Power semiconductor device
    2.
    发明授权
    Power semiconductor device 有权
    功率半导体器件

    公开(公告)号:US08610261B2

    公开(公告)日:2013-12-17

    申请号:US12582246

    申请日:2009-10-20

    IPC分类号: H01L23/48

    摘要: A power semiconductor device includes a power semiconductor module having cylindrical conductors which are joined to a wiring pattern so as to be substantially perpendicular to the wiring pattern and whose openings are exposed at a surface of transfer molding resin, and an insert case having a ceiling portion and peripheral walls, the ceiling portion being provided with external terminals that are fitted into, and passed through, the ceiling portion, the external terminals having outer-surface-side connecting portions at the outer surface side of the ceiling portion and inner-surface-side connecting portions at the inner surface side of the ceiling portion. The power semiconductor module is set within the insert case such that the inner-surface-side connecting portions of the external terminals are inserted into the cylindrical conductors.

    摘要翻译: 功率半导体器件包括功率半导体模块,该功率半导体模块具有圆柱形导体,其连接到布线图案,以便基本上垂直于布线图案,并且其开口在传输模塑树脂的表面处露出;以及插入壳体,其具有顶部 以及周壁,所述顶部设置有外部端子,所述外部端子嵌入并通过所述顶部,所述外部端子在所述顶部的外表面侧具有外表面侧连接部, 在顶棚部分的内表面侧的侧连接部分。 功率半导体模块设置在插入壳体内,使得外部端子的内表面侧连接部分插入圆柱形导体中。