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    GaN-based devices using thick (Ga, Al, In)N base layers
    1.
    发明授权
    GaN-based devices using thick (Ga, Al, In)N base layers 有权
    使用厚（Ga，Al，In）N基层的GaN基器件

    公开(公告)号：US06533874B1

    公开(公告)日：2003-03-18

    申请号：US09656595

    申请日：2000-09-07

    申请人： Robert P. Vaudo ,  Joan M. Redwing ,  Michael A. Tischler ,  Duncan W. Brown ,  Jeffrey S. Flynn

    发明人： Robert P. Vaudo ,  Joan M. Redwing ,  Michael A. Tischler ,  Duncan W. Brown ,  Jeffrey S. Flynn

    IPC分类号： H01L2906

    CPC分类号： B82Y15/00 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02439 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0079

    摘要： A method of forming a (gallium, aluminum, indium) nitride base layer on a substrate for subsequent fabrication, e.g., by MOCVD or MBE, of a microelectronic device structure thereon. Vapor-phase (Ga, Al, In) chloride is reacted with a vapor-phase nitrogenous compound in the presence of the substrate, to form (Ga, Al, In) nitride. The (Ga, Al, In) nitride base layer is grown on the substrate by HVPE, to yield a microelectronic device base comprising a substrate with the (Ga, Al, In) nitride base layer thereon. The product of such HVPE process comprises a device quality, single crystal crack-free base layer of (Ga, Al, In) N on the substrate, in which the thickness of the base layer may, for example, be on the order of 2 microns and greater and the defect density of the base layer may, for example, be on the order of 1E8 cm−2 or lower. Microelectronic devices thereby may be formed on the base layer, over a substrate of a foreign (poor lattice match) material, such as sapphire. Devices which may be fabricated utilizing the HVPE base layer of the invention include light emitting diodes, detectors, transistors, and semiconductor lasers.

    摘要翻译： 在衬底上形成（镓，铝，铟）氮化物基底层的方法，用于例如通过MOCVD或MBE制造其上的微电子器件结构。 在衬底存在下，使气相（Ga，Al，In）与气相含氮化合物反应，形成（Ga，Al，In）氮化物。 （Ga，Al，In）氮化物基层通过HVPE在衬底上生长，得到包含其上具有（Ga，Al，In）氮化物基底层的衬底的微电子器件基底。 这种HVPE工艺的产物包括在衬底上的（Ga，Al，In）N的器件质量，单晶无裂纹基底层，其中基底层的厚度可以例如为2 微米和更大，并且基底层的缺陷密度可以例如为1E8cm-2或更低的数量级。 因此，微电子器件可以形成在基底层上，在诸如蓝宝石的外来（差的晶格匹配）材料的衬底上。 可以使用本发明的HVPE基层制造的器件包括发光二极管，检测器，晶体管和半导体激光器。

    Vicinal gallium nitride substrate for high quality homoepitaxy
    9.
    发明授权
    Vicinal gallium nitride substrate for high quality homoepitaxy 有权
    用于高质量同质外延的最终氮化镓衬底

    公开(公告)号：US08043731B2

    公开(公告)日：2011-10-25

    申请号：US12713514

    申请日：2010-02-26

    申请人： Xueping Xu ,  Robert P. Vaudo ,  Jeffrey S. Flynn ,  George R. Brandes

    发明人： Xueping Xu ,  Robert P. Vaudo ,  Jeffrey S. Flynn ,  George R. Brandes

    IPC分类号： B32B18/00 ,  B32B11/08

    CPC分类号： C30B29/403 ,  C30B25/18 ,  C30B29/406 ,  H01L29/045 ,  H01L29/2003 ,  Y10T83/0524 ,  Y10T428/31

    摘要： A III-V nitride, e.g., GaN, substrate including a (0001) surface offcut from the direction predominantly toward a direction selected from the group consisting of and directions, at an offcut angle in a range that is from about 0.2 to about 10 degrees, wherein the surface has a RMS roughness measured by 50×50 μm2 AFM scan that is less than 1 nm, and a dislocation density that is less than 3 E6 cm−2. The substrate may be formed by offcut slicing of a corresponding boule or wafer blank, by offcut lapping or growth of the substrate body on a corresponding vicinal heteroepitaxial substrate, e.g., of offcut sapphire. Both upper and lower surfaces may be offcut. The substrate is usefully employed for homoepitaxial deposition in the fabrication of III-V nitride-based microelectronic and opto-electronic devices.

    摘要翻译： III-V族氮化物，例如GaN，衬底，其包括从<0001>方向切除的（0001）表面主要朝向选自<10-10>和<11-20>方向的方向切割 在约0.2至约10度的范围内的角度，其中表面具有通过50×50μm2 AFM扫描测量的RMS粗糙度小于1nm，位错密度小于3E6cm-2。 可以通过在对应的邻位异质外延基底（例如切断蓝宝石）上的基底主体的切削研磨或生长来对对应的原子块或晶片坯料进行切割切片来形成基底。 上表面和下表面都可以被切断。 在制造III-V族氮化物微电子和光电子器件时，该衬底有效地用于同质外延沉积。