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    Energy systems and energy supply methods
    2.
    发明授权
    Energy systems and energy supply methods 有权
    能源系统和能源供应方式

    公开(公告)号：US09525285B2

    公开(公告)日：2016-12-20

    申请号：US13495935

    申请日：2012-06-13

    申请人： Shane Johnson ,  Allan Coxon ,  Ian Walker

    发明人： Shane Johnson ,  Allan Coxon ,  Ian Walker

    IPC分类号： H02J4/00 ,  H02J3/36 ,  H02J3/38

    CPC分类号： H02J7/0068 ,  H02J3/36 ,  H02J3/383 ,  H02J3/386 ,  H02J4/00 ,  H02J7/007 ,  H02J7/34 ,  Y02E10/563 ,  Y02E10/763 ,  Y02E60/60 ,  Y10T307/391

    摘要： Energy systems and energy supply methods are described. In one aspect, an energy system includes a bus system configured to conduct electrical energy, a plurality of input adapters electrically coupled with the bus system and configured to electrically couple with a plurality of respective source entities which are individually configured to provide electrical energy, a plurality of output adapters electrically coupled with the bus system and configured to electrically couple with a plurality of respective consuming entities which are individually configured to consume electrical energy, and control circuitry configured to control individual ones of the input adapters to provide electrical energy from respective ones of the source entities to the bus system and to control individual ones of the output adapters to provide electrical energy from the bus system to respective ones of the consuming entities.

    摘要翻译： 描述了能源系统和能量供应方法。 在一个方面，能量系统包括被配置为传导电能的总线系统，与总线系统电耦合的多个输入适配器，并被配置为与单独配置成提供电能的多个相应的源实体电耦合， 多个输出适配器与总线系统电耦合并且被配置为与单独配置为消耗电能的多个相应的消耗实体电耦合;以及控制电路，其被配置为控制各个输入适配器以从相应的电源提供电能 的源实体到总线系统并且控制输出适配器中的各个以将总线系统的电能提供给相应的消耗实体。

    Energy Systems And Energy Supply Methods
    3.
    发明申请
    Energy Systems And Energy Supply Methods 有权
    能源系统与能源供应方式

    公开(公告)号：US20130147272A1

    公开(公告)日：2013-06-13

    申请号：US13495935

    申请日：2012-06-13

    申请人： Shane Johnson ,  Allan Coxon ,  Ian Walker

    发明人： Shane Johnson ,  Allan Coxon ,  Ian Walker

    IPC分类号： H02J4/00

    CPC分类号： H02J7/0068 ,  H02J3/36 ,  H02J3/383 ,  H02J3/386 ,  H02J4/00 ,  H02J7/007 ,  H02J7/34 ,  Y02E10/563 ,  Y02E10/763 ,  Y02E60/60 ,  Y10T307/391

    摘要： Energy systems and energy supply methods are described. In one aspect, an energy system includes a bus system configured to conduct electrical energy, a plurality of input adapters electrically coupled with the bus system and configured to electrically couple with a plurality of respective source entities which are individually configured to provide electrical energy, a plurality of output adapters electrically coupled with the bus system and configured to electrically couple with a plurality of respective consuming entities which are individually configured to consume electrical energy, and control circuitry configured to control individual ones of the input adapters to provide electrical energy from respective ones of the source entities to the bus system and to control individual ones of the output adapters to provide electrical energy from the bus system to respective ones of the consuming entities.

    摘要翻译： 描述了能源系统和能量供应方法。 在一个方面，能量系统包括被配置为传导电能的总线系统，与总线系统电耦合的多个输入适配器，并被配置为与单独配置成提供电能的多个相应的源实体电耦合， 多个输出适配器与总线系统电耦合并且被配置为与单独配置为消耗电能的多个相应的消耗实体电耦合;以及控制电路，其被配置为控制各个输入适配器以从相应的电源提供电能 的源实体到总线系统并且控制输出适配器中的各个以将总线系统的电能提供给相应的消耗实体。

    High Power Vcsels With Transverse Mode Control
    5.
    发明申请
    High Power Vcsels With Transverse Mode Control 审中-公开
    具有横向模式控制的大功率Vcsel

    公开(公告)号：US20070242716A1

    公开(公告)日：2007-10-18

    申请号：US10592999

    申请日：2005-03-21

    申请人： Nigamananda Samal ,  Shane Johnson ,  Yong-Hang Zhang

    发明人： Nigamananda Samal ,  Shane Johnson ,  Yong-Hang Zhang

    IPC分类号： H01S5/183

    CPC分类号： H01S5/1833 ,  H01S5/0207 ,  H01S5/02469 ,  H01S5/18311 ,  H01S5/18313 ,  H01S2301/166 ,  H01S2301/20

    摘要： A single mode high power laser device such as a VCSEL is formed with two oxide apertures, one on each side of the active region or cavity. The sizes of the apertures and the distances from the apertures to the cavity center are chosen or optimum, near-Gaussian current density distribution. The high power of a VCSEL thus formed is improved still more by good heat removal by either formation of a via through the substrate and gold plating on top and bottom of the VCSEL (including the via) or by lifting the VCSEL structure from the substrate and locating it on a heat sink.

    摘要翻译： 诸如VCSEL的单模高功率激光器件形成有两个氧化物孔，一个在有源区或空腔的每一侧上。 选择孔径的尺寸以及从孔到腔中心的距离或最佳的近似高斯电流密度分布。 通过在VCSEL（包括通孔）的顶部和底部形成通孔以及通过衬底的顶部和底部的金镀层或者通过从衬底提升VCSEL结构，通过良好的散热来改善如此形成的VCSEL的高功率，以及 将其放在散热器上。

    Long wavelength pseudomorphic InGaNPAsSb type-I and type-II active layers for the gaas material system
    8.
    发明授权
    Long wavelength pseudomorphic InGaNPAsSb type-I and type-II active layers for the gaas material system 失效
    用于Gaas材料系统的长波长伪晶InGaNPAsSb型-I和II型活性层

    公开(公告)号：US06859474B1

    公开(公告)日：2005-02-22

    申请号：US10129061

    申请日：2000-11-01

    申请人： Shane Johnson ,  Philip Dowd ,  Wolfgang Braun ,  Yong-Hang Zhang ,  Chang-Zhi Guo

    发明人： Shane Johnson ,  Philip Dowd ,  Wolfgang Braun ,  Yong-Hang Zhang ,  Chang-Zhi Guo

    IPC分类号： H01L29/06 ,  H01L31/0304 ,  H01L31/0352 ,  H01L33/00 ,  H01S5/00 ,  H01S5/183 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343

    CPC分类号： B82Y20/00 ,  B82Y10/00 ,  H01L31/03046 ,  H01L31/035236 ,  H01S5/183 ,  H01S5/32366 ,  H01S5/3403 ,  H01S5/3406 ,  H01S5/3422 ,  H01S5/34306 ,  H01S5/3434 ,  Y02B10/10 ,  Y02E10/544

    摘要： The invention discloses improved structures of light-processing (e.g. light-emitting and light-absorbing/sensing) devices, in particular Vertical Cavity Surface Emitting Lasers (VCSELs), such as may find use in telecommunications applications. The disclosed VSCAL devices and production methods provide for an active region having a quantum well structure grown on GaAs-containing substrates, thus providing processing compatibility for light having wavelength in the range 1.0 to 1.6 μm. The active region structure combines strain-compensating barriers with different band alignments in the quantum wells to achieve a long emission wavelength while at the same time decreasing the strain in the structure. The improved functioning of the devices disclosed results from building them with multicomponent alloy layers having a large number of constituents. The invention discloses as a key constituent in the proposed alloy layers for the active region a substance, such as nitrogen (N), suitable for reducing bandgap energy (i.e., increasing light wavelength) associated with the layers while at the same time lowering the lattice constant associated with the structure and hence lowering strain.

    摘要翻译： 本发明公开了光处理（例如发光和光吸收/感测）装置，特别是垂直腔面发射激光器（VCSEL）的改进的结构，例如可用于电信应用。 所公开的VSCAL器件和制造方法提供了在含GaAs衬底上生长的量子阱结构的有源区，从而为波长为1.0-1.6μm的光提供处理兼容性。 有源区结构将应变补偿屏障与量子阱中的不同带对准结合在一起，以实现长发射波长，同时降低结构中的应变。 所公开的装置的改进的功能通过用具有大量成分的多组分合金层来构建它们。 本发明公开了所提出的合金层中关键成分的一种物质，如氮（N），适用于降低与层相关的带隙能（即增加光波长），同时降低晶格 常数与结构相关，从而降低应变。

    DEVICES, SYSTEMS AND METHODS UTILIZING AN IMPROVED OPTICAL ABSORPTION MODEL FOR DIRECT-GAP SEMICONDUCTORS
    9.
    发明申请
    DEVICES, SYSTEMS AND METHODS UTILIZING AN IMPROVED OPTICAL ABSORPTION MODEL FOR DIRECT-GAP SEMICONDUCTORS 有权

    公开(公告)号：US20210055210A1

    公开(公告)日：2021-02-25

    申请号：US16999975

    申请日：2020-08-21

    申请人： Shane Johnson ,  Stephen Schaefer ,  Shang Gao

    发明人： Shane Johnson ,  Stephen Schaefer ,  Shang Gao

    IPC分类号： G01N21/31 ,  G01K11/00 ,  G06F17/18 ,  G06F17/17

    摘要： A method for determining a characteristic of a direct-gap semiconductor comprises measuring at least one optical constant of a first sample of a direct-gap semiconductor with an optical spectrometer, calculating an estimated value of an optical parameter of the first sample of the direct-gap semiconductor based on fitting the model αg(ln(1+e(hν-Eg)/(pEu))/ln(2))p to an optical absorption curve based on the at least one optical constant, obtaining at least one second value of the optical parameter, and calculating an estimated characteristic of the direct-gap semiconductor from the estimated value of the optical parameter and the obtained second value of the optical parameter. A method for determining a temperature of a direct-gap semiconductor and a system for determining a characteristic of a direct-gap semiconductor are also disclosed.

    Multi-purpose tool
    10.
    发明申请
    Multi-purpose tool 失效
    多功能工具

    公开(公告)号：US20050015885A1

    公开(公告)日：2005-01-27

    申请号：US10894113

    申请日：2004-07-19

    申请人： Shane Johnson

    发明人： Shane Johnson

    IPC分类号： A01B1/02 ,  B26B23/00 ,  F41A23/04 ,  F41B13/00 ,  F41B13/10 ,  A01B1/00

    CPC分类号： B26B23/00 ,  A01B1/022 ,  F41A23/04 ,  F41B13/00 ,  F41B13/10

    摘要： A tool that can be assembled into multiple configurations for various uses. The tool includes at least two shafts that connect together, as well as multiple, interchangeable accessories that can be coupled to the shafts. Examples of some accessories include a stake, a digging tool, a cutting tool, a swivelling seat, and a swivelling pulley.

    摘要翻译： 可以组合成多种配置的工具，用于各种用途。 该工具包括至少两个连接在一起的轴，以及可以连接到轴的多个可互换的附件。 一些配件的示例包括桩，挖掘工具，切割工具，旋转座和旋转滑轮。