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    Utilization of iron salts to stabilize and/or disinfect biosolids
    1.
    发明授权
    Utilization of iron salts to stabilize and/or disinfect biosolids 有权
    利用铁盐来稳定和/或消毒生物固体

    公开(公告)号：US09199885B2

    公开(公告)日：2015-12-01

    申请号：US14215952

    申请日：2014-03-17

    申请人： Robert S. Reimers ,  Andrew J. Englande, Jr. ,  Norman K. Murray ,  Yue Xu

    发明人： Robert S. Reimers ,  Andrew J. Englande, Jr. ,  Norman K. Murray ,  Yue Xu

    IPC分类号： C05F7/00 ,  C02F11/14 ,  C05G3/00 ,  C05D9/02

    CPC分类号： C05G3/00 ,  C02F11/004 ,  C02F11/06 ,  C02F11/14 ,  C02F2101/305 ,  C02F2303/02 ,  C02F2303/04 ,  C02F2305/00 ,  C02F2305/02 ,  C05D9/02 ,  C05F7/00 ,  Y02A40/213

    摘要： In order to render sewage sludge suitable for beneficial purposes, it must be disinfected and stabilized. EDC deactivation is rapidly becoming a desirable result of any sludge or biosolids treatment process. Disclosed herein is a process of treating sewage sludge so as to stabilize the sludge that involves the presence of an iron-containing compound during dewatering of the sludge. Process embodiments described also achieve biosolid samples that have reduced EDC activity, Other embodiments disclosed involve use of a combination of iron salts ferrate and ferric chloride that are added to wastewater sludge in the dewatering step before heat drying. The biosolids resulting from sludge treated with aniron-containing compound are able to resist putrefaction for more than two to three weeks.

    摘要翻译： 为了使污水污泥适合用于有益目的，必须进行消毒和稳定。 EDC失活正迅速成为任何污泥或生物固体处理工艺的理想结果。 本文公开了一种处理污泥的方法，以便在污泥脱水期间稳定涉及含铁化合物的存在的污泥。 所描述的方法实施方案还实现了具有降低的EDC活性的生物固体样品。所公开的其它实施方案涉及在加热干燥之前在脱水步骤中加入到废水污泥中的铁盐和铁氯化物的组合的使用。 由含铁化合物处理的污泥产生的生物固体能够抵抗腐败超过两至三周。

    Test strip
    2.
    发明授权
    Test strip 有权
    测试条

    公开(公告)号：US09188561B2

    公开(公告)日：2015-11-17

    申请号：US13783376

    申请日：2013-03-03

    申请人： Yue Xu

    发明人： Yue Xu

    IPC分类号： G01N27/00 ,  G01N27/327

    CPC分类号： G01N27/3272

    摘要： The invention includes a base, a working wire, a grounding wire, a first division layer, a second division layer and a cover layer. The base has a reaction area. The working wire is formed with a first measure contact and a first bioreaction contact. The grounding wire is formed with a second measure contact and a second bioreaction contact. The first division layer and second division layer have a first inlet and a second inlet, respectively. The first inlet and the second inlet correspond to the reaction area in position to expose the first and second bioreaction contacts. The guiding trough is formed by the cover layer, the base and the first and second inlets.

    摘要翻译： 本发明包括基座，工作线，接地线，第一分割层，第二分割层和覆盖层。 基地有反应区。 工作线形成有第一测量接触和第一生物反应接触。 接地线形成有第二测量触点和第二生物反应触点。 第一分隔层和第二分隔层分别具有第一入口和第二入口。 第一入口和第二入口对应于位置的反应区域以暴露第一和第二生物反应接触。 引导槽由覆盖层，基座和第一和第二入口形成。

    Method for operating a high density multi-level cell non-volatile flash memory device
    9.
    发明授权
    Method for operating a high density multi-level cell non-volatile flash memory device 失效
    用于操作高密度多电平单元非易失性闪存器件的方法

    公开(公告)号：US08462556B1

    公开(公告)日：2013-06-11

    申请号：US13327586

    申请日：2011-12-15

    申请人： Yue Xu ,  Feng Yan ,  Ling Pu ,  Xiaoli Ji

    发明人： Yue Xu ,  Feng Yan ,  Ling Pu ,  Xiaoli Ji

    IPC分类号： G11C11/40 ,  G11C16/04

    CPC分类号： G11C11/5671 ,  G11C11/5628 ,  G11C16/10 ,  G11C16/3445 ,  G11C16/3459 ,  G11C16/349

    摘要： A localized trapping multi-level memory cell operating method includes the following steps. First, a localized trapping memory cell with the initial threshold voltage of approximately 2.5V is provided. Next, an erasing operation is performed to obtain a negative threshold level having uniform charge distribution along the channel region. Taking into account the over-erasure issue in the erasing operation, a programming operation is performed to precisely adjust the threshold voltage to a predetermined level of −2V to −1V. Then, with this negative voltage as a new initial state, a corresponding programming operation is performed and electrons are locally injected into the storage layer. By controlling the quantity of injected electrons, the MLC storage is achieved.

    摘要翻译： 本地化陷阱多级存储单元操作方法包括以下步骤。 首先，提供具有大约2.5V的初始阈值电压的局部捕获存储单元。 接下来，执行擦除操作以获得沿通道区域具有均匀电荷分布的负阈值电平。 考虑到擦除操作中的过度擦除问题，执行编程操作以将阈值电压精确地调节到-2V至-1V的预定电平。 然后，利用该负电压作为新的初始状态，执行相应的编程操作，并将电子局部地注入存储层。 通过控制注入电子的数量，实现了MLC存储。

    Photosensitive Detector with Composite Dielectric Gate MOSFET Structure and Its Signal Readout Method
    10.
    发明申请
    Photosensitive Detector with Composite Dielectric Gate MOSFET Structure and Its Signal Readout Method 有权
    具有复合介电栅极MOSFET结构的光敏检测器及其信号读出方法

    公开(公告)号：US20110215227A1

    公开(公告)日：2011-09-08

    申请号：US13126079

    申请日：2010-02-10

    申请人： Feng Yan ,  Rong Zhang ,  Yi Shi ,  Lin Pu ,  Yue Xu ,  Fuwei Wu ,  Xiaofeng Bo ,  Haoguang Xia

    发明人： Feng Yan ,  Rong Zhang ,  Yi Shi ,  Lin Pu ,  Yue Xu ,  Fuwei Wu ,  Xiaofeng Bo ,  Haoguang Xia

    IPC分类号： H01L31/112 ,  H03F3/08

    CPC分类号： H01L27/14643 ,  H01L27/14614 ,  H01L31/1136

    摘要： The present invention relates to a photosensitive detector with a composite dielectric gate MOSFET structure and its signal readout method. The MOSFET structure detector is formed on a p-type semiconductor substrate. N-type semiconductor regions locate on the two sides of the top part of the p-type semiconductor substrate to form a source and a drain. An underlying dielectric layer, a photo-electron storage layer, a top dielectric layer, and a control gate are stacked on the substrate in sequence. The top insulating dielectric layer can prevent the photoelectrons stored in the photo-electron storage layer from leaking into the control gate. The source and the drain are floating when photoelectrons are collected and injected into the photoelectron storing layer to be held therein. There is a transparent or semi-transparent window for detecting incident light forming on the substrate or gate surface. This invented detector has excellent scalability, basic compatibility with the flash memory fabricating technology, low leakage current, higher imaging speed than CCD, non-sensitivity to processing defects, larger dynamic range than other structures and higher accuracy of signal readout.

    摘要翻译： 本发明涉及一种具有复合介电栅极MOSFET结构的光敏检测器及其信号读出方法。 MOSFET结构检测器形成在p型半导体衬底上。 N型半导体区域位于p型半导体衬底的顶部的两侧，以形成源极和漏极。 依次将基底电介质层，光电子存储层，顶部电介质层和控制栅极堆叠在基板上。 顶部绝缘介电层可以防止存储在光电子存储层中的光电子泄漏到控制栅极中。 当光电子被收集并注入到要保持在其中的光电子储存层时，源极和漏极是浮置的。 存在用于检测基板或栅极表面上的入射光形成的透明或半透明窗口。 本发明的检测器具有优异的可扩展性，与闪存制造技术的基本兼容性，低漏电流，比CCD更高的成像速度，对处理缺陷的灵敏度，对其他结构的动态范围更大，信号读出精度更高。