公开(公告)号：US06197683B1

公开(公告)日：2001-03-06

申请号：US09156724

申请日：1998-09-18

申请人： Sang-bom Kang ,  Chang-soo Park ,  Yun-sook Chae ,  Sang-in Lee

发明人： Sang-bom Kang ,  Chang-soo Park ,  Yun-sook Chae ,  Sang-in Lee

IPC分类号： H01L2144

CPC分类号： H01L21/76843 ,  C23C16/34 ,  C23C16/45553 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76804 ,  H01L28/91

摘要： A method of forming a metal nitride film using chemical vapor deposition (CVD), and a method of forming a metal contact of a semiconductor device using the same, are provided. The method of forming a metal nitride film using chemical vapor deposition (CVD) in which a metal source and a nitrogen source are used as a precursor, includes the steps of inserting a semiconductor substrate into a deposition chamber, flowing the metal source into the deposition chamber, removing the metal source remaining in the deposition chamber by cutting off the inflow of the metal source and flowing a purge gas into the deposition chamber, cutting off the purge gas and flowing the nitrogen source into the deposition chamber to react with the metal source adsorbed on the semiconductor substrate, and removing the nitrogen source remaining in the deposition chamber by cutting off the inflow of the nitrogen source and flowing the purge gas into the deposition chamber. Accordingly, the metal nitride film has low resistivity and a low content of Cl even with excellent step coverage, and it can be formed at a temperature of 500° C. or lower. Also, a deposition speed, approximately 20 Å/cycle, is suitable for mass production.

摘要翻译： 提供了使用化学气相沉积（CVD）形成金属氮化物膜的方法，以及使用其形成使用其的半导体器件的金属接触的方法。 使用其中使用金属源和氮源作为前体的化学气相沉积（CVD）形成金属氮化物膜的方法包括以下步骤：将半导体衬底插入淀积室中，使金属源流入沉积物 通过切断金属源的流入并将净化气体流入沉积室，去除沉积室中残留的金属源，切断净化气体并使氮源流入沉积室以与金属源反应 吸附在半导体衬底上，并且通过切断氮源的流入并将净化气体流入沉积室来除去留在沉积室中的氮源。 因此，即使具有优异的阶梯覆盖，金属氮化物膜也具有低电阻率和低的Cl含量，并且可以在500℃或更低的温度下形成。 此外，沉积速度约为每秒的一个循环，适合批量生产。

公开(公告)号：US06174809B1

公开(公告)日：2001-01-16

申请号：US09212090

申请日：1998-12-15

申请人： Sang-bom Kang ,  Yun-sook Chae ,  Chang-soo Park ,  Sang-in Lee

发明人： Sang-bom Kang ,  Yun-sook Chae ,  Chang-soo Park ,  Sang-in Lee

IPC分类号： H01L2144

CPC分类号： H01L21/76846 ,  C23C16/45561 ,  H01L21/28518 ,  H01L21/28562 ,  H01L21/76843

摘要： A method for forming a metal layer using an atomic layer deposition process. A sacrificial metal atomic layer is formed on a semiconductor substrate by reacting a precursor containing a metal with a reducing gas, and a metal atomic layer is formed of metal atoms separated from a metal halide gas on a semiconductor substrate by reacting the sacrificial metal atomic layer with a metal halide gas. Also, a silicon atomic layer may be additionally formed on the metal atomic layer using a silicon source gas, to thereby alternately stack metal atomic layers and silicon layers. Thus, a metal layer or a metal silicide layer having excellent step coverage can be formed on the semiconductor substrate.

摘要翻译： 一种使用原子层沉积工艺形成金属层的方法。 通过使包含金属的前体与还原气体反应而在半导体衬底上形成牺牲金属原子层，并且金属原子层由半导体衬底上的金属卤化物气体分离的金属原子形成，通过使牺牲金属原子层 与金属卤化物气体。 此外，可以使用硅源气体在金属原子层上另外形成硅原子层，从而交替堆叠金属原子层和硅层。 因此，可以在半导体衬底上形成具有优异的阶梯覆盖的金属层或金属硅化物层。

公开(公告)号：US06478872B1

公开(公告)日：2002-11-12

申请号：US09467313

申请日：1999-12-20

申请人： Yun-sook Chae ,  In-sang Jeon ,  Sang-bom Kang ,  Sang-in Lee ,  Kyu-wan Ryu

发明人： Yun-sook Chae ,  In-sang Jeon ,  Sang-bom Kang ,  Sang-in Lee ,  Kyu-wan Ryu

IPC分类号： C30B2500

CPC分类号： C30B25/14 ,  C23C16/45548 ,  C23C16/45565 ,  C23C16/45574

摘要： A method of delivering two or more mutually-reactive reaction gases when a predetermined film is deposited on a substrate, and a shower head used in the gas delivery method, function to increase the film deposition rate while preventing formation of contaminating particles. In this method, one reaction gas is delivered toward the edge of the substrate, and the other reaction gases are delivered toward the central portion of the substrate, each of the reaction gases being delivered via an independent gas outlet to prevent the reaction gases from being mixed. In the shower head, separate passages are provided to prevent the first reaction gas from mixing with the other reaction gases by delivering the first reaction gas from outlets formed around the edge of the bottom surface of the shower head. The other reaction gases are delivered from outlets formed in the central portion of the bottom surface of the shower head. Accordingly, one of the mutually-reactive gases is delivered toward the central portion of the substrate, and the others are delivered toward the edge of the substrate.

摘要翻译： 当将预定的膜沉积在基底上时输送两个或更多个相互反应的反应气体的方法和用于气体输送方法的淋浴头的作用是提高膜沉积速率同时防止污染颗粒的形成。 在该方法中，一个反应气体被输送到基板的边缘，并且其它反应气体被输送到基板的中心部分，每个反应气体经由独立的气体出口输送，以防止反应气体 混合 在喷淋头中，设置分开的通道，以防止第一反应气体与其它反应气体混合，通过从喷淋头底表面的边缘周围形成的出口输送第一反应气体。 其他反应气体从形成在淋浴喷头的底面的中心部分的出口输送。 因此，相互反应的气体中的一种被输送到基板的中心部分，而其它的被传送到基板的边缘。

公开(公告)号：US06458701B1

公开(公告)日：2002-10-01

申请号：US09686622

申请日：2000-10-12

申请人： Yun-sook Chae ,  Sang-bom Kang ,  Gil-heyun Choi ,  In-sang Jeon

发明人： Yun-sook Chae ,  Sang-bom Kang ,  Gil-heyun Choi ,  In-sang Jeon

IPC分类号： C23L1608

CPC分类号： C23C16/0281 ,  C23C16/0218 ,  C23C16/14 ,  H01L21/28556 ,  H01L21/28568

摘要： A method for forming a metal layer located over a metal underlayer of a semiconductor device, using a metal halogen gas. The method involves supplying a predetermined reaction gas into a reaction chamber for a predetermined period of time prior to deposition of the metal layer. The reaction gas has a higher reactivity with an active halogen element of a metal halogen gas supplied to form the metal layer, compared to a metal element of the metal halogen gas. As the metal halogen gas is supplied into the reaction chamber, the reaction gas reacts with the halogen radicals of the metal halogen gas, so that the metal underlayer is protected from being contaminated by impurities containing the halogen radicals.

摘要翻译： 一种使用金属卤素气体形成位于半导体器件的金属底层上的金属层的方法。 该方法包括在沉积金属层之前将预定的反应气体提供给反应室预定的时间。 与金属卤素气体的金属元素相比，反应气体与供给的金属卤素气体的活性卤素元素的反应性较高，形成金属层。 当将金属卤素气体供应到反应室中时，反应气体与金属卤素气体的卤素自由基反应，从而保护金属底层免受含有卤素基团的杂质的污染。

公开(公告)号：US06372598B1

公开(公告)日：2002-04-16

申请号：US09334588

申请日：1999-06-16

申请人： Sang-bum Kang ,  Yun-sook Chae ,  Sang-in Lee ,  Hyun-seok Lim ,  Mee-young Yoon

发明人： Sang-bum Kang ,  Yun-sook Chae ,  Sang-in Lee ,  Hyun-seok Lim ,  Mee-young Yoon

IPC分类号： H01L2120

摘要： A selective metal layer formation method, a capacitor formation method using the same, and a method of forming an ohmic layer on a contact hole and filling the contact hole using the same, are provided. A sacrificial metal layer is selectively deposited on a conductive layer by supplying a sacrificial metal source gas which deposits selectively on a semiconductor substrate having an insulating film and the conductive layer. Sacrificial metal atoms and a halide are formed, and the sacrificial metal layer is replaced with a deposition metal layer such as titanium Ti or platinum Pt, by supplying a metal halide gas having a halogen coherence smaller than the halogen coherence of the metal atoms in the sacrificial metal layer. If such a process is used to form a capacitor lower electrode or form an ohmic layer on the bottom of a contact hole, a metal layer can be selectively formed at a temperature of 500° C. or lower.

公开(公告)号：US20070197014A1

公开(公告)日：2007-08-23

申请号：US11702841

申请日：2007-02-06

申请人： Jin-ho Jeon ,  Cha-won Koh ,  Yun-sook Chae ,  Gi-sung Yeo ,  Tae-young Kim

发明人： Jin-ho Jeon ,  Cha-won Koh ,  Yun-sook Chae ,  Gi-sung Yeo ,  Tae-young Kim

IPC分类号： H01L21/44

CPC分类号： H01L21/76816 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144

摘要： A method of fabricating a semiconductor device includes forming an interlayer insulating layer on a semiconductor substrate, forming a hard mask layer on the interlayer insulating layer, forming a hard mask pattern in which a plurality of contact hole patterns are formed by patterning the hard mask layer at least two times, conformally forming a supporting liner layer on the hard mask pattern, which supports the hard mask pattern during etching by reinforcing the thickness of the hard mask pattern, forming a plurality of contact hole patterns in the interlayer insulating layer using the hard mask pattern on which the supporting liner layer is formed as an etching mask, and forming contact plugs filling the plurality of contact hole patterns.

摘要翻译： 一种制造半导体器件的方法包括在半导体衬底上形成层间绝缘层，在层间绝缘层上形成硬掩模层，形成硬掩模图形，其中形成多个接触孔图案， 至少两次，在硬掩模图案上保形地形成支撑衬垫层，其在蚀刻期间通过加强硬掩模图案的厚度来支撑硬掩模图案，在层间绝缘层中使用硬的掩模图案形成多个接触孔图案 掩模图案，其上形成有支撑衬垫层作为蚀刻掩模，以及形成填充多个接触孔图案的接触塞。

公开(公告)号：US06835970B2

公开(公告)日：2004-12-28

申请号：US10087063

申请日：2002-03-01

申请人： Dong-seok Nam ,  Ji-soo Kim ,  Yun-sook Chae

发明人： Dong-seok Nam ,  Ji-soo Kim ,  Yun-sook Chae

IPC分类号： H01L2710

CPC分类号： H01L21/76897

摘要： A semiconductor device having self-aligned contact pads and a method for manufacturing the same are provided. The semiconductor device includes a semiconductor substrate and an isolation layer formed on the semiconductor substrate. The semiconductor substrate defines a plurality of active regions that each have a major axis and a minor axis. A plurality of gates are formed to cross the plurality of active regions and extend in the direction of the minor axis. First and second source/drain regions are formed in active regions at either side of each of the gates. First and second self-aligned contact pads (SACs) are formed to contact the top surfaces of the first and second source/drain regions, respectively.

摘要翻译： 提供了具有自对准接触焊盘的半导体器件及其制造方法。 半导体器件包括半导体衬底和形成在半导体衬底上的隔离层。 半导体衬底限定多个有源区域，每个有源区域具有长轴和短轴。 多个门形成为跨越多个有源区并沿短轴的方向延伸。 第一和第二源极/漏极区域形成在每个栅极的任一侧的有源区域中。 形成第一和第二自对准接触焊盘（SAC）以分别接触第一和第二源极/漏极区域的顶表面。

公开(公告)号：US07297466B2

公开(公告)日：2007-11-20

申请号：US10375102

申请日：2003-02-28

申请人： Sung-ho Lee ,  Sang-gyun Woo ,  Yun-sook Chae ,  Ji-soo Kim

发明人： Sung-ho Lee ,  Sang-gyun Woo ,  Yun-sook Chae ,  Ji-soo Kim

IPC分类号： G03F7/30 ,  G03F7/004

CPC分类号： G03F7/405 ,  Y10S430/108

摘要： An organic anti-reflective coating (ARC) is formed over a surface of a semiconductor substrate, and a resist layer including a photosensitive polymer is formed on the ARC. The photoresistive polymer contains a hydroxy group. The resist layer is then subjected to exposure and development to form a resist pattern. The resist pattern to then silylated to a given depth by exposing a surface of the resist pattern to a vapor phase organic silane mixture of a first organic silane compound having a functional group capable of reacting with the hydroxy group of the photoresistive polymer, and a second organic silane compound having two functional groups capable of reacting with the hydroxy group of the photoresistive polymer Then, the silylated resist pattern is thermally treated, and the organic ARC is an isotropically etched using the thermally treated resist pattern as an etching mask.

摘要翻译： 在半导体衬底的表面上形成有机抗反射涂层（ARC），并且在ARC上形成包括光敏聚合物的抗蚀剂层。 光致抗蚀剂聚合物含有羟基。 然后对抗蚀剂层进行曝光和显影以形成抗蚀剂图案。 然后通过将抗蚀剂图案的表面暴露于具有能够与光致抗蚀剂聚合物的羟基反应的官能团的第一有机硅烷化合物的气相有机硅烷混合物，然后将抗蚀剂图案甲硅烷基化至给定深度， 具有能够与光致抗蚀剂聚合物的羟基反应的两个官能团的有机硅烷化合物然后，对该甲硅烷基化抗蚀剂图案进行热处理，并使用热处理抗蚀剂图案作为蚀刻掩模进行各向异性蚀刻。

公开(公告)号：US20070023916A1

公开(公告)日：2007-02-01

申请号：US11494469

申请日：2006-07-28

申请人： Jung-hwan Hah ,  Yun-sook Chae ,  Han-ku Cho ,  Chang-jin Kang ,  Sang-gyun Woo ,  Man-hyoung Ryoo ,  Young-jae Jung

发明人： Jung-hwan Hah ,  Yun-sook Chae ,  Han-ku Cho ,  Chang-jin Kang ,  Sang-gyun Woo ,  Man-hyoung Ryoo ,  Young-jae Jung

IPC分类号： H01L23/52

CPC分类号： H01L21/31144 ,  G03F7/091 ,  H01L21/0276 ,  H01L21/32139

摘要： The semiconductor structure includes an etch target layer to be pattemed, a multiple bottom anti-reflective coating (BARC) layer, and a photoresist (PR) pattern. The multiple BARC layer includes a first mask layer formed on the etch target layer and containing carbon, and a second mask layer formed on the first mask layer and containing silicon. A PR layer formed on the multiple BARC layer undergoes photolithography to form the PR pattern on the multiple BARC layer. The multiple BARC layer has a reflectance of 2% or less, and an interface angle between the PR pattern and the multiple BARC layer is 80° to 90°.

摘要翻译： 该半导体结构包括要被图案化的蚀刻目标层，多个底部抗反射涂层（BARC）层和光致抗蚀剂（PR）图案。 多个BARC层包括形成在蚀刻靶层上并含有碳的第一掩模层和形成在第一掩模层上并含有硅的第二掩模层。 形成在多个BARC层上的PR层经历光刻以在多个BARC层上形成PR图案。 多个BARC层的反射率为2％以下，PR图案与多个BARC层之间的界面角为80°〜90°。

公开(公告)号：US20060228895A1

公开(公告)日：2006-10-12

申请号：US11357131

申请日：2006-02-21

申请人： Yun-sook Chae ,  Gyung-jin Min ,  Chul-ho Shin ,  Sang-wook Kim

发明人： Yun-sook Chae ,  Gyung-jin Min ,  Chul-ho Shin ,  Sang-wook Kim

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/0273 ,  G03F7/0035 ,  G03F7/405 ,  H01L21/02167 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/31138 ,  H01L21/312

摘要： A method of forming a photoresist pattern comprises providing a semiconductor substrate on which a layer to be etched is formed. The method further comprises forming a first photoresist pattern on the layer to be etched, processing the first photoresist pattern with hydrogen bromide (HBr) plasma, and forming a second photoresist pattern on the semiconductor substrate between the first photoresist patterns

摘要翻译： 形成光致抗蚀剂图案的方法包括提供其上形成有待蚀刻的层的半导体衬底。 该方法还包括在待蚀刻的层上形成第一光致抗蚀剂图案，用溴化氢（HBr）等离子体处理第一光致抗蚀剂图案，以及在半导体衬底上在第一光致抗蚀剂图案