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    Process for the Preparation of Glycidyl Derivatives
    1.
    发明申请
    Process for the Preparation of Glycidyl Derivatives 失效
    缩水甘油基衍生物的制备方法

    公开(公告)号：US20070265458A1

    公开(公告)日：2007-11-15

    申请号：US11660491

    申请日：2004-08-19

    申请人： Seong-Jin Kim ,  Ho-Seong Lee ,  Jin-Won Yun ,  Ho-Cheol Kim

    发明人： Seong-Jin Kim ,  Ho-Seong Lee ,  Jin-Won Yun ,  Ho-Cheol Kim

    IPC分类号： C07D303/16

    CPC分类号： C07D303/16

    摘要： There is provided a process for preparing a glycidyl derivative from 3-chloro-1,2-propanediol, comprising i) adding a phosphate salt to a solution into which 3-chloro-1,2-propanediol is dissolved into a solvent to produce glycidol, and ii) adding to the solution of step i) a base capable of releasing a glycidyl group from the glycidol and a substrate susceptible to nucleophilic attack to produce the desired glycidyl derivative by nucleophilic attack of the glycidyl group to the substrate.

    摘要翻译： 提供了由3-氯-1,2-丙二醇制备缩水甘油基衍生物的方法，其包括：i）将磷酸盐加入溶于溶剂中的3-氯-1,2-丙二醇溶液中以产生缩水甘油 ，和ii）向步骤i）的溶液中加入能够从缩水甘油中释放缩水甘油基的碱和易受亲核攻击的底物，以通过缩水甘油基的亲核攻击产生所需的缩水甘油基衍生物。

    Process for the preparation of glycidyl derivatives
    2.
    发明授权
    Process for the preparation of glycidyl derivatives 失效
    缩水甘油基衍生物的制备方法

    公开(公告)号：US07459572B2

    公开(公告)日：2008-12-02

    申请号：US11660491

    申请日：2004-08-19

    申请人： Seong-Jin Kim ,  Ho-Seong Lee ,  Jin-Won Yun ,  Ho-Cheol Kim

    发明人： Seong-Jin Kim ,  Ho-Seong Lee ,  Jin-Won Yun ,  Ho-Cheol Kim

    IPC分类号： C07D301/26

    CPC分类号： C07D303/16

    摘要： There is provided a process for preparing a glycidyl derivative from 3-chloro-1,2-propanediol, comprising i) adding a phosphate salt to a solution into which 3-chloro-1,2-propanediol is dissolved into a solvent to produce glycidol, and ii) adding to the solution of step i) a base capable of releasing a glycidyl group from the glycidol and a substrate susceptible to nucleophilic attack to produce the desired glycidyl derivative by nucleophilic attack of the glycidyl group to the substrate.

    摘要翻译： 提供了由3-氯-1,2-丙二醇制备缩水甘油基衍生物的方法，其包括：i）将磷酸盐加入溶于溶剂中的3-氯-1,2-丙二醇溶液中以产生缩水甘油 ，和ii）向步骤i）的溶液中加入能够从缩水甘油中释放缩水甘油基的碱和易受亲核攻击的底物，以通过缩水甘油基的亲核攻击产生所需的缩水甘油基衍生物。

    Two-dimensional patterning employing self-assembled material
    6.
    发明授权
    Two-dimensional patterning employing self-assembled material 失效
    采用自组装材料的二维图案

    公开(公告)号：US08754400B2

    公开(公告)日：2014-06-17

    申请号：US13432036

    申请日：2012-03-28

    申请人： Timothy J. Dalton ,  Bruce B. Doris ,  Ho-Cheol Kim ,  Carl J. Radens

    发明人： Timothy J. Dalton ,  Bruce B. Doris ,  Ho-Cheol Kim ,  Carl J. Radens

    IPC分类号： H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

    CPC分类号： H01L21/0337 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/0338 ,  Y10T428/24612

    摘要： A first nanoscale self-aligned self-assembled nested line structure having a sublithographic width and a sublithographic spacing and running along a first direction is formed from first self-assembling block copolymers within a first layer. The first layer is filled with a filler material and a second layer is deposited above the first layer containing the first nanoscale nested line structure. A second nanoscale self-aligned self-assembled nested line structure having a sublithographic width and a sublithographic spacing and running in a second direction is formed from second self-assembling block copolymers within the second layer. The composite pattern of the first nanoscale nested line structure and the second nanoscale nested line structure is transferred into an underlayer beneath the first layer to form an array of structures containing periodicity in two directions.

    摘要翻译： 具有亚光刻宽度和亚光刻距离并沿着第一方向延伸的第一纳米级自对准自组装嵌套线结构由第一层内的第一自组装嵌段共聚物形成。 第一层填充有填充材料，并且第二层沉积在包含第一纳米级嵌套线结构的第一层之上。 具有亚光刻宽度和亚光刻距离并沿第二方向运行的第二纳米级自对准自组装嵌套线结构由第二层内的第二自组装嵌段共聚物形成。 第一纳米级嵌套线结构和第二纳米级嵌套线结构的复合图案被转移到第一层下面的底层中以形成在两个方向上包含周期性的结构阵列。

    Methods of directed self-assembly, and layered structures formed therefrom
    8.
    发明授权
    Methods of directed self-assembly, and layered structures formed therefrom 有权
    定向自组装的方法和由其形成的分层结构

    公开(公告)号：US08623458B2

    公开(公告)日：2014-01-07

    申请号：US12642018

    申请日：2009-12-18

    申请人： Joy Cheng ,  Matthew E. Colburn ,  Stefan Harrer ,  William D. Hinsberg ,  Steven J. Holmes ,  Ho-Cheol Kim ,  Daniel Paul Sanders

    发明人： Joy Cheng ,  Matthew E. Colburn ,  Stefan Harrer ,  William D. Hinsberg ,  Steven J. Holmes ,  Ho-Cheol Kim ,  Daniel Paul Sanders

    IPC分类号： B81C1/00 ,  C08J5/18 ,  C08J5/00

    CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

    摘要： A layered structure comprising a self-assembled material is formed by a method that includes forming a photochemically, thermally and/or chemically treated patterned photoresist layer disposed on a first surface of a substrate. The treated patterned photoresist layer comprises a non-crosslinked treated photoresist. An orientation control material is cast on the treated patterned photoresist layer, forming a layer containing orientation control material bound to a second surface of the substrate. The treated photoresist and, optionally, any non-bound orientation control material are removed by a development process, resulting in a pre-pattern for self-assembly. A material capable of self-assembly is cast on the pre-pattern. The casted material is allowed to self-assemble with optional heating and/or annealing to produce the layered structure.

    摘要翻译： 包括自组装材料的层状结构通过包括形成设置在衬底的第一表面上的光化学，热和/或化学处理的图案化光致抗蚀剂层的方法形成。 经处理的图案化光刻胶层包括非交联处理的光致抗蚀剂。 将取向控制材料浇铸在经处理的图案化的光致抗蚀剂层上，形成包含与基材的第二表面结合的取向控制材料的层。 经处理的光致抗蚀剂和任选的任何未结合的取向控制材料通过显影过程被去除，从而形成用于自组装的预图案。 能够自组装的材料在预制图案上铸造。 允许铸造材料通过任选的加热和/或退火自组装以产生分层结构。

    Methods for forming surface features using self-assembling masks
    9.
    发明授权
    Methods for forming surface features using self-assembling masks 有权
    使用自组装掩模形成表面特征的方法

    公开(公告)号：US08529779B2

    公开(公告)日：2013-09-10

    申请号：US12057565

    申请日：2008-03-28

    申请人： Joy Cheng ,  Mark W. Hart ,  Hiroshi Ito ,  Ho-Cheol Kim ,  Robert Miller

    发明人： Joy Cheng ,  Mark W. Hart ,  Hiroshi Ito ,  Ho-Cheol Kim ,  Robert Miller

    IPC分类号： B31D3/00 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/302

    CPC分类号： H01L21/0337 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  H01L21/0271 ,  H01L21/0332

    摘要： A method for producing surface features and an etch masking method. A combination is provided of a block copolymer and additional material. The block copolymer includes a first block of a first polymer covalently bonded to a second block of a second polymer. The additional material is miscible with the first polymer. A film is formed of the combination directly onto a surface of a first layer. Nanostructures of the additional material self-assemble within the first polymer block. The film of the combination and the first layer are etched. The nanostructures have an etch rate lower than an etch rate of the block copolymer and lower than an etch rate of the first layer. The film is removed and features remain on the surface of the first layer. Also included is an etch masking method where the nanostructures mask portions of the first layer from said etchant.

    摘要翻译： 一种用于产生表面特征的方法和蚀刻掩模方法。 提供了一种嵌段共聚物和另外的材料的组合。 嵌段共聚物包括共价键合到第二聚合物的第二嵌段的第一聚合物的第一嵌段。 附加材料与第一聚合物混溶。 膜由直接形成在第一层的表面上。 附加材料的纳米结构在第一聚合物嵌段内自组装。 蚀刻组合和第一层的膜。 纳米结构的蚀刻速率低于嵌段共聚物的蚀刻速率，并且低于第一层的蚀刻速率。 去除膜并且特征保留在第一层的表面上。 还包括蚀刻掩模法，其中纳米结构掩盖了来自所述蚀刻剂的第一层的部分。