公开(公告)号：US08824218B2

公开(公告)日：2014-09-02

申请号：US13552932

申请日：2012-07-19

申请人： Seongwon Kim ,  Yong Liu ,  Bipin Rajendran

发明人： Seongwon Kim ,  Yong Liu ,  Bipin Rajendran

IPC分类号： G11C7/06

CPC分类号： G11C13/004 ,  G11C7/067 ,  G11C11/5678 ,  G11C13/0004

摘要： A compact, low-power, asynchronous, resistor-based memory read circuit includes a memory cell having a plurality of consecutive memory states, each of said states corresponding to a respective output voltage. A sense amplifier reads the state of the memory cell. The sense amplifier includes a voltage divider configured to receive the output voltage of the memory cell and to output a settled voltage an amplifier having a voltage threshold between the settled voltages associated with two of said consecutive memory states, configured to discriminate between said two consecutive memory states.

摘要翻译： 紧凑型低功率异步电阻器存储器读取电路包括具有多个连续存储器状态的存储单元，每个所述状态对应于相应的输出电压。 读出放大器读取存储单元的状态。 感测放大器包括分压器，其被配置为接收存储器单元的输出电压并且输出稳定电压，放大器具有在与所述连续存储器状态中的两个相关联的稳定电压之间的电压阈值，其被配置为区分所述两个连续存储器 状态。

公开(公告)号：US20140063925A1

公开(公告)日：2014-03-06

申请号：US13434739

申请日：2012-03-29

申请人： Daniel J. Friedman ,  Seongwon Kim ,  Yong Liu ,  Bipin Rajendran

发明人： Daniel J. Friedman ,  Seongwon Kim ,  Yong Liu ,  Bipin Rajendran

IPC分类号： G11C13/00

CPC分类号： G11C13/0069 ,  G11C13/0004 ,  G11C2013/0085 ,  G11C2013/0088 ,  G11C2013/0092 ,  G11C2213/79

摘要： Embodiments of the present invention provide a device comprising a plurality of phase change memory cells, a word line, and a plurality of bit lines. Each phase change memory cell is coupled to a corresponding transistor. Each transistor is coupled to the word line. Each bit line is coupled to a phase change memory cell of the device. The device further comprises a programming circuit configured to program at least one phase change memory cell to the SET state by selectively applying a two-stage waveform to the word line and the bit lines of the device. In a first stage, a first predetermined low voltage and a first predetermined high voltage are applied at the word line and the bit lines, respectively. In a second stage, a second predetermined high voltage and a predetermined voltage with decreasing amplitude are applied at the word line and the bit lines, respectively.

摘要翻译： 本发明的实施例提供一种包括多个相变存储单元，字线和多个位线的装置。 每个相变存储单元耦合到相应的晶体管。 每个晶体管耦合到字线。 每个位线耦合到器件的相变存储器单元。 该装置还包括编程电路，其被配置为通过选择性地将两级波形应用于该装置的字线和位线来将至少一个相变存储器单元编程到SET状态。 在第一阶段中，分别在字线和位线处施加第一预定低电压和第一预定高电压。 在第二级中，分别在字线和位线处施加具有降低幅度的第二预定高电压和预定电压。

公开(公告)号：US20140078837A1

公开(公告)日：2014-03-20

申请号：US13552932

申请日：2012-07-19

申请人： SEONGWON KIM ,  Yong Liu ,  Bipin Rajendran

发明人： SEONGWON KIM ,  Yong Liu ,  Bipin Rajendran

IPC分类号： G11C13/00

CPC分类号： G11C13/004 ,  G11C7/067 ,  G11C11/5678 ,  G11C13/0004

摘要： A compact, low-power, asynchronous, resistor-based memory read circuit includes a memory cell having a plurality of consecutive memory states, each of said states corresponding to a respective output voltage. A sense amplifier reads the state of the memory cell. The sense amplifier includes a voltage divider configured to receive the output voltage of the memory cell and to output a settled voltage an amplifier having a voltage threshold between the settled voltages associated with two of said consecutive memory states, configured to discriminate between said two consecutive memory states.

摘要翻译： 紧凑型低功率异步电阻器存储器读取电路包括具有多个连续存储器状态的存储单元，每个所述状态对应于相应的输出电压。 读出放大器读取存储单元的状态。 感测放大器包括分压器，其被配置为接收存储器单元的输出电压并且输出稳定电压，放大器具有在与所述连续存储器状态中的两个相关联的稳定电压之间的电压阈值，其被配置为区分所述两个连续存储器 状态。

公开(公告)号：US08331164B2

公开(公告)日：2012-12-11

申请号：US12960651

申请日：2010-12-06

申请人： Seongwon Kim ,  Yong Liu ,  Bipin Rajendran

发明人： Seongwon Kim ,  Yong Liu ,  Bipin Rajendran

IPC分类号： G11C7/06

CPC分类号： G11C13/004 ,  G11C7/067 ,  G11C11/5678 ,  G11C13/0004

摘要： A compact, low-power, asynchronous, resistor-based memory read circuit includes a memory cell having a plurality of consecutive memory states, each of said states corresponding to a respective output voltage. A sense amplifier reads the state of the memory cell. The sense amplifier includes a voltage divider configured to receive the output voltage of the memory cell and to output a settled voltage an amplifier having a voltage threshold between the settled voltages associated with two of said consecutive memory states, configured to discriminate between said two consecutive memory states.

摘要翻译： 紧凑型低功率异步电阻器存储器读取电路包括具有多个连续存储器状态的存储单元，每个所述状态对应于相应的输出电压。 读出放大器读取存储单元的状态。 感测放大器包括分压器，其被配置为接收存储器单元的输出电压并且输出稳定电压，放大器具有在与所述连续存储器状态中的两个相关联的稳定电压之间的电压阈值，其被配置为区分所述两个连续存储器 状态。

公开(公告)号：US20120140554A1

公开(公告)日：2012-06-07

申请号：US12960651

申请日：2010-12-06

申请人： Seongwon Kim ,  Yong Liu ,  Bipin Rajendran

发明人： Seongwon Kim ,  Yong Liu ,  Bipin Rajendran

IPC分类号： G11C11/00 ,  G11C7/00 ,  G11C7/06

CPC分类号： G11C13/004 ,  G11C7/067 ,  G11C11/5678 ,  G11C13/0004

摘要： A compact, low-power, asynchronous, resistor-based memory read circuit includes a memory cell having a plurality of consecutive memory states, each of said states corresponding to a respective output voltage. A sense amplifier reads the state of the memory cell. The sense amplifier includes a voltage divider configured to receive the output voltage of the memory cell and to output a settled voltage an amplifier having a voltage threshold between the settled voltages associated with two of said consecutive memory states, configured to discriminate between said two consecutive memory states.

摘要翻译： 紧凑型低功率异步电阻器存储器读取电路包括具有多个连续存储器状态的存储单元，每个所述状态对应于相应的输出电压。 读出放大器读取存储单元的状态。 感测放大器包括分压器，其被配置为接收存储器单元的输出电压并且输出稳定电压，放大器具有在与所述连续存储器状态中的两个相关联的稳定电压之间的电压阈值，其被配置为区分所述两个连续存储器 状态。

公开(公告)号：US20120259804A1

公开(公告)日：2012-10-11

申请号：US13083414

申请日：2011-04-08

申请人： Bernard V. Brezzo ,  Leland Chang ,  Steven K. Esser ,  Daniel J. Friedman ,  Yong Liu ,  Dharmendra S. Modha ,  Robert K. Montoye ,  Bipin Rajendran ,  Jae-sun Seo ,  Jose A. Tierno

发明人： Bernard V. Brezzo ,  Leland Chang ,  Steven K. Esser ,  Daniel J. Friedman ,  Yong Liu ,  Dharmendra S. Modha ,  Robert K. Montoye ,  Bipin Rajendran ,  Jae-sun Seo ,  Jose A. Tierno

IPC分类号： G06N3/04 ,  G06N3/08

CPC分类号： G06N3/063 ,  G06N3/04 ,  G06N3/049 ,  G06N3/082

摘要： A reconfigurable neural network circuit is provided. The reconfigurable neural network circuit comprises an electronic synapse array including multiple synapses interconnecting a plurality of digital electronic neurons. Each neuron comprises an integrator that integrates input spikes and generates a signal when the integrated inputs exceed a threshold. The circuit further comprises a control module for reconfiguring the synapse array. The control module comprises a global final state machine that controls timing for operation of the circuit, and a priority encoder that allows spiking neurons to sequentially access the synapse array.

公开(公告)号：US08898097B2

公开(公告)日：2014-11-25

申请号：US13587594

申请日：2012-08-16

申请人： Bernard V. Brezzo ,  Leland Chang ,  Steven K. Esser ,  Daniel J. Friedman ,  Yong Liu ,  Dharmendra S. Modha ,  Robert K. Montoye ,  Bipin Rajendran ,  Jae-sun Seo ,  Jose A. Tierno

发明人： Bernard V. Brezzo ,  Leland Chang ,  Steven K. Esser ,  Daniel J. Friedman ,  Yong Liu ,  Dharmendra S. Modha ,  Robert K. Montoye ,  Bipin Rajendran ,  Jae-sun Seo ,  Jose A. Tierno

IPC分类号： G06N3/063 ,  G06N3/04

CPC分类号： G06N3/063 ,  G06N3/04 ,  G06N3/049 ,  G06N3/082

摘要： A reconfigurable neural network circuit is provided. The reconfigurable neural network circuit comprises an electronic synapse array including multiple synapses interconnecting a plurality of digital electronic neurons. Each neuron comprises an integrator that integrates input spikes and generates a signal when the integrated inputs exceed a threshold. The circuit further comprises a control module for reconfiguring the synapse array. The control module comprises a global final state machine that controls timing for operation of the circuit, and a priority encoder that allows spiking neurons to sequentially access the synapse array.

摘要翻译： 提供可重构神经网络电路。 可重构神经网络电路包括电子突触阵列，其包括互连多个数字电子神经元的多个突触。 每个神经元包括积分器，其对输入尖峰进行积分，并且当集成输入超过阈值时产生信号。 电路还包括用于重新配置突触阵列的控制模块。 控制模块包括控制电路操作的定时的全局最终状态机，以及允许加标神经元依次访问突触阵列的优先编码器。

公开(公告)号：US08856055B2

公开(公告)日：2014-10-07

申请号：US13083414

申请日：2011-04-08

申请人： Bernard V. Brezzo ,  Leland Chang ,  Steven K. Esser ,  Daniel J. Friedman ,  Yong Liu ,  Dharmendra S. Modha ,  Robert K. Montoye ,  Bipin Rajendran ,  Jae-sun Seo ,  Jose A. Tierno

发明人： Bernard V. Brezzo ,  Leland Chang ,  Steven K. Esser ,  Daniel J. Friedman ,  Yong Liu ,  Dharmendra S. Modha ,  Robert K. Montoye ,  Bipin Rajendran ,  Jae-sun Seo ,  Jose A. Tierno

IPC分类号： G06N3/063 ,  G06N3/04

CPC分类号： G06N3/063 ,  G06N3/04 ,  G06N3/049 ,  G06N3/082

摘要： A reconfigurable neural network circuit is provided. The reconfigurable neural network circuit comprises an electronic synapse array including multiple synapses interconnecting a plurality of digital electronic neurons. Each neuron comprises an integrator that integrates input spikes and generates a signal when the integrated inputs exceed a threshold. The circuit further comprises a control module for reconfiguring the synapse array. The control module comprises a global final state machine that controls timing for operation of the circuit, and a priority encoder that allows spiking neurons to sequentially access the synapse array.

公开(公告)号：US20120317062A1

公开(公告)日：2012-12-13

申请号：US13587594

申请日：2012-08-16

申请人： Bernard V. BREZZO ,  Leland Chang ,  Steven K. Esser ,  Daniel J. Friedman ,  Yong Liu ,  Dharmendra S. Modha ,  Robert K. Montoye ,  Bipin Rajendran ,  Jae-sun Seo ,  Jose A. Tierno

发明人： Bernard V. BREZZO ,  Leland Chang ,  Steven K. Esser ,  Daniel J. Friedman ,  Yong Liu ,  Dharmendra S. Modha ,  Robert K. Montoye ,  Bipin Rajendran ,  Jae-sun Seo ,  Jose A. Tierno

IPC分类号： G06N3/08

CPC分类号： G06N3/063 ,  G06N3/04 ,  G06N3/049 ,  G06N3/082

摘要： A reconfigurable neural network circuit is provided. The reconfigurable neural network circuit comprises an electronic synapse array including multiple synapses interconnecting a plurality of digital electronic neurons. Each neuron comprises an integrator that integrates input spikes and generates a signal when the integrated inputs exceed a threshold. The circuit further comprises a control module for reconfiguring the synapse array. The control module comprises a global final state machine that controls timing for operation of the circuit, and a priority encoder that allows spiking neurons to sequentially access the synapse array.

摘要翻译： 提供可重构神经网络电路。 可重构神经网络电路包括电子突触阵列，其包括互连多个数字电子神经元的多个突触。 每个神经元包括积分器，其对输入尖峰进行积分，并且当集成输入超过阈值时产生信号。 电路还包括用于重新配置突触阵列的控制模块。 控制模块包括控制电路操作的定时的全局最终状态机，以及允许加标神经元依次访问突触阵列的优先编码器。

公开(公告)号：US10311424B2

公开(公告)日：2019-06-04

申请号：US13885218

申请日：2010-12-09

申请人： Yong Liu ,  Xiaoxun Zhu ,  Jie Ren

发明人： Yong Liu ,  Xiaoxun Zhu ,  Jie Ren

IPC分类号： G06Q20/32 ,  G07G1/00 ,  G06Q30/06

摘要： An indicia encoding system is disclosed herein that encodes integrated information on products and/or services selected for purchase and payment information for purchasing the selected products and/or services, in accordance with a variety of embodiments involving various methods, devices and systems. In one illustrative embodiment, a method may include entering purchase order information via one or more input/output components. The purchase order may include an indication for one or more products and/or one or more services. The method may also include entering payment information, including information on a method of payment, via one or more input/output components. The method may also include generating a machine-readable indicia that encodes both the purchase order information and the payment information, with the payment information in an encrypted form; and displaying the machine-readable indicia on a screen.