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    Substrate support with gas introduction openings
    1.
    发明授权
    Substrate support with gas introduction openings 有权
    衬底支撑与气体导入孔

    公开(公告)号：US08853098B2

    公开(公告)日：2014-10-07

    申请号：US13401755

    申请日：2012-02-21

    申请人： Sam H. Kim ,  John M. White ,  Soo Young Choi ,  Carl A. Sorensen ,  Robin L. Tiner ,  Beom Soo Park

    发明人： Sam H. Kim ,  John M. White ,  Soo Young Choi ,  Carl A. Sorensen ,  Robin L. Tiner ,  Beom Soo Park

    IPC分类号： H01L21/00 ,  H01L21/44 ,  H01L21/31 ,  H01L21/469 ,  H01L21/687 ,  H01L21/683

    CPC分类号： H01L21/68742 ,  H01L21/6831

    摘要： Embodiments disclosed herein generally relate to an apparatus and a method for placing a substrate substantially flush against a substrate support in a processing chamber. When a large area substrate is placed onto a substrate support, the substrate may not be perfectly flush against the substrate support due to gas pockets that may be present between the substrate and the substrate support. The gas pockets can lead to uneven deposition on the substrate. Therefore, pulling the gas from between the substrate and the support may pull the substrate substantially flush against the support. During deposition, an electrostatic charge can build up and cause the substrate to stick to the substrate support. By introducing a gas between the substrate and the substrate support, the electrostatic forces may be overcome so that the substrate can be separated from the susceptor with less or no plasma support which takes extra time and gas.

    摘要翻译： 本文公开的实施例通常涉及用于将衬底基本上与衬底支撑件齐平地放置在处理室中的装置和方法。 当将大面积基板放置在基板支撑件上时，由于可能存在于基板和基板支撑件之间的气体袋，基板可能不能完全与基板支撑件齐平。 气袋可导致基板上的不均匀沉积。 因此，从衬底和支撑件之间拉动气体可以将衬底基本上与支撑件齐平。 在沉积期间，静电电荷可能积聚并使衬底粘附到衬底支撑件上。 通过在衬底和衬底支撑件之间引入气体，可以克服静电力，使得衬底可以用较少或不需要额外时间和气体的等离子体支架与基座分离。

    SUBSTRATE SUPPORT WITH GAS INTRODUCTION OPENINGS
    2.
    发明申请
    SUBSTRATE SUPPORT WITH GAS INTRODUCTION OPENINGS 审中-公开
    基础支持与气体介绍开幕

    公开(公告)号：US20100184290A1

    公开(公告)日：2010-07-22

    申请号：US12686483

    申请日：2010-01-13

    申请人： Sam H. Kim ,  John M. White ,  Soo Young Choi ,  Carl A. Sorensen ,  Robin L. Tiner ,  Beom Soo Park

    发明人： Sam H. Kim ,  John M. White ,  Soo Young Choi ,  Carl A. Sorensen ,  Robin L. Tiner ,  Beom Soo Park

    IPC分类号： H01L21/28

    CPC分类号： H01L21/68742 ,  H01L21/6831

    摘要： Embodiments disclosed herein generally relate to an apparatus and a method for placing a substrate substantially flush against a substrate support in a processing chamber. When a large area substrate is placed onto a substrate support, the substrate may not be perfectly flush against the substrate support due to gas pockets that may be present between the substrate and the substrate support. The gas pockets can lead to uneven deposition on the substrate. Therefore, pulling the gas from between the substrate and the support may pull the substrate substantially flush against the support. During deposition, an electrostatic charge can build up and cause the substrate to stick to the substrate support. By introducing a gas between the substrate and the substrate support, the electrostatic forces may be overcome so that the substrate can be separated from the susceptor with less or no plasma support which takes extra time and gas.

    摘要翻译： 本文公开的实施例通常涉及用于将衬底基本上与衬底支撑件齐平地放置在处理室中的装置和方法。 当将大面积基板放置在基板支撑件上时，由于可能存在于基板和基板支撑件之间的气体袋，基板可能不能完全与基板支撑件齐平。 气袋可导致基板上的不均匀沉积。 因此，从衬底和支撑件之间拉动气体可以将衬底基本上与支撑件齐平。 在沉积期间，静电电荷可能积聚并使衬底粘附到衬底支撑件上。 通过在衬底和衬底支撑件之间引入气体，可以克服静电力，使得衬底可以用较少或不需要额外时间和气体的等离子体支架与基座分离。

    Substrate Support with Gas Introduction Openings
    3.
    发明申请
    Substrate Support with Gas Introduction Openings 有权
    基板支持与气体介绍开放

    公开(公告)号：US20120149194A1

    公开(公告)日：2012-06-14

    申请号：US13401755

    申请日：2012-02-21

    申请人： SAM H. KIM ,  John M. White ,  Soo Young Choi ,  Carl A. Sorensen ,  Robin L. Tiner ,  Beom Soo Park

    发明人： SAM H. KIM ,  John M. White ,  Soo Young Choi ,  Carl A. Sorensen ,  Robin L. Tiner ,  Beom Soo Park

    IPC分类号： H01L21/28

    CPC分类号： H01L21/68742 ,  H01L21/6831

    摘要： Embodiments disclosed herein generally relate to an apparatus and a method for placing a substrate substantially flush against a substrate support in a processing chamber. When a large area substrate is placed onto a substrate support, the substrate may not be perfectly flush against the substrate support due to gas pockets that may be present between the substrate and the substrate support. The gas pockets can lead to uneven deposition on the substrate. Therefore, pulling the gas from between the substrate and the support may pull the substrate substantially flush against the support. During deposition, an electrostatic charge can build up and cause the substrate to stick to the substrate support. By introducing a gas between the substrate and the substrate support, the electrostatic forces may be overcome so that the substrate can be separated from the susceptor with less or no plasma support which takes extra time and gas.

    摘要翻译： 本文公开的实施例通常涉及用于将衬底基本上与衬底支撑件齐平地放置在处理室中的装置和方法。 当将大面积基板放置在基板支撑件上时，由于可能存在于基板和基板支撑件之间的气体袋，基板可能不能完全与基板支撑件齐平。 气袋可导致基板上的不均匀沉积。 因此，从衬底和支撑件之间拉动气体可以将衬底基本上与支撑件齐平。 在沉积期间，静电电荷可能积聚并使衬底粘附到衬底支撑件上。 通过在衬底和衬底支撑件之间引入气体，可以克服静电力，使得衬底可以用较少或不需要额外时间和气体的等离子体支架与基座分离。

    SOURCE GAS FLOW PATH CONTROL IN PECVD SYSTEM TO CONTROL A BY-PRODUCT FILM DEPOSITION ON INSIDE CHAMBER
    4.
    发明申请
    SOURCE GAS FLOW PATH CONTROL IN PECVD SYSTEM TO CONTROL A BY-PRODUCT FILM DEPOSITION ON INSIDE CHAMBER 有权
    PECVD系统中的源气体流路控制，用于控制室内副产物膜沉积

    公开(公告)号：US20090064934A1

    公开(公告)日：2009-03-12

    申请号：US12205363

    申请日：2008-09-05

    申请人： BEOM SOO PARK ,  Young Jin Choi ,  Robin L. Tiner ,  Sam H. Kim ,  Soo Young Choi ,  John M. White ,  Dong-Kil Yim

    发明人： BEOM SOO PARK ,  Young Jin Choi ,  Robin L. Tiner ,  Sam H. Kim ,  Soo Young Choi ,  John M. White ,  Dong-Kil Yim

    IPC分类号： C23C16/513

    CPC分类号： C23C16/45502 ,  C23C16/4401

    摘要： The present invention generally comprises a method and an apparatus for guiding the flow of processing gases away from chamber walls and slit valve opening. By controlling the flow path of the process gases within a processing chamber, undesirable deposition upon chamber walls and within slit valve openings may be reduced. By reducing deposition in slit valve openings, flaking may be reduced. By reducing deposition on chamber walls, the time between chamber cleaning may be increased. Thus, guiding the flow of processing gases within the processing chamber may increase substrate throughput.

    摘要翻译： 本发明通常包括一种用于将处理气体的流动引导离开室壁和狭缝阀开口的方法和装置。 通过控制处理室内的处理气体的流动路径，可以减少在室壁上和狭缝阀开口内的不期望的沉积。 通过减少狭缝阀开口中的沉积，可能会降低剥落。 通过减少室壁上的沉积，可以增加室清洁之间的时间。 因此，引导处理室内的处理气体的流动可以增加衬底生产量。

    DIFFUSER GRAVITY SUPPORT
    6.
    发明申请
    DIFFUSER GRAVITY SUPPORT 有权
    DIFFUSER GRAVITY支持

    公开(公告)号：US20090007846A1

    公开(公告)日：2009-01-08

    申请号：US12234359

    申请日：2008-09-19

    申请人： ERNST KELLER ,  John M. White ,  Robin L. Tiner ,  Jiri Kucera ,  Soo Young Choi ,  Beom Soo Park ,  Michael Starr

    发明人： ERNST KELLER ,  John M. White ,  Robin L. Tiner ,  Jiri Kucera ,  Soo Young Choi ,  Beom Soo Park ,  Michael Starr

    IPC分类号： C23C16/00

    CPC分类号： H01J37/3244 ,  C23C16/45565

    摘要： An apparatus and method for supporting a substantial center portion of a gas distribution plate is disclosed. At least one support member is capable of engaging and disengaging the diffuser with a mating connection without prohibiting flow of a gas or gases through the diffuser and is designed to provide vertical suspension to a diffuser that is supported at its perimeter, or capable of supporting the diffuser without a perimeter support. In one aspect, the at least one support member is a portion of a gas delivery conduit and in another embodiment is a plurality of support members separated from the gas delivery conduit. The at least one support member is capable of translating vertical lift, or vertical compression to a center area of the diffuser. A method and apparatus for controlling gas flow from the gas delivery conduit to the gas distribution plate is also disclosed.

    摘要翻译： 公开了一种用于支撑气体分布板的大部分中心部分的装置和方法。 至少一个支撑构件能够通过配合连接件接合和分离扩散器，而不阻止气体或气体流过扩散器，并且被设计成向在其周边支撑的扩散器提供垂直悬架，或者能够支撑 扩散器没有周界支撑。 在一个方面，所述至少一个支撑构件是气体输送导管的一部分，并且在另一个实施例中是与气体输送导管分离的多个支撑构件。 至少一个支撑构件能够将垂直升降或垂直压缩平移到扩散器的中心区域。 还公开了一种用于控制从气体输送管道到气体分配板的气流的方法和装置。

    PREVENTION OF FILM DEPOSITION ON PECVD PROCESS CHAMBER WALL
    7.
    发明申请
    PREVENTION OF FILM DEPOSITION ON PECVD PROCESS CHAMBER WALL 有权
    防止膜电沉积在PECVD工艺室壁上

    公开(公告)号：US20080187682A1

    公开(公告)日：2008-08-07

    申请号：US11955575

    申请日：2007-12-13

    申请人： Beom Soo Park ,  Robin L. Tiner ,  Soo Young Choi ,  John M. White

    发明人： Beom Soo Park ,  Robin L. Tiner ,  Soo Young Choi ,  John M. White

    IPC分类号： C23C16/513 ,  C23C16/00

    CPC分类号： C23C16/4401 ,  C23C16/5096 ,  H01J37/32623 ,  H01J37/32697

    摘要： A method and apparatus for processing a substrate are provided. The chamber body comprises a chamber bottom and a sidewall having a slit valve. A substrate support comprising a support body is disposed in the chamber body. A first end of at least one wide RF ground strap is coupled with the support body and a second end of at least one RF ground strap is coupled with the chamber bottom. At least one extension bar is positioned along a peripheral edge of the support body. The method comprises providing a processing chamber having a slit valve and a substrate support, providing RF power to a distribution plate disposed over the substrate support, flowing gas through the distribution plate, plasma processing a substrate disposed on the substrate support, and reducing the generation of plasma adjacent to the slit valve.

    摘要翻译： 提供了一种用于处理衬底的方法和设备。 腔室主体包括腔室底部和具有狭缝阀的侧壁。 包括支撑体的基板支撑件设置在室主体中。 至少一个宽RF接地带的第一端与支撑体耦合，并且至少一个RF接地带的第二端与腔室底部联接。 至少一个延伸杆沿着支撑体的外围边缘定位。 该方法包括提供具有狭缝阀和衬底支撑件的处理室，向布置在衬底支撑件上方的分配板提供RF功率，使气体流过分布板，等离子体处理设置在衬底支架上的衬底，并减少发电 的等离子体。

    Plasma uniformity control by gas diffuser hole design
    10.
    发明授权
    Plasma uniformity control by gas diffuser hole design 有权
    通过气体扩散器孔设计的等离子体均匀性控制

    公开(公告)号：US08083853B2

    公开(公告)日：2011-12-27

    申请号：US10889683

    申请日：2004-07-12

    申请人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

    发明人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

    IPC分类号： C23C16/00 ,  C23C16/455 ,  H01L21/3065

    CPC分类号： H01J37/3244 ,  C23C16/345 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32596 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3325 ,  Y10T29/49885 ,  Y10T29/49996

    摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.

    摘要翻译： 提供了用于在处理室中分配气体的气体扩散板的实施例。 气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。 气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。 延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性 。 从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。 扩散板的弯曲可以通过热处理或真空工艺来实现。 从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。 具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。