公开(公告)号：US20140085834A1

公开(公告)日：2014-03-27

申请号：US14092054

申请日：2013-11-27

Applicant: SANYO ELECTRIC CO., LTD.

Inventor： Keishi KATO ,  Osamu TABATA ,  Yoshio OKAYAMA ,  Ryosuke USUI

IPC: H05K1/05

CPC classification number: H05K1/053 ,  H01L23/13 ,  H01L23/142 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49113 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/1431 ,  H01L2924/1435 ,  H01L2924/1438 ,  H01L2924/19107 ,  H05K1/0203 ,  H05K1/0215 ,  H05K1/0216 ,  H05K2201/09972 ,  H05K2201/10166 ,  H05K2203/0315 ,  H05K2203/0323 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: In the upper surface of a metallic substrate, a region near the central part of the metallic substrate is surrounded by a rectangle having dotted sides electrically separate the interior and exterior of the rectangle. Each dot of the sides is formed of a pillared insulating resin that penetrates from the upper surface to the lower surface of the metallic substrate. Oxide films are so formed as to fill in the spaces between adjacent cylinders of insulating resins and the surrounding of the cylinders. That is, a separation layer is formed of the pillared insulating resins and the oxide films that fill up the spaces between the pillared insulating resins as well as their vicinities.

Abstract translation: 在金属基板的上表面，靠近金属基板的中心部分的区域由具有虚线的矩形围绕，矩形的内部和外部电气分离。 侧面的每个点由从金属基板的上表面到下表面贯穿的柱状绝缘树脂形成。 氧化膜被形成为填充绝缘树脂的相邻气缸和气缸周围之间的空间。 也就是说，分离层由柱状绝缘树脂和填充柱状绝缘树脂之间的空间及其附近的氧化物膜形成。

公开(公告)号：US20140063767A1

公开(公告)日：2014-03-06

申请号：US14075847

申请日：2013-11-08

Applicant: SANYO ELECTRIC CO., LTD.

Inventor： Kouichi SAITOU ,  Yoshio OKAYAMA ,  Mayumi NAKASATO

IPC: H05K1/11

CPC classification number: H05K1/111 ,  H01L23/13 ,  H01L23/3735 ,  H01L23/4827 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/80 ,  H01L24/85 ,  H01L25/18 ,  H01L2224/0345 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05084 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05647 ,  H01L2224/06181 ,  H01L2224/08168 ,  H01L2224/451 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48647 ,  H01L2224/48747 ,  H01L2224/48847 ,  H01L2224/73265 ,  H01L2224/80447 ,  H01L2224/8083 ,  H01L2224/85447 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/12041 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/351 ,  H05K1/0306 ,  H05K3/0061 ,  H05K2203/049 ,  H01L2224/32225 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A circuit device according to one exemplary embodiment includes a ceramic substrate, a first conductive pattern provided on one face of the ceramic substrate, a second conductive pattern, formed mainly of Cu, which is provided on the other face of the ceramic substrate, and a semiconductor element provided on an island that constitutes the second conductive pattern. An electrode, whose outermost surface is formed mainly of Cu, is provided in the semiconductor element, and the interface between the island and the electrode is directly fixed by solid-phase bonding.

Abstract translation: 根据一个示例性实施例的电路装置包括陶瓷基板，设置在陶瓷基板的一个面上的第一导电图案，主要由Cu形成的第二导电图案，其设置在陶瓷基板的另一面上， 半导体元件设置在构成第二导电图案的岛上。 在半导体元件中设置有最外表面主要由Cu形成的电极，通过固相键直接固定岛和电极之间的界面。

公开(公告)号：US20130052796A1

公开(公告)日：2013-02-28

申请号：US13662017

申请日：2012-10-26

Applicant: SANYO ELECTRIC CO., LTD

Inventor： Koichi SAITO ,  Yoshio OKAYAMA ,  Yasuyuki YANASE

IPC: H01L21/30

CPC classification number: H01L21/561 ,  H01L21/4832 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49861 ,  H01L23/49894 ,  H01L24/02 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0231 ,  H01L2224/02313 ,  H01L2224/02381 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/0401 ,  H01L2224/1132 ,  H01L2224/11849 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00

Abstract: A semiconductor substrate and a copper sheet stacked with an insulating resin layer are bonded together at a temperature of 130° C. or below (first temperature) so that an element electrode provided on the semiconductor substrate connects to the copper sheet before a thinning process. Then the semiconductor substrate and the copper sheet, on which the insulating resin layer has been stacked, are press-bonded at a high temperature of 170° C. or above (second temperature) with the copper sheet thinned to thickness of a wiring layer. Then the wiring layer (rewiring) is formed by patterning the thinned copper sheet.

Abstract translation: 在130℃以下（第一温度）的温度下将半导体衬底和层叠有绝缘树脂层的铜片接合在一起，使得设置在半导体衬底上的元件电极在变薄处理之前与铜片连接。 然后，将其上层叠有绝缘树脂层的半导体衬底和铜片在170℃或更高的温度（第二温度）下被压接，铜板变薄到布线层的厚度。 然后通过对薄铜板进行图案化来形成布线层（重新布线）。