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    Peripheral RF feed and symmetric RF return for symmetric RF delivery
    1.
    发明授权
    Peripheral RF feed and symmetric RF return for symmetric RF delivery 有权

    公开(公告)号：US10586686B2

    公开(公告)日：2020-03-10

    申请号：US13403760

    申请日：2012-02-23

    申请人： Sang Ki Nam ,  Rajinder Dhindsa ,  James Rogers

    发明人： Sang Ki Nam ,  Rajinder Dhindsa ,  James Rogers

    IPC分类号： H01J37/32 ,  H01L21/683

    摘要： Systems and methods are presented for a peripheral RF feed and symmetric RF return for symmetric RF delivery. According to one embodiment, a chuck assembly for plasma processing is provided. The chuck assembly includes an electrostatic chuck having a substrate support surface on a first side, and a facility plate coupled to the electrostatic chuck on a second side that is opposite the substrate support surface. A hollow RF feed is configured to deliver RF power, the hollow RF feed defined by a first portion contacting a periphery of the facility plate and a second portion coupled to the first portion, the second portion extending away from the chuck assembly.

    Peripheral RF Feed and Symmetric RF Return for Symmetric RF Delivery
    2.
    发明申请
    Peripheral RF Feed and Symmetric RF Return for Symmetric RF Delivery 审中-公开
    外设射频馈送和对称RF传输的对称RF返回

    公开(公告)号：US20130128409A1

    公开(公告)日：2013-05-23

    申请号：US13403760

    申请日：2012-02-23

    申请人： Sang Ki Nam ,  Rajinder Dhindsa ,  James Rogers

    发明人： Sang Ki Nam ,  Rajinder Dhindsa ,  James Rogers

    IPC分类号： H01L21/683

    摘要： Systems and methods are presented for a peripheral RF feed and symmetric RF return for symmetric RF delivery. According to one embodiment, a chuck assembly for plasma processing is provided. The chuck assembly includes an electrostatic chuck having a substrate support surface on a first side, and a facility plate coupled to the electrostatic chuck on a second side that is opposite the substrate support surface. A hollow RF feed is configured to deliver RF power, the hollow RF feed defined by a first portion contacting a periphery of the facility plate and a second portion coupled to the first portion, the second portion extending away from the chuck assembly.

    摘要翻译： 提出了用于对称RF传输的外围RF馈送和对称RF返回的系统和方法。 根据一个实施例，提供了一种用于等离子体处理的卡盘组件。 卡盘组件包括具有在第一侧上的基板支撑表面的静电卡盘和在与基板支撑表面相对的第二侧上耦合到静电卡盘的设备板。 空心RF馈送被配置为提供RF功率，中空RF馈送由接触设备板的周边的第一部分和联接到第一部分的第二部分限定，第二部分远离卡盘组件延伸。

    Chuck assembly for plasma processing
    4.
    发明授权
    Chuck assembly for plasma processing 有权
    用于等离子体处理的卡盘组件

    公开(公告)号：US08898889B2

    公开(公告)日：2014-12-02

    申请号：US13419369

    申请日：2012-03-13

    申请人： Sang Ki Nam ,  Rajinder Dhindsa ,  Alexei Marakhtanov

    发明人： Sang Ki Nam ,  Rajinder Dhindsa ,  Alexei Marakhtanov

    IPC分类号： B23P19/00 ,  H01J37/32 ,  H01L21/683

    CPC分类号： H01J37/32577 ,  H01J37/32715 ,  H01L21/6831 ,  Y10T29/49117 ,  Y10T29/53178 ,  Y10T279/23

    摘要： Systems and methods are presented for a peripheral RF feed and symmetric RF return for symmetric RF delivery. According to one embodiment, a chuck assembly for plasma processing is provided. The chuck assembly includes an electrostatic chuck having a substrate support surface on a first side, a facility plate coupled to the electrostatic chuck on a second side that is opposite the substrate support surface, a peripheral RF feed configured to deliver RF power, the peripheral RF feed having a first portion contacting a periphery of the facility plate and an RF strap coupling the peripheral RF feed to an RF source.

    摘要翻译： 提出了用于对称RF传输的外围RF馈送和对称RF返回的系统和方法。 根据一个实施例，提供了一种用于等离子体处理的卡盘组件。 卡盘组件包括：静电卡盘，其具有在第一侧上的基板支撑表面，在与基板支撑表面相对的第二侧耦合到静电卡盘的设备板，被配置为提供RF功率的外围RF馈送，外围RF 进料具有接触设备板的周边的第一部分和将外围RF进料耦合到RF源的RF带。

    METHODS AND APPARATUS FOR SELECTIVELY MODIFYING RF CURRENT PATHS IN A PLASMA PROCESSING SYSTEM
    5.
    发明申请
    METHODS AND APPARATUS FOR SELECTIVELY MODIFYING RF CURRENT PATHS IN A PLASMA PROCESSING SYSTEM 有权
    在等离子体处理系统中选择性地修改射频电流的方法和装置

    公开(公告)号：US20130240482A1

    公开(公告)日：2013-09-19

    申请号：US13423281

    申请日：2012-03-19

    申请人： Sang Ki Nam ,  Rajinder Dhindsa ,  Alexei Marakhtanov

    发明人： Sang Ki Nam ,  Rajinder Dhindsa ,  Alexei Marakhtanov

    IPC分类号： C23F1/08 ,  G01N33/00

    CPC分类号： H01J37/32935 ,  C23C16/4585 ,  C23C16/505 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/32697 ,  H01J37/32715 ,  H01J37/3299 ,  H01J2237/327 ,  H01J2237/3343

    摘要： Methods and apparatus for modifying RF current path lengths are disclosed. Apparatus includes a plasma processing system having an RF power supply and a lower electrode having a conductive portion. There is included an insulative component disposed in an RF current path between the RF power supply and the conductive portion. There are included a plurality of RF path modifiers disposed within the insulative component, the plurality of RF path modifiers being disposed at different angular positions relative to a reference angle drawn from a center of the insulative component, whereby at least a first one of the plurality of RF path modifiers is electrically connected to the conductive portion and at least a second one of the plurality of the plurality of RF path modifiers is not electrically connected to the conductive portion.

    摘要翻译： 公开了用于修改RF电流路径长度的方法和装置。 装置包括具有RF电源的等离子体处理系统和具有导电部分的下电极。 包括设置在RF电源和导电部分之间的RF电流路径中的绝缘部件。 包括设置在绝缘部件内的多个RF路径修改器，多个RF路径修改器相对于从绝缘部件的中心绘制的参考角度设置在不同的角位置，由此至少第一个 的RF路径修改器电连接到导电部分，并且多个RF路径修改器中的至少第二个RF电路修改器未电连接到导电部分。

    METHODS AND APPARATUS FOR SELECTIVELY MODULATING AZIMUTHAL NON-UNIFORMITY IN A PLASMA PROCESSING SYSTEM
    6.
    发明申请
    METHODS AND APPARATUS FOR SELECTIVELY MODULATING AZIMUTHAL NON-UNIFORMITY IN A PLASMA PROCESSING SYSTEM 审中-公开
    在等离子体处理系统中选择性地调整AZIMUTHAL非均匀性的方法和装置

    公开(公告)号：US20130240147A1

    公开(公告)日：2013-09-19

    申请号：US13423284

    申请日：2012-03-19

    申请人： Sang Ki Nam ,  Rajinder Dhindsa ,  Alexei Marakhtanov

    发明人： Sang Ki Nam ,  Rajinder Dhindsa ,  Alexei Marakhtanov

    IPC分类号： H01L21/3065

    CPC分类号： H01J37/32082 ,  H01J37/32669

    摘要： Methods and apparatus for modulating azimuthal non-uniformity in a plasma processing chamber are disclosed. Apparatus includes a plasma processing system having a plasma processing chamber. There is included an RF power supply and a lower electrode configured to receive RF signal from the power supply. There is also included magnet ring disposed off-center relative to a center of the lower electrode, the magnet ring further disposed in one of a first position and a second position, the first position being below the lower electrode, the second position being around an outer periphery of the lower electrode.

    摘要翻译： 公开了用于调制等离子体处理室中的方位不均匀性的方法和装置。 装置包括具有等离子体处理室的等离子体处理系统。 包括RF电源和配置成从电源接收RF信号的下电极。 还包括相对于下电极的中心偏心设置的磁环，磁环进一步设置在第一位置和第二位置中的一个位置，第一位置在下电极下方，第二位置围绕下电极 下电极的外周。

    PERIPHERAL RF FEED AND SYMMETRIC RF RETURN WITH RF STRAP INPUT
    7.
    发明申请
    PERIPHERAL RF FEED AND SYMMETRIC RF RETURN WITH RF STRAP INPUT 有权
    外围射频馈线和对射RF返回与RF STRAP输入

    公开(公告)号：US20130127124A1

    公开(公告)日：2013-05-23

    申请号：US13419369

    申请日：2012-03-13

    申请人： Sang Ki Nam ,  Rajinder Dhindsa ,  Alexei Marakhtanov

    发明人： Sang Ki Nam ,  Rajinder Dhindsa ,  Alexei Marakhtanov

    IPC分类号： B23B31/28 ,  H05K13/00

    CPC分类号： H01J37/32577 ,  H01J37/32715 ,  H01L21/6831 ,  Y10T29/49117 ,  Y10T29/53178 ,  Y10T279/23

    摘要： Systems and methods are presented for a peripheral RF feed and symmetric RF return for symmetric RF delivery. According to one embodiment, a chuck assembly for plasma processing is provided. The chuck assembly includes an electrostatic chuck having a substrate support surface on a first side, a facility plate coupled to the electrostatic chuck on a second side that is opposite the substrate support surface, a peripheral RF feed configured to deliver RF power, the peripheral RF feed having a first portion contacting a periphery of the facility plate and an RF strap coupling the peripheral RF feed to an RF source.

    摘要翻译： 提出了用于对称RF传输的外围RF馈送和对称RF返回的系统和方法。 根据一个实施例，提供了一种用于等离子体处理的卡盘组件。 卡盘组件包括：静电卡盘，其具有在第一侧上的基板支撑表面，在与基板支撑表面相对的第二侧耦合到静电卡盘的设备板，被配置为提供RF功率的外围RF馈送，外围RF 进料具有接触设备板的周边的第一部分和将外围RF进料耦合到RF源的RF带。

    Methods and apparatus for selectively modifying RF current paths in a plasma processing system
    10.
    发明授权
    Methods and apparatus for selectively modifying RF current paths in a plasma processing system 有权
    用于选择性地修改等离子体处理系统中的RF电流路径的方法和装置

    公开(公告)号：US08911588B2

    公开(公告)日：2014-12-16

    申请号：US13423281

    申请日：2012-03-19

    申请人： Sang Ki Nam ,  Rajinder Dhindsa ,  Alexei Marakhtanov

    发明人： Sang Ki Nam ,  Rajinder Dhindsa ,  Alexei Marakhtanov

    IPC分类号： H01J37/04 ,  H01J37/24 ,  H01J37/248 ,  C23C16/505 ,  C23C16/52 ,  H01J37/32 ,  C23C16/458

    CPC分类号： H01J37/32935 ,  C23C16/4585 ,  C23C16/505 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/32697 ,  H01J37/32715 ,  H01J37/3299 ,  H01J2237/327 ,  H01J2237/3343

    摘要： Methods and apparatus for modifying RF current path lengths are disclosed. Apparatus includes a plasma processing system having an RF power supply and a lower electrode having a conductive portion. There is included an insulative component disposed in an RF current path between the RF power supply and the conductive portion. There are included a plurality of RF path modifiers disposed within the insulative component, the plurality of RF path modifiers being disposed at different angular positions relative to a reference angle drawn from a center of the insulative component, whereby at least a first one of the plurality of RF path modifiers is electrically connected to the conductive portion and at least a second one of the plurality of the plurality of RF path modifiers is not electrically connected to the conductive portion.

    摘要翻译： 公开了用于修改RF电流路径长度的方法和装置。 装置包括具有RF电源的等离子体处理系统和具有导电部分的下电极。 包括设置在RF电源和导电部分之间的RF电流路径中的绝缘部件。 包括设置在绝缘部件内的多个RF路径修改器，多个RF路径修改器相对于从绝缘部件的中心绘制的参考角度设置在不同的角位置，由此至少第一个 的RF路径修改器电连接到导电部分，并且多个RF路径修改器中的至少第二个RF电路修改器未电连接到导电部分。