公开(公告)号：US08776485B2

公开(公告)日：2014-07-15

申请号：US13365091

申请日：2012-02-02

申请人： Satoshi Nishitsuji ,  Fumitaka Tokuda ,  Shinji Takeichi ,  Toshikazu Shimada ,  Toshiharu Kageyama ,  Toshikazu Shotsu

发明人： Satoshi Nishitsuji ,  Fumitaka Tokuda ,  Shinji Takeichi ,  Toshikazu Shimada ,  Toshiharu Kageyama ,  Toshikazu Shotsu

IPC分类号： B65B9/06

CPC分类号： B65B31/045 ,  B65B9/22 ,  B65B37/18 ,  B65B39/005 ,  B65B51/306 ,  B65B57/04

摘要： A form-fill-seal machine is capable of reducing poor sealing caused by a packaged article catching in lateral seal portions. The form-fill-seal machine is provided with an upper tube, a lower tube disposed therebelow, a former, a lateral sealing mechanism below the lower tube, and opening and closing sliding members. A packaged article is dropped through the interiors of the upper tube and the lower tube. The former winds a sheet of a film F around the circumference of the lower tube to convert same into a tubular film. The lateral sealing mechanism laterally seals the tubular film. The opening and closing sliding members, which are disposed between the upper tube and the lower tube, shut off an upwardly oriented flow of gas from the interior of the lower tube when in a closed state.

摘要翻译： 成型填充密封机能够减少由封闭物品捕获在侧向密封部分中引起的不良密封。 成型填充密封机设有上管，下管，下管，前成型机，下管下侧的横向密封机构，以及开闭滑动部件。 包装物品通过上管和下管的内部落下。 前者绕着下管的圆周缠绕一片薄膜F，以将其转换为管状薄膜。 横向密封机构横向密封管状膜。 设置在上管和下管之间的开闭滑动构件在处于关闭状态时，从下管的内部切断向上取向的气体流。

公开(公告)号：US4885614A

公开(公告)日：1989-12-05

申请号：US216522

申请日：1988-07-08

申请人： Seijiro Furukawa ,  Hiroyuki Etoh ,  Akitoshi Ishizaka ,  Toshikazu Shimada

发明人： Seijiro Furukawa ,  Hiroyuki Etoh ,  Akitoshi Ishizaka ,  Toshikazu Shimada

IPC分类号： H01L21/20 ,  H01L21/203 ,  H01L21/205 ,  H01L21/26 ,  H01L29/165 ,  H01L29/737 ,  H01L29/778 ,  H01L31/0312 ,  H01L31/105 ,  H01L31/18

CPC分类号： H01L31/1812 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/165 ,  H01L29/7378 ,  H01L29/7781 ,  H01L31/0312 ,  H01L31/105 ,  Y02E10/50

摘要： The present invention discloses a semiconductor device comprising a semiconductor layer being made of monocrystalline silicon or silicon-germanium alloy and a semiconductor layer being made of silicon-germanium-carbon alloy formed thereon, wherein the two layers form a heterojunction therebetween. In such a device, no lattice mismatch occurs between the layers or even if lattice mismatch occurs, it is only slight, so that the silicon-germanium-carbon alloy layer is in no danger of causing misfit dislocation therein.

摘要翻译： 本发明公开了一种半导体器件，其包括由单晶硅或硅 - 锗合金制成的半导体层和由其上形成的硅 - 锗 - 碳合金制成的半导体层，其中两层在其间形成异质结。 在这种器件中，层之间不发生晶格失配，或者即使发生晶格失配，仅仅是微小的，所以硅 - 锗 - 碳合金层不会引起其中的失配位错的危险。

公开(公告)号：US4337443A

公开(公告)日：1982-06-29

申请号：US124266

申请日：1980-02-25

申请人： Jun-ichi Umeda ,  Toshikazu Shimada ,  Michiharu Nakamura ,  Yoshifumi Katayama ,  Takashi Kajimura ,  Shigeo Yamashita

发明人： Jun-ichi Umeda ,  Toshikazu Shimada ,  Michiharu Nakamura ,  Yoshifumi Katayama ,  Takashi Kajimura ,  Shigeo Yamashita

IPC分类号： H01S5/00 ,  H01S5/028 ,  H01S3/19

CPC分类号： H01S5/028 ,  H01S5/0282 ,  H01S5/0283

摘要： A semiconductor laser element is disclosed which includes a film of an amorphous material deposited on at least an optical output facet of the laser element and contains silicon and hydrogen as the indispensable components. The thickness of the amorphous film is preferably selected in the vicinity of (.lambda./4).multidot.m where .lambda. represents wavelength of laser light in the amorphous film and m represents an odd integer. A film of a transparent insulation material can be deposited over the amorphous film thereby to constitute a composite film. With the disclosed structure of the semiconductor laser element, increasement in a threshold current of the laser element can be suppressed to a minimum, while a maximum optical output power can be increased.

摘要翻译： 公开了一种半导体激光元件，其包括沉积在激光元件的至少光学输出面上的非晶材料的膜，并且包含硅和氢作为不可缺少的成分。 优选在（λ/ 4）×m附近选择非晶膜的厚度，其中λ表示非晶膜中的激光的波长，m表示奇整数。 可以将非透明绝缘材料的膜沉积在非晶膜上，从而构成复合膜。 利用所公开的半导体激光元件的结构，可以将激光元件的阈值电流的增加抑制到最小，同时可以提高最大光输出功率。

公开(公告)号：US07053422B2

公开(公告)日：2006-05-30

申请号：US10490660

申请日：2002-09-30

申请人： Masahiko Ando ,  Toshikazu Shimada ,  Masatoshi Shiiki ,  Shunri Oda ,  Nobuyoshi Koshida

发明人： Masahiko Ando ,  Toshikazu Shimada ,  Masatoshi Shiiki ,  Shunri Oda ,  Nobuyoshi Koshida

IPC分类号： H01L33/00

CPC分类号： H05B33/145 ,  H05B33/10 ,  H05B33/22

摘要： The present invention provides a solid state light-emissive display apparatus of high brightness and efficiency, high reliability, and of thin type, and method of manufacturing the same at low cost.Said apparatus has the luminous thin film made up by laminating or mixing crystal fine particle coated with insulator (5) of nm size and fluorescent fine particles (7) of nm size, and the lower electrode and the transparent upper electrode sandwiching said luminous thin film, wherein the electrons injected from said lower electrode are accelerated in the crystal fine particle coated with insulator layer (6) not being scattered by phonons to become high energy ballistic electrons, and form excitons (13) by colliding excitation of fluorescent fine particles. Since said fluorescent fine particles are of nm size, the exciton concentration is high, and luminescence intensity by extinction of excitons is also high.

摘要翻译： 本发明提供一种高亮度，高效率，高可靠性，薄型的固态发光显示装置及其制造方法。 所述装置具有通过层叠或混合涂覆有nm尺寸的绝缘体（5）和nm尺寸的荧光细颗粒（7）的结晶微粒组成的发光薄膜，并且下电极和透明上电极夹着所述发光薄膜 其特征在于，从所述下部电极注入的电子在不被声子散射的绝缘体层（6）的结晶细小颗粒中被加速，成为高能量的弹道电子，并通过荧光细粒子的激发而形成激子（13）。 由于所述荧光细粒子为nm大小，所以激子浓度高，激子的消光发光强度也高。

公开(公告)号：US06211531B1

公开(公告)日：2001-04-03

申请号：US09492171

申请日：2000-01-27

申请人： Kazuo Nakazato ,  Kiyoo Itoh ,  Hiroshi Mizuta ,  Toshikazu Shimada ,  Hideo Sunami ,  Tatsuya Teshima ,  Toshiyuki Mine ,  Ken Yamaguchi

发明人： Kazuo Nakazato ,  Kiyoo Itoh ,  Hiroshi Mizuta ,  Toshikazu Shimada ,  Hideo Sunami ,  Tatsuya Teshima ,  Toshiyuki Mine ,  Ken Yamaguchi

IPC分类号： H01L2906

CPC分类号： H01L27/10858 ,  B82Y10/00 ,  G11C11/16 ,  H01L21/28273 ,  H01L27/10808 ,  H01L27/1082 ,  H01L27/10873 ,  H01L27/10876 ,  H01L27/11 ,  H01L29/154 ,  H01L29/42324 ,  H01L29/66825 ,  H01L29/772 ,  H01L29/78609 ,  H01L29/78618 ,  H01L29/78642 ,  H01L29/78687 ,  H01L29/7881 ,  H01L29/882

摘要： A controllable conduction device in the form of a transistor comprises source and drain regions 5, 2 between which extends a conduction path P for charge carriers, a gate 4 for controlling charge carrier flow along the conduction path and a multiple layer structure 3 providing a multiple tunnel junction configuration in the conduction path, with the result that current leakage is blocked by the multiple tunnel junction configuration when the transistor is in its off state. Vertical and lateral transistor configurations are described, together with use of the transistor in complimentary pairs and for a random access memory cell. Improved gate structures are described which are also applicable to memory devices that incorporate the tunnel barrier configuration to store charge on the memory node.

摘要翻译： 晶体管形式的可控导电器件包括源极和漏极区域5，其间延伸用于电荷载流子的导电路径P，用于控制沿导电路径的电荷载流子的栅极4和提供多个 导通路径中的隧道结结构，结果当晶体管处于其截止状态时，漏电流被多重隧道结构造阻塞。 描述了垂直和横向晶体管配置，以及使用晶体管的互补对和随机存取存储器单元。 描述了改进的栅极结构，其也适用于结合隧道势垒配置以在存储器节点上存储电荷的存储器件。

公开(公告)号：US5521390A

公开(公告)日：1996-05-28

申请号：US341949

申请日：1994-11-16

申请人： Toshihiko Sato ,  Masakazu Ichikawa ,  Toshikazu Shimada

发明人： Toshihiko Sato ,  Masakazu Ichikawa ,  Toshikazu Shimada

IPC分类号： G02F1/39 ,  G01B11/14 ,  G01Q90/00 ,  G12B1/00 ,  H01J37/20

CPC分类号： G01Q10/04 ,  B82Y35/00 ,  G12B1/00 ,  H01J37/20 ,  Y10S977/868

摘要： An optical nanodisplacement producing apparatus is realized by employing an optical parametric oscillator of which cavity length is varied in correspondence with a wavelength or the intensity of the output light signal to achieve a fine-displacement producing mechanism. An optical nanodisplacement producing apparatus having high resolution less than 0.1 nm and a highly stable characteristic is realized as a very fine pattern forming/monitoring apparatus.

摘要翻译： 通过采用光学参数振荡器来实现光学纳米位置产生装置，其中腔长度与输出光信号的波长或强度相对应地变化，以实现精细位移产生机制。 作为非常精细的图案形成/监视装置，实现了具有小于0.1nm的高分辨率和高度稳定特性的光学纳米置换产生装置。

公开(公告)号：US4642412A

公开(公告)日：1987-02-10

申请号：US759961

申请日：1985-07-29

申请人： Shinichi Muramatsu ,  Toshikazu Shimada ,  Sunao Matsubara ,  Haruo Itoh ,  Nobuo Nakamura

发明人： Shinichi Muramatsu ,  Toshikazu Shimada ,  Sunao Matsubara ,  Haruo Itoh ,  Nobuo Nakamura

IPC分类号： H01L31/04 ,  H01L31/042 ,  H01L25/02 ,  H01L27/14

CPC分类号： H01L31/02024 ,  Y10S136/291

摘要： A plurality of photovoltaic devices (e.g., solar cells) connect with each other and form a photo-electric conversion apparatus. The photovoltaic devices concerned are so connected with each other that when a given pattern of light is irradiated upon the photo-electric conversion apparatus concerned, the electrical output generated when the whole of it is irradiated is smaller than that generated when some parts of it are irradiated. Since an electronic system equipped with this apparatus as a power supply can be designed to work when the apparatus is irradiated with such a pattern of light that irradiates only a part of the apparatus, an electronic system having such an identifying faculty can be made easily.Further, an apparatus like this type may be made by connecting the elements of this apparatus in series or in reverse direction to form units, and by connecting this plurality of units in series and/or in parallel.

摘要翻译： 多个光电器件（例如，太阳能电池）彼此连接并形成光电转换设备。 所涉及的光电器件彼此连接，当给定的光模式照射到所涉及的光电转换装置时，当其整个照射时产生的电输出小于其一些部分产生的电输出 照射。 由于配备有该设备作为电源的电子系统可以被设计成当用仅照射设备的一部分的这种模式照射设备时工作，可以容易地制造具有这样的识别人员的电子系统。 此外，这种类型的装置可以通过将该装置的元件串联或反向连接来形成单元，并且通过串联和/或并联连接多个单元来进行。

公开(公告)号：US07306990B2

公开(公告)日：2007-12-11

申请号：US10535941

申请日：2003-11-28

申请人： Shinya Yamaguchi ,  Masahiko Ando ,  Toshikazu Shimada ,  Natsuki Yokoyama ,  Shunri Oda ,  Nobuyoshi Koshida

发明人： Shinya Yamaguchi ,  Masahiko Ando ,  Toshikazu Shimada ,  Natsuki Yokoyama ,  Shunri Oda ,  Nobuyoshi Koshida

IPC分类号： H01L21/336 ,  H01L21/00 ,  H01L29/788 ,  H01L21/3205 ,  H01L21/4763 ,  H01L29/76

CPC分类号： H01L29/7881 ,  G11C23/00

摘要： An information memory device capable of reading and writing of information by mechanical operation of a floating gate layer, in which a gate insulation film has a cavity (6), and a floating gate layer (5) having two stable deflection states in the cavity (6), the state stabilized by deflecting toward the channel side of transistor, and the state stabilized by deflecting toward the gate (7) side, writing and reading of information can be made by changing the stable deflection state of the floating gate layer (5) by Coulomb interactive force between the electrons (or positive holes 8) accumulated in the floating gate layer (5) and external electric field, and by reading the channel current change based on the state of the floating gate layer (5).

摘要翻译： 一种能够通过机械操作读取和写入信息的信息存储装置，其中栅极绝缘膜具有空腔（6）和在空腔中具有两个稳定偏转状态的浮动栅层（​​5） 6），通过偏转晶体管的沟道侧稳定状态，并且通过偏向栅极（7）而稳定的状态，可以通过改变浮动栅极层（5）的稳定偏转状态来进行信息的写入和读取 ）通过积存在浮动栅极层（5）中的电子（或正空穴8）与外部电场之间的库仑相互作用力，并且基于浮动栅极层（5）的状态读取沟道电流变化。

公开(公告)号：US06825527B2

公开(公告)日：2004-11-30

申请号：US10454527

申请日：2003-06-05

申请人： Hideo Sunami ,  Kiyoo Itoh ,  Toshikazu Shimada ,  Kazuo Nakazato ,  Hiroshi Mizuta

发明人： Hideo Sunami ,  Kiyoo Itoh ,  Toshikazu Shimada ,  Kazuo Nakazato ,  Hiroshi Mizuta

IPC分类号： H01L2972

CPC分类号： B82Y10/00 ,  G11C16/02 ,  H01L27/108 ,  H01L29/511 ,  H01L29/772 ,  H01L29/785 ,  H01L29/78642 ,  H01L29/7883 ,  H01L29/7888

摘要： A high speed/large capacity DRAM (Dynamic Random Access Memory) is generally refreshed each 0.1 sec because it loses information stored therein due to a leakage current. The DRAM also loses information stored therein upon cutoff of a power source. Meanwhile, a nonvolatile ROM (Read-only Memory) cannot be configured as a high speed/large capacity memory. A semiconductor memory device of the present invention realizes nonvolatile characteristic by shielding a drain functioning as a memory node from a leakage current by a tunnel insulator, and also realizes stable and high speed operation by adding a transistor for reading to a memory cell.

摘要翻译： 通常由于漏电流而丢失存储在其中的信息，所以每0.1秒钟通常刷新高速/大容量DRAM（动态随机存取存储器）。 在断电时，DRAM也会丢失存储在其中的信息。 同时，非易失性ROM（只读存储器）不能被配置为高速/大容量存储器。本发明的半导体存储器件通过屏蔽用作存储器节点的漏极与隧道的泄漏电流来实现非易失性特性 绝缘体，并且通过将用于读取的晶体管添加到存储单元来实现稳定和高速操作。

公开(公告)号：US06642574B2

公开(公告)日：2003-11-04

申请号：US09727497

申请日：2000-12-04

申请人： Hideo Sunami ,  Kiyoo Itoh ,  Toshikazu Shimada ,  Kazuo Nakazato ,  Hiroshi Mizuta

发明人： Hideo Sunami ,  Kiyoo Itoh ,  Toshikazu Shimada ,  Kazuo Nakazato ,  Hiroshi Mizuta

IPC分类号： H01L2972

CPC分类号： B82Y10/00 ,  G11C16/02 ,  H01L27/108 ,  H01L29/511 ,  H01L29/772 ,  H01L29/785 ,  H01L29/78642 ,  H01L29/7883 ,  H01L29/7888

摘要： A high speed/large capacity DRAM (Dynamic Random Access Memory) is generally refreshed each 0.1 sec because it loses information stored therein due to a leakage current. The DRAM also loses information stored therein upon cutoff of a power source. Meanwhile, a nonvolatile ROM (Read-only Memory) cannot be configured as a high speed/large capacity memory. A semiconductor memory device of the present invention realizes nonvolatile characteristic by shielding a drain functioning as a memory node from a leakage current by a tunnel insulator, and also realizes stable and high speed operation by adding a transistor for reading to a memory cell.

摘要翻译： 通常由于漏电流而丢失存储在其中的信息，所以每0.1秒钟通常刷新高速/大容量DRAM（动态随机存取存储器）。 在断电时，DRAM也会丢失存储在其中的信息。 同时，非易失性ROM（只读存储器）不能被配置为高速/大容量存储器。本发明的半导体存储器件通过屏蔽用作存储器节点的漏极与隧道的泄漏电流来实现非易失性特性 绝缘体，并且通过将用于读取的晶体管添加到存储单元来实现稳定和高速操作。