applied to the resonator, thereby causing the quartz substrate to resonate at resonant frequency greater than 100 MHz. The quartz substrate can then be used to drive other electrical elements with a frequency equal to its resonant frequency. The quartz substrate also contains tuning pads to adjust the resonant frequency of the resonator. Additionally, a method for accurately thinning a quartz substrate of the resonator is provided. The method allows the thickness of the quartz substrate to be monitored while the quartz substrate is simultaneously thinned.

    摘要翻译: 公开了一种用于制造可集成在基底上的石英纳米谐振器的方法以及其它电子器件。 在该方法中,将石英基板接合到基底基板。 石英衬底被金属化,使得偏置电压被施加到谐振器,从而使得石英衬底在大于100MHz的谐振频率下谐振。 石英衬底然后可用于以等于其谐振频率的频率驱动其它电气元件。 石英衬底还包含调谐垫以调节谐振器的谐振频率。 此外,提供了一种用于精确稀薄谐振器的石英衬底的方法。 该方法允许在石英衬底同时变薄的同时监测石英衬底的厚度。

    Method for fabricating a resonator
    10.
    发明授权
    Method for fabricating a resonator 有权
    谐振器的制造方法

    公开(公告)号:US07237315B2

    公开(公告)日:2007-07-03

    申请号:US10426931

    申请日:2003-04-30

    IPC分类号: H04R31/00

    摘要: A method for fabricating a quartz nanoresonator which can be integrated on a substrate, along with other electronics is disclosed. In this method a quartz substrate is bonded to a base substrate. The quartz substrate is metallized so that a bias voltage is applied to the resonator, thereby causing the quartz substrate to resonate at resonant frequency greater than 100 MHz. The quartz substrate can then be used to drive other electrical elements with a frequency equal to its resonant frequency. The quartz substrate also contains tuning pads to adjust the resonant frequency of the resonator. Additionally, a method for accurately thinning a quartz substrate of the resonator is provided. The method allows the thickness of the quartz substrate to be monitored while the quartz substrate is simultaneously thinned.

    摘要翻译: 公开了一种用于制造可集成在基底上的石英纳米谐振器的方法以及其它电子器件。 在该方法中,将石英基板接合到基底基板。 石英衬底被金属化,使得偏置电压被施加到谐振器,从而使得石英衬底在大于100MHz的谐振频率下谐振。 石英衬底然后可用于以等于其谐振频率的频率驱动其它电气元件。 石英衬底还包含调谐垫以调节谐振器的谐振频率。 此外,提供了一种用于精确稀薄谐振器的石英衬底的方法。 该方法允许在石英衬底同时变薄的同时监测石英衬底的厚度。