公开(公告)号：US10818908B2

公开(公告)日：2020-10-27

申请号：US16025069

申请日：2018-07-02

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Mikio Yukawa

IPC: H01M4/02 ,  H01M4/04 ,  H01M4/64 ,  H01M4/13 ,  H01M4/136 ,  H01M4/139 ,  H01M4/1397 ,  H01M10/0525 ,  H01M4/62 ,  H01M4/36 ,  H01M4/58

Abstract: To provide a method for forming a storage battery electrode including an active material layer with high density in which the proportion of conductive additive is low and the proportion of the active material is high. To provide a storage battery having a higher capacity per unit volume of an electrode with the use of a storage battery electrode formed by the formation method. A method for forming a storage battery electrode includes the steps of forming a mixture including an active material, graphene oxide, and a binder; providing a mixture over a current collector; and immersing the mixture provided over the current collector in a polar solvent containing a reducer, so that the graphene oxide is reduced.

公开(公告)号：US09490472B2

公开(公告)日：2016-11-08

申请号：US14220310

申请日：2014-03-20

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kenryo Nanba ,  Mikio Yukawa

IPC: H01M4/04 ,  B05D5/12 ,  H01M4/139 ,  H01M4/62

CPC classification number: H01M4/139 ,  B32B3/30 ,  B32B5/022 ,  B32B15/08 ,  B32B15/12 ,  B32B15/14 ,  B32B21/06 ,  B32B27/00 ,  B32B37/10 ,  B32B37/144 ,  B32B37/24 ,  B32B2037/243 ,  B32B2255/06 ,  B32B2255/20 ,  B32B2305/02 ,  B32B2305/20 ,  B32B2307/202 ,  B32B2307/206 ,  B32B2317/12 ,  B32B2457/10 ,  H01M4/0404 ,  H01M4/0435 ,  H01M4/0471 ,  H01M4/049 ,  H01M4/625 ,  H01M10/0525 ,  H01M2220/30 ,  Y02E60/122 ,  Y02P70/54

Abstract: To provide a storage battery electrode including an active material layer with high density that contains a smaller percentage of conductive additive. To provide a storage battery having a higher capacity per unit volume of an electrode with the use of the electrode for a storage battery. A slurry that contains an active material and graphene oxide is applied to a current collector and dried to form an active material layer over the current collector, the active material layer over the current collector is rolled up together with a spacer, and a rolled electrode which includes the spacer are immersed in a reducing solution so that graphene oxide is reduced.

Abstract translation: 提供一种包含含有较小百分比的导电添加剂的高密度活性物质层的蓄电池电极。 为了提供一种具有使用电池用蓄电池的每单位体积电极的容量的蓄电池。 将含有活性物质和石墨烯氧化物的浆液施加到集电体上并干燥，在集电体上形成活性物质层，集电体上方的活性物质层与间隔物一起卷起，轧制电极 包括将间隔物浸入还原溶液中以使氧化石墨烯被还原。

公开(公告)号：US09478807B2

公开(公告)日：2016-10-25

申请号：US14970733

申请日：2015-12-16

Applicant: Semiconductor Energy Laboratory Co., LTD.

Inventor： Mikio Yukawa

IPC: H01M4/02 ,  H01M4/62 ,  H01M4/04 ,  H01M4/64 ,  H01M4/13 ,  H01M4/139 ,  H01M10/0525 ,  H01M4/36 ,  H01M4/136 ,  H01M4/1397 ,  H01M4/58

CPC classification number: H01M4/0404 ,  H01M4/0416 ,  H01M4/043 ,  H01M4/0435 ,  H01M4/0471 ,  H01M4/049 ,  H01M4/13 ,  H01M4/136 ,  H01M4/139 ,  H01M4/1397 ,  H01M4/366 ,  H01M4/5805 ,  H01M4/5825 ,  H01M4/62 ,  H01M4/625 ,  H01M4/64 ,  H01M10/0525 ,  H01M2220/30 ,  Y02E60/122 ,  Y02P70/54

Abstract: To provide a method for forming a storage battery electrode including an active material layer with high density in which the proportion of conductive additive is low and the proportion of the active material is high. To provide a storage battery having a higher capacity per unit volume of an electrode with the use of a storage battery electrode formed by the formation method. A method for forming a storage battery electrode includes the steps of forming a mixture including an active material, graphene oxide, and a binder; providing a mixture over a current collector; and immersing the mixture provided over the current collector in a polar solvent containing a reducer, so that the graphene oxide is reduced.

公开(公告)号：US09225003B2

公开(公告)日：2015-12-29

申请号：US13913650

申请日：2013-06-10

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Mikio Yukawa

IPC: H01M4/00 ,  H01M4/04 ,  H01M4/64 ,  H01M4/13 ,  H01M4/139 ,  H01M10/0525 ,  H01M4/136 ,  H01M4/1397 ,  H01M4/58 ,  H01M4/62

CPC classification number: H01M4/0404 ,  H01M4/0416 ,  H01M4/043 ,  H01M4/0435 ,  H01M4/0471 ,  H01M4/049 ,  H01M4/13 ,  H01M4/136 ,  H01M4/139 ,  H01M4/1397 ,  H01M4/366 ,  H01M4/5805 ,  H01M4/5825 ,  H01M4/62 ,  H01M4/625 ,  H01M4/64 ,  H01M10/0525 ,  H01M2220/30 ,  Y02E60/122 ,  Y02P70/54

Abstract: To provide a method for forming a storage battery electrode including an active material layer with high density in which the proportion of conductive additive is low and the proportion of the active material is high. To provide a storage battery having a higher capacity per unit volume of an electrode with the use of a storage battery electrode formed by the formation method. A method for forming a storage battery electrode includes the steps of forming a mixture including an active material, graphene oxide, and a binder; providing a mixture over a current collector; and immersing the mixture provided over the current collector in a polar solvent containing a reducer, so that the graphene oxide is reduced.

Abstract translation: 提供一种形成具有导电性添加剂的比例低，活性物质的比例高的高密度的活性物质层的蓄电池电极的制造方法。 通过使用通过形成方法形成的蓄电池电极来提供具有每单位体积的电极的更高容量的蓄电池。 形成蓄电池电极的方法包括以下步骤：形成包括活性材料，氧化石墨烯和粘合剂的混合物; 在集电器上提供混合物; 并将设置在集电体上的混合物浸渍在含有还原剂的极性溶剂中，使得氧化石墨烯被还原。

公开(公告)号：US11735731B2

公开(公告)日：2023-08-22

申请号：US17983140

申请日：2022-11-08

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hiroatsu Todoriki ,  Yumiko Saito ,  Takahiro Kawakami ,  Kuniharu Nomoto ,  Mikio Yukawa

IPC: H01M4/583 ,  H01G11/22 ,  H01M4/133 ,  H01G11/32 ,  H01M4/04 ,  H01M4/587 ,  H01M4/1393 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/23 ,  C01B32/192 ,  H01G9/042 ,  H01M4/139 ,  H01M4/62 ,  H01M6/16 ,  H01M10/0566 ,  H01G11/36 ,  H01M10/0525

CPC classification number: H01M4/5835 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/192 ,  C01B32/23 ,  H01G9/042 ,  H01G11/22 ,  H01G11/32 ,  H01G11/36 ,  H01M4/0438 ,  H01M4/133 ,  H01M4/139 ,  H01M4/1393 ,  H01M4/587 ,  H01M4/62 ,  H01M6/16 ,  H01M10/0566 ,  H01M10/0525 ,  Y02E60/13

Abstract: The formation method of graphene includes the steps of forming a layer including graphene oxide over a first conductive layer; and supplying a potential at which the reduction reaction of the graphene oxide occurs to the first conductive layer in an electrolyte where the first conductive layer as a working electrode and a second conductive layer with a as a counter electrode are immersed. A manufacturing method of a power storage device including at least a positive electrode, a negative electrode, an electrolyte, and a separator includes a step of forming graphene for an active material layer of one of or both the positive electrode and the negative electrode by the formation method.

公开(公告)号：US10461332B2

公开(公告)日：2019-10-29

申请号：US14507872

申请日：2014-10-07

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hiroatsu Todoriki ,  Yumiko Saito ,  Takahiro Kawakami ,  Kuniharu Nomoto ,  Mikio Yukawa

IPC: H01M4/583 ,  H01M4/133 ,  H01G11/36 ,  H01G11/22 ,  H01G11/32 ,  H01G9/042 ,  H01M4/04 ,  H01M4/1393 ,  H01M4/587 ,  B82Y30/00 ,  B82Y40/00 ,  H01M4/139 ,  H01M4/62 ,  H01M6/16 ,  H01M10/0566 ,  C01B32/23 ,  C01B32/192 ,  H01M10/0525

Abstract: The formation method of graphene includes the steps of forming a layer including graphene oxide over a first conductive layer; and supplying a potential at which the reduction reaction of the graphene oxide occurs to the first conductive layer in an electrolyte where the first conductive layer as a working electrode and a second conductive layer with a as a counter electrode are immersed. A manufacturing method of a power storage device including at least a positive electrode, a negative electrode, an electrolyte, and a separator includes a step of forming graphene for an active material layer of one of or both the positive electrode and the negative electrode by the formation method.

公开(公告)号：US20190067701A1

公开(公告)日：2019-02-28

申请号：US16170140

申请日：2018-10-25

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hiroatsu Todoriki ,  Mikio Yukawa ,  Yumiko Saito ,  Masaki Yamakaji ,  Rika Yatabe ,  Tatsuya Ikenuma

IPC: H01M4/62 ,  H01M10/052 ,  H01M4/58 ,  C01B32/23 ,  H01M4/36 ,  H01M4/136

Abstract: A graphene oxide used as a raw material of a conductive additive for forming an active material layer with high electron conductivity with a small amount of a conductive additive is provided. A positive electrode for a nonaqueous secondary battery using the graphene oxide as a conductive additive is provided. The graphene oxide is used as a raw material of a conductive additive in a positive electrode for a nonaqueous secondary battery and, in the graphene oxide, the atomic ratio of oxygen to carbon is greater than or equal to 0.405.

公开(公告)号：US09685277B2

公开(公告)日：2017-06-20

申请号：US15011857

申请日：2016-02-01

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Satoshi Murakami ,  Kazutaka Kuriki ,  Mikio Yukawa

IPC: H01M4/58 ,  H01G11/24 ,  C23C16/24 ,  H01G11/30 ,  H01M4/04 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/66 ,  H01G11/46 ,  H01M4/48 ,  H01M4/52 ,  H01M10/0525

CPC classification number: H01G11/24 ,  C23C16/24 ,  H01G11/30 ,  H01G11/46 ,  H01M4/0428 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/48 ,  H01M4/52 ,  H01M4/661 ,  H01M10/0525 ,  H01M2220/20 ,  H01M2220/30 ,  Y02E60/122 ,  Y02E60/13 ,  Y02P70/54 ,  Y02T10/7022 ,  Y10T29/417 ,  Y10T29/49115

Abstract: An electrode which can have an improved performance such as higher discharge capacity and in which deterioration due to peeling of an active material layer or the like is difficult to occur are provided. The electrode includes an active material layer including a first protrusion, a second protrusion and a continuous active material film, a metal oxide layer, and a continuous mixed layer. The first protrusion, the second protrusion and the continuous active material film includes silicon. The metal oxide layer includes oxygen and a metal element which is capable of forming silicide by reacting with silicon. The continuous mixed layer includes silicon and the metal element.

公开(公告)号：US10347905B2

公开(公告)日：2019-07-09

申请号：US15343716

申请日：2016-11-04

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kenryo Nanba ,  Mikio Yukawa

IPC: H01M4/04 ,  H01M4/139 ,  H01M4/62 ,  B32B3/30 ,  B32B5/02 ,  B32B15/08 ,  B32B15/12 ,  B32B15/14 ,  B32B21/06 ,  B32B27/00 ,  B32B37/10 ,  B32B37/14 ,  B32B37/24 ,  H01M10/0525

Abstract: To provide a storage battery electrode including an active material layer with high density that contains a smaller percentage of conductive additive. To provide a storage battery having a higher capacity per unit volume of an electrode with the use of the electrode for a storage battery. A slurry that contains an active material and graphene oxide is applied to a current collector and dried to form an active material layer over the current collector, the active material layer over the current collector is rolled up together with a spacer, and a rolled electrode which includes the spacer are immersed in a reducing solution so that graphene oxide is reduced.

公开(公告)号：US10236502B2

公开(公告)日：2019-03-19

申请号：US15625476

申请日：2017-06-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kazutaka Kuriki ,  Mikio Yukawa ,  Yuji Asano

IPC: H01M4/38 ,  H01M12/08 ,  H01M10/0569 ,  H01M4/66 ,  H01M10/0525 ,  H01G11/06 ,  H01G11/28 ,  H01G11/30 ,  H01G11/46 ,  H01G11/50 ,  H01L49/02 ,  H01G11/26 ,  H01M4/04 ,  H01M4/134 ,  H01M4/1395 ,  C30B25/00 ,  C30B29/06 ,  C30B29/62 ,  C30B33/02 ,  H01G11/22 ,  H01G11/68 ,  H01G11/70 ,  H01L21/02 ,  H01M10/0583

Abstract: Provided is a method for manufacturing a power storage device in which a crystalline silicon layer including a whisker-like crystalline silicon region is formed as an active material layer over a current collector by a low-pressure CVD method in which heating is performed using a deposition gas containing silicon. The power storage device includes the current collector, a mixed layer formed over the current collector, and the crystalline silicon layer functioning as the active material layer formed over the mixed layer. The crystalline silicon layer includes a crystalline silicon region and a whisker-like crystalline silicon region including a plurality of protrusions which project over the crystalline silicon region. With the protrusions, the surface area of the crystalline silicon layer functioning as the active material layer can be increased.