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公开(公告)号：US10706920B2
公开(公告)日：2020-07-07
申请号：US16100295
申请日：2018-08-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Chea Ouk Lim , Tae Hui Na , Jung Sunwoo , Yong Jun Lee
Abstract: A memory device includes: a memory cell array including a plurality of memory cells, wherein each of the plurality of memory cells includes a switching element, and a data storage element connected to the switching element, wherein the data storage element includes a phase change material; and a memory controller configured to perform a control operation with respect to a first memory cell of the plurality of memory cells by inputting an operating current to the first memory cell, and inputting a compensation current flowing from the data storage element to the switching element in the first memory cell before or after inputting the operating current to the first memory cell.
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2.发明授权公开(公告)号：US10074426B2
公开(公告)日：2018-09-11
申请号：US15677052
申请日：2017-08-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Chea Ouk Lim , Hyun Kook Park , Jung Sunwoo , Young Hoon Oh , Yong Jun Lee
CPC classification number: G11C13/0069 , G06F11/1048 , G06F11/1068 , G11C11/5678 , G11C11/5685 , G11C13/0002 , G11C13/0004 , G11C13/0007 , G11C13/003 , G11C13/004 , G11C29/52 , G11C2013/0076 , G11C2029/0411 , G11C2213/71 , G11C2213/72 , G11C2213/76 , G11C2213/79
Abstract: A memory device having a resistance change material and an operating method of the memory device are provided. A memory device includes a memory cell array including first and second resistive memory cells, which store different data according to the change of their resistance; a buffer including first and second storage regions corresponding to the first and second resistive memory cells, respectively; and a control circuit receiving program data to be programmed to the memory cell array, comparing first data stored in the first storage region and second data stored in the first resistive memory cell, and as a result of the comparison determining one of the first and second storage regions as a storage region to which to write the program data.
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3.发明授权Method of operating nonvolatile memory device comprising resistance material 有权包括电阻材料的非易失性存储器件的操作方法公开(公告)号：US09405615B2
公开(公告)日：2016-08-02
申请号：US14278354
申请日：2014-05-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jung Sunwoo , Kwang-Jin Lee
CPC classification number: G06F11/10 , G11C11/1673 , G11C11/1693 , G11C13/0004 , G11C13/004 , G11C16/26 , G11C29/021 , G11C29/028 , G11C2013/0054 , G11C2013/0057 , G11C2029/0409 , G11C2029/0411
Abstract: A method of operating a nonvolatile memory device comprises applying a read current with a first level to a nonvolatile memory cell comprising a variable resistance material, determining read data based on the applied read current, checking a syndrome corresponding to the read data to determine whether the read data is pass or fail, changing the read current from the first level to a second level, which is different from the first level, according to the determination of whether the read data is pass or fail, and performing a read-retry operation comprising applying the read current of the second level to the nonvolatile memory cell.
Abstract translation: 一种操作非易失性存储器件的方法包括将具有第一电平的读取电流施加到包括可变电阻材料的非易失性存储器单元，基于所应用的读取电流确定读取数据，检查与所读取的数据相对应的校正子，以确定是否 读取数据通过或失败，根据所读取的数据是否通过的确定，将读取的电流从第一电平改变到与第一电平不同的第二电平，并执行读取重试操作，包括 将第二级的读取电流施加到非易失性存储单元。
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公开(公告)号：US10340000B2
公开(公告)日：2019-07-02
申请号：US15795245
申请日：2017-10-26
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyun Kook Park , Jung Sunwoo , Chi Weon Yoon
IPC: G11C13/00
Abstract: An operating method of a memory device is provided. Using a statistical model, a resistance Rdyn of a variable resistor of a memory cell and a variation ΔRdyn of the resistance Rdyn are determined. Based on the resistance Rdyn and the variation ΔRdyn of the resistance Rdyn, an average resistance Rdyn_avg and a beta value of the variable resistor are determined. Then, using the average resistance Rdyn_avg and the beta value, a resistance Ra of an insertion resistor, connected between the memory cell and a power supply generator for generating a power supply voltage VPGM, is determined.
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公开(公告)号：US20190130969A1
公开(公告)日：2019-05-02
申请号：US16100295
申请日：2018-08-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： CHEA OUK LIM , Tae Hul Na , Jung Sunwoo , Yong Jun Lee
CPC classification number: G11C13/0004 , G11C11/5678 , G11C13/003 , G11C13/004 , G11C13/0069 , G11C2013/0045 , G11C2013/0052 , G11C2013/0092 , G11C2213/72 , G11C2213/76
Abstract: A memory device includes: a memory cell array including a plurality of memory cells, wherein each of the plurality of memory cells includes a switching element, and a data storage element connected to the switching element, wherein the data storage element includes a phase change material; and a memory controller configured to perform a control operation with respect to a first memory cell of the plurality of memory cells by inputting an operating current to the first memory cell, and inputting a compensation current flowing from the data storage element to the switching element in the first memory cell before or after inputting the operating current to the first memory cell.
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Patent Agency Ranking
公开(公告)号：US11636895B2
公开(公告)日：2023-04-25
申请号：US16870506
申请日：2020-05-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Cheaouk Lim , Jung Sunwoo , Kwangjin Lee
Abstract: A writing method for a non-volatile memory device includes; performing a sensing operation, comparing write data with read data retrieved by the sensing operation, determining whether the write data is set state when the write data and the read data are the same, performing a set operation when the write data is set state, and not performing a write operation when the write data is not set data.
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公开(公告)号：US20210118485A1
公开(公告)日：2021-04-22
申请号：US16881351
申请日：2020-05-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Cheaouk Lim , Jung Sunwoo , Kwangjin Lee
IPC: G11C11/408 , G11C11/4094 , G11C11/4074 , G11C11/56
Abstract: A memory device includes a plurality of memory cells, each memory cell including a switching element and a data storage element having a phase change material, and each memory cell connected to one of a plurality of wordlines and to one of a plurality of bitlines, a decoder circuit configured to determine at least one of the plurality of memory cells as a selected memory cell, and a programming circuit configured to input a program current to the selected memory cell to perform a program operation, to detect a holding voltage of the selected memory cell, and to adjust a magnitude of the program current based on the detected holding voltage. The selected memory cell is turned off when a voltage across the selected memory cell is lower than the holding voltage.
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公开(公告)号：US09928140B2
公开(公告)日：2018-03-27
申请号：US15377518
申请日：2016-12-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jung Sunwoo
CPC classification number: G06F11/1072 , G06F11/1044 , G06F11/1068 , G11C29/52 , G11C2029/0411
Abstract: A method of operating a non-volatile memory device, includes, storing sensed data in a page buffer circuit by sensing data stored in a source page of a memory cell array, outputting the sensed data from the page buffer circuit, performing error correction code (ECC) decoding of the sensed data output from the page buffer circuit, storing the decoded data in the page buffer circuit, and providing de-randomized data to an external device as read data by performing de-randomizing of the decoded data output from the page buffer circuit using seed values corresponding to the source page.
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公开(公告)号：US20170293449A1
公开(公告)日：2017-10-12
申请号：US15401294
申请日：2017-01-09
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jung Sunwoo , Makoto Hirano
CPC classification number: G06F3/0638 , G06F3/061 , G06F3/0619 , G06F3/0656 , G06F3/0658 , G06F3/0679 , G06F11/1068 , G11C29/52 , G11C2029/0409
Abstract: A nonvolatile memory device includes a memory cell array including a plurality of first segments having a write data, and a plurality of second segments having a programmed information defining a programmed segment from the plurality of first segments. A randomizer is configured to randomize the write data. An error correction circuit is configured to perform an error correction operation on the write data. A control logic is configured to determine the programmed information from an address received from a memory controller, and to determine whether to operate the randomizer and the error correction circuit based on the determination of the programmed information during the program operation. A page buffer is configured to store the write data and the programmed information during the randomizing and the error correction operation.
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公开(公告)号：US11238927B2
公开(公告)日：2022-02-01
申请号：US16881351
申请日：2020-05-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Cheaouk Lim , Jung Sunwoo , Kwangjin Lee
IPC: G11C13/00 , G11C11/408 , G11C11/56 , G11C11/4074 , G11C11/4094
Abstract: A memory device includes a plurality of memory cells, each memory cell including a switching element and a data storage element having a phase change material, and each memory cell connected to one of a plurality of wordlines and to one of a plurality of bitlines, a decoder circuit configured to determine at least one of the plurality of memory cells as a selected memory cell, and a programming circuit configured to input a program current to the selected memory cell to perform a program operation, to detect a holding voltage of the selected memory cell, and to adjust a magnitude of the program current based on the detected holding voltage. The selected memory cell is turned off when a voltage across the selected memory cell is lower than the holding voltage.
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