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公开(公告)号:US20240136327A1
公开(公告)日:2024-04-25
申请号:US18364127
申请日:2023-08-01
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: AENEE JANG , SEUNGDUK BAEK
IPC: H01L25/065 , H01L23/00 , H01L25/00 , H10B80/00
CPC classification number: H01L25/0657 , H01L24/05 , H01L24/06 , H01L24/08 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/50 , H10B80/00 , H01L24/80 , H01L24/92 , H01L24/94 , H01L24/97 , H01L2224/05553 , H01L2224/05554 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/06051 , H01L2224/06132 , H01L2224/06505 , H01L2224/08145 , H01L2224/13147 , H01L2224/16145 , H01L2224/16227 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48106 , H01L2224/48227 , H01L2224/49175 , H01L2224/73204 , H01L2224/73207 , H01L2224/73253 , H01L2224/73265 , H01L2224/80357 , H01L2224/80379 , H01L2224/80896 , H01L2224/9212 , H01L2224/9222 , H01L2224/92247 , H01L2224/94 , H01L2224/97 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/06555 , H01L2924/0554 , H01L2924/0665 , H01L2924/1436
Abstract: A semiconductor package includes a package substrate including a first pad; a first memory device arranged on the package substrate and including first and second semiconductor chips stacked in a vertical direction; and a first chip connecting member electrically connecting the first semiconductor chip to the package substrate. The first semiconductor chip includes a first cell structure; a first peripheral circuit structure; a first bonding pad; and a first input/output pad electrically connected to the first pad of the package substrate through the first chip connection member. The second semiconductor chip includes a second cell structure; and a second bonding pad connected to the first bonding pad. A part of the first peripheral circuit structure protrudes from a sidewall of the second semiconductor chip so as not to overlap the second semiconductor chip.
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公开(公告)号:US20240421125A1
公开(公告)日:2024-12-19
申请号:US18541649
申请日:2023-12-15
Applicant: Samsung Electronics Co., Ltd.
Inventor: SEUNGDUK BAEK
IPC: H01L25/065 , H01L23/00 , H01L23/31 , H01L23/48 , H01L23/538 , H10B80/00
Abstract: A semiconductor package includes an interposer, a first semiconductor chip on the interposer, a connection structure on the interposer, and a second semiconductor chip on the first semiconductor chip and the connection structure. The first semiconductor chip includes a first input/output circuit. The second semiconductor chip includes a second input/output circuit. The connection structure includes a connection substrate, and a connection through-via penetrating the connection substrate and electrically connecting the second semiconductor chip and the interposer. The first input/output circuit and the second input/output circuit are electrically connected to each other.
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3.
公开(公告)号:US20190244878A1
公开(公告)日:2019-08-08
申请号:US16124225
申请日:2018-09-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: YOUNG LYONG KIM , SEUNGDUK BAEK
IPC: H01L23/488 , H01L23/538 , H01L23/00
CPC classification number: H01L23/488 , H01L23/5384 , H01L23/5386 , H01L24/14
Abstract: A semiconductor device includes a semiconductor substrate divided into a pad region and a cell region and having an active surface and an inactive surface opposite to the active surface, a plurality of metal lines on the active surface of the semiconductor substrate, passivation layers on the active surface of the semiconductor substrate, and a plurality of bumps in the cell region. The passivation layers include a first passivation layer covering the plurality of metal lines and having a non-planarized top surface along an arrangement profile of the plurality of metal lines, and a second passivation layer on the non-planarized top surface of the first passivation layer and having a planarized top surface on which the plurality of bumps are disposed.
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4.
公开(公告)号:US20210028092A1
公开(公告)日:2021-01-28
申请号:US17071137
申请日:2020-10-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: YOUNG LYONG KIM , SEUNGDUK BAEK
IPC: H01L23/488 , H01L23/538 , H01L23/00
Abstract: A semiconductor device includes a semiconductor substrate divided into a pad region and a cell region and having an active surface and an inactive surface opposite to the active surface, a plurality of metal lines on the active surface of the semiconductor substrate, passivation layers on the active surface of the semiconductor substrate, and a plurality of bumps in the cell region. The passivation layers include a first passivation layer covering the plurality of metal lines and having a non-planarized top surface along an arrangement profile of the plurality of metal lines, and a second passivation layer on the non-planarized top surface of the first passivation layer and having a planarized top surface on which the plurality of bumps are disposed.
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公开(公告)号:US20150102505A1
公开(公告)日:2015-04-16
申请号:US14326631
申请日:2014-07-09
Applicant: SAMSUNG ELECTRONICS CO., LTD
Inventor: HYUNSOO CHUNG , SEUNGDUK BAEK , IN-YOUNG LEE , TAE-JE CHO
IPC: H01L25/00 , H01L23/48 , H01L21/56 , H01L25/065 , H01L23/00
CPC classification number: H01L25/50 , H01L21/563 , H01L23/295 , H01L23/3128 , H01L23/3135 , H01L23/481 , H01L24/05 , H01L24/06 , H01L24/13 , H01L24/16 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L24/94 , H01L24/97 , H01L25/0657 , H01L2224/0401 , H01L2224/0557 , H01L2224/06181 , H01L2224/131 , H01L2224/16146 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/73104 , H01L2224/73204 , H01L2224/81005 , H01L2224/81815 , H01L2224/83191 , H01L2224/83192 , H01L2224/92125 , H01L2224/94 , H01L2224/97 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06565 , H01L2924/15311 , H01L2924/181 , H01L2224/81 , H01L2924/014 , H01L2224/83 , H01L2924/00
Abstract: A semiconductor package and a method of fabricating the same. The method may include mounting a lower stack including a plurality of lower semiconductor chips on a substrate and mounting an upper stack including a plurality of upper semiconductor chips on the lower stack. According to example embodiments of the inventive concept, the semiconductor package can be easily fabricated.
Abstract translation: 一种半导体封装及其制造方法。 该方法可以包括将包括多个下半导体芯片的下堆叠安装在基板上,并且在下堆叠上安装包括多个上半导体芯片的上堆叠。 根据本发明构思的示例实施例,可以容易地制造半导体封装。
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公开(公告)号:US20240421129A1
公开(公告)日:2024-12-19
申请号:US18403242
申请日:2024-01-03
Applicant: Samsung Electronics Co., Ltd.
Inventor: SEUNGDUK BAEK
IPC: H01L25/065 , H01L23/00 , H01L23/31 , H10B80/00
Abstract: A semiconductor package include a buffer die, a computing die on the buffer die, a plurality of memory dies vertically stacked on each other to form a memory stack, wherein the memory stack is disposed on the computing die, wherein the buffer die, the computing die, and the memory stack are vertically stacked on each other, and wherein the computing die is disposed in a space between the buffer die and the memory stack, and a mold layer covering the computing die and the plurality of memory dies. The buffer die comprises a plurality of outer connection members. The computing die comprises a plurality of computing blocks. Each of the plurality of memory dies comprises a plurality of memory blocks. The plurality of computing blocks are configured to process data received from the plurality of memory blocks and to store the processed results in the plurality of memory blocks.
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公开(公告)号:US20240234373A9
公开(公告)日:2024-07-11
申请号:US18364127
申请日:2023-08-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: AENEE JANG , SEUNGDUK BAEK
IPC: H01L25/065 , H01L23/00 , H01L25/00 , H10B80/00
CPC classification number: H01L25/0657 , H01L24/05 , H01L24/06 , H01L24/08 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/50 , H10B80/00 , H01L24/80 , H01L24/92 , H01L24/94 , H01L24/97 , H01L2224/05553 , H01L2224/05554 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/06051 , H01L2224/06132 , H01L2224/06505 , H01L2224/08145 , H01L2224/13147 , H01L2224/16145 , H01L2224/16227 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48106 , H01L2224/48227 , H01L2224/49175 , H01L2224/73204 , H01L2224/73207 , H01L2224/73253 , H01L2224/73265 , H01L2224/80357 , H01L2224/80379 , H01L2224/80896 , H01L2224/9212 , H01L2224/9222 , H01L2224/92247 , H01L2224/94 , H01L2224/97 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/06555 , H01L2924/0554 , H01L2924/0665 , H01L2924/1436
Abstract: A semiconductor package includes a package substrate including a first pad; a first memory device arranged on the package substrate and including first and second semiconductor chips stacked in a vertical direction; and a first chip connecting member electrically connecting the first semiconductor chip to the package substrate. The first semiconductor chip includes a first cell structure; a first peripheral circuit structure; a first bonding pad; and a first input/output pad electrically connected to the first pad of the package substrate through the first chip connection member. The second semiconductor chip includes a second cell structure; and a second bonding pad connected to the first bonding pad. A part of the first peripheral circuit structure protrudes from a sidewall of the second semiconductor chip so as not to overlap the second semiconductor chip.
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公开(公告)号:US20240096717A1
公开(公告)日:2024-03-21
申请号:US18213386
申请日:2023-06-23
Applicant: Samsung Electronics Co., Ltd.
Inventor: AE-NEE JANG , SEUNGDUK BAEK
IPC: H01L21/66 , H01L23/00 , H01L23/31 , H01L23/498 , H01L25/065
CPC classification number: H01L22/32 , H01L23/3135 , H01L23/49827 , H01L24/08 , H01L24/16 , H01L24/32 , H01L24/73 , H01L25/0652 , H01L2224/08113 , H01L2224/08148 , H01L2224/16227 , H01L2224/32225 , H01L2224/73204 , H01L2924/1431 , H01L2924/1435
Abstract: A semiconductor package includes a first semiconductor chip on a substrate and including a first semiconductor substrate and a first test pattern on a first surface of the first semiconductor substrate, and a second semiconductor chip on the first semiconductor chip and including a second semiconductor substrate and a second test pattern on a second surface of the second semiconductor substrate. The first and second semiconductor chips bonded to allow the first test pattern to face the second test pattern. The first test pattern includes a first in-pad, first connection pads, and a first out-pad. The second test pattern includes a second in-pad bonded to the first in-pad, a second out-pad bonded to the first out-pad, and second connection pads bonded to the first connection pads. The first and second connection pads are connected in series to alternately connect with each other and form a series wiring pattern, so that each first connection pad connects to another first connection pad in one direction along the series wiring pattern and to a second connection pad in an opposite direction along the series wiring pattern.
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公开(公告)号:US20240072003A1
公开(公告)日:2024-02-29
申请号:US18221465
申请日:2023-07-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: HYUEKJAE LEE , MINKI KIM , SEUNGDUK BAEK
IPC: H01L25/065 , H01L23/00 , H01L25/10
CPC classification number: H01L25/0657 , H01L24/08 , H01L24/09 , H01L25/105 , H01L2224/08148 , H01L2224/08238 , H01L2224/0903 , H01L2225/06541 , H01L2924/182
Abstract: A semiconductor device includes a first chip and a second chip stacked on the first chip. The first chip includes a first substrate, a first upper pad on an upper surface of the first substrate, a first upper insulating layer surrounding a lower portion of the first upper pad and a sacrificial layer surrounding an upper portion of the first upper pad. The second chip includes a second substrate, a second upper pad on an upper surface of the second substrate and a second upper insulating layer surrounding the second upper pad, wherein a thickness of the second upper pad is less than a thickness of the first upper pad.
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公开(公告)号:US20220302087A1
公开(公告)日:2022-09-22
申请号:US17509610
申请日:2021-10-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: DONGJOO CHOI , SEUNGDUK BAEK
IPC: H01L25/065 , H01L23/00 , H01L23/538 , H01L23/367
Abstract: A semiconductor package includes second semiconductor chip stacked on the first semiconductor chip, a chip adhesive layer between the first and second semiconductor chips, a quadrangular signal pillar and a quadrangular center dummy pillar between a central portion of the second semiconductor chip and the first semiconductor chip, an elliptical corner dummy pillar between a corner portion of the second semiconductor chip and the first semiconductor chip, a signal bump between the signal pillar and the first semiconductor chip, a center dummy bump between the center dummy pillar and the first semiconductor chip and a corner dummy bump section between the corner dummy pillar and the first semiconductor chip. The signal pillar and the signal bump provide an electrical path between the second semiconductor chip and the first semiconductor chip, the center dummy pillar and the center dummy bump provide one thermal path between the second semiconductor chip and the first semiconductor chip, and the corner dummy pillar and the corner dummy bump provide another thermal path between the second semiconductor chip and the first semiconductor chip.
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