摘要:
A micromachined structure having at least one anchor that includes a supporting substrate with a first and a second foot fixedly positioned on the surface of the substrate and each foot has a supporting edge, which edges are positioned in parallel spaced apart relationship, an elongated tether positioned in spaced relation from the surface of the substrate and extending from the micromachined structure parallel to the parallel supporting edges of the first and the second foot, and first and second risers extending along the supporting edges of the first foot and the second foot, respectively, and rising upwardly to the edges of the tether. The first and the second foot, the first and second risers and the tether being formed integrally by surface micromachining.
摘要:
A micromachined capacitor structure having a first anchor (12) attached to the substrate (24), a tether (13) coupled to the anchor (12) and having a portion free to move in a lateral direction over the substrate (24) in response to acceleration. A tie-bar (14) is coupled to the movable portion of the tether (13), and at least one movable capacitor plate (16) is coupled to the tie bar (13). A first fixed capacitor plate (16) is attached to the substrate (24) laterally overlapping and vertically spaced from the at least one movable capacitor plate (16).
摘要:
A differential capacitor structure (10) formed overlying a substrate (12) having a middle layer (24) disposed between a lower layer (18) and an upper layer (28). The lower layer (18) is a static layer that is formed on the substrate (12), the middle layer (24) has a moveable component and is a dynamic layer attached to the substrate (12) using semi-circular tether supports (42), and the upper layer is a static layer that is anchored to the substrate (12). The semi-circular tether supports (42) are formed from a homogeneous material and provide structural stiffness to support the middle layer (24) in space and also provide stress relief.
摘要:
A process for making an inverted silicon-on-insulator semiconductor device having a pedestal structure. After the processing of polysilicon layers, dielectric layers, an epitaxial region and a nitride layer, a second substrate is bonded to the nitride layer and the first substrate is removed. This allows for an epitaxial region which is isolated from the substrate.
摘要:
A method and structure for adding mass with stress isolation to MEMS. The structure has a thickness of silicon material coupled to at least one flexible element. The thickness of silicon material can be configured to move in one or more spatial directions about the flexible element(s) according to a specific embodiment. The apparatus also includes a plurality of recessed regions formed in respective spatial regions of the thickness of silicon material. Additionally, the apparatus includes a glue material within each of the recessed regions and a plug material formed overlying each of the recessed regions.
摘要:
A MEMS device that has a sensitivity to a stimulus in at least one sensing direction includes a substrate, a movable mass with corner portions suspended in proximity to the substrate, at least one suspension structure coupled approximately to the corner portions of the movable mass for performing a mechanical spring function, and at least one anchor for coupling the substrate to the at least one suspension structure. The at least one anchor is positioned approximately on a center line in the at least one sensing direction.
摘要:
A sensor has a support substrate (200), an electrode (110, 510, 710) movable relative to a surface (201) of the support substrate (200) and comprised of a first material, a structure (160, 460, 560, 760) over a portion of the electrode (110, 510, 710) to limit mobility of the electrode (110, 510, 710) and comprised of a second material different from the first material, and bonding pads (170, 470) outside a perimeter of the electrode (110, 510, 710) and comprised of the second material.
摘要:
A method of making a vertical field effect transistor (FET) having a plurality of gates which are isolated from each other. Each gate has a contact thereby enabling a single gate which is turned "on" to cause the vertical FET to conduct a current. This configuration allows for a logical "or" function to be implemented in a vertical FET.
摘要:
An improved MEMS transducer apparatus and method. The apparatus has a movable base structure including an outer surface region and an inner surface region. At least one central anchor structure can be spatially disposed within a vicinity of the inner surface region and at least one peripheral anchor structure can be spatially disposed within a vicinity of the outer surface region. Additionally, the apparatus can have at least one peripheral spring structure. The peripheral spring structure(s) can be coupled to the peripheral anchor structure(s) and at least one portion of the outer surface region. The apparatus can also have at least one central spring structure. The central spring structure(s) can be operably coupled to the central anchor structure(s) and at least one portion of the inner surface region.
摘要:
A sensor (10) is capable of detecting linear acceleration in the three Cartesian directions and the angular acceleration about three Cartesian axes. The sensor (10) has a conductive layer (32) that is free to move or rotate in any direction. A first, second, and third set of conductors are used to sense and quantify the acceleration of the conductive layer (32). The sensor (10) can also be operated as a closed loop system with the addition of a fourth set of conductors.