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    METHOD AND ELECTRONIC DEVICE FOR DISPLAYING VIRTUAL KEYBOARD
    1.
    发明申请
    METHOD AND ELECTRONIC DEVICE FOR DISPLAYING VIRTUAL KEYBOARD 审中-公开
    用于显示虚拟键盘的方法和电子设备

    公开(公告)号：US20150378599A1

    公开(公告)日：2015-12-31

    申请号：US14750278

    申请日：2015-06-25

    申请人： Samsung Electronics Co., Ltd.

    发明人： Gun-Uk Lee ,  Hye-Jin Kim ,  Byoung-Doo Park ,  Ra-Yeon Ahn ,  Sang-Wook Kwon

    IPC分类号： G06F3/0488 ,  G06F3/041

    CPC分类号： G06F3/04886 ,  G06F3/018 ,  G06F3/04883

    摘要： The present disclosure relates to a sensor network, Machine Type Communication (MTC), Machine-to-Machine (M2M) communication, and technology for Internet of Things (IoT). The present disclosure may be applied to intelligent services based on the above technologies, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. A method and an electronic device for displaying a virtual keyboard are provided. The method includes detecting a touch on a virtual keyboard, determining whether the detected touch moves from a first area within the virtual keyboard to another area, and changing and displaying, when the touch moves from the first area to the other area, the virtual keyboard according to a movement direction of the touch.

    摘要翻译： 本公开涉及传感器网络，机器类型通信（MTC），机器对机器（M2M）通信和物联网技术（IoT）。 本发明可以应用于智能家居，智能建筑，智能城市，智能汽车，连接车，医疗保健，数字教育，智能零售，安全和安全服务等上述技术的智能化服务。 提供一种用于显示虚拟键盘的方法和电子设备。 该方法包括检测虚拟键盘上的触摸，确定检测到的触摸是否从虚拟键盘内的第一区域移动到另一区域，以及当触摸从第一区域移动到另一区域时，改变和显示虚拟键盘 根据触摸的移动方向。

    Electronic device and operation method thereof
    3.
    发明授权
    Electronic device and operation method thereof 有权

    公开(公告)号：US10114418B2

    公开(公告)日：2018-10-30

    申请号：US15710051

    申请日：2017-09-20

    申请人： Samsung Electronics Co., Ltd.

    发明人： Jungwoo Shin ,  Joonhwan Kim ,  Jeong-Won Ko ,  Munhwi Kim ,  Hye-Jin Kim ,  Kyung-Wook Ro ,  Myoung-Soo Park

    IPC分类号： G06F1/16 ,  G06F3/0481 ,  G09G5/00 ,  H04M1/02

    摘要： A method and a device for providing a user interface (UI) in an electronic device are provided. The electronic device includes a display that displays a UI corresponding to an operation state of the display, and a processor electrically connected with the display, wherein the processor is configured to determine the operation state of the display, display a first UI based on a first object according to a basic arrangement when the operation state is a first state, display a second UI based on the first object and a second object associated with the first object according to an expanded arrangement when the operation state is a second state, and display the second object in an area adjacent to the first object, corresponding to the expanded arrangement.

    Semiconductor memory device having resistive memory cells and method of testing the same
    4.
    发明授权
    Semiconductor memory device having resistive memory cells and method of testing the same 有权
    具有电阻式存储单元的半导体存储器件及其测试方法

    公开(公告)号：US09147500B2

    公开(公告)日：2015-09-29

    申请号：US13945007

    申请日：2013-07-18

    申请人： Samsung Electronics Co., Ltd.

    发明人： Hye-Jin Kim ,  Hyung-Rok Oh ,  Dong-Seok Kang ,  Dong-Hyun Sohn ,  Sang-Beom Kang ,  Chul-Woo Park ,  Yun-Sang Lee

    IPC分类号： G11C11/00 ,  G11C29/10 ,  G11C11/16 ,  G11C29/32 ,  G11C29/34 ,  G11C29/26

    CPC分类号： G11C29/10 ,  G11C11/16 ,  G11C11/161 ,  G11C11/165 ,  G11C11/1673 ,  G11C11/1675 ,  G11C29/32 ,  G11C29/34 ,  G11C2029/2602

    摘要： A semiconductor memory device includes a memory cell array, a mode register set and a test circuit. The memory cell array includes a plurality of wordlines, a plurality of bitlines, and a plurality of spin-transfer torque magneto-resistive random access memory (STT-MRAM) cells, and each STT-MRAM cell disposed in a cross area of each wordline and bitline, and the STT-MRAM cell includes a magnetic tunnel junction (MTJ) element and a cell transistor. A gate of the cell transistor is coupled to a wordline, a first electrode of the cell transistor is coupled to a bitline via the MTJ element, and a second electrode of the cell transistor is coupled to a source line. The mode register set is configured to set a test mode, and the test circuit is configured to perform a test operation by using the mode register set.

    摘要翻译： 半导体存储器件包括存储单元阵列，模式寄存器组和测试电路。 存储单元阵列包括多个字线，多个位线和多个自旋转移转矩磁阻随机存取存储器（STT-MRAM）单元，每个STT-MRAM单元设置在每个字线的交叉区域 和位线，并且STT-MRAM单元包括磁隧道结（MTJ）元件和单元晶体管。 单元晶体管的栅极耦合到字线，单元晶体管的第一电极通过MTJ元件耦合到位线，并且单元晶体管的第二电极耦合到源极线。 模式寄存器组被配置为设置测试模式，并且测试电路被配置为通过使用模式寄存器集执行测试操作。