公开(公告)号：US06466597B1

公开(公告)日：2002-10-15

申请号：US09332163

申请日：1999-06-14

申请人： Masahiro Kume ,  Yuzaburo Ban ,  Kenji Harafuji ,  Isao Kidoguchi ,  Satoshi Kamiyama ,  Ayumu Tsujimura ,  Ryoko Miyanaga ,  Akihiko Ishibashi ,  Yoshiaki Hasegawa

发明人： Masahiro Kume ,  Yuzaburo Ban ,  Kenji Harafuji ,  Isao Kidoguchi ,  Satoshi Kamiyama ,  Ayumu Tsujimura ,  Ryoko Miyanaga ,  Akihiko Ishibashi ,  Yoshiaki Hasegawa

IPC分类号： G01S500

CPC分类号： B82Y20/00 ,  H01S5/2009 ,  H01S5/34333

摘要： A nitride semiconductor laser device includes an n-type contact layer of n-type GaN and an n-type cladding layer of n-type Al0.35Ga0.65N formed on a substrate of sapphire. On the n-type cladding layer, a multiple quantum well active layer of Al0.2Ga0.8N/Al0.25Ga0.75N, a p-type leak barrier layer of p-type Al0.5Ga0.5N0.975P0.025 and a p-type cladding layer of p-type Al0.4Ga0.6N0.98P0.02 are successively formed. The p-type leak barrier layer has a wider energy gap than the n-type cladding layer, and the p-type leak barrier layer and the p-type cladding layer include phosphorus for making an acceptor level shallow with keeping a wide energy gap.

摘要翻译： 氮化物半导体激光器件包括形成在蓝宝石衬底上的n型GaN的n型接触层和n型Al0.35Ga0.65N的n型覆层。 在n型覆层上，具有Al0.2Ga0.8N / Al0.25Ga0.75N的多量子阱有源层，p型Al0.5Ga0.5N0.975P0.025的p型阻挡层和p型 型p型Al0.4Ga0.6N0.98P0.02型包层依次形成。 p型漏电阻层的能隙比n型包覆层宽，p型漏电阻层和p型覆盖层包含磷，以使受主水平浅，保持宽的能隙。

公开(公告)号：US06324200B1

公开(公告)日：2001-11-27

申请号：US09294336

申请日：1999-04-20

申请人： Satoshi Kamiyama ,  Masahiro Kume ,  Ryoko Miyanaga ,  Isao Kidoguchi ,  Yuzaburo Ban ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi

发明人： Satoshi Kamiyama ,  Masahiro Kume ,  Ryoko Miyanaga ,  Isao Kidoguchi ,  Yuzaburo Ban ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi

IPC分类号： H01S319

CPC分类号： B82Y20/00 ,  H01S5/3054 ,  H01S5/3063 ,  H01S5/343 ,  H01S5/34333

摘要： A GaN buffer layer and an Si-doped n-type GaN contact layer are formed in this order on a sapphire substrate. An n-type Al0.3Ga0.7N cladding layer, an n-type Al0.25Ga0.75N optical guide layer, a multi-quantum well active layer, in which Al0.2Ga0.8N well layers and Al0.25Ga0.75N barrier layers are alternately stacked, an Mg-doped p-type Al0.25Ga0.75N optical guide layer, a p-type Al0.4Ga0.6N0.98P0.02 cladding layer and a p-type GaN contact layer are stacked in this order on an active region on the upper surface of the n-type contact layer.

摘要翻译： 在蓝宝石衬底上依次形成GaN缓冲层和Si掺杂n型GaN接触层。 n型Al0.3Ga0.7N覆层，n型Al0.25Ga0.75N光导层，多量子阱有源层，其中Al0.2Ga0.8N阱层和Al0.25Ga0.75N势垒层 交替堆叠，将Mg掺杂的p型Al0.25Ga0.75N光导层，p型Al0.4Ga0.6N0.98P0.02包覆层和p型GaN接触层依次层叠在 在n型接触层的上表面上的有源区。

公开(公告)号：US6072762A

公开(公告)日：2000-06-06

申请号：US289984

申请日：1999-04-13

申请人： Masahiro Kume ,  Yuzaburo Ban ,  Isao Kidoguchi ,  Satoshi Kamiyama ,  Ayumu Tsujimura ,  Akihiko Ishibashi ,  Yoshiaki Hasegawa ,  Ryoko Miyanaga

发明人： Masahiro Kume ,  Yuzaburo Ban ,  Isao Kidoguchi ,  Satoshi Kamiyama ,  Ayumu Tsujimura ,  Akihiko Ishibashi ,  Yoshiaki Hasegawa ,  Ryoko Miyanaga

IPC分类号： G11B7/005 ,  G11B7/125 ,  G11B7/135 ,  G11B11/105

CPC分类号： G11B7/126 ,  G11B11/10515 ,  G11B11/10543 ,  G11B7/005 ,  G11B7/128 ,  G11B7/1369 ,  G11B7/135

摘要： Between a semiconductor laser diode and an optical disk, a collimator lens for collimating a laser beam output from the semiconductor laser diode, a liquid crystal optical shutter for attenuating the collimated beam having passed through the collimator lens, and a beam splitter for splitting reflected light from the optical disk are disposed. In addition, a collective lens for collecting the collimated beam obtained by the collimator lens on a data holding surface of the optical disk is further disposed.

摘要翻译： 在半导体激光二极管和光盘之间，用于准直半导体激光二极管输出的激光束的准直透镜，用于衰减通过准直透镜的准直光束的液晶光学快门，以及用于分离反射光的分束器 从光盘配置。 此外，还设置有用于收集由准直透镜获得的准直光束在光盘的数据保持表面上的集体透镜。

公开(公告)号：US06911351B2

公开(公告)日：2005-06-28

申请号：US10345377

申请日：2003-01-16

申请人： Isao Kidoguchi ,  Akihiko Ishibashi ,  Ryoko Miyanaga ,  Gaku Sugahara ,  Masakatsu Suzuki ,  Masahiro Kume ,  Yuzaburo Ban ,  Kiyoyuki Morita ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa

发明人： Isao Kidoguchi ,  Akihiko Ishibashi ,  Ryoko Miyanaga ,  Gaku Sugahara ,  Masakatsu Suzuki ,  Masahiro Kume ,  Yuzaburo Ban ,  Kiyoyuki Morita ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa

IPC分类号： H01L21/20 ,  H01L33/00 ,  H01L33/12 ,  H01L33/40 ,  H01L33/46 ,  H01S5/20 ,  H01S5/22 ,  H01S5/323 ,  H01S5/40 ,  H01L21/00

CPC分类号： H01L33/12 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/405 ,  H01L33/46 ,  H01S5/2077 ,  H01S5/2201 ,  H01S5/32341 ,  H01S5/4031 ,  H01S2304/00

摘要： The method of fabricating a nitride semiconductor of this invention includes the steps of forming, on a substrate, a first nitride semiconductor layer of AluGavInwN, wherein 0≦u, v, w≦1 and u+v+w=1; forming, in an upper portion of the first nitride semiconductor layer, plural convexes extending at intervals along a substrate surface direction; forming a mask film for covering bottoms of recesses formed between the convexes adjacent to each other; and growing, on the first nitride semiconductor layer, a second nitride semiconductor layer of AlxGayInzN, wherein 0≦x, y, z≦1 and x+y+z=1, by using, as a seed crystal, C planes corresponding to top faces of the convexes exposed from the mask film.

摘要翻译： 本发明的氮化物半导体的制造方法包括以下步骤：在衬底上形成AlGaN的第一氮化物半导体层， / SUB，其中0≤u，v，w <= 1，u + v + w =​​ 1; 在所述第一氮化物半导体层的上部形成沿着基板表面方向间隔地延伸的多个凸部; 形成用于覆盖形成在彼此相邻的凸起之间的凹部的底部的掩模膜; 并且在所述第一氮化物半导体层上生长Al 2 O 3的第二氮化物半导体层，其中0 <= x ，y，z <= 1和x + y + z = 1，通过使用对应于从掩模膜暴露的凸起的顶面的C面作为晶种。

公开(公告)号：US06720586B1

公开(公告)日：2004-04-13

申请号：US09712127

申请日：2000-11-15

申请人： Isao Kidoguchi ,  Akihiko Ishibashi ,  Ryoko Miyanaga ,  Gaku Sugahara ,  Masakatsu Suzuki ,  Masahiro Kume ,  Yuzaburo Ban ,  Kiyoyuki Morita ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa

发明人： Isao Kidoguchi ,  Akihiko Ishibashi ,  Ryoko Miyanaga ,  Gaku Sugahara ,  Masakatsu Suzuki ,  Masahiro Kume ,  Yuzaburo Ban ,  Kiyoyuki Morita ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa

IPC分类号： H01L3300

CPC分类号： H01L33/12 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/405 ,  H01L33/46 ,  H01S5/2077 ,  H01S5/2201 ,  H01S5/32341 ,  H01S5/4031 ,  H01S2304/00

摘要： The method of fabricating a nitride semiconductor of this invention includes the steps of forming, on a substrate, a first nitride semiconductor layer of AluGavInwN, wherein 0≦u, v, w ≦1 and u+v+w=1; forming, in an upper portion of the first nitride semiconductor layer, plural convexes extending at intervals along a substrate surface direction; forming a mask film for covering bottoms of recesses formed between the convexes adjacent to each other; and growing, on the first nitride semiconductor layer, a second nitride semiconductor layer of AlxGayInzN, wherein 0≦x, y, z≦1 and x+y+z=1, by using, as a seed crystal, Cplanes corresponding to top faces of the convexes exposed from the mask film.

摘要翻译： 制造本发明的氮化物半导体的方法包括以下步骤：在衬底上形成AluGavInwN的第一氮化物半导体层，其中0≤u，v，w <= 1，u + v + w =​​ 1; 在所述第一氮化物半导体层的上部形成沿着基板表面方向间隔地延伸的多个凸部; 形成用于覆盖形成在彼此相邻的凸起之间的凹部的底部的掩模膜; 并且在第一氮化物半导体层上生长Al x Ga y In z N的第二氮化物半导体层，其中0≤x，y，z <= 1和x + y + z = 1，通过使用对应于 从掩模膜暴露的凸起的顶面。

公开(公告)号：US6030849A

公开(公告)日：2000-02-29

申请号：US94616

申请日：1998-06-15

申请人： Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Nobuyuki Uemura ,  Yuzaburo Ban ,  Masahiro Kume ,  Yoshihiro Hara ,  Isao Kidoguchi ,  Ayumu Tsujimura

发明人： Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Nobuyuki Uemura ,  Yuzaburo Ban ,  Masahiro Kume ,  Yoshihiro Hara ,  Isao Kidoguchi ,  Ayumu Tsujimura

IPC分类号： H01L21/20 ,  H01L21/205

CPC分类号： H01L21/02458 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02636 ,  H01L21/02647

摘要： On an entire surface of a substrate of sapphire having a projection with a width in the lateral direction of approximately 10 .mu.m thereon, a first semiconductor layer of Al.sub.y Ga.sub.1-y N and a second semiconductor layer of In.sub.x Ga.sub.1-x N are successively grown by MOVPE. In this manner, an island-like stacked substance including the isolated first semiconductor layer and the isolated second semiconductor layer can be formed on the top surface of the projection of the substrate.

摘要翻译： 在具有横向宽度为大约10μm的突起的蓝宝石衬底的整个表面上，通过MOVPE连续生长Al y Ga 1-y N的第一半导体层和In x Ga 1-x N的第二半导体层。 以这种方式，可以在基板的突起的顶表面上形成包括隔离的第一半导体层和隔离的第二半导体层的岛状堆叠物质。

公开(公告)号：US06518082B1

公开(公告)日：2003-02-11

申请号：US09805767

申请日：2001-03-16

申请人： Isao Kidoguchi ,  Akihiko Ishibashi ,  Masahiro Kume ,  Yuzaburo Ban ,  Satoshi Kamiyama

发明人： Isao Kidoguchi ,  Akihiko Ishibashi ,  Masahiro Kume ,  Yuzaburo Ban ,  Satoshi Kamiyama

IPC分类号： H01L2100

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L33/007 ,  H01S5/32341 ,  H01S5/34333

摘要： First, the substrate temperature is set to 1020° C., and an n-type cladding layer (14) made of n-type Al0.1Ga0.9N, an n-type optical guide layer (15) made of n-type GaN, and a flatness maintenance layer (16) made of n-type Al0.2Ga0.8N for maintaining the surface flatness of the n-type optical guide layer (15) by suppressing re-evaporation of the constituent atoms of the n-type optical guide layer (15), are grown in this order on a substrate (11) made of sapphire. Then, the supply of a group III material gas is stopped, the substrate temperature is decreased to 780° C., and the carrier gas is switched from a hydrogen gas to a nitrogen gas. Then, an active layer (17) having a multiple quantum well structure is grown by introducing NH3 as a group V source and selectively introducing TMI and TMG as a group III source.

摘要翻译： 首先，将衬底温度设定为1020℃，由n型Al 0.1 Ga 0.9 N构成的n型覆层（14），由n型GaN构成的n型光导层（15） 以及由n型Al 0.2 Ga 0.8 N制成的平面维持层（16），用于通过抑制n型光导体（15）的构成原子的再蒸发来维持n型光导层（15）的表面平坦度 引导层（15）依次生长在由蓝宝石制成的基板（11）上。 然后，停止供给III族原料气体，将基板温度降低至780℃，并将载气从氢气切换为氮气。 然后，通过引入NH 3作为V族源并选择性地引入作为III族源的TMI和TMG，生长具有多量子阱结构的活性层（17）。

公开(公告)号：US07212556B1

公开(公告)日：2007-05-01

申请号：US09504782

申请日：2000-02-15

申请人： Masahiro Kume ,  Isao Kidoguchi ,  Yuzaburo Ban ,  Ryoko Miyanaga ,  Masakatsu Suzuki

发明人： Masahiro Kume ,  Isao Kidoguchi ,  Yuzaburo Ban ,  Ryoko Miyanaga ,  Masakatsu Suzuki

IPC分类号： H01S5/00

CPC分类号： H01S5/32341 ,  B82Y20/00 ,  G11B7/123 ,  G11B7/127 ,  H01L2224/16225 ,  H01S5/005 ,  H01S5/0213 ,  H01S5/02208 ,  H01S5/02212 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/02292 ,  H01S5/0286 ,  H01S5/0683 ,  H01S5/1078 ,  H01S5/2022 ,  H01S5/2027 ,  H01S5/22 ,  H01S5/34333 ,  H01S2301/02 ,  H01S2301/173 ,  H01S2301/176 ,  H01S2304/04

摘要： A semiconductor laser device includes: a first cladding layer, which is made of a nitride semiconductor of a first conductivity type and is formed over a substrate; an active layer, which is made of another nitride semiconductor and is formed over the first cladding layer; and a second cladding layer, which is made of still another nitride semiconductor of a second conductivity type and is formed over the active layer. A spontaneous-emission-absorbing layer, which is made of yet another nitride semiconductor of the first conductivity type and has such an energy gap as absorbing spontaneous emission that has been radiated from the active layer, is formed between the substrate and the first cladding layer.

摘要翻译： 半导体激光器件包括：第一覆层，其由第一导电类型的氮化物半导体制成并形成在衬底上; 活性层，其由另一个氮化物半导体制成并形成在第一包层上; 以及第二覆层，其由另一种第二导电类型的氮化物半导体制成并形成在有源层上。 由第一导电类型的又一个氮化物半导体制成并具有从有源层辐射的吸收自发发射的能隙的自发发射吸收层形成在衬底和第一覆层之间 。

公开(公告)号：US20060239311A1

公开(公告)日：2006-10-26

申请号：US11447951

申请日：2006-06-07

申请人： Masahiro Kume ,  Isao Kidoguchi ,  Yuzaburo Ban ,  Ryoko Miyanaga ,  Masakatsu Suzuki

发明人： Masahiro Kume ,  Isao Kidoguchi ,  Yuzaburo Ban ,  Ryoko Miyanaga ,  Masakatsu Suzuki

IPC分类号： H01S3/13 ,  H01S5/00 ,  H01S3/04

CPC分类号： H01S5/32341 ,  B82Y20/00 ,  G11B7/123 ,  G11B7/127 ,  H01L2224/16225 ,  H01S5/005 ,  H01S5/0213 ,  H01S5/02208 ,  H01S5/02212 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/02292 ,  H01S5/0286 ,  H01S5/0683 ,  H01S5/1078 ,  H01S5/2022 ,  H01S5/2027 ,  H01S5/22 ,  H01S5/34333 ,  H01S2301/02 ,  H01S2301/173 ,  H01S2301/176 ,  H01S2304/04

摘要： A semiconductor laser device includes: a first cladding layer, which is made of a nitride semiconductor of a first conductivity type and is formed over a substrate; an active layer, which is made of another nitride semiconductor and is formed over the first cladding layer; and a second cladding layer, which is made of still another nitride semiconductor of a second conductivity type and is formed over the active layer. A spontaneous-emission-absorbing layer, which is made of yet another nitride semiconductor of the first conductivity type and has such an energy gap as absorbing spontaneous emission that has been radiated from the active layer, is formed between the substrate and the first cladding layer.

公开(公告)号：US07426227B2

公开(公告)日：2008-09-16

申请号：US11447951

申请日：2006-06-07

申请人： Masahiro Kume ,  Isao Kidoguchi ,  Yuzaburo Ban ,  Ryoko Miyanaga ,  Masakatsu Suzuki

发明人： Masahiro Kume ,  Isao Kidoguchi ,  Yuzaburo Ban ,  Ryoko Miyanaga ,  Masakatsu Suzuki

IPC分类号： H01S5/00

CPC分类号： H01S5/32341 ,  B82Y20/00 ,  G11B7/123 ,  G11B7/127 ,  H01L2224/16225 ,  H01S5/005 ,  H01S5/0213 ,  H01S5/02208 ,  H01S5/02212 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/02292 ,  H01S5/0286 ,  H01S5/0683 ,  H01S5/1078 ,  H01S5/2022 ,  H01S5/2027 ,  H01S5/22 ,  H01S5/34333 ,  H01S2301/02 ,  H01S2301/173 ,  H01S2301/176 ,  H01S2304/04

摘要： A semiconductor laser device includes: a first cladding layer, which is made of a nitride semiconductor of a first conductivity type and is formed over a substrate; an active layer, which is made of another nitride semiconductor and is formed over the first cladding layer; and a second cladding layer, which is made of still another nitride semiconductor of a second conductivity type and is formed over the active layer. A spontaneous-emission-absorbing layer, which is made of yet another nitride semiconductor of the first conductivity type and has such an energy gap as absorbing spontaneous emission that has been radiated from the active layer, is formed between the substrate and the first cladding layer.

摘要翻译： 半导体激光器件包括：第一覆层，其由第一导电类型的氮化物半导体制成并形成在衬底上; 活性层，其由另一个氮化物半导体制成并形成在第一包层上; 以及第二覆层，其由另一种第二导电类型的氮化物半导体制成并形成在有源层上。 由第一导电类型的又一个氮化物半导体制成并具有从有源层辐射的吸收自发发射的能隙的自发发射吸收层形成在衬底和第一覆层之间 。